Cree CGHV1F025S 25-W, DC - 15-GHz, 40-V, GaN HEMT

CGHV1F025S
25 W, DC - 15 GHz, 40V, GaN HEMT
Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifically for high efficiency, high gain
and wide bandwidth capabilities. The device can be deployed for L, S, C, X and
Ku-Band amplifier applications. The datasheet specifications are based on a
X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail
circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN)
package. Under reduced power, the transistor can operate below 40V to as low
Package Type
: 3x4 DFN
PN: CGHV1F
025S
as 20V VDD, maintaining high gain and efficiency.
Typical Performance 8.9 - 9.6 GHz
Parameter
(TC = 25˚C)
, 40 V
8.9 GHz
9.2 GHz
9.4 GHz
9.6 GHz
Units
24
29
27
25
W
Drain Efficiency @ PIN = 37 dBm
43.5
48.5
48
46
%
Gain @ PIN = 0 dBm
10.7
11.6
11.3
11.1
dB
Output Power @ PIN = 37 dBm
Note:
Measured in the CGHV1F025S-TB1 application circuit. Pulsed 100 µs 10% duty.
Preliminary
ch 2015
Rev 0.2 – Mar
Features
•
Up to 15 GHz Operation
•
25 W Typical Output Power
•
11 dB Gain at 9.4 GHz
•
Application circuit for 8.9 - 9.6 GHz
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Notes
Drain-Source Voltage
VDSS
100
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
4.8
mA
25˚C
Maximum Drain Current1
IDMAX
2
A
25˚C
TS
245
˚C
TC
-40, +150
˚C
RθJC
3.4
˚C/W
Soldering Temperature2
Case Operating Temperature3,4
Thermal Resistance, Junction to Case5
85˚C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/rf/document-library
3
Simulated at PDISS = 2.4 W
4
TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add
additional thermal resistance.
5
Pulsed (100 µs, 10% Duty). Rth for Cree’s reference design using a 10 mil Rogers 5880 PCB with 31 (Ø13 mil) Vias would be 3.6 °C/W.
For CW operation, the Rth numbers increase to 5°C/W for just the device, and 7.3 °C/W including the board.
Electrical Characteristics (TC = 25˚C) - 40 V Typical
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 4.8 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 40 V, ID = 240 mA
IDS
3.8
-4.3
–
A
VDS = 6.0 V, VGS = 2.0 V
V(BR)DSS
100
–
–
VDC
VGS = -8 V, ID = 4.8 mA
DC Characteristics1
Saturated Drain Current2
Drain-Source Breakdown Voltage
RF Characteristics (TC = 25˚C, F0 = 6.0 GHz unless otherwise noted)
3
Gain
G
–
16
-
dB
VDD = 40 V, IDQ = 150 mA, PIN = 0 dBm
POUT
–
29
–
W
VDD = 40 V, IDQ = 150 mA, PIN = 34 dBm
η
–
55
-
%
VDD = 40 V, IDQ = 150 mA, PIN = 34 dBm
VSWR
-
10 : 1
-
Y
No damage at all phase angles,
VDD = 40 V, IDQ = 150 mA, POUT = 29 W
Input Capacitance5
CGS
–
5.9
–
pF
VDS = 40 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5
CDS
–
2
–
pF
VDS = 40 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.21
–
pF
VDS = 40 V, Vgs = -8 V, f = 1 MHz
Output Power4
Drain Efficiency4
Output Mismatch Stress4
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging
2
Scaled from PCM data
3
Measured in CGHV1F025S-TB
4
Pulsed 100 µs, 10% duty cycle
5
Includes package
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
2
CGHV1F025S Rev 0.2 - Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Electrical Characteristics When Tested in CGHV1F025S-TB1
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics1 (TC = 25˚C, F0 = 8.9 - 9.6 GHz unless otherwise noted)
Gain
Output Power2
Drain Efficiency2
Output Mismatch Stress2
G
–
11.6
-
dB
VDD = 40 V, IDQ = 150 mA, PIN = 0 dBm
POUT
–
29
–
W
VDD = 40 V, IDQ = 150 mA, PIN = 37 dBm
η
–
48.5
-
%
VDD = 40 V, IDQ = 150 mA, PIN = 37 dBm
VSWR
–
10 : 1
–
Y
VDS = 40 V, Vgs = -8 V, POUT = 25 W
Notes:
1
Measured in CGHV1F025S-TB1 Application Circuit
2
Pulsed 100 µs, 10% duty cycle
Typical Performance - CGHV1F025S-TB1
Figure 1. - Typical Small Signal Response
of CGHV1F025S-TB1
Application Circuit
Small Signal
S-parameters
VVdd
=
40
V,
I
=
150
mA
= 40 V, Idq
DD
DQ= 150 mA, Tcase = 25°C
16
14
12
10
Gain, Return Loss (dB)
8
6
4
2
0
-2
-4
-6
-8
-10
-12
S21
-14
S11
-16
S22
-18
-20
8.2
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8
10.0
10.2
10.4
10.6
Frequency (GHz)
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
3
CGHV1F025S Rev 0.2 - Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance in Application Circuit CGHV1F025S-TB1
Figure 2.CGHV1F025S
- Typical (25
Large
Response
W, DCSignal
- 18.0 GHz)
Gain
Efficiency
Frequency
VDDOutput
= 40Power,
V, IDQ
= and
150
mA, Pvs
=
37 dBm
IN
V, IDQ = 150
= 37Duty
dBm Cycle = 10 %
VDD = 40 Width
Tcase = 25°C, Pulse
= mA,
100PINμs,
TCASE = 25°C, Pulse Width = 100 μs, Duty Cycle = 10 %
48
20
18
Efficiency
Drain Efficiency
46
16
44
14
Output Power
42
40
12
10
Gain
38
8
Power Gain
36
6
Drain Efficiency
34
Offset
32
30
Gain (dB)
Output Power (dBm), Drain Efficiency (%)
50
4
Output Power
2
Power Gain
8.8
8.9
9.0
9.1
9.2
9.3
Frequency (GHz)
9.4
9.5
9.6
9.7
0
Figure 3. -Maximum
GMAX and
K-Factor vs Frequency
Avaliable Gain & K-Factor
VDD = 40 V, IDQ = CGHV1F025S
150 mA, Tcase = 25°C
Vdd = 40 V, Idq = 150 mA, Tcase = 25°C
40
3.5
Gmax
Gmax (dB)
35
3
K-Factor
30
2.5
25
2
20
1.5
15
1
10
0.5
5
0
2
4
6
8
10
12
14
16
K-Factor
0
Frequency (GHz)
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
4
CGHV1F025S Rev 0.2 - Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV1F025S-TB1 Application Circuit
Bill of Materials
CGHV1F025S-TB1 Application Circuit
Designator
Description
Qty
R1
RES, 100, OHM, +1/-1%, 1/16 W, 0603
1
R2
RES, 10, OHM, +1/-1%, 1/16 W, 0603
1
CAP, 1pF, ±0.1 pF, 0603, ATC
2
C1, C2
C3, C4
CAP, 1.8pF, ±0.1 pF, 0603, ATC
2
C9, C10
CAP, 0.6pF, ±0.1 pF, 0603, ATC
2
C5, C11
CAP, 10 pF, ±5%, 0603, ATC
1
C6, C12
CAP, 470 pF, 5%, 100 V, 0603, X
2
C7, C13
CAP, 33000 pF, 0805, 100V, X7R
2
CAP, 1.0 UF, 100V, 10%, X7R, 1210
1
CAP, 10 UF, 16V TANTALUM
1
CAP, 33UF, 20%, G CASE
1
CONN, SMA, PANEL MOUNT JACK, FLANGE
2
HEADER RT>PLZ .1CEN LK 5POS
1
C14
C8
C15
J1, J2
J3
Q1
QFN TRANSISTOR CGHV1F025S
1
W1
CABLE, 18 AWG, 4.2
1
Rogers 5880 PCB 10 mils
1
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
2 (125 V to 250 V)
JEDEC JESD22 C101-C
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
5
CGHV1F025S Rev 0.2 - Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV1F025S-TB1 Application Circuit Schematic
CGHV1F025S-TB1 Application Circuit Outline
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
6
CGHV1F025S Rev 0.2 - Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV1F025S (Package 3 x 4 DFN)
Pin
Input/Output
1
GND
2
RF IN
3
RF IN
4
RF IN
5
RF IN
6
GND
7
GND
8
RF OUT
9
RF OUT
10
RF OUT
11
RF OUT
12
GND
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
7
CGHV1F025S Rev 0.2 - Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV1F025S
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Upper Frequency
1
Power Output
Package
Value
Units
15.0
GHz
25
W
Surface
Mount
-
Table 1.
Note : Alpha characters used in frequency
1
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
8
CGHV1F025S Rev 0.2 - Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.313.5639
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
9
CGHV1F025S Rev 0.2 - Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf