CGH55030F1/P1

CGH55030F1 / CGH55030P1
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX
and BWA amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well.
Package Type
: 440196 & 44
0166
PN: CGH5503
0P1 & CGH55
030F1
Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.50 GHz
5.65 GHz
5.80 GHz
Units
Small Signal Gain
9.5
10.0
9.5
dB
EVM at PAVE = 29 dBm
1.1
0.9
0.9
%
EVM at PAVE = 36 dBm
2.2
1.4
1.4
%
Drain Efficiency at PAVE = 4 W
23
24
25
%
10.8
22
9.3
dB
Input Return Loss
Note:
Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
15
Rev 4.0 – May 20
Features
•
300 MHz Instantaneous Bandwidth
•
30 W Peak Power Capability
•
10 dB Small Signal Gain
•
4 W PAVE < 2.0 % EVM
•
25 % Efficiency at 4 W Average Power
•
Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
•
Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Power Dissipation
PDISS
14
Watts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
7.0
mA
25˚C
Maximum Drain Current
IDMAX
3
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
60
in-oz
RθJC
4.8
˚C/W
85˚C
TC
-40, +150
˚C
30 seconds
1
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature
3
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH55030F1 at PDISS = 14 W
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
–2.3
VDC
VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 250 mA
Saturated Drain Current
IDS
5.8
7.0
–
A
VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 7.2 mA
DC Characteristics
RF Characteristics
Conditions
1
2,3
(TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)
Small Signal Gain
GSS
8.5
10.0
–
dB
VDD = 28 V, IDQ = 250 mA
η
19
24
–
%
VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
Error Vector Magnitude
EVM
–
2.0
2.5
%
VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
Input Capacitance
CGS
–
9.0
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
2.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.4
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency4
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Measured in the CGH55030-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = POUT / PDC.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Small Signal S-Parameters vs Frequency of
CGH55030F1 and CGH55030P1 in the CGH55030-AMP
VDD = 28 V, IDQ = 250 mA
S21
10
S21 (dB)
5
0
S11
8
-5
6
-10
4
-15
2
-20
0
S11 (dB)
12
-25
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
6.1
Frequency (GHz)
Typical EVM and Efficiency versus Frequency of
CGH55030F1 and CGH55030P1 in the CGH55030-AMP
VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB, PAVE = 5 W
3.0
30
30 W Drain Efficiency
2.5
29
2.0
28
1.5
27
1.0
26
0.5
25
0.0
5.45
5.50
5.55
5.60
5.65
5.70
5.75
5.80
Drain Efficiency (%)
EVM (%)
30 W EVM
24
5.85
Frequency (GHz)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Drain Efficiency and Gain vs Output Power of
CGH55030F1 and CGH55030P1 in CGH55030-AMP
VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB
35
12
30
10
25
Gain (dB)
8
20
5.50 GHz (Gain)
5.65 GHz (Gain)
6
15
5.80 GHz (Gain)
5.50 GHz (Efficiency)
4
Drain Efficiency (%)
14
10
5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
2
5
0
0
15
20
25
30
35
40
Output Power (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Typical EVM and Drain Efficiency vs Output Power of
CGH55030F1 and CGH55030P1 in CGH55030-AMP at
5.50GHz, 5.65 GHz, 5.80GHz, 802.16-2004 OFDM, PAR=9.8 dB
14.0
35
5.50 GHz (EVM)
5.65 GHz (EVM)
12.0
30
5.80 GHz (EVM)
5.50 GHz (Efficiency)
25
5.65 GHz (Efficiency)
EVM (%)
5.80 GHz (Efficiency)
8.0
20
6.0
15
4.0
10
2.0
5
0.0
Drain Efficiency (%)
10.0
0
15
20
25
30
35
40
Output Power (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical DOCSIS Performance
Modulation Error Ratio vs Output Power of
EVM vs Power
- DOCSIS Amplifier Circuit
CGH55030F1 andCGH55030
CGH55030P1
inOutput
Broadband
42
Modulation Error Ratio (dB)
40
38
36
34
5.50 GHz
32
5.65 GHz
5.80 GHz
30
15
20
25
30
35
40
Power Output (dBm)
Note:
MER is the metric of choice for cable systems and can be related to EVM by the following
equation: EVM(%) = 100 x 10 ^ -((MERdB + MTAdB)/20). MTA is the “maximum-to-average
constellation power ratio” which varies with the modulation type: MTA = 0 for BPSK and QPSK; 2.55 for 16QAM
and 8QAM-DS; 3.68 for 64QAM and 32QAM-DS; 4.23 for 256QAM and 128QAM-DS
EVM vs Output Power of CGH55030F1 and CGH55030P1 in Broadband Amplifier Circuit
CGH55030 EVM vs Power Output - DOCSIS
1.4
5.50 GHz
5.65 GHz
1.2
5.80 GHz
EVM (%)
1.0
0.8
0.6
0.4
0.2
0.0
15
20
25
30
35
40
Power Output (dBm)
Note:
Under DOCSIS, 6.0 MHz Channel BW, 64 QAM, PN23, Filter Alpha 0.18, PAR = 6.7dB.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
K Factor
MAG (dB)
Simulated Maximum Available Gain and K Factor of the CGH55030F1/P1
VDD = 28 V, IDQ = 250 mA
Typical Noise Performance
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH55030F1_P1 Rev 4.0
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55030F1/P1
VDD = 28 V, IDQ = 250 mA
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
5500
8.0 – j12.4
14.1 – j12.6
5650
8.7 - j13.1
14.7 – j11.7
5800
8.4 - j14.0
15.4 – j11.0
Note 1. VDD = 28V, IDQ = 250 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55030-AMP demonstration amplifier
and are not source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH55030-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, 1%, 562 OHMS
1
R2
RES, 1/16W, 0603, 1%, 22.6 OHMS
1
C2
CAP, 0.3pF, +/-0.05pF, 0402, ATC600L
1
C16
CAP, 33 UF, 20%, G CASE
1
C15
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C8
CAP 10UF 16V TANTALUM
1
C9
CAP, 0.4pF, +/-0.05pF, 0603, ATC600S
1
C1
CAP, 1.2pF, +/-0.1pF, 0603, ATC600S
1
C6,C13
CAP,200 PF,0603 PKG, 100 V
2
C4,C11
CAP, 10.0pF,+/-5%, 0603, ATC600S
2
C5,C12
CAP, 39pF, +/-5%, 0603, ATC600S
2
C7,C14
CAP, 330000PF, 0805, 100V, TEMP STABILIZ
2
J3,J4
CONN, SMA, PANEL MOUNT JACK, FLANGE
2
HEADER RT>PLZ .1CEN LK 5POS
1
-
PCB, RO4350B, Er = 3.48, h = 20 mil
1
-
CGH55030
1
J1
CGH55030-AMP Demonstration Amplifier Circuit
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH55030-AMP Demonstration Amplifier Circuit Schematic
(CGH55030F)
CGH55030-AMP Demonstration Amplifier Circuit Outline
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH55030F1 and CGH55030P1
(Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.917
-157.22
12.62
91.45
0.018
7.56
0.458
-158.97
600 MHz
0.916
-161.92
10.57
87.33
0.018
4.70
0.465
-160.93
700 MHz
0.916
-165.46
9.07
83.78
0.018
2.41
0.472
-162.19
800 MHz
0.916
-168.28
7.94
80.58
0.018
0.51
0.478
-163.04
900 MHz
0.916
-170.61
7.05
77.64
0.017
-1.12
0.485
-163.64
1.0 GHz
0.916
-172.60
6.33
74.88
0.017
-2.55
0.493
-164.09
1.2 GHz
0.917
-175.88
5.24
69.73
0.017
-4.94
0.508
-164.77
1.4 GHz
0.918
-178.57
4.46
64.94
0.017
-6.84
0.525
-165.36
1.6 GHz
0.919
179.09
3.87
60.41
0.016
-8.31
0.542
-165.99
1.8 GHz
0.921
176.98
3.40
56.07
0.016
-9.39
0.559
-166.73
2.0 GHz
0.922
175.03
3.03
51.90
0.015
-10.06
0.577
-167.59
2.2 GHz
0.924
173.17
2.73
47.87
0.014
-10.31
0.594
-168.57
2.4 GHz
0.925
171.39
2.47
43.97
0.014
-10.12
0.610
-169.67
2.6 GHz
0.926
169.65
2.26
40.19
0.013
-9.46
0.626
-170.88
2.8 GHz
0.928
167.93
2.08
36.52
0.013
-8.31
0.642
-172.17
3.0 GHz
0.929
166.24
1.92
32.94
0.013
-6.65
0.656
-173.55
3.2 GHz
0.930
164.54
1.78
29.45
0.012
-4.49
0.670
-175.00
3.4 GHz
0.931
162.85
1.66
26.05
0.012
-1.85
0.683
-176.50
3.6 GHz
0.932
161.14
1.55
22.72
0.012
1.19
0.695
-178.06
3.8 GHz
0.933
159.42
1.46
19.46
0.012
4.55
0.706
-179.66
4.0 GHz
0.933
157.68
1.38
16.27
0.012
8.08
0.716
178.70
4.1 GHz
0.934
156.80
1.34
14.69
0.012
9.87
0.721
177.86
4.2 GHz
0.934
155.91
1.31
13.12
0.012
11.64
0.726
177.02
4.3 GHz
0.934
155.01
1.27
11.57
0.012
13.38
0.730
176.17
4.4 GHz
0.934
154.11
1.24
10.03
0.013
15.08
0.735
175.30
4.5 GHz
0.935
153.20
1.21
8.49
0.013
16.71
0.739
174.44
4.6 GHz
0.935
152.28
1.18
6.97
0.013
18.26
0.743
173.56
4.7 GHz
0.935
151.35
1.16
5.46
0.013
19.72
0.746
172.67
4.8 GHz
0.935
150.41
1.13
3.95
0.014
21.09
0.750
171.78
4.9 GHz
0.935
149.46
1.11
2.46
0.014
22.35
0.753
170.88
5.0 GHz
0.935
148.49
1.08
0.96
0.015
23.50
0.756
169.97
5.1 GHz
0.935
147.52
1.06
-0.52
0.015
24.55
0.760
169.05
5.2 GHz
0.935
146.53
1.04
-2.00
0.016
25.48
0.762
168.12
5.3 GHz
0.935
145.53
1.02
-3.48
0.016
26.30
0.765
167.18
5.4 GHz
0.935
144.52
1.00
-4.96
0.017
27.02
0.768
166.24
5.5 GHz
0.935
143.49
0.99
-6.43
0.018
27.62
0.770
165.28
5.6 GHz
0.935
142.45
0.97
-7.90
0.018
28.12
0.773
164.32
5.7 GHz
0.934
141.39
0.95
-9.37
0.019
28.53
0.775
163.35
5.8 GHz
0.934
140.31
0.94
-10.84
0.020
28.83
0.777
162.36
5.9 GHz
0.934
139.22
0.93
-12.32
0.020
29.05
0.779
161.37
6.0 GHz
0.934
138.12
0.91
-13.79
0.021
29.18
0.781
160.36
To download the s-parameters in s2p format, go to the CGH55030F1/P1 Product Page, click on the documentation tab.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH55030F1 (Package Type —
­ 440166)
Product Dimensions CGH55030P1 (Package Type ­— 440196)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGH55030F1
GaN HEMT
Each
2.709 inv
CGH55030P1
GaN HEMT
Each
4.584 in
CGH55030-TB
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH55030-AMP
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
13
CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf