CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX and linear amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well. Package Type : 440196 & 44 0166 PN: CGH5501 5P1 & CGH55 015F1 Typical Performance 5.5-5.8GHz (TC = 25˚C) Parameter 5.50 GHz 5.65 GHz 5.80 GHz Units Small Signal Gain 10.7 11.0 10.7 dB EVM at PAVE = 23 dBm 1.9 1.8 2.0 % EVM at PAVE = 33 dBm 1.5 1.5 1.7 % Drain Efficiency at PAVE = 33 dBm 25 25 25 % 11.5 14.5 10.5 dB Input Return Loss Note: Measured in the CGH55015-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Features 5.5 - 5.8 GHz Operation • 15 W Peak Power Capability • >10.5 dB Small Signal Gain • 2 W PAVE < 2.0 % EVM • 25 % Efficiency at 2 W Average Power • Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications • Designed for Multi-carrier DOCSIS Applications 15 Rev 4.0 – May 20 • Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 7 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 4.0 mA 25˚C Maximum Drain Current1 IDMAX 1.5 A 25˚C Soldering Temperature2 TS 245 ˚C Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature 3 τ 60 in-oz RθJC 8.0 ˚C/W TC -40, +150 ˚C 85˚C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH55015 at PDISS = 7W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 3.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 115 mA Saturated Drain Current IDS 2.9 3.5 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 3.6 mA DC Characteristics1 RF Characteristics 2,3 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted) Small Signal Gain Drain Efficiency 4 Error Vector Magnitude GSS 8.5 11.0 – dB VDD = 28 V, IDQ = 115 mA η 20.6 25 – % VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W EVM – 2.0 2.5 % VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W Input Capacitance CGS – 4.5 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 1.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.2 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH55015-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 4 Drain Efficiency = POUT / PDC. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance 14 2 13 1 12 0 11 -1 10 -2 9 -3 8 -4 7 -5 6 -6 5 S21 4 S11 (dB) S21 (dB) Small Signal S-Parameters vs Frequency measured in the CGH55015-AMP Gain and Input Retrun Loss vs Frequency of V = 28 Vdd=28 V, IDQ =V,Idq=115 115 mAmA CGH55015F DD -7 S11 -8 3 -9 2 -10 1 -11 0 -12 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1 Frequency (GHz) 30% 2.4 27% 1.8 24% EVM (%) 3.0 EVM 1.2 Drain Efficiency 0.6 0.0 5.45 21% Drain Efficiency EVM and Efficiency vs. Frequency measured in the CGH55015-AMP EVM & Efficiency of CGH55015 vs. Freqeuncy VDD =Vdd=28V,Idq=115 28 V, IDQ = 115mA,Pout=33 mA, POUT dBm = 2.5 W 18% 5.50 5.55 5.60 5.65 5.70 5.75 5.80 15% 5.85 Frequency (GHz) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance Drain Efficiency and Gain vs Power Output measured in the CGH55015-AMP Gain, EVM and Drain Efficiency vs Output Power VDD = 28 V, IDQ = 115 Vdd mA,=802.16-2004 OFDM, PAR = 9.8 dB 28 V, Idq=115 mA 14 35 5.65 GHz (Gain) 5.80 GHz (Gain) 5.50 GHz (Efficiency) 5.65 GHz (Efficiency) 5.80 GHz (Efficiency) 30 10 25 8 20 6 15 4 10 2 5 0 Drain Efficiency (%) Gain (dB) 12 5.50 GHz (Gain) 0 15 20 25 30 35 Power Output (dBm) Typical EVM and Drain Efficiency vsvsOutput measured in the CGH55015-AMP at Typical EVM OutputPower Power of CGH55015F GHz, 5.65GHz, 5.80GHz OFDM, PAR=9.8 dB 5.50 GHz, 5.65 GHz,5.50 5.80 GHz, 802.16-2004 14.0 35 5.50 GHz (EVM) 5.65 GHz (EVM) 5.80 GHz (EVM) 5.50 GHz (Efficiency) 5.65 GHz (Efficiency) 5.80 GHz (Efficiency) 30 10.0 25 8.0 20 6.0 15 4.0 10 2.0 5 0.0 Drain Efficiency (%) EVM (%) 12.0 0 15 20 25 30 35 Power Output (dBm) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical DOCSIS Performance DOCSIS Modulation Error Ratio vs Output Power of CGH55015 40 5.50 GHz 39 5.65 GHz Modulation Error Ratio (dB) 5.80 GHz 38 37 36 35 34 33 15 20 25 30 35 40 Power Output (dBm) Note: MER is the metric of choice for cable systems and can be related to EVM by the following equation: EVM(%) = 100 x 10 ^ -((MERdB + MTAdB)/20). MTA is the “maximum-to-average constellation power ratio” which varies with the modulation type: MTA = 0 for BPSK and QPSK; 2.55 for 16QAM and 8QAM-DS; 3.68 for 64QAM and 32QAM-DS; 4.23 for 256QAM and 128QAM-DS DOCSIS EVM vs Output Power of CGH55015 in Broadband Amplifier Circuit 1.6 1.4 1.2 EVM (%) 1.0 0.8 5.50 GHz 5.65 GHz 0.6 5.80 GHz 0.4 0.2 0.0 15 20 25 30 35 40 Power Output (dBm) Note: Under DOCSIS, 6.0 MHz Channel BW, 64 QAM, PN23, Filter Alpha 0.18, PAR = 6.7dB. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH55015F1/P1 VDD = 28 V, IDQ = 115 mA Typical Noise Performance Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH55015F1_P1 Rev 4.0 Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F1/P1 VDD = 28 V, IDQ = 115 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 5500 8.7 – j30.2 21.6 – j4.7 5650 10.2 – j26.9 24.2 - j5.5 5800 12.3 – j24.3 26.5 - j7.5 Note 1. VDD = 28V, IDQ = 115 mA in the 440166 package. Note 2. Impedances are extracted from the CGH55015-AMP demonstration amplifier and are not source and load pull data derived from the transistor. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH55015-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1 CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 0.3pF, +/-0.05 pF, 0402, ATC 600L 1 CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S 1 C4,C11 C9 CAP, 18pF, +/-5%, 0603, ATC 600S 2 C5,C12 CAP, 39pF +/-5%, 0603, ATC 600S 2 C6,C13 CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 2 C7,C14 CAP, CER, 0.1UF, 50V, +/-10%, X7R, 0805 2 C8 CAP, 10UF, 16V, SMT, TANTALUM 1 C15 CAP, 1.0UF ±10%, 100V, 1210, X7R 1 C16 CAP, 33UF, 100V, ELECT, FK, SMD 1 R1 RES, 1/16W, 0603, 1%, 562 OHMS 1 R2 RES, 1/16W, 0603, 1%, 22 OHMS 1 J1 HEADER RT> PLZ .1 CEN LK 5 POS 1 CONN, SMA, FLANGE 2 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH55015 1 J3,J4 CGH55015-AMP Demonstration Amplifier Circuit Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH55015-AMP Demonstration Amplifier Circuit Schematic CGH55015-AMP Demonstration Amplifier Circuit Outline Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH55015 (Small Signal, VDS = 28 V, IDQ = 115 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.909 -125.16 17.56 107.52 0.026 20.86 0.330 -95.81 600 MHz 0.903 -134.72 15.15 101.24 0.027 15.25 0.318 -103.71 700 MHz 0.898 -142.24 13.28 95.96 0.027 10.66 0.312 -109.87 800 MHz 0.895 -148.34 11.79 91.38 0.027 6.76 0.309 -114.77 900 MHz 0.893 -153.43 10.58 87.30 0.028 3.37 0.310 -118.75 1.0 GHz 0.891 -157.78 9.59 83.58 0.028 0.34 0.312 -122.07 1.2 GHz 0.889 -164.93 8.06 76.89 0.028 -4.92 0.320 -127.35 1.4 GHz 0.888 -170.72 6.94 70.90 0.027 -9.46 0.332 -131.53 1.6 GHz 0.888 -175.64 6.08 65.34 0.027 -13.51 0.347 -135.09 1.8 GHz 0.888 -179.99 5.41 60.10 0.027 -17.20 0.362 -138.30 2.0 GHz 0.889 176.04 4.86 55.09 0.026 -20.60 0.378 -141.33 2.2 GHz 0.889 172.35 4.42 50.24 0.025 -23.76 0.394 -144.27 2.4 GHz 0.890 168.84 4.05 45.53 0.025 -26.70 0.410 -147.16 2.6 GHz 0.891 165.46 3.73 40.93 0.024 -29.44 0.426 -150.04 2.8 GHz 0.891 162.16 3.46 36.41 0.024 -31.97 0.441 -152.92 3.0 GHz 0.892 158.90 3.23 31.95 0.023 -34.32 0.455 -155.81 3.2 GHz 0.893 155.67 3.03 27.55 0.022 -36.45 0.469 -158.73 3.4 GHz 0.893 152.43 2.85 23.19 0.021 -38.38 0.482 -161.68 3.6 GHz 0.894 149.18 2.70 18.85 0.021 -40.07 0.494 -164.66 3.8 GHz 0.894 145.89 2.56 14.53 0.020 -41.52 0.506 -167.68 4.0 GHz 0.894 142.54 2.44 10.22 0.019 -42.71 0.516 -170.74 4.1 GHz 0.895 140.85 2.38 8.07 0.019 -43.19 0.521 -172.29 4.2 GHz 0.895 139.14 2.33 5.91 0.019 -43.59 0.526 -173.85 4.3 GHz 0.895 137.40 2.28 3.75 0.018 -43.92 0.530 -175.43 4.4 GHz 0.895 135.65 2.23 1.58 0.018 -44.16 0.535 -177.02 4.5 GHz 0.895 133.88 2.18 -0.59 0.018 -44.32 0.539 -178.62 4.6 GHz 0.895 132.08 2.14 -2.77 0.017 -44.38 0.543 179.75 4.7 GHz 0.895 130.26 2.10 -4.96 0.017 -44.35 0.546 178.11 4.8 GHz 0.895 128.41 2.06 -7.15 0.017 -44.23 0.550 176.45 4.9 GHz 0.895 126.53 2.03 -9.36 0.017 -44.02 0.553 174.77 5.0 GHz 0.895 124.63 1.99 -11.58 0.016 -43.71 0.556 173.07 5.1 GHz 0.895 122.69 1.96 -13.81 0.016 -43.30 0.559 171.35 5.2 GHz 0.895 120.72 1.93 -16.05 0.016 -42.81 0.561 169.60 5.3 GHz 0.895 118.73 1.90 -18.31 0.016 -42.22 0.564 167.83 5.4 GHz 0.895 116.70 1.87 -20.59 0.016 -41.56 0.566 166.04 5.5 GHz 0.895 114.63 1.84 -22.89 0.016 -40.83 0.568 164.21 5.6 GHz 0.895 112.53 1.81 -25.20 0.016 -40.05 0.570 162.36 5.7 GHz 0.895 110.39 1.79 -27.53 0.016 -39.22 0.572 160.47 5.8 GHz 0.895 108.22 1.77 -29.89 0.016 -38.35 0.574 158.55 5.9 GHz 0.895 106.00 1.74 -32.27 0.016 -37.48 0.575 156.60 6.0 GHz 0.895 103.75 1.72 -34.67 0.016 -36.62 0.576 154.61 To download the s-parameters in s2p format, go to the CGH55015F1/P1 Product Page, click on the documentation tab. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH55015F1 (Package Type — 440166) Product Dimensions CGH55015P1 (Package Type — 440196) Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH55015F1 GaN HEMT Each CGH55015P1 GaN HEMT Each CGH55015-TB Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH55015-AMP Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH55015F1_P1 Rev 4.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH55015F1_P1 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf