CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz LTE and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/metal flange package. Package Type : 440162 and 440161 PN: CGHV272 00F and CGH V27200P Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Gain @ 46 dBm 15.0 16.0 16.0 dB ACLR @ 46 dBm -36.5 -37.5 -37.0 dBc Drain Efficiency @ 46 dBm 29.0 28.5 29.0 % Note: Measured in the CGHV27200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. Features 2.5 - 2.7 GHz Operation • 16 dB Gain • -37 dBc ACLR at 40 W PAVE • 29 % Efficiency at 40 W PAVE • High Degree of DPD Correction Can be Applied 15 Rev 1.0 – May 20 • Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 32 mA 25˚C Maximum Drain Current1 IDMAX 12 A 25˚C Soldering Temperature2 TS 245 ˚C τ 80 in-oz Thermal Resistance, Junction to Case3 RθJC 1.22 ˚C/W 85˚C, PDISS = 96 W Thermal Resistance, Junction to Case4 RθJC 1.54 ˚C/W 85˚C, PDISS = 96 W TC -40, +150 ˚C Screw Torque Case Operating Temperature 5 Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV27200P 4 Measured for the CGHV27200F 5 See also, the Power Dissipation De-rating Curve on Page 6 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 32 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 1.0 A Saturated Drain Current2 IDS 24 28.8 – A Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 32 mA DC Characteristics1 VDS = 6.0 V, VGS = 2.0 V RF Characteristics (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted) 5 Saturated Output Power3,4 PSAT – 300 – W VDD = 50 V, IDQ = 1.0 A Pulsed Drain Efficiency3 η – 62 – % VDD = 50 V, IDQ = 1.0 A, POUT = PSAT Gain6 G – 15.25 – dB VDD = 50 V, IDQ = 1.0 A, POUT = 46 dBm ACLR – -37 – dBc VDD = 50 V, IDQ = 1.0 A, POUT = 46 dBm η – 30.5 – % VDD = 50 V, IDQ = 1.0 A, POUT = 46 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 1.0 A, POUT = 200 W Pulsed Input Capacitance7 CGS – 97 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance7 CDS – 13.4 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.94 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz WCDMA Linearity6 Drain Efficiency 6 Output Mismatch Stress3 Dynamic Characteristics Notes: Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 100 µS, Duty Cycle = 10% 4 PSAT is defined as IG = 3 mA peak. 5 Measured in CGHV27200-AMP. 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. 7 Includes package and internal matching components. 1 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV27200 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - Small Signal Gain and Return Losses vs Frequency for the CGHV27200 measured CGHV27200F in CGHV27200-AMP Amplifier Circuit Sparameters VDD = Vdd 50 V,= I50 = 1.0 A V, Idq = 1.0 A DQ 25 20 15 Magnitude (dB) 10 5 0 -5 -10 S21 -15 S11 S22 -20 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) 2.8 2.9 Figure 2. - Typical Pulsed Measurements vs Input Power of the CGHV27200 measured in CGHV27200-AMP Amplifier Circuit. CGHV27200 Pulsed Measurements vs Input Power IDQ ==50 1.0 A, Freq 2.6=GHz, Pulse Width µs,Duty Duty Cycle VDS = 50 V,Vdd V, Idq = 1 A, =Freq 2.6 GHz, Pulse Width = = 100 100 us, Cycle = 10=%10 % 350 70 Drain Efficiency 60 Output Power (W) 250 50 Output Power Output Power Gain Drain Eff 200 40 150 30 Gain 100 20 50 10 0 5 10 15 20 25 Input Power (dBm) 30 35 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV27200 Rev 1.0 40 45 Gain (dB) & Drain Efficiency (%) 300 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3. - Typical Linearity vs Output Power for the CGHV27200 measured in CGHV27200-AMP Amplifier Circuit A, Freq Linearity = 2.6 GHz, 1c WCDMA 7.5 dB PAR VDD = 50 V, IDQ = 1.0 CGHV27200 vs Output Power Vdd = 50 V, Idq = 1 A, Freq = 2.6 GHz, 1c WCDMA 7.5 dB PAR 35 10 0 Gain Drain Efficiency 25 -10 ACLR Drain Efficiency Gain 20 15 -20 -30 ACLR 10 -40 5 -50 0 25 30 35 40 45 Average Output Power (dBm) 50 Adjacent Channel Power (dBc) Gain (dB) & Drain Efficiency (%) 30 -60 Figure 4. - Typical Linearity at PAVE = 46 dBm over Frequency of the CGHV27200 measured in CGHV27200-AMP Amplifier Circuit. CGHV27200 Pave = 47 dBm7.5 overdB Frequency VDD = 50 V, IDQ Linearity = 1.0 A,at1c WCDMA PAR Vdd = 50 V, Idq = 1 A, 1c WCDMA 7.5 dB PAR 35 -32 Drain Efficiency -33 25 -34 20 -35 Gain 15 -36 10 Output Power ACP 5 Gain -38 Drain Efficiency 0 2.35 ACP 2.40 2.45 Drain Efficiency 2.50 2.55 Gain 2.60 2.65 Frequency (GHz) 2.70 2.75 2.80 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV27200 Rev 1.0 -37 Adjacent Channel Power (dBc) Gain (dB) & Drain Efficiency (%) 30 -39 2.85 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 5.CGHV27200 - Typical Linearity DPDvs vsOutput OutputPower Power Linearity under under DPD VDD = 50 V,=IDQ = 2.6 GHz, 1c1c WCDMA Vdd 50=V,1.0 IdqA, = 1Freq A, Freq = 2.6 GHz, WCDMA7.5 7.5 dB dB PAR PAR 35 5 Gain - Uncorrected Gain - Corrected -5 Drain Efficiency - Uncorrected Drain Efficiency - Corrected 25 -15 ACP - Uncorrected ACP - Corrected 20 -25 15 -35 10 -45 5 -55 0 36 38 40 42 44 Average Output Power (dBm) 46 48 50 Adjacent Channel Power (dBc) Gain (dB) & Drain Efficiency (%) 30 -65 Figure 6. - Spectral Mask at PAVE = 46 dBm with and without DPD CGHV27200 at Pave = 47 dBm7.5 with and without DPD VDD = 50Spectral V, IDQ =Mask 1.0 A, 1c WCDMA dB PAR Vdd = 50 V, Idq = 1 A, Freq = 2.6 GHz, 1c WCDMA 7.5 dB PAR 0 -10 -20 -30 Uncorrected -40 Corrected -50 -60 -70 -80 2.585 2.590 2.595 2.600 2.605 2.610 2.615 Frequency (GHz) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV27200 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance FigureCGHV27200 7. - Intermodulation Distortion Products vs vs Output Power Intermodulation Distortion Products Output Power VDD = 50 V,=IDQ Spacing = 100 Vdd 50=V,1.0 Idq A, = 1Tone A, Tone Spacing = 100kHz kHz -20 Intermodulation Distortion (dBc) -30 -40 -50 -IMD3 -60 +IMD3 -IMD5 +IMD5 -IMD7 -70 -80 +IMD7 25 30 35 40 45 50 Average Output Power (dBm) Figure 8. - Power Dissipation Derating Curve 100 90 440161 Package 80 440162 Package Power Dissipation (W) 70 60 50 Note 1 40 30 20 10 0 0 25 50 75 100 125 150 Maximum Case Temperature ( C) 175 200 225 250 Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV27200 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2500 11.14 - j14.20 4.66 - j0.69 2550 9.58 - j14.73 4.51 - j0.92 2600 7.99 - j14.81 4.30 - j1.12 2650 6.53 - j14.52 4.02 - j1.27 2700 5.28 - j13.97 3.70 - j1.36 Note1: VDD = 50 V, IDQ = 1.0 A. In the 440162 package. Note2: Impedances are extracted from CGHV27200-AMP demonstration circuit and are not source and load pull data derived from transistor. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV27200 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27200-AMP Demonstration Amplifier Circuit Schematic CGHV27200-AMP Demonstration Amplifier Circuit Outline Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV27200 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27200-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16 W, 0603, 1%, 150 OHMS R2 RES, 1/16 W, 0603, 1%, 5.1 OHMS 1 C1 CAP, 6.2 pF, +/-0.25 pF, 0603, ATC600S 1 CAP, 27 pF, +/-5%, 0603, ATC600S 1 C2 C3,C9,C15 C4,C10 C5,C11 C6,C12,C16 C7 C8 1 CAP, 8.2 pF, +/-0.25 pF, 0603, ATC600S 3 CAP, 82.0 pF, +/-5%, 0603, ATC600S 2 CAP, 470 pF, 5%, 100 V, 0603, X7R 2 CAP, 33000 pF, 0805, 100 V, X7R 3 CAP, 10 UF, 16V, TANTALUM 1 CAP, 27 pF, +/-5%, 250 V, 0603, ATC600S 1 CAP, 1.0 UF, 100 V, 10%, X7R, 1210 2 C14 CAP, 100 UF, +/-20%, 160V, ELECTROLYTIC 2 C18 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 1 PCB, RO4350, 0.020” THK, CGHV27200 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CGHV27200 1 C13,C17 J1,J2 J3 CGHV27200-AMP Demonstration Amplifier Circuit Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV27200 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV27200F (Package Type — 440162) Product Dimensions CGHV27200P (Package Type — 440161) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV27200 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure Image CGHV27200F GaN HEMT Each 2.709 in CGHV27200P GaN HEMT Each 4.584 in Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV27200-TB CGHV27200-AMP Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV27200 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGHV27200 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf