RB225T100 Diodes Schottky barrier diode RB225T100 zExternal dimensions (Unit : mm) zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 13.5MIN 1.2 zConstruction Silicon epitaxial planar 15.0±0.4 0.2 8.0±0.2 12.0±0.2 5.0±0.2 ① 8.0 10.0±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature Manufacture Date Symbol VRM VR Io IFSM Tj Tstg Limits 100 100 30 100 150 -40 to +150 Unit V V A A ℃ ℃ (*1)Tc=100℃max Rating of per diode : Io/2 zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Conditions Symbol VF Min. - Typ. - Max. 0.86 Unit V IF=15A IR - - 400 1.75 µA ℃/W VR=100V junction to case θjc 1/3 RB225T100 Diodes zElectrical characteristic curves Ta=150℃ 10000 条件：f=1MHz f=1MHz 1 Ta=25℃ Ta=75℃ Ta=-25℃ 0.1 0.01 Ta=75℃ 100 10 Ta=25℃ 1 Ta=-25℃ 0.1 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 0.01 100 10 0.001 0.001 1 0.0001 0 0 100 200 300 400 500 600 700 800 900 0 10 20 30 40 50 60 70 80 90 100 760 750 AVE:752.6mV AVE:425.2mV σ:1.6771mV Ta=25℃ VR=100V n=30pcs 900 800 700 600 500 400 300 AVE:478.3nA 200 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 770 REVERSE CURRENT:IR(uA) Ta=25℃ IF=15A n=30pcs Ta=25℃ f=1MHz VR=0V n=10pcs 1900 1800 1700 1600 100 AVE:1914.5pF 0 730 VF DISPERSION MAP 30 2000 1000 780 20 Ｃｔ分布 IR分布 VF分布 740 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) 10000 Ta=125℃ 1000 Ta=150℃ 10 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 100 1500 IR DISPERSION MAP Ct DISPERSION MAP Ifsm-t 1000 1cyc Ifsm Ifsm 250 8.3m 8.3ms 200 150 100 50 AVE:237.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 0 5 10 1 1 100 10 t 100 10 100 50 Mounted on epoxy board IF=10A IM=100mA 45 40 time 10 300us 1ms Rth(j-a) Rth(j-c) 1 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 10 TIME:t(ms) IFSM-t CHARACTERISTICS 8.3ms 8.3ms 1cyc 100 trr DISPERSION MAP 1000 1 Ifsm AVE:24.3pF 0 IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 300 D=1/2 35 Sin(θ＝180) 30 25 20 DC 15 10 5 0.1 0.001 0 0.1 10 TIME:t(ms) Rth-t CHARACTERISTICS 1000 0 5 10 15 20 25 30 35 40 45 50 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 RB225T100 Diodes 0.1 0.06 D=1/2 Sin(θ＝180) 0.04 DC 0.02 Io 0A 0V 60 t 50 D=1/2 40 DC T VR D=t/T VR=50V Tj=150℃ 30 20 10 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS t DC 50 T VR D=t/T VR=50V Tj=150℃ D=1/2 40 30 Sin(θ＝180) 20 10 Sin(θ＝180) 0 0 Io 0A 0V 60 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 REVERSE POWER DISSIPATION:PR (W) 70 70 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 AVE:20.5kV 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1