CGH09120F, 120W, 20W AVERAGE POWER, 800

CGH09120F
120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM
Cree’s CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities, which
makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The
transistor is supplied in a ceramic/metal flange package.
Package Type
: 440095
PN: CGH0912
0F
Typical Performance Over 800-950 MHz (TC = 25˚C) of Demonstration Amplifier
Parameter
800 MHz
850 MHz
900 MHz
950 MHz
Units
Gain @ 43 dBm
19.2
21.0
21.6
21.6
dB
ACLR @ 43 dBm
-40.5
-40.5
-39.0
-36.5
dBc
Drain Efficiency @ 43 dBm
31.0
33.7
36.6
39.3
%
Note:
Measured in the CGH09120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
UHF - 2.5 GHz Operation
•
21 dB Gain
•
-38 dBc ACLR at 20 W PAVE
•
35 % Efficiency at 20 W PAVE
•
High Degree of DPD Correction Can be Applied
2015
Rev 2.1 – June
•
Subject to change without notice.
www.cree.com/RF
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Symbol
Rating
Units
Conditions
VDSS
84
Volts
25˚C
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
Power Dissipation
PDISS
56
Watts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
30
mA
25˚C
Maximum Drain Current1
IDMAX
12
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
80
in-oz
RθJC
1.7
˚C/W
TC
-40, +150
˚C
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature3
85˚C
Note:
Current limit for long term, reliable operation.
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH09120F at PDISS = 56 W
1
2
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 28.8 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 1.2 A
Saturated Drain Current2
IDS
23.2
28.0
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 28.8 mA
DC Characteristics
Conditions
1
RF Characteristics5 (TC = 25˚C, F0 = 870 MHz unless otherwise noted)
Saturated Output Power3,4
PSAT
–
120
–
W
VDD = 28 V, IDQ = 1.2 A,
η
–
75
–
%
VDD = 28 V, IDQ = 1.2 A, POUT = PSAT
GSS
20
21.5
–
dB
VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm
ACLR
–
-38
–34
dBc
VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm
η
31
35
–
%
VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 1.2 A,
POUT = 20 W CW
Input Capacitance
CGS
–
35.3
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
9.1
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
1.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Pulsed Drain Efficiency3
Modulated Gain
6
WCDMA Linearity6
Modulated Drain Efficiency
6
Output Mismatch Stress
Dynamic Characteristics
Notes:
Measured on wafer prior to packaging.
Scaled from PCM data.
3
Pulse Width = 40 μS, Duty Cycle = 5 %.
4
PSAT is defined as IG = 10 mA peak.
5
Measured in CGH09120F-AMP
6
Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF.
1
2
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Pulse Performance
Typical Pulsed Output Power, Drain Efficiency, and Gain vs Input Power
measured in CGH09120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1.2 A, Freq = 870 MHz, Pulse Width = 40 μS, Duty Cycle = 5 %
80
25
70
23
Gain
50
21
19
Output
Power
40
17
Drain
Efficiency
30
Gain (dB)
Output Power (dBm)
Drain Efficiency (%)
60
15
20
13
Output Power
10
11
Drain Efficiency
Gain
0
9
0
5
10
15
20
25
30
35
40
Input Power (dBm)
54.0
100
53.6
90
53.2
80
52.8
70
Drain
Efficiency
52.4
60
52.0
Psat
Drain Efficiency
51.6
50
40
Psat
51.2
30
50.8
20
50.4
10
50.0
700
750
800
850
900
950
Drain Efficiency (%)
Saturated Output Power (dBm)
Typical Pulsed Saturated Power vs Frequency
measured in CGH09120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1.2 A, PSAT = 10 mA IGS Peak, Pulse Width = 40 μS, Duty Cycle = 5 %
0
1000
Frequency (MHz)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Linear Performance
Typical Small Signal Gain and Return Loss vs Frequency
measured in CGH09120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1.2 A
25
10
23
5
21
0
19
-5
17
-10
Return
Loss
Gain
15
-15
Return Loss
13
750
800
Return Loss (dB)
Linear Gain (dB)
Gain
850
900
950
-20
1000
Frequency (MHz)
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power
measured in CGH09120F-AMP Amplifier Circuit.
3GPP Test Model 1, 64 DPCH 67 % Clipping, 8.81 dB PAR @ 0.01 %
VDS = 28 V, IDS = 1.2 A, Frequency = 870 MHz
-30
50
-ACLR
-32
45
+ACLR
Drain Efficiency
-34
40
35
ACLR
-38
30
-40
25
-42
20
Drain
Efficiency
-44
Drain Efficiency (%)
ACLR (dBc)
-36
15
-46
10
-48
5
-50
0
25
30
35
40
45
50
Output Power (dBm)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction
ACLR and Drain Efficiency vs Output Power
measured in CGH09120F-AMP Amplifier Circuit.
Two Channel WCDMA 7.5dB PAR with CFR
VDS = 28 V, IDS = 1.2 A, Frequency = 870 MHz
-20
50
-25
Uncorrected -ACLR
Uncorrected +ACLR
Corrected -ACLR
Corrected +ACLR
Uncorrected Drain Eff
Corrected Drain Eff
45
-30
40
35
Uncorrected
ACLR
-40
30
-45
25
Drain
Efficiency
-50
20
Corrected
ACLR
-55
Drain Efficiency (%)
ACLR (dBc)
-35
15
-60
10
-65
5
-70
0
24
29
34
39
44
Output Power (dBm)
WCDMA Linearity with DPD Linearizer
measured in CGH09120F-AMP Amplifier Circuit.
Two Channel WCDMA 7.5dB PAR with CFR
VDS = 28 V, IDS = 1.2 A, POUT = 43 dBm, Efficiency = 35 %
-10
-20
Uncorrected
-30
DPD Corrected
-40
-50
-60
-70
-80
-90
840
850
860
870
880
890
900
Frequency (MHz)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
K Factor
MAG (dB)
Simulated Maximum Available Gain and K Factor of the CGH09120F
VDD = 28 V, IDQ = 1.2 A
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH09120F
VDD = 28 V, IDQ = 1.2 A
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
700
0.75 - j 0.58
5.59 - j 2.12
750
0.84 - j 0.18
4.97 - j 1.25
800
0.90 + j 0.19
4.68 - j 0.37
850
0.95 + j 0.59
4.59 + j 0.45
900
1.02 + j 1.03
4.67 + j 1.19
950
1.17 + j 1.53
4.90 + j 1.82
1000
1.53 + j 2.10
5.28 + j 2.31
Note1 VDD = 28V, IDQ = 1.2 A in the 440095 package.
Note2 Impedances are extracted from CGH09120F-AMP demonstration circuit
and are not source and load pull data derived from transistor.
CGH09120F Power Dissipation CGH09120F
De-ratingAverage
CurvePower Dissipation De-rating Curve
70
60
Power Dissipation (W)
50
40
30
Note 1
20
10
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH09120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, 1%, 511 OHMS
R2
RES, 1/16W, 0603, 1%, 5.1 OHMS
1
CAP, 33 pF +/- 5%, 250V, 0805, ATC 600F
2
C1, C24
1
C2
CAP, 3.0 pF, +/- 0.1pF, 0603, ATC600S
1
C3, C4
CAP, 3.3 pF, +/- 0.1pF, 0603, ATC600S
2
C5, C6
CAP, 2.7 pF, +/- 0.1pF, 0603, ATC600S
2
C7, C8, C9,
C10, C11, C12
CAP, 6.8pF, +/- 0.25 pF, 0603, ATC600S
6
C13, C25
CAP, 56 pF +/- 5%, 0603 , ATC600S
2
C14, C26
CAP, 100 pF, +/-5%, 0603, ATC600S
2
C15, C27
CAP, 470 pF, 5%, 100V, 0603, X7R
2
C16, C28
CAP, 33000 pF, 0805, 100V, X7R
2
CAP, 10 uF, 16V, TANTALUM
1
CAP, 3.9 pF, +/- 0.1pF, 0603, ATC600S
4
C22, C23
CAP, 2.4PF, +/-0.1 pF, 0603, ATC600S
2
C29
CAP, 1.0 uF, +/-10%, 1210, 100V, X7R
1
C30
CAP 100 uF, 160V, ELECTROLYTIC
1
C17
C18, C19, C20, C21
L1
INDUCTOR, CHIP, 10nH, 0603, SMT
1
L2
FERRITE, 22 OHM, 0805, BLM21PG220SN1
1
J1, J2
CONN, N-Type, Female, 0.500 SMA Flange
2
J3
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
1
-
PCB, RO4003, Er = 3.38, h = 32 mil
1
-
CGH09120F
1
CGH09120F-AMP Demonstration Amplifier Circuit
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH09120F-AMP Demonstration Amplifier Circuit Schematic
CGH09120F-AMP Demonstration Amplifier Circuit Outline
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH09120F
(Small Signal, VDS = 28 V, IDQ = 1.2 A, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.962
-177.69
4.16
80.41
0.006
15.01
0.812
-179.78
600 MHz
0.962
-178.94
3.46
77.69
0.006
17.16
0.814
179.92
700 MHz
0.962
-179.97
2.97
75.09
0.006
19.38
0.815
179.65
800 MHz
0.962
179.14
2.59
72.58
0.006
21.64
0.816
179.40
900 MHz
0.962
178.33
2.30
70.14
0.006
23.89
0.818
179.15
1.0 GHz
0.962
177.59
2.07
67.74
0.007
26.12
0.820
178.90
1.1 GHz
0.962
176.88
1.88
65.40
0.007
28.30
0.821
178.64
1.2 GHz
0.962
176.21
1.73
63.09
0.007
30.42
0.823
178.37
1.3 GHz
0.961
175.55
1.59
60.83
0.007
32.47
0.825
178.09
1.4 GHz
0.961
174.91
1.48
58.60
0.008
34.43
0.827
177.80
1.5 GHz
0.961
174.28
1.38
56.40
0.008
36.30
0.829
177.50
1.6 GHz
0.961
173.65
1.29
54.24
0.008
38.06
0.831
177.18
1.7 GHz
0.961
173.02
1.22
52.12
0.008
39.70
0.833
176.84
1.8 GHz
0.960
172.40
1.15
50.02
0.009
41.24
0.835
176.49
1.9 GHz
0.960
171.77
1.09
47.96
0.009
42.65
0.836
176.13
2.0 GHz
0.960
171.14
1.04
45.93
0.010
43.95
0.838
175.75
2.1 GHz
0.959
170.50
1.00
43.92
0.010
45.13
0.840
175.35
2.2 GHz
0.959
169.86
0.95
41.94
0.011
46.19
0.841
174.93
2.3 GHz
0.958
169.20
0.92
39.99
0.011
47.13
0.843
174.50
2.4 GHz
0.958
168.54
0.88
38.07
0.012
47.96
0.844
174.05
2.5 GHz
0.957
167.86
0.85
36.16
0.013
48.68
0.846
173.59
2.6 GHz
0.956
167.17
0.82
34.28
0.013
49.30
0.847
173.11
2.7 GHz
0.956
166.46
0.80
32.42
0.014
49.81
0.848
172.61
2.8 GHz
0.955
165.74
0.78
30.58
0.015
50.22
0.849
172.10
2.9 GHz
0.954
165.00
0.76
28.75
0.015
50.54
0.850
171.56
3.0 GHz
0.953
164.24
0.74
26.94
0.016
50.76
0.850
171.01
3.2 GHz
0.951
162.65
0.71
23.34
0.018
50.94
0.851
169.86
3.4 GHz
0.948
160.96
0.68
19.78
0.021
50.78
0.851
168.62
3.6 GHz
0.945
159.15
0.67
16.22
0.023
50.30
0.850
167.31
3.8 GHz
0.941
157.21
0.65
12.64
0.026
49.50
0.848
165.90
4.0 GHz
0.936
155.11
0.65
9.02
0.029
48.38
0.846
164.39
4.2 GHz
0.931
152.81
0.64
5.33
0.033
46.95
0.842
162.78
4.4 GHz
0.924
150.30
0.65
1.52
0.038
45.18
0.837
161.04
4.6 GHz
0.916
147.52
0.66
-2.44
0.043
43.05
0.831
159.17
4.8 GHz
0.907
144.44
0.67
-6.59
0.049
40.54
0.823
157.14
5.0 GHz
0.896
140.98
0.69
-11.01
0.056
37.59
0.813
154.94
5.2 GHz
0.882
137.08
0.72
-15.75
0.065
34.17
0.801
152.55
5.4 GHz
0.865
132.66
0.75
-20.88
0.075
30.19
0.786
149.94
5.6 GHz
0.844
127.59
0.79
-26.51
0.087
25.59
0.769
147.10
5.8 GHz
0.818
121.74
0.84
-32.73
0.102
20.26
0.749
143.99
6.0 GHz
0.787
114.95
0.90
-39.65
0.119
14.11
0.725
140.60
To download the s-parameters in s2p format, go to the CGH09120F Product Page and click on the documentation tab.
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH09120F (Package Type ­— 440095)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH09120F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH09120F-TB
CGH09120F-AMP
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH09120F Rev 2.1
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
13
CGH09120F Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf