CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050’s high Package Type s: 440193 & 44 0206 PN: CGHV400 50F & CGHV4 0050P efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band UHF, L and S Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and pill package. Typical Performance Over 800 MHz - 2.5 GHz (TC = 25˚C), 50 V Parameter 800 MHz 1.2 GHz 1.4 GHz 1.8 GHz 2.0 GHz Units 17.6 16.9 17.7 17.5 14.8 dB Saturated Output Power 65 70 63 77 60 W Drain Efficiency @ PSAT 63 63 60 53 52 % Input Return Loss 5 5.5 4.2 8 5 dB Small Signal Gain Note: Measured CW in the CGHV40050F-AMPapplication circuit. 15 Rev 1.0 - July 20 Features • Up to 4 GHz Operation • 77 W Typical Output Power • 17.5 dB Small Signal Gain at 1.8 GHz • Application Circuit for 0.8 - 2.0 GHz • 53 % Efficiency at PSAT • 50 V Operation Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 150 Volts Conditions 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 10.4 mA 25˚C Maximum Drain Current IDMAX 6.3 A 25˚C Soldering Temperature2 TS 245 ˚C 1 τ 40 in-oz 3 Thermal Resistance, Junction to Case RθJC 3.04 ˚C/W 85˚C Thermal Resistance, Junction to Case4 RθJC 3.11 ˚C/W 85˚C TC -40, +80 ˚C 30 seconds Screw Torque Case Operating Temperature 5 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGHV40050P at PDISS = 41.6 W. 4 Measured for the CGHV40050F at PDISS = 41.6 W. 5 See also, Power Derating Curve on Page 7. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 10.4 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 0.3 A Saturated Drain Current IDS 7.8 10.4 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 10.4 mA DC Characteristics1 2 RF Characteristics (TC = 25˚C, F0 = 1.8 GHz unless otherwise noted) 3 Small Signal Gain GSS 17.35 17.5 – dB VDD = 50 V, IDQ = 0.3 A Power Gain GP – 12.5 – dB VDD = 50 V, IDQ = 0.3 A, POUT = PSAT PSAT 68 77 – W VDD = 50 V, IDQ = 0.3 A η 49 53 – % VDD = 50 V, IDQ = 0.3 A, POUT = PSAT VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 0.3 A, POUT = 50 W CW Input Capacitance CGS – 16 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 5 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Power Output at Saturation4 Drain Efficiency Output Mismatch Stress Dynamic Characteristics5 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV40050-AMP 4 PSAT is defined as IG= 1 mA. 5 Includes package Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV40050 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40050 Typical Performance Figure 1. - Small Signal Gain and Return Losses versus Frequency of the CGHV40050 in the application circuit CGHV40050-AMP VDD = 50 V, IDQ = 300 mA, Tcase = 25°C 24 20 Gain, Return Loss (dB) 16 12 8 4 0 -4 S11 -8 S21 -12 -16 S22 0 0.5 1 1.5 2 2.5 Frequency (GHz) Figure 2. - Gain, Output Power and Drain Efficiency vs Frequency of the CGHV40050 measured in Broadband Amplifier Circuit CGHV40050-AMP VDD = 50 V, IDQ = 300 mA, Tcase = 25°C 70 42 36 50 30 Output Power 40 Pout 24 Drain Efficiency Gain 30 20 18 12 Gain 10 0 6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Frequency (GHz) 1.6 1.7 1.8 1.9 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 Gain (dB) Pout (dBm), Drain Efficiency (%) Drain Efficiency 60 CGHV40050 Rev 1.0 2.0 2.1 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40050 Typical Performance Figure 3. - GMAX and K-Factor vs Frequency VDD = 50V, IDQ = 300 mA, Tcase = 25°C 40 1.25 Gmax K-Factor 1 30 0.75 25 0.5 20 0.25 K-Factor GMAX (dB) 35 15 0 0.5 1 1.5 2 2.5 3 3.5 4 0 Frequency (GHz) Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 5.69+j7.82 21.47+j10.28 1000 3.21+j3.48 11.72+j10.50 2000 3.2-j1.74 3.84+j7.07 3000 3.23-j5.23 5.58+j3.02 4000 2.75-j10.6 4.65-j0.74 Note1: VDD = 50 V, IDQ = 300 mA. In the 440193 package. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV40050 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40050-AMP Application Circuit Schematic CGHV40050-AMP Application Circuit J3 C13 C10 C9 C8 J1 C1 C2 C14 R3 C12 C11 R4 C3 R2 R1 C4 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV40050 Rev 1.0 C5 J2 C7 C6 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40050-AMP Application Circuit Bill of Materials Designator Description Qty R1 RES, 560Ohms, 0805, HIGH POWER SMT 1 R2 RES, 3.6Ohms, 1005, HIGH POWER SMT 1 R3 RES, SMT, 0805, 22 OHM 1 RES, SMT, 0805, 1OHM 1 C1, C7 R4 CAP, 56 PF +/- 5%,, 250V, 0805, ATC 600F 3 C2 CAP, 24 pF +/- 5%, 250V, 0805, ATC 600F 1 C3, C4 CAP, 1.1pF, +/-0.1pF, 250V, 0805, ATC600F 2 C5, C6 CAP, 0.1 PF +/- 0.05 pF, 0805, ATC 600F 2 C8, C11 CAP, 240pF, +/-5%, 0805, ATC600F 2 C9, C12 CAP, 33000pF, 0805, 100V, X7R 2 C10 CAP, 10UF, 16V, TANTALUM 1 C13 CAP, 100UF, 80V, ELECTROLYTIC, CAN 1 C14 CAP, 1UF, 0805, 100V, X7S 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 J1,J2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 BASEPLATE, CGH35120 1 PCB, RO4350B, 2.5”x4”x0.020”, CGHV40050F 1 CGHV40050-AMP Demonstration Amplifier Circuit Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV40050 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40050 Power Dissipation De-rating Curve Figure 4. - Transient Power Dissipation De-Rating Curve 45 Flange (CW) 40 Pill (CW) Power Dissipation (W) 35 30 25 Note 1 20 15 10 5 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV40050 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Typical S-Parameters (Small Signal, VDS = 50 V, IDQ = 300 mA, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.92 -161.97 13.79 79.27 0.01 -5.56 0.44 -142.42 600 MHz 0.92 -165.42 11.38 74.02 0.01 -9.73 0.46 -143.34 700 MHz 0.92 -168.02 9.62 69.31 0.01 -13.32 0.49 -144.16 800 MHz 0.93 -170.08 8.29 64.99 0.01 -16.49 0.52 -145.04 900 MHz 0.93 -171.8 7.24 60.98 0.009 -19.32 0.55 -146.01 1.0 GHz 0.93 -173.27 6.4 57.23 0.009 -21.83 0.58 -147.07 1.1 GHz 0.93 -174.58 5.7 53.71 0.009 -24.07 0.61 -148.21 1.2 GHz 0.94 -175.77 5.13 50.38 0.008 -26.05 0.63 -149.4 1.3 GHz 0.94 -176.86 4.64 47.24 0.008 -27.77 0.65 -150.62 1.4 GHz 0.94 -177.89 4.23 44.25 0.007 -29.25 0.67 -151.85 1.5 GHz 0.94 -178.87 3.87 41.42 0.007 -30.48 0.69 -153.09 1.6 GHz 0.94 -179.81 3.56 38.72 0.007 -31.46 0.71 -154.33 1.7 GHz 0.95 179.28 3.3 36.14 0.006 -32.19 0.73 -155.54 1.8 GHz 0.95 178.4 3.06 33.68 0.006 -32.66 0.74 -156.74 1.9 GHz 0.95 177.53 2.85 31.32 0.006 -32.85 0.76 -157.91 2.0 GHz 0.95 176.67 2.67 29.06 0.005 -32.75 0.77 -159.06 2.1 GHz 0.95 175.82 2.51 26.88 0.005 -32.33 0.78 -160.18 2.2 GHz 0.95 174.97 2.37 24.78 0.005 -31.57 0.79 -161.28 2.3 GHz 0.95 174.13 2.24 22.75 0.005 -30.43 0.8 -162.34 2.4 GHz 0.96 173.28 2.12 20.78 0.004 -28.87 0.81 -163.39 2.5 GHz 0.96 172.43 2.02 18.87 0.004 -26.86 0.82 -164.4 2.6 GHz 0.96 171.57 1.93 17.02 0.004 -24.35 0.82 -165.4 2.7 GHz 0.96 170.7 1.85 15.2 0.004 -21.31 0.83 -166.37 2.8 GHz 0.96 169.82 1.77 13.43 0.003 -17.72 0.84 -167.32 2.9 GHz 0.96 168.92 1.71 11.69 0.003 -13.6 0.84 -168.25 3.0 GHz 0.96 168.01 1.65 9.98 0.003 -8.98 0.85 -169.17 3.2 GHz 0.96 166.12 1.55 6.62 0.003 1.31 0.86 -170.95 3.4 GHz 0.96 164.13 1.47 3.33 0.003 11.88 0.86 -172.69 3.6 GHz 0.96 162 1.41 0.06 0.004 21.35 0.87 -174.4 3.8 GHz 0.95 159.72 1.36 -3.22 0.004 28.89 0.87 -176.09 4.0 GHz 0.95 157.25 1.33 -6.55 0.005 34.35 0.88 -177.76 To download the s-parameters in s2p format, go to the CGHV40050 Product Page and click on the documentation tab. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV40050 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV40050F (Package Type — 440193) Product Dimensions CGHV40050P (Package Type — 440206) Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV40050 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV40050F GaN HEMT Each CGHV40050P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV40050-TB CGHV40050-AMP Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV40050 Rev 1.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Sales & Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV40050 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf