RB205T-40 Diodes Schottky barrier diode RB205T-40 zExternal dimensions (Unit : mm) zApplications Switching power supply zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 2.8±0.2 0.1 zConstruction Silicon epitaxial planar 15.0±0.4 0.2 8.0±0.2 12.0±0.2 5.0±0.2 ① 8.0 10.0±0.3 0.1 13.5MIN 1.2 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 15 100 150 -40 to +150 Unit V V A A ℃ ℃ (*1)Tc=100℃max Per chip : Io/2 zElectrical characteristic (Ta=25°C) Parameter Forward characteristics Reverse characteristics Thermal impedance Symbol VF IR θjc Min. - Typ. - Max. 0.55 300 2.0 Unit V µA ℃/W Conditions IF=7.5A VR=40V junction to case Rev.B 1/3 RB205T-40 Diodes zElectrical characteristic curves 1000000 Ta=150℃ 100000 Ta=125℃ Ta=125℃ 1 Ta=75℃ Ta=25℃ 0.1 Ta=-25℃ REVERSE CURRENT:IR(uA) Ta=75℃ 1000 100 Ta=25℃ 10 Ta=-25℃ 1 1000 100 200 300 400 500 600 700 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 5 10 15 20 25 30 35 0 40 480 150 100 50 AVE:492.2mV 1630 1620 1610 1600 1590 1580 1570 1560 AVE:35.9uA IR DISPERSION MAP Ct DISPERSION MAP 1000 30 8.3ms 150 100 50 AVE:176.0A RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 200 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:20.6ns 0 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 trr DISPERSION MAP IFSM DISRESION MAP 8.3ms 100 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IM=100mA 10 1ms time Rth(j-a) 300us Rth(j-c) 1 0.1 0.001 100 IF=10A FORWARD POWER DISSIPATION:Pf(W) 1cyc Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 20 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 1 AVE:1619.8pF 1550 VF DISPERSION MAP 300 30 Ta=25℃ f=1MHz VR=0V n=10pcs 1640 0 470 20 1650 Ta=25℃ VR=40V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 490 REVERSE CURRENT:IR(uA) 500 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25℃ IF=7.5A n=30pcs 250 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 520 510 100 1 0.1 0 FORWARD VOLTAGE:VF(mV) f=1MHz 10000 0.01 PEAK SURGE FORWARD CURRENT:IFSM(A) 10000 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 15 D=1/2 10 Sin(θ＝180) DC 5 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 5 10 15 20 25 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) cIo-Pf CHARACTERISTICS Rev.B 30 2/3 RB205T-40 Diodes 40 18 35 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 16 14 12 DC 10 D=1/2 8 6 4 0A 0V DC 30 D=1/2 25 t T VR D=t/T VR=20V Tj=150℃ 20 15 10 Sin(θ＝180) 5 2 Sin(θ＝180) 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 Io 0A 0V 35 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 20 30 Io t D=1/2 DC T 25 VR D=t/T VR=20V Tj=150℃ 20 15 10 Sin(θ＝180) 5 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 AVE:21.6kV 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1