CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low Package Type : 3x4 DFN PN: CGHV1F 025S as 20V VDD, maintaining high gain and efficiency. Typical Performance 8.9 - 9.6 GHz Parameter (TC = 25˚C) , 40 V 8.9 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units 24 29 27 25 W Drain Efficiency @ PIN = 37 dBm 43.5 48.5 48 46 % Gain @ PIN = 0 dBm 10.7 11.6 11.3 11.1 dB Output Power @ PIN = 37 dBm Note: Measured in the CGHV1F025S-TB1 application circuit. Pulsed 100 µs 10% duty. Preliminary ch 2015 Rev 0.2 – Mar Features • Up to 15 GHz Operation • 25 W Typical Output Power • 11 dB Gain at 9.4 GHz • Application circuit for 8.9 - 9.6 GHz Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage VDSS 100 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 4.8 mA 25˚C Maximum Drain Current1 IDMAX 2 A 25˚C TS 245 ˚C TC -40, +150 ˚C RθJC 3.4 ˚C/W Soldering Temperature2 Case Operating Temperature3,4 Thermal Resistance, Junction to Case5 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 Simulated at PDISS = 2.4 W 4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. 5 Pulsed (100 µs, 10% Duty). Rth for Cree’s reference design using a 10 mil Rogers 5880 PCB with 31 (Ø13 mil) Vias would be 3.6 °C/W. For CW operation, the Rth numbers increase to 5°C/W for just the device, and 7.3 °C/W including the board. Electrical Characteristics (TC = 25˚C) - 40 V Typical Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 4.8 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 40 V, ID = 240 mA IDS 3.8 -4.3 – A VDS = 6.0 V, VGS = 2.0 V V(BR)DSS 100 – – VDC VGS = -8 V, ID = 4.8 mA DC Characteristics1 Saturated Drain Current2 Drain-Source Breakdown Voltage RF Characteristics (TC = 25˚C, F0 = 6.0 GHz unless otherwise noted) 3 Gain G – 16 - dB VDD = 40 V, IDQ = 150 mA, PIN = 0 dBm POUT – 29 – W VDD = 40 V, IDQ = 150 mA, PIN = 34 dBm η – 55 - % VDD = 40 V, IDQ = 150 mA, PIN = 34 dBm VSWR - 10 : 1 - Y No damage at all phase angles, VDD = 40 V, IDQ = 150 mA, POUT = 29 W Input Capacitance5 CGS – 5.9 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Output Capacitance5 CDS – 2 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.21 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Output Power4 Drain Efficiency4 Output Mismatch Stress4 Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV1F025S-TB 4 Pulsed 100 µs, 10% duty cycle 5 Includes package Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV1F025S Rev 0.2 - Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics When Tested in CGHV1F025S-TB1 Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics1 (TC = 25˚C, F0 = 8.9 - 9.6 GHz unless otherwise noted) Gain Output Power2 Drain Efficiency2 Output Mismatch Stress2 G – 11.6 - dB VDD = 40 V, IDQ = 150 mA, PIN = 0 dBm POUT – 29 – W VDD = 40 V, IDQ = 150 mA, PIN = 37 dBm η – 48.5 - % VDD = 40 V, IDQ = 150 mA, PIN = 37 dBm VSWR – 10 : 1 – Y VDS = 40 V, Vgs = -8 V, POUT = 25 W Notes: 1 Measured in CGHV1F025S-TB1 Application Circuit 2 Pulsed 100 µs, 10% duty cycle Typical Performance - CGHV1F025S-TB1 Figure 1. - Typical Small Signal Response of CGHV1F025S-TB1 Application Circuit Small Signal S-parameters VVdd = 40 V, I = 150 mA = 40 V, Idq DD DQ= 150 mA, Tcase = 25°C 16 14 12 10 Gain, Return Loss (dB) 8 6 4 2 0 -2 -4 -6 -8 -10 -12 S21 -14 S11 -16 S22 -18 -20 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 Frequency (GHz) Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV1F025S Rev 0.2 - Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV1F025S-TB1 Figure 2.CGHV1F025S - Typical (25 Large Response W, DCSignal - 18.0 GHz) Gain Efficiency Frequency VDDOutput = 40Power, V, IDQ = and 150 mA, Pvs = 37 dBm IN V, IDQ = 150 = 37Duty dBm Cycle = 10 % VDD = 40 Width Tcase = 25°C, Pulse = mA, 100PINμs, TCASE = 25°C, Pulse Width = 100 μs, Duty Cycle = 10 % 48 20 18 Efficiency Drain Efficiency 46 16 44 14 Output Power 42 40 12 10 Gain 38 8 Power Gain 36 6 Drain Efficiency 34 Offset 32 30 Gain (dB) Output Power (dBm), Drain Efficiency (%) 50 4 Output Power 2 Power Gain 8.8 8.9 9.0 9.1 9.2 9.3 Frequency (GHz) 9.4 9.5 9.6 9.7 0 Figure 3. -Maximum GMAX and K-Factor vs Frequency Avaliable Gain & K-Factor VDD = 40 V, IDQ = CGHV1F025S 150 mA, Tcase = 25°C Vdd = 40 V, Idq = 150 mA, Tcase = 25°C 40 3.5 Gmax Gmax (dB) 35 3 K-Factor 30 2.5 25 2 20 1.5 15 1 10 0.5 5 0 2 4 6 8 10 12 14 16 K-Factor 0 Frequency (GHz) Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV1F025S Rev 0.2 - Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV1F025S-TB1 Application Circuit Bill of Materials CGHV1F025S-TB1 Application Circuit Designator Description Qty R1 RES, 100, OHM, +1/-1%, 1/16 W, 0603 1 R2 RES, 10, OHM, +1/-1%, 1/16 W, 0603 1 CAP, 1pF, ±0.1 pF, 0603, ATC 2 C1, C2 C3, C4 CAP, 1.8pF, ±0.1 pF, 0603, ATC 2 C9, C10 CAP, 0.6pF, ±0.1 pF, 0603, ATC 2 C5, C11 CAP, 10 pF, ±5%, 0603, ATC 1 C6, C12 CAP, 470 pF, 5%, 100 V, 0603, X 2 C7, C13 CAP, 33000 pF, 0805, 100V, X7R 2 CAP, 1.0 UF, 100V, 10%, X7R, 1210 1 CAP, 10 UF, 16V TANTALUM 1 CAP, 33UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 HEADER RT>PLZ .1CEN LK 5POS 1 C14 C8 C15 J1, J2 J3 Q1 QFN TRANSISTOR CGHV1F025S 1 W1 CABLE, 18 AWG, 4.2 1 Rogers 5880 PCB 10 mils 1 Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV1F025S Rev 0.2 - Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV1F025S-TB1 Application Circuit Schematic CGHV1F025S-TB1 Application Circuit Outline Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV1F025S Rev 0.2 - Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV1F025S (Package 3 x 4 DFN) Pin Input/Output 1 GND 2 RF IN 3 RF IN 4 RF IN 5 RF IN 6 GND 7 GND 8 RF OUT 9 RF OUT 10 RF OUT 11 RF OUT 12 GND Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV1F025S Rev 0.2 - Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV1F025S Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 15.0 GHz 25 W Surface Mount - Table 1. Note : Alpha characters used in frequency 1 code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV1F025S Rev 0.2 - Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.313.5639 Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV1F025S Rev 0.2 - Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf