CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for 3.1-3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Package Type : 440193 & 44 0206 PN: CGH3506 0F2 & CGH35 060P2 Typical Performance Over 3.1-3.5 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain 12.0 13.2 11.5 dB POUT @ PIN = 36.5 dBm 47.0 47.6 46.7 dBm POUT @ PIN = 36.5 dBm 10.4 11.06 10.1 dBm Drain Efficiency @ PIN = 36.5 dBm 55.0 62.0 62.0 % Input Return Loss -7.3 -17.0 -4.3 dB Note: Measured in the CGH35060F2-AMP1 amplifier circuit, under 100 µsec Pulse Width, 20% Duty Cycle and 28 V. Features 3.1 - 3.5 GHz Operation • 60 W Peak Power Capability • 12 dB Small Signal Gain • 60 % Drain Efficiency 15 Rev 4.0 - May 20 • Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 125 Volts Conditions 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 57.6 Watts Storage Temperature TSTG -55, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 14.4 mA 25˚C Maximum Drain Current1 IDMAX 6 A 25˚C Soldering Temperature2 TS 245 ˚C τ 80 in-oz Thermal Resistance, Junction to Case, Pulsed3 RθJC 1.67 ˚C/W 85˚C, Pulse Width = 300%, Duty Cycle = 10% Thermal Resistance, Junction to Case, CW RθJC 2.45 ˚C/W 85˚C, Pulse Width = 300%, Duty Cycle = 10% TC -40, +150 ˚C Screw Torque 3 Case Operating Temperature3 Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGH35060F2 at PDISS = 57.6 W Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 –2.3 VDC VDS = 10 V, ID = 14.4 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 200 mA Saturated Drain Current IDS 11.6 14.0 - A Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 14.4 mA DC Characteristics1 RF Characteristics 2,3 VDS = 6.0 V, VGS = 2 V (TC = 25˚C, F0 = 3.3 GHz unless otherwise noted) Small Signal Gain GSS 10.0 13.0 – dB VDD = 28 V, IDQ = 200 mA η 40 62 – % VDD = 28 V, IDQ = 200 mA, PIN = 36.5 dBm POUT 45.4 47.6 – dBm VDD = 28 V, IDQ = 200 mA, PIN = 36.5 dBm VSWR – – 10:1 Y No damage at all phase angles, VDD = 28 V, IDQ = 200 mA, POUT = 60 W Pulsed Input Capacitance CGS – 19.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 5.9 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Power Output4 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F2-AMP1 test fixture. 3 100 µS Pulse Width at 20% Duty Cycle. 4 Drain Efficiency = POUT / PDC. Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH35060F2/P2 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Typical Performance Small Signal Gain and Return Losses vs Frequency of the CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA 20 15 10 S11,S21, S22 (dB) 5 0 -5 -10 -15 -20 S11 -25 -30 2.00 S21 2.50 S22 3.00 3.50 4.00 4.50 5.00 Frequency (GHz) 70 70% 60 60% 50 50% 40 40% 30 Pout (dBm) Pout (W) Gain (dB) 30% ηd (%) 20 20% 10 10% 0 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 Drain Efficiency (%) Power (dBm) (W), Gain (dB) Output Power, Gain and Drain Efficiency vs Frequency of the CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA, Pulse Width = 100 µsec, Duty Cycle = 20% 0% 3550 Frequency (MHz) Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH35060F2/P2 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Typical Pulse Droop Performance 49.00 48.80 48.60 5000uS 10% (dBm) 1000uS 10% (dBm) 300uS 10% (dBm) 100uS 10% (dBm) 48.40 Power Level (dBm) 48.20 48.00 47.80 47.60 47.40 47.20 47.00 000.E+0 500.E-6 1.E-3 1.5E-3 2.E-3 2.5E-3 3.E-3 3.5E-3 4.E-3 4.5E-3 5.E-3 5.5E-3 6.E-3 Time (S) Typical Performance Data Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH35060F2/P2 Rev 4.0 K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 3100 3.6 -j13.5 8.0 -j8.5 3200 3.6 -j12.8 7.1 -j7.7 3300 3.5 -j12.1 6.5 -j6.8 3400 3.5 -j11.4 6.0 -j5.9 3500 3.3 -j10.7 5.6 -j5.1 Note1: VDD = 28V, IDQ = 200mA. In the 440193 package. Note2: Impedances are extracted from the CGH35060F2-AMP1 demonstration circuit and are not source and load pull data derived from the transistor. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH35060F2/P2 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf CGH35060F2-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description R1 RES, 1/16 W, 0603, 1%, 5.1 OHMS 1 R2 RES, 1/16 W, 0603, 1%, 100 OHMS 1 C6,C13,C19 CAP, 470 pF, +/-5%, 100 V, 0603 3 C16,C22 CAP, 33 UF 100 V ELECT FK SMD 2 C15,C21 CAP CER 1.0 UF, 100 V, 10%, X7R 1210 2 1 C8 CAP 10 UF 16V SMT TANTALUM C10 CAP, 20.0 pF, +/-5%, 0603, ATC 100B 1 C1 CAP, 5.1 pF, +/-5%, 0603, ATC 600S 1 C2 CAP, 3.0 pF, +/-0.1 pF, 0603, ATC 600S 1 C5,C12,C18,C30,C31 CAP, 4.7 pF, 5% pF, 0603, ATC 5 C4,C11,C17 CAP, 7.5 pF, 0.1 pF, 0603, ATC 3 C7,C14,C20 CAP CER 33000 pF, 0805, 100V, X7R 3 PCB 1 BASEPLATE 1 PRESSPLATE 1 CONN, SMA, PANEL MOUNT JACK 2 HEADER RT>PLZ .1CEN LK 9POS 1 2-56 SOC HD SCREW 1/4 SS 4 J2,J3 J1 W1 #2 SPLIT LOCKWASHER SS 4 WIRE, BLACK, 22 AWG ~ 2.0” 1 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 Qty CGH35060F2/P2 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf CGH35060F2-AMP1 Demonstration Amplifier Circuit Schematic CGH35060F2-AMP1 Demonstration Amplifier Circuit Outline Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH35060F2/P2 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Typical Package S-Parameters for CGH35060F2/P2 (Small Signal, VDS = 28 V, IDQ = 200 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.927 -170.09 7.16 79.27 0.016 -6.59 0.596 -168.07 600 MHz 0.928 -172.55 5.95 75.10 0.016 -9.91 0.605 -168.34 700 MHz 0.929 -174.46 5.08 71.25 0.015 -12.90 0.615 -168.44 800 MHz 0.930 -176.04 4.42 67.64 0.015 -15.66 0.626 -168.49 900 MHz 0.931 -177.39 3.91 64.20 0.015 -18.24 0.637 -168.54 1.0 GHz 0.932 -178.59 3.50 60.90 0.015 -20.65 0.648 -168.63 1.1 GHz 0.933 -179.70 3.16 57.72 0.015 -22.94 0.659 -168.78 1.2 GHz 0.935 179.27 2.88 54.66 0.014 -25.10 0.670 -168.99 1.3 GHz 0.936 178.29 2.65 51.70 0.014 -27.14 0.681 -169.25 1.4 GHz 0.937 177.34 2.45 48.83 0.014 -29.08 0.692 -169.58 1.5 GHz 0.938 176.41 2.28 46.04 0.013 -30.91 0.702 -169.96 1.6 GHz 0.939 175.49 2.13 43.33 0.013 -32.65 0.712 -170.40 1.7 GHz 0.940 174.57 2.00 40.70 0.013 -34.29 0.721 -170.87 1.8 GHz 0.941 173.65 1.88 38.13 0.013 -35.85 0.730 -171.39 1.9 GHz 0.942 172.73 1.78 35.62 0.012 -37.32 0.738 -171.94 2.0 GHz 0.943 171.79 1.69 33.16 0.012 -38.70 0.746 -172.53 2.1 GHz 0.943 170.83 1.62 30.76 0.012 -40.01 0.753 -173.14 2.2 GHz 0.944 169.85 1.55 28.40 0.012 -41.25 0.760 -173.78 2.3 GHz 0.944 168.85 1.49 26.07 0.012 -42.41 0.766 -174.44 2.4 GHz 0.944 167.82 1.44 23.78 0.011 -43.51 0.772 -175.12 2.5 GHz 0.945 166.75 1.39 21.52 0.011 -44.55 0.777 -175.82 2.6 GHz 0.944 165.64 1.35 19.27 0.011 -45.52 0.781 -176.54 2.7 GHz 0.944 164.49 1.32 17.03 0.011 -46.44 0.785 -177.27 2.8 GHz 0.944 163.29 1.29 14.80 0.011 -47.31 0.789 -178.03 2.9 GHz 0.943 162.03 1.26 12.57 0.011 -48.13 0.792 -178.80 3.0 GHz 0.943 160.71 1.24 10.34 0.010 -48.92 0.795 -179.59 3.2 GHz 0.941 157.85 1.22 5.80 0.010 -50.38 0.798 178.78 3.4 GHz 0.938 154.62 1.21 1.13 0.010 -51.75 0.800 177.06 3.6 GHz 0.934 150.94 1.21 -3.76 0.010 -53.09 0.800 175.23 3.8 GHz 0.928 146.65 1.24 -8.97 0.010 -54.51 0.798 173.28 4.0 GHz 0.921 141.58 1.28 -14.63 0.011 -56.12 0.794 171.18 4.2 GHz 0.911 135.46 1.35 -20.90 0.011 -58.11 0.787 168.89 4.4 GHz 0.897 127.93 1.45 -28.01 0.012 -60.71 0.777 166.35 4.6 GHz 0.880 118.44 1.57 -36.26 0.012 -64.27 0.764 163.51 4.8 GHz 0.857 106.23 1.73 -46.04 0.014 -69.22 0.746 160.26 5.0 GHz 0.828 90.20 1.93 -57.83 0.015 -76.13 0.723 156.46 5.2 GHz 0.796 69.08 2.15 -72.17 0.017 -85.57 0.692 151.91 5.4 GHz 0.770 42.01 2.35 -89.39 0.018 -97.96 0.649 146.29 5.6 GHz 0.766 10.14 2.48 -109.22 0.019 -113.08 0.590 139.24 5.8 GHz 0.793 -22.34 2.47 -130.55 0.020 -129.85 0.509 130.26 6.0 GHz 0.839 -50.86 2.33 -152.01 0.019 -146.93 0.401 118.41 To download the s-parameters in s2p format, go to the CGH35060F2/P2 Product Page, click on the documentation tab. Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH35060F2/P2 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Product Dimensions CGH35060F2 (Package Type — 440193) Product Dimensions CGH35060P2 (Package Type — 440206) Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH35060F2/P2 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Product Ordering Information Order Number Description CGH35060F2 GaN HEMT (Flanged) Each CGH35060P1 GaN HEMT (Pill) Each CGH35060-TB Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH35060F2-AMP Unit of Measure Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH35060F2/P2 Rev 4.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 919.407.5302 Ryan Baker Marketing Cree, RF Components 919.407.7816 Tom Dekker Sales Director Cree, RF Components 919.407.5639 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH35060F2/P2 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf