CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages. FEATURES Package Type : 440196 and 440166 PN: CGH4002 5P and CGH40 025F APPLICATIONS • Up to 6 GHz Operation • 2-Way Private Radio • 15 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 13 dB Small Signal Gain at 4.0 GHz • Cellular Infrastructure • 30 W typical PSAT • Test Instrumentation • 62 % Efficiency at PSAT • Class A, AB, Linear amplifiers suitable for • 28 V Operation 15 Rev 4.0 – May 20 OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts Conditions 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 7.0 mA 25˚C Maximum Drain Current IDMAX 3 A 25˚C Soldering Temperature2 TS 245 ˚C τ 60 in-oz RθJC 4.8 ˚C/W TC -40, +150 ˚C 1 Screw Torque Thermal Resistance, Junction to Case 3 Case Operating Temperature3,4 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www,cree.com/RF/Document-Library 3 Measured for the CGH40025F at PDISS = 28 W. 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 7.2 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 250 mA Saturated Drain Current IDS 5.8 7.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 7.2 mA DC Characteristics Conditions 1 RF Characteristics2 (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted) Small Signal Gain GSS 12 13 – dB VDD = 28 V, IDQ = 250 mA Power Output3 PSAT 20 30 – W VDD = 28 V, IDQ = 250 mA η 55 62 – % VDD = 28 V, IDQ = 250 mA, PSAT VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 250 mA, POUT = 25 W CW Input Capacitance CGS – 9.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 2.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.4 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40025-AMP. 3 PSAT is defined as IG = 0.72 mA. 4 Drain Efficiency = POUT / PDC Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Small Signal Gain and Return Loss vs Frequency Signal Gain in and Input Return Loss ofSmall the CGH40025F the CGH40025-AMP 20 15 10 Amplitude (dB) 5 0 -5 -10 -15 Small Signal Gain Input Return Loss -20 -25 2.50 3.00 3.50 4.00 4.50 Frequency (GHz) 40 PSAT, Gain, and Drain Efficiency vs Frequency of the Psat, CGH40025F Gain, and Drain vs Frequency of the in Efficiency the CGH40025-AMP CGH40025F in the CGH40025-TB VVDD = 28 V, I IDQ = 250 mA DD = 28 V, DQ = 250 mA 80 70 30 60 PSAT 25 50 20 40 15 30 Gain 10 Drain Efficiency (%) PSAT (W), Gain (dB) Efficiency 35 20 Psat Gain 5 10 Drain Eff 0 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 0 3.80 Frequency (GHz) Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Swept CW Data of CGH40025 vs. Output Power with Source 15 70 14 60 13 50 12 40 Gain (dB) 11 30 Drain Eff. (%) 10 20 9 10 8 Drain Efficiency (%) Gain (dB) Swept Data Impedances of CGH40025F vsOptimized Output Power with Source and Load Impedances Optimized andCW Load for PSAT Power in CGH40025-AMP for P3dB in CGH40025F-TB VDD =Vdd 28=V, = 250 mA, Freq = 3.7 GHz 28 IV, DQIdq = 250 mA, Freq = 3.7 GHz 0 20 25 30 35 40 45 Output Power (dBm) Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH40025 Rev 4.0 K Factor MAG (dB) Maximum Available Gain and K Factor of the CGH40025 VDD = 28 V, IDQ = 250 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40025F VDD = 28 V, IDQ = 250 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 7.75 + j15.5 20 + j5.2 1000 3.11 + j5.72 17 + j6.66 1500 2.86 + j1.63 16.8 + j3.2 2500 2.4 - j3.52 8.02 + j4.32 3500 1.31 - j7.3 5.85 - j0.51 Note 1. VDD = 28V, IDQ = 250mA in the 440166 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40025 Power Dissipation De-rating Curve CGH40025F CW Power Dissipation De-rating Curve 30 Power Dissipation (W) 25 20 15 Note 1 10 5 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40025-AMP Demonstration Amplifier Circuit Schematic CGH40025-AMP Demonstration Amplifier Circuit Outline Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40025-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R2 RES,1/16W,0603,1%,47 OHMS R1 RES,1/16W,0603,1%,100 OHMS 1 1 C6 CAP, 470PF, 5%,100V, 0603 1 C16 CAP, 33 UF, 20%, G CASE 1 C15 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C8 CAP 10UF 16V TANTALUM 1 C13 CAP, 100.0pF, +/-5%, 0603 1 C1 CAP, 0.8pF, +/-0.1pF, 0603 1 C2 CAP, 0.5pF, +/-0.05pF, 0603 1 C9,C10 CAP, 1.0pF, +/-0.1pF, 0603 2 C4,C11 CAP, 10.0pF,+/-5%, 0603 2 C5,C12 CAP, 39pF, +/-5%, 0603 2 C7,C14 CAP,33000PF, 0805,100V, X7R 2 J3,J4 CONN SMA STR PANEL JACK RECP 2 HEADER RT>PLZ .1CEN LK 5POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH40025F or CGH40025P 1 J1 CGH40025F-AMP Demonstration Amplifier Circuit Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40025 (Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.902 -151.72 11.80 92.09 0.025 6.22 0.393 -140.34 600 MHz 0.901 -157.13 9.89 87.31 0.025 2.28 0.402 -143.54 700 MHz 0.900 -161.20 8.49 83.18 0.025 -0.99 0.412 -145.64 800 MHz 0.900 -164.41 7.42 79.49 0.025 -3.82 0.424 -147.11 900 MHz 0.901 -167.04 6.58 76.10 0.024 -6.33 0.436 -148.22 1.0 GHz 0.902 -169.26 5.89 72.93 0.024 -8.60 0.449 -149.12 1.1 GHz 0.903 -171.19 5.33 69.93 0.024 -10.69 0.462 -149.91 1.2 GHz 0.904 -172.89 4.86 67.07 0.023 -12.61 0.476 -150.65 1.3 GHz 0.905 -174.43 4.45 64.33 0.023 -14.39 0.489 -151.38 1.4 GHz 0.906 -175.84 4.10 61.68 0.022 -16.06 0.503 -152.12 1.5 GHz 0.907 -177.14 3.80 59.12 0.022 -17.61 0.517 -152.87 1.6 GHz 0.909 -178.36 3.54 56.64 0.022 -19.05 0.531 -153.65 1.7 GHz 0.910 -179.52 3.30 54.22 0.021 -20.38 0.545 -154.46 1.8 GHz 0.912 179.38 3.09 51.87 0.021 -21.62 0.558 -155.29 1.9 GHz 0.913 178.33 2.90 49.58 0.020 -22.75 0.571 -156.15 2.0 GHz 0.914 177.30 2.73 47.34 0.020 -23.78 0.584 -157.04 2.1 GHz 0.916 176.31 2.58 45.15 0.019 -24.70 0.596 -157.95 2.2 GHz 0.917 175.34 2.44 43.02 0.019 -25.52 0.608 -158.88 2.3 GHz 0.918 174.39 2.31 40.92 0.018 -26.22 0.620 -159.82 2.4 GHz 0.920 173.46 2.19 38.88 0.018 -26.82 0.631 -160.78 2.5 GHz 0.921 172.54 2.09 36.87 0.017 -27.29 0.642 -161.76 2.6 GHz 0.922 171.63 1.99 34.91 0.016 -27.64 0.652 -162.74 2.7 GHz 0.923 170.73 1.90 32.98 0.016 -27.85 0.662 -163.73 2.8 GHz 0.925 169.84 1.82 31.09 0.015 -27.92 0.672 -164.73 2.9 GHz 0.926 168.95 1.74 29.24 0.015 -27.85 0.681 -165.73 3.0 GHz 0.927 168.07 1.67 27.41 0.014 -27.61 0.690 -166.74 3.2 GHz 0.929 166.30 1.54 23.86 0.013 -26.63 0.706 -168.76 3.4 GHz 0.931 164.54 1.42 20.42 0.013 -24.89 0.721 -170.79 3.6 GHz 0.932 162.78 1.33 17.08 0.012 -22.30 0.735 -172.82 3.8 GHz 0.934 161.00 1.24 13.84 0.011 -18.80 0.748 -174.85 4.0 GHz 0.935 159.21 1.16 10.67 0.011 -14.40 0.759 -176.88 4.2 GHz 0.936 157.39 1.10 7.58 0.010 -9.18 0.769 -178.90 4.4 GHz 0.937 155.55 1.04 4.55 0.010 -3.38 0.778 179.07 4.6 GHz 0.938 153.67 0.98 1.57 0.010 2.65 0.787 177.04 4.8 GHz 0.939 151.77 0.94 -1.36 0.011 8.52 0.794 175.00 5.0 GHz 0.939 149.82 0.89 -4.25 0.011 13.87 0.801 172.96 5.2 GHz 0.939 147.82 0.86 -7.11 0.012 18.48 0.807 170.90 5.4 GHz 0.939 145.78 0.82 -9.95 0.013 22.25 0.812 168.83 5.6 GHz 0.940 143.68 0.79 -12.78 0.014 25.17 0.817 166.74 5.8 GHz 0.939 141.53 0.77 -15.59 0.016 27.32 0.821 164.62 6.0 GHz 0.939 139.31 0.74 -18.41 0.017 28.77 0.825 162.48 To download the s-parameters in s2p format, go to the CGH40025 Product Page and click on the documentation tab. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40025 (Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.917 -157.22 12.62 91.45 0.018 7.56 0.458 -158.97 600 MHz 0.916 -161.92 10.57 87.33 0.018 4.70 0.465 -160.93 700 MHz 0.916 -165.46 9.07 83.78 0.018 2.41 0.472 -162.19 800 MHz 0.916 -168.28 7.94 80.58 0.018 0.51 0.478 -163.04 900 MHz 0.916 -170.61 7.05 77.64 0.017 -1.12 0.485 -163.64 1.0 GHz 0.916 -172.60 6.33 74.88 0.017 -2.55 0.493 -164.09 1.1 GHz 0.917 -174.33 5.74 72.25 0.017 -3.82 0.500 -164.45 1.2 GHz 0.917 -175.88 5.24 69.73 0.017 -4.94 0.508 -164.77 1.3 GHz 0.918 -177.28 4.82 67.30 0.017 -5.95 0.516 -165.06 1.4 GHz 0.918 -178.57 4.46 64.94 0.017 -6.84 0.525 -165.36 1.5 GHz 0.919 -179.78 4.14 62.65 0.016 -7.63 0.533 -165.67 1.6 GHz 0.919 179.09 3.87 60.41 0.016 -8.31 0.542 -165.99 1.7 GHz 0.920 178.01 3.62 58.22 0.016 -8.90 0.550 -166.35 1.8 GHz 0.921 176.98 3.40 56.07 0.016 -9.39 0.559 -166.73 1.9 GHz 0.921 175.99 3.21 53.97 0.015 -9.77 0.568 -167.14 2.0 GHz 0.922 175.03 3.03 51.90 0.015 -10.06 0.577 -167.59 2.1 GHz 0.923 174.09 2.87 49.87 0.015 -10.24 0.585 -168.07 2.2 GHz 0.924 173.17 2.73 47.87 0.014 -10.31 0.594 -168.57 2.3 GHz 0.924 172.27 2.60 45.91 0.014 -10.27 0.602 -169.11 2.4 GHz 0.925 171.39 2.47 43.97 0.014 -10.12 0.610 -169.67 2.5 GHz 0.926 170.51 2.36 42.07 0.014 -9.85 0.619 -170.26 2.6 GHz 0.926 169.65 2.26 40.19 0.013 -9.46 0.626 -170.88 2.7 GHz 0.927 168.79 2.16 38.34 0.013 -8.95 0.634 -171.52 2.8 GHz 0.928 167.93 2.08 36.52 0.013 -8.31 0.642 -172.17 2.9 GHz 0.928 167.08 1.99 34.72 0.013 -7.54 0.649 -172.85 3.0 GHz 0.929 166.24 1.92 32.94 0.013 -6.65 0.656 -173.55 3.2 GHz 0.930 164.54 1.78 29.45 0.012 -4.49 0.670 -175.00 3.4 GHz 0.931 162.85 1.66 26.05 0.012 -1.85 0.683 -176.50 3.6 GHz 0.932 161.14 1.55 22.72 0.012 1.19 0.695 -178.06 3.8 GHz 0.933 159.42 1.46 19.46 0.012 4.55 0.706 -179.66 4.0 GHz 0.933 157.68 1.38 16.27 0.012 8.08 0.716 178.70 4.2 GHz 0.934 155.91 1.31 13.12 0.012 11.64 0.726 177.02 4.4 GHz 0.934 154.11 1.24 10.03 0.013 15.08 0.735 175.30 4.6 GHz 0.935 152.28 1.18 6.97 0.013 18.26 0.743 173.56 4.8 GHz 0.935 150.41 1.13 3.95 0.014 21.09 0.750 171.78 5.0 GHz 0.935 148.49 1.08 0.96 0.015 23.50 0.756 169.97 5.2 GHz 0.935 146.53 1.04 -2.00 0.016 25.48 0.762 168.12 5.4 GHz 0.935 144.52 1.00 -4.96 0.017 27.02 0.768 166.24 5.6 GHz 0.935 142.45 0.97 -7.90 0.018 28.12 0.773 164.32 5.8 GHz 0.934 140.31 0.94 -10.84 0.020 28.83 0.777 162.36 6.0 GHz 0.934 138.12 0.91 -13.79 0.021 29.18 0.781 160.36 To download the s-parameters in s2p format, go to the CGH40025 Product Page and click on the documentation tab. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40025 (Small Signal, VDS = 28 V, IDQ = 400 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.924 -159.12 12.64 91.13 0.015 8.27 0.485 -163.72 600 MHz 0.923 -163.56 10.58 87.23 0.015 5.84 0.491 -165.34 700 MHz 0.923 -166.92 9.08 83.86 0.015 3.96 0.497 -166.41 800 MHz 0.923 -169.60 7.95 80.83 0.015 2.43 0.502 -167.13 900 MHz 0.923 -171.82 7.06 78.03 0.015 1.16 0.508 -167.65 1.0 GHz 0.923 -173.72 6.34 75.40 0.015 0.08 0.514 -168.05 1.1 GHz 0.923 -175.39 5.75 72.89 0.015 -0.84 0.520 -168.36 1.2 GHz 0.924 -176.88 5.26 70.48 0.015 -1.62 0.526 -168.63 1.3 GHz 0.924 -178.24 4.84 68.15 0.015 -2.29 0.533 -168.88 1.4 GHz 0.924 -179.50 4.48 65.89 0.015 -2.85 0.539 -169.13 1.5 GHz 0.925 179.33 4.17 63.68 0.014 -3.31 0.546 -169.38 1.6 GHz 0.925 178.22 3.89 61.52 0.014 -3.67 0.553 -169.65 1.7 GHz 0.926 177.17 3.65 59.41 0.014 -3.93 0.560 -169.94 1.8 GHz 0.926 176.16 3.43 57.34 0.014 -4.09 0.568 -170.26 1.9 GHz 0.927 175.18 3.24 55.30 0.014 -4.16 0.575 -170.60 2.0 GHz 0.927 174.24 3.07 53.29 0.014 -4.13 0.582 -170.97 2.1 GHz 0.928 173.32 2.91 51.32 0.013 -4.00 0.589 -171.36 2.2 GHz 0.928 172.41 2.76 49.38 0.013 -3.76 0.597 -171.79 2.3 GHz 0.929 171.53 2.63 47.46 0.013 -3.43 0.604 -172.24 2.4 GHz 0.929 170.65 2.51 45.57 0.013 -2.99 0.611 -172.71 2.5 GHz 0.929 169.79 2.40 43.71 0.013 -2.44 0.618 -173.22 2.6 GHz 0.930 168.93 2.30 41.87 0.013 -1.79 0.625 -173.75 2.7 GHz 0.930 168.08 2.20 40.05 0.012 -1.04 0.632 -174.30 2.8 GHz 0.931 167.24 2.12 38.26 0.012 -0.18 0.638 -174.87 2.9 GHz 0.931 166.40 2.04 36.48 0.012 0.77 0.645 -175.47 3.0 GHz 0.932 165.56 1.96 34.73 0.012 1.82 0.651 -176.08 3.2 GHz 0.932 163.88 1.82 31.28 0.012 4.18 0.663 -177.37 3.4 GHz 0.933 162.20 1.70 27.91 0.012 6.83 0.675 -178.72 3.6 GHz 0.934 160.51 1.60 24.60 0.012 9.69 0.686 179.86 3.8 GHz 0.934 158.80 1.51 21.35 0.012 12.64 0.696 178.39 4.0 GHz 0.935 157.07 1.42 18.16 0.013 15.58 0.706 176.88 4.2 GHz 0.935 155.32 1.35 15.01 0.013 18.40 0.715 175.31 4.4 GHz 0.935 153.53 1.29 11.91 0.014 21.01 0.723 173.70 4.6 GHz 0.935 151.70 1.23 8.84 0.014 23.33 0.730 172.05 4.8 GHz 0.935 149.84 1.17 5.80 0.015 25.32 0.737 170.36 5.0 GHz 0.935 147.93 1.13 2.79 0.016 26.96 0.743 168.63 5.2 GHz 0.935 145.98 1.09 -0.20 0.017 28.24 0.749 166.86 5.4 GHz 0.935 143.97 1.05 -3.19 0.018 29.16 0.754 165.05 5.6 GHz 0.934 141.91 1.01 -6.16 0.020 29.75 0.759 163.20 5.8 GHz 0.934 139.78 0.98 -9.14 0.021 30.02 0.763 161.30 6.0 GHz 0.933 137.58 0.96 -12.12 0.023 29.99 0.767 159.35 To download the s-parameters in s2p format, go to the CGH40025 Product Page and click on the documentation tab. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH40025F (Package Type — 440166) Product Dimensions CGH40025P (Package Type — 440196) Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH40025F GaN HEMT Each CGH40025P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH40025F-TB CGH40025F-AMP Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH40025 Rev 4.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGH40025 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf