CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Package Type : 440166 and 440196 PN: CGHV400 30 Typical Performance 0.96 - 1.4 GHz (TC = 25˚C) , 50 V Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units Gain @ PSAT 15.6 15.8 16.6 15.8 dB Saturated Output Power 29 30 36 31 W Drain Efficiency @ PSAT 62 74 64 67 % Note: Measured CW in the CGHV40030-AMP application circuit. • Up to 6 GHz Operation • 30 W Typical Output Power • 16 dB Gain at 1.2 GHz • Application circuit for 0.96 - 1.4 GHz • 70% Efficiency at PSAT • 50 V Operation Rev 1.0 - May 2015 Features Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 5.2 mA 25˚C Maximum Drain Current IDMAX 4.2 A 25˚C Soldering Temperature2 TS 245 ˚C TC -40, +150 ˚C RθJC 5.9 ˚C/W 1 Case Operating Temperature3,4 Thermal Resistance, Junction to Case 5 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 Simulated at PDISS = 23.4 W 4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. 5 CW Electrical Characteristics (TC = 25˚C) - 50 V Typical Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 5.2 mA Gate Quiescent Voltage VGS(Q) – -2.6 – VDC VDS = 50 V, ID = 150 mA Saturated Drain Current2 IDS 3.9 5.2 – A VDS = 6.0 V, VGS = 2.0 V V(BR)DSS 125 – – VDC VGS = -8 V, ID = 5.2 mA DC Characteristics1 Drain-Source Breakdown Voltage RF Characteristics3 (TC = 25˚C, F0 = 1.2 GHz unless otherwise noted) Power Gain GP 15.5 16 - dB VDD = 50 V, IDQ = 150 mA, POUT = PSAT POUT 30 35 – W VDD = 50 V, IDQ = 150 mA, POUT = PSAT η 62 65 - % VDD = 50 V, IDQ = 150 mA, POUT = PSAT VSWR - - 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 150 mA, POUT = 30 W CW Input Capacitance5 CGS – 7.4 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance5 CDS – 2 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.15 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Power4 Drain Efficiency4 Output Mismatch Stress4 Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV40030-AMP 4 PSAT is defined as IG = 0.52 mA 5 Includes package Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV40030 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - Typical Small Signal Response of CGHV40030-AMP Application Circuit VDD = 50 V, IDQ = 150 mA 30 25 20 Gain, Return Loss(dB) 15 10 5 0 -5 -10 -15 S11 -20 S21 -25 -30 S22 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Frequency (GHz) Figure 2. - Typical Large Signal Response of CGHV40030-AMP Application Circuit VDD = 50 V, IDQ = 150 mA, PIN = 29 dBm, TCASE = 25°C, CW 48.0 80 47.5 75 47.0 70 46.5 65 46.0 60 45.5 45.0 50 44.5 45 44.0 43.0 40 Output Power 43.5 35 Drain Efficiency 0.9 1.0 1.1 1.2 Frequency (GHz) 1.3 1.4 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 55 Output Power CGHV40030 Rev 1.0 Drain Efficiency (%) Output Power (dBm) Drain Efficiency 1.5 30 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV40030-AMP Application Circuit Bill of Materials CGHV40030-AMP Application Circuit Designator Description Qty R1 RES,1/16W,0603,1%,187 OHMS 1 R2 RES, 2.2 OHMS, +/- 1%, 1/16W,0603 1 R3 RES,1/16W,0603,1%,15.4 OHMS 1 L1 IND, 5.6nH, 0603 1 CAP, 2.7,+/-0.1pF, 0603, ATC 2 C5, C6, C11, C12 CAP, 1.2pF,+/-0.1pF, 0603, ATC 4 C2, C7, C8 CAP 1.8pF,+/-0.1pF 0603, ATC 2 C9, C10 CAP, 3.9pF,+/-0.1pF 0603, ATC 2 C1, C13 CAP, 24pF,+/-5% 0603, ATC 2 C14 CAP 10UF 16V TANTALUM 1 C15, C20 CAP, 33000pF, 0805, ATC 2 C16,C21 CAP, 470PF, 5%, 100V, 0603, 2 C17 CAP, 68pF,+/-0.1pF 0603, ATC 1 C22 CAP, 56PF +/- 5%, 0603 , ATC600S 1 C18 CAP, 33UF, 20%, G CASE 1 C19 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 C3, C4 J1,J2 J3 HEADER RT>PLZ .1CEN LK 5POS 1 BASEPLATE, CGH35015, 2.60 X 1.7 1 CGHV40030F/P PCB, RO4350, 0.020” THK 1 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV40030 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 5.5 + j0.9 43 + j20.8 1000 2.6 - j1.3 25.5 + j29.1 2000 3.8 - j0.9 11.5 + j17.3 3000 2.7 - j7.0 6.7 + j7.8 4000 2.8 - j13.4 6.5 + j1.7 Note : VDD = 50 V, IDQ = 150 mA Note2: Impedances are extracted from source and load pull data derived from the transistor. 1 Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV40030 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGHV40030 (Small Signal, VDS = 50 V, IDQ = 150 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.92 -135.45 21.23 101.31 0.01 16.50 0.32 -74.10 600 MHz 0.92 -143.51 18.06 95.44 0.01 11.72 0.32 -79.66 700 MHz 0.91 -149.71 15.66 90.50 0.01 7.89 0.31 -84.44 800 MHz 0.91 -154.67 13.78 86.16 0.01 4.69 0.32 -88.69 900 MHz 0.91 -158.75 12.27 82.26 0.01 1.97 0.33 -92.58 1.0 GHz 0.91 -162.21 11.04 78.67 0.01 -0.41 0.34 -96.19 1.1 GHz 0.91 -165.20 10.02 75.32 0.01 -2.50 0.35 -99.57 1.2 GHz 0.91 -167.83 9.15 72.16 0.01 -4.34 0.36 -102.79 1.3 GHz 0.91 -170.19 8.41 69.14 0.01 -5.98 0.37 -105.86 1.4 GHz 0.92 -172.34 7.76 66.24 0.01 -7.43 0.39 -108.80 1.5 GHz 0.92 -174.30 7.20 63.45 0.01 -8.69 0.40 -111.64 1.6 GHz 0.92 -176.13 6.70 60.74 0.01 -9.77 0.42 -114.39 1.7 GHz 0.92 -177.83 6.26 58.11 0.01 -10.67 0.43 -117.06 1.8 GHz 0.92 -179.44 5.86 55.54 0.01 -11.39 0.45 -119.65 1.9 GHz 0.92 179.04 5.50 53.03 0.01 -11.90 0.46 -122.18 2.0 GHz 0.92 177.58 5.18 50.58 0.01 -12.20 0.48 -124.64 2.1 GHz 0.92 176.19 4.89 48.17 0.01 -12.26 0.49 -127.05 2.2 GHz 0.92 174.84 4.62 45.81 0.01 -12.07 0.51 -129.41 2.3 GHz 0.93 173.54 4.37 43.50 0.01 -11.60 0.52 -131.72 2.4 GHz 0.93 172.28 4.14 41.22 0.01 -10.82 0.53 -133.98 2.5 GHz 0.93 171.06 3.93 38.98 0.01 -9.70 0.55 -136.21 2.6 GHz 0.93 169.86 3.73 36.78 0.01 -8.20 0.56 -138.39 2.7 GHz 0.93 168.70 3.55 34.62 0.01 -6.30 0.57 -140.53 2.8 GHz 0.93 167.55 3.38 32.49 0.01 -3.97 0.59 -142.63 2.9 GHz 0.93 166.43 3.23 30.39 0.01 -1.18 0.60 -144.70 3.0 GHz 0.94 165.33 3.08 28.33 0.01 2.04 0.61 -146.73 3.2 GHz 0.94 163.18 2.81 24.29 0.01 9.69 0.64 -150.70 3.4 GHz 0.94 161.08 2.57 20.36 0.01 18.36 0.66 -154.54 3.6 GHz 0.94 159.05 2.36 16.55 0.01 27.05 0.68 -158.26 3.8 GHz 0.95 157.05 2.17 12.85 0.01 34.79 0.70 -161.87 4.0 GHz 0.95 155.10 2.00 9.25 0.01 41.04 0.72 -165.37 4.2 GHz 0.95 153.19 1.85 5.75 0.01 45.73 0.73 -168.77 4.4 GHz 0.95 151.31 1.72 2.35 0.01 49.02 0.75 -172.07 4.6 GHz 0.96 149.46 1.59 -0.96 0.01 51.19 0.76 -175.28 4.8 GHz 0.96 147.65 1.48 -4.18 0.01 52.48 0.78 -178.39 5.0 GHz 0.96 145.86 1.37 -7.31 0.01 53.11 0.79 178.58 5.2 GHz 0.96 144.11 1.28 -10.36 0.01 53.24 0.80 175.63 5.4 GHz 0.96 142.38 1.19 -13.33 0.01 52.98 0.82 172.76 5.6 GHz 0.96 140.68 1.11 -16.22 0.02 52.43 0.83 169.97 5.8 GHz 0.97 139.00 1.04 -19.03 0.02 51.65 0.84 167.25 6.0 GHz 0.97 137.35 0.98 -21.76 0.02 50.70 0.85 164.60 To download the s-parameters in s2p format, go to the CGHV40030 Product Page and click on the documentation tab. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV40030 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV40030-AMP Application Circuit Schematic CGHV40030-AMP Application Circuit Outline Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV40030 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV40030F (Package Type - 440166 ) Product Dimensions CGHV40030P (Package Type - 440196) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV40030 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV40030F/P Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency Value Units 6 GHz 30 W Flanged/Pill - 1 Power Output Package Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV40030 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV40030F GaN HEMT Each CGHV40030P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV40030-TB CGHV40030F-AMP Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV40030 Rev 1.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.313.5639 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV40030 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf