KIT8020-CRD-8FF1217P-1 CREE MOSFET Evaluation Kit User’s Manual REV A CREE Power Applications 10/31/2014 This document is prepared as a user reference guide to install and operate CREE evaluation hardware. Safety Note: Cree designed evaluation hardware is meant to be an evaluation tool in a lab setting for Cree components and to be handled and operated by highly qualified technicians or engineers. The hardware is not designed to meet any particular safety standards and the tool is not a production qualified assembly. Subject to change without notice. www.cree.com 1 1. Introduction This Evaluation (EVL) Board (model number CRD-8FF1217P-1/2) is to demonstrate the high performance of CREE 1200V SiC MOSFET and SiC Schottky diodes (SBD) with standard TO-247 package. It can be easily configured for several topologies from the basic phase-leg configuration. This EVL board can be used for the following purposes: • Evaluate the SiC MOSFET performance during switching events and steady state operation. • Easily configure different topologies with SiC MOSFET and SiC diodes • Functional testing with SiC MOSFET, for example, double pulse test to measure switching losses (Eon and Eoff ). • PCB layout example for driving SiC MOSFET and SiC diode. • Gate drive reference design for a TO-247 SiC MOSFET. This user manual will include information on the EVL board architecture, hardware configuration, Cree SiC power devices and an example application when using this board. Please note that JM1 as shown in Figure 1 is open circuit. It is necessary to short this with a wire or insert a shunt as shown in section 6.2 to complete the circuit before operation. 2. Board Overview The EVL board’s general block diagram is shown in Figure 1. There is a phase-leg which can include two SiC MOSFETs (Q1 and Q2) with half bridge phase-leg configuration and two anti-parallel SiC Schottky diodes (D1 and D3) with Q1 and Q2. The gate drive block with electrical isolation is designed on the board to drive SiC MOSFET Q1 and Q2. There are four power trace connectors (CON1, CON2, CON3 and CON5) and one 10 pin signal/supply voltage connector (CON4) on board. Figure 1: General block diagram of Cree Discrete SiC EVL board There are two versions of this EVL board. The first version with model number CRD-8FF1217P-1 includes two 2.5A gate driver integrating opto-coupler from Avago ACPL-W346 and two 2W isolation DC/DC converters from Mornsun G1212S2W for both high side and low side individually. The 2W DC/DC converter with +12V Vcc input generates +24V Vcc_out output voltage with 6KVDC isolation that is supplying voltage to W346 on a push-pull gate drive of the secondary side as shown in Figure 2. In this circuit a 5V zener in parallel with 1uF capacitor is used to generate -5V Vgs voltage for the SiC MOSFET, where turn-off and turn-on Vgs voltage is equal to 24V-5V=19V. Note that a SiC MOSFET can be turned off with zero voltage, and the -5V turn-off voltage helps with faster turn-off and lower turn-off losses. It also improves dv/ dt inducted self turn-on and noise immunity during transient periods with more headroom from Vgs turn-on threshold voltage. The first version can implement any PWM signal to drive the SiC phase leg block, if the board is operating in synchronous mode with a high side MOSFET and a low side MOSFET, the input signals must have additional dead time to avoid shoot through. 2 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual Vcc DC/DC Vcc_out CON1 ACPL-W346 HS_I/P Vg_HS Vs_LS VCC, Input PWM Signal, Enable CON4 Vcc DC/DC Vcc_out 5V SiC Phase-leg block CON3 ACPL-W346 LS_I/P Vg_LS Vs_LS 5V CRD8FF1217P-1 CON2 CON5 Figure 2. CRD-8FF1217P-1 Block diagram with ACPL-W346 The second version with model number CRD-8FF1217P-2 includes a single isolated high side and low side driver from Silicon Labs Si8233 to drive both high side and low side MOSFETs together as shown in Figure 3. The Vcc with 5V input to Si8233 is a supply voltage for logic on the primary side, and +22V_Vcc with +22V input is supply voltage for a pushpull driver on secondary side. The driver IC has two independent sink/sources with 5KVrms withstand voltage. The +22V voltage is to directly supply VDD to low side drive for Vg_LS, while for high side supply voltage, a bootstrap drive circuit is used to supply Vcc on the high side. Figure 4 shows the bootstrap drive circuit. When Q1 is turned on and SW is pulled down to the ground, the bootstrap capacitor, C7, charges through the bootstrap diode D5 from the VDD (+22V_Vcc) power supply as shown by the red dashed line. This is provided by VDDA when SW is pulled to a higher voltage by high side switch Q2, the VDDA supply floats and the bootstrap diode reverses bias and blocks the rail voltage and supply high side drive shown as blue dashed line. The bootstrap diode D5 must withstand high blocking voltage with low reverse recovery current to minimize noise. In this board, a Cree 1200V SiC Schottky diode C4D02120E is used. Also, a 5V zener with 1uF is in series with a Vg trace on both the high side and low side, which can generate -5V Vgs voltage for SiC MOSFET turn-off. The bootstrap circuit has the advantage of being simple and low cost, but has some limitations. Duty-cycle and on-time is limited by the need to refresh the charge in the bootstrap capacitor, which limits the topology application for this second version of the EVL board when duty cycle is variable. However, it can work well on most topologies with fixed duty cycle, such as phase shift full-bridge or LLC resonant converter. The Si8233 has an integrated dead time function with a resistor to ground used to set. So, the input signals do not need additional dead time on this version. +22V_Vcc HS_I/P VCC, Input PWM Signal, Enable SiC Phase-leg block 5V Vg_HS Vs_LS CON4 Vcc 5V Disable CON3 Vg_LS Vs_LS LS_I/P CRD8FF1217P-2 Figure 3. CRD-8FF1217P-2 Block diagram with Si8233 3 CON1 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual CON2 CON5 Vin D5 VDD VDDA VOA GNDA C7 Q2 Si8233 VOB GNDB SW Q1 Figure 4. Simplified bootstrap drive circuit on CRD-8FF1217P-2 version The EVL board size is 124mmx120mmx40mm (not including heatsink). Different types of heatsinks can be assembled depending on your cooling requirements. Figure 5A shows the board attached with a 120mmx120mmx45mm heatsink on the bottom of PCB board as an example. SiC devices are horizontal with the PCB board, however, users can choose any type of heatsink that works with the standard TO-247 package. Figure 5b gives another example for a vertical heatsink attachment with PCB board and SiC power devices. Figure 5a. Cree EVL board assembly (-1 is shown on left). See Appendix for assembly parts information. Figure 5b. Cree EVL board picture with a vertical heatsink for TO-247 package 3. Configurations The EVL board can be adaptable to implement difference topologies when using the different configurations of SiC MOSFETs and SiC diodes. It is possible to test several topologies with this board: synchronous Buck, non-synchronous Buck 4 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual (or high-side Buck), synchronous Boost, non-synchronous Boost, half phase-leg bridge converter, H bridge converter (2x EVL boards) and bi-directional buck-boost converters.Table 1 summarizes the possible topologies that can be implemented using this EVL board. For the phase-leg configuration, it can either use discrete anti-parallel SiC SBD or body diode of SiC MOSFET, thus the body diode of SiC MOSFET can be evaluated without anti-parallel diode with option one in the below table. With double EVL boards, H-bridge converter and bi-directional DC/DC converter can be configured. For H-bridge with different control architecture, the phase shift full bridge, resonant LLC ZVS converter and single phase DC/ AC converter can all be achieved. For bi-directional DC/DC converter, it can achieve either Buck from port 1 to port 2 or Boost from port2 to port 1. Furthermore, with three EVL boards, it can even be set up as a three-phase DC/AC inverter for some motor drive or inverter applications. Table. 1 The EVL board topology configuration Option One: Syn. Buck converter or Phase-leg bridge topology without antiparallel diodes • CON1 • • Q2 CON3 L Cout Cin HVDC RL Q1 CON2 CON5 Option Two: Phase-leg bridge topology with antiparallel SiC SBD • CON1 Q2 • • D3 CON3 Q1 • • • CON1 Q2 CON3 • • • L Cout D1 Cin RL • • CON1 Q2 • • • CON3 L Cin Q1 CON2 CON5 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual Step down voltage Connect inductor L with CON3 as output CON1: INPUT CON3: OUTPUT CON2, CON5: GND HVDC CON2 CON5 Option Four: Syn. Boost converter Phase-leg, switching with external anti-parallel diode SiC SBD used CON1, CON3: Input/ output depends on which topology apply to board CON2, CON5: GND D1 CON2 CON5 Option Three: Non-syn Buck converter 5 • • • Step down voltage or phase leg topology w/o anti-parallel diodes SiC Body diode used Connect inductor L with CON3 as output CON1: INPUT CON3: OUTPUT CON2, CON5: GND Cout HVDC RL Step up voltage Connect inductor L with CON3 as input CON1: OUTPUT CON3: INPUT CON2, CON5: GND Option Five: Non-syn Boost converter • • CON1 • • • D3 CON3 L Cin Q1 Cout RL HVDC CON2 CON5 Option Six: Diode bridge Step up voltage Connect inductor L with CON3 as input CON1: OUTPUT CON3: INPUT CON2, CcON5: GND CON1 • • • • Bridge diode with SiC SBD CON1: OUTPUT (Positive) CON3: INPUT CON2, CON5: OUTPUT (Negative) • Full bridge converter with Phase shift or resonant single phase DC/AC inverter D3 CON3 D1 CON2 CON5 Option Seven: H bridge topology configuration using two EVL boards EVL1 CON1 • Q2 Cin L CON3 Cout HVDC RL Q1 CON2 CON5 EVL2 CON1 Q2 CON3 Q1 CON2 CON5 Option Eight: Bi-directional DC/DC converter Port1 EVL1 Q2 • CON1 CON1 CON3 CON3 Q1 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual • C2 Q1 CON2 CON5 Port2 Q2 L C1 6 EVL2 CON2 CON5 Port 1 is input and port 2 is output with Buck converter, Q2 of EVL2 is constantly turn-on, and Q1 of EVL2 is constantly turn-off Port 1 is output and port 2 is input with Boost converter, Q2 of EVL1 is constantly turn-on and Q1 of EVL2 is constantly turn-off 4. Hardware Description The above figures give top view of the EVL board, the top right is CRD-8FF1217P-1 and the top left is CRD-8FF1217P-2. The picture highlights key test points and connectors on the boards. 4.1 Test points To make testing more effective and easy, the BNC connectors are added on the board to measure both Vgs and Vds waveforms for the SiC MOSFET Q1 and Q2. A current test point with two unpopulated through-hole contacts is available to measure the drain current through the low side switch. A jumper (JM1) can be inserted to the test point and measure current using current probe. In addition, coaxial shunts (http://www.tandmresearch.com/) are recommended for accurate current measurements with less delay time; this can minimize the stray inductance on the switching loops and achieve accurate switching loss measurement. Also, some test points are added between gate resistors for measuring the voltage across the gate resistors. Thus it can estimate the gate current Ig to the SiC MOSFET. 4.2 Connectors For the connectors, CON1, CON2, CON3 and CON5 are power trace connectors, and their definitions are depending on the different topology as described in Table 1. CON4 is for the signal/logic inputs and supply voltage for ICs. The definition of CON4 for each pin is shown in Table 2. Table. 2 Pin definitions for connector CON4 CRD-8FF1217P-1 CRD-8FF1217P-2 N/A +22V_VCC: +22Vdc Pin2 Pin3 Pin4 Pin5 Pin6 Pin7 Pin8 N/A N/A N/A VCC: +12Vdc VCC_RTN: GND for +12Vdc Input_HS: signal input for Q2 Input_HS_RTN: signal ground for Q2 Pin9 Pin10 Input_LS: signal input for Q1 Input_LS_RTN: signal ground for Q1 +22V_VCC_RTN:GND for +22V NA NA 5V_VCC: +5Vdc VCC_RTN: GND for +5Vdc Input_HS: signal input for Q2 Disable: 5V = disable (output pull low), 0V = Enable (output = input state) Input_LS: signal input for Q1 VCC_RTN: GND for +5V Connector CON4 Pin Pin1 4.3 Board design A SiC device is a fast switching device, and it is important to maximize SiC’s high performance and minimize ringing with fast switching. The EVL board introduces some design approaches to minimize the ringing on the board: • The gate drive and logic signal are put on top of the PCB board, while the main power trace and switching devices are put on the bottom layer. There is no crossover or overlap between gate signal and switching power trace, which can minimize high dv/dt and di/dt noise influence from the switching node to gate signal. 7 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual • Four de-coupling film capacitors with valued 10nF, 10nF, 0.1uF and 5uFare placed close to the SiC devices; it can reduce high frequency switching loop and bypass noise within switching loop. • The layout of gate drive circuitry is designed with symmetric trace distance, which can introduce balance impendence on the gate drive. Also, the gate drive is placed as close as possible to the SiC MOSFETs. • The power trace layout is optimized to reduce the switching loops. 5. SiC Devices SiC devices including SiC MOSFET and SiC Schottky diodes are recognized as next generation wide bandgap devices. It can provide fast switching with less loss compared to conventional Si devices. Cree (www.cree.com/power) is the world’s leading manufacturer of silicon-carbide Schottky diodes and MOSFETs for efficient power conversion. The standard TO-247 package 1200V SiC MOSFETs and SiC SBDs are available to order or apply for free samples at Cree website in order to evaluate SiC power devices with this EVL board. The different on-state resistor Rds(on) MOSFETs are available from Cree with standard drain to source on-state resistor 25mohm, 40mohm, 80mohm, 160mohm and 280mohm. 6. Example Application and Measurements 6.1 Board Setup In order to demonstrate the EVL with SiC devices, a synchronous phase-leg Buck converter configuration is used as an example to evaluate the performance of the SiC EVL board. This is option one configuration on table 1. The table below gives the electrical parameters. Please note the switching frequency is at 40KHZ in this case due to the design limitation of the available inductor, but it does not mean the switching frequency is limited to 40KHZ. Because of low switching losses of SiC MOSFET, the switching frequency can increase to higher without sacrificing much switching losses when using SiC MOSFET. The purpose of 40KHZ setting is competing with 1200V Si IGBT for inverter application with this phase-leg configuration, which frequency is normally ranged from 15KHZ to 20KHZ. In the testing, two 25mohm SiC MOSFETs are assembled on the PCB board with heatsink for both high side Q2 and low side Q1. The figure gives the test setup with EVL boards. The signal generators are used to generate high side and low side PWM signals with Input_HS and Input_LS. Note that the dead time period must be applied to the input signal between Input_HS and Input_LS for CRD-8FF1217P-1. For CRD-8FF1217P-2, the dead time function is integrated into the drive ICs; at this example, a 450ns dead time is set and there is no need for additional dead time between Input_ HS and Input_LS in CRD-8FF1217P-2. For CRD-8FF1217P-2, the disable pin 4.8 of CON4 should connect to ground of input +5V DC supply to enable gate signal to outputs. This disable pin can control the on/off of the board after the input is power up. Items Input Voltage Output Voltage Output RMS Current Output Power Peak MOS current Switching Frequency Duty Cycle Dead time Inductor Output Capacitors 8 Table. 3 Electrical parameters Parameters 600Vdc 300Vdc 30A 9KW 40A 40KHZ 50% ~450ns 400uH 300uF KIT8020-CRD-8FF1217P-1_UM Rev A User Manual Cree Discrete SiC EVL Board CON1 CON4 +12V DC supply VCC VCC_RTN Input_HS Input_HS_RTN PWM signal generator Input_LS Input_LS_RTN 4.5 4.6 400uH Q2 CON3 4.7 4.8 CON2 4.9 4.10 Gate drive 300uF Cin 600V DC source Cin 600V DC source RL Q1 CRD8FF1217P-1 CON5 +22V DC supply Cree Discrete SiC EVL Board +22V_VCC_IN +5V DC supply +22V_VCC_RTN VCC VCC_RTN Input_HS PWM signal generator Disable Input_LS VCC_RTN CON4 4.1 CON1 4.2 4.5 CON3 4.7 4.8 CON2 4.9 4.10 400uH Q2 4.6 Gate drive 300uF RL Q1 CRD8FF1217P-2 CON5 Figure 7. Test setup for the EVL boards with CRD-8FF1217P-1 and CRD-8FF1217P-2 Figure 8. Bench test setup of the EVL boards 6.2 Measurements To maximize the accuracy of the measurements when using the EVL board, some suggestions are listed below: • Use a highly accurate 0.0131ohm shunt (recommend SDN series shunt resistors from T&M Research), to measure the low side current waveform as shown below in Figure 9. This can help to shorten the current sense loop. Figure 9. Low side current measurement • A BNC probe is connected to measure low-side Vgs waveform, a x100 HV probe is used to measure low side Vds 9 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual • • • • • • waveform, and a differential probe is used to measure high-side Vgs waveform. All probes must be placed as close as possible to reduce incorrect ringing due to probe placement. Place the power inductor as close as possible to connect at CON3 to reduce the switching node loop area, and a 1uF 1200V film capacitors is connected between the output of inductor and ground connector CON5. A 12W AC fan is used to cool the heatsink and inductor when measuring waveforms and taking thermal measurements. A RC snubber is added on the drain to source to damp high dv/dt ringing on the switching node and slow the high dv/dt. A capacitance (1nF) is added between gate to source terminal to shunt the miller current from drain to gate. This external capacitor will introduce low impedance path for Cdv/dt from miller capacitance effect and reduce the ringing on the gate pins. Use of a ferrite bead (FB) on the gate pin of TO-247 MOSFETs will introduce high impedance on the gate path for MHz high frequency and reduce the Vgs ringing. Reduce the stray capacitance of inductor with single layer structure. D 12ohm 1N5819HW 5ohm FB G 5ohm 1nF TO-247 220pF S D 12ohm 1N5819HW FB 5ohm 5ohm G 1nF 220pF TO-247 S Figure 10. Gate drive and RC snubber configuration 6.3Test data The switching waveforms are shown in the below figures. In the operation of the synchronous Buck converter, the lowside body diode conducts before low-side MOSFET is turned on, thus this low-side MOSFET operates in Zero Voltage Switching (ZVS) mode and high-side MOSFET operates in hard-switching mode. However, high dv/dt during fast transient of high-side MOSFET will affect the operational behavior of the low-side MOSFET, and the charge stored in miller capacitance will be transferred via its gate loop, inducing some spurious gate voltage in this topology. The above methods mentioned in section 6.2 will help to damp this noise and reduce the ringing on the gate and drain to source. Note that the incorrect test method itself may also introduce some noises from oscilloscope measurement, but it is sometimes not a true representation of the actual transient events on the switching devices. 10 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual Figure 11. Vgs, Id and Vds waveforms at 9KW loading (Ch1: low-side Vds yellow 200v/div); (Ch2: low-side Id blue 100mv/0.0131ohm/div); (Ch3: low-side Vgs pink 10v/div); (Ch4: high-side Vgs green 10v/div) 11 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual Figure 12. Vgs, Inductor current IL and Vds waveforms at 9KW loading (Ch1: low-side Vds yellow 200v/div); (Ch2: inductor current IL 10A/div); (Ch3: low-side Vgs pink 10v/div); (Ch4: high-side Vgs green 10v/div) 12 KIT8020-CRD-8FF1217P-1_UM Rev A User Manual The EVL board’s maximum efficiency in this configuration is around 98.9% at 4KW half load using the Yokogawa WT3000 to measure it. It includes losses from the inductor, switching devices, and capacitors. Considering the high switching frequency (40kHz) and high duty cycle (50%), the efficiency is high compared to conventional Si IGBT solutions. Figure 13. Efficiency data for this EVL board Figure 14 shows the thermal performance for this EVL board at full load 9KW after 30 minutes of continuous operation. The test condition is at room temperature with open frame and 12W fan cooling the heatsink and inductor. It demonstrates high performance of SiC MOSFET with low temperature, low losses and high switching frequency. Figure 14. Thermal photo for this EVL board 7. Reference 1. 2. 3. 4. 5. 13 C2M0025120D datasheet, Cree Inc C4D20120D datasheet, Cree Inc ‘Performance Evaluations of Hard-Switching Interleaved DC/DC Boost Converter with New Generation Silicon Carbide MOSFETs’ Available in Cree website: http://www.cree.com/Power/Document-Library ‘Design Considerations for Designing with Cree SiC Modules Part 1. Understanding the Effects of Parasitic Inductance’ Available in Cree website: http://www.cree.com/Power/Document-Library ‘Design Considerations for Designing with Cree SiC Modules Part 2. Understanding the Effects of Parasitic Inductance’ Available in Cree website: http://www.cree.com/Power/Document-Library KIT8020-CRD-8FF1217P-1_UM Rev A User Manual 8. Appendix Schematic of CRD-8FF1217P-1 TP10 1 HV_VCC -Vin -Vout 5 Input_HS 1 240 R0603 R10 Input_HS_RTN C13 33pF C0603 2 3 U2 Anode Vcc NC Vout Cathode Gnd R13 1 5R1 R0603 U3 +Vin C7 C8 2.2uF C0603 0.1uF C0603 VCC_RTN +Vout COM 2 -Vin -Vout CON4 1 2 3 4 5 6 7 8 9 10 Gate Driver input 1 240 R0603 R4 Input_LS_RTN C9 33pF C0603 2 3 2 L1 4 3 U1 Anode NC Vcc Vout Cathode Gnd ACPL-W346 130 R0603 1 25V SOD-123 R6 0.1uF C0603 C6 ZD6 Input_HS_RTN Input_LS 5V1 ZD5 5V1 SOD-123 C22 25V SOD-123 5R1 R1206 4 SOD-123 D2 C2 1uF C1206 VCC_RTN R2 Circuit in this area, the ground is isolated. 5V1 ZD1 24V SOD-123 5V1 SOD-123 R3 D1 C24 C1 10k R1206 SOD-123 C4D20120D TO-247 TP9 JM1 1nF C1206 GND Id VS_LS GND 1 CON5 CON2 GND GND PCB Ver.: A BOM Ver.: A Title Size Main board - Avago Document Number Rev A4 SiC MOSFET EVL Board (CRD 8FF1217P-1) Date:Sunday, KIT8020-CRD-8FF1217P-1_UM Rev A User Manual CON3 220pF C1210 VS_LS 5R1 R1206 R26 10R R4524 1 ZD3 -VEE_LS Input_LS_RTN 14 TO-247 Q1 TP1 Vg_LS 1N5819HW ZD2 C12 4.7uF C1206 TP3 V_Ig_LS2 R1 5 0.1uF C0603 1nF C1206 MID-PT -VEE_LS C3 C4 C4D20120D 220pF C1210 TP6 Vd_LS V_Ig_LS1 ZD8 R8 10k R1206 D3 TO-247 1 TP2 1uF BEAD C23 VS_HS 1k R0603 1uF BD1 VS_HS R25 10R R4524 SOD-123 1k R24 C5 C0603 6 24V SOD-123 C1206 R9 R1206 +22V_VCC_LS C0603 7 5 1uF Vg_HS R1206 ZD4 C11 4.7uF C1206 TO-247 Q2 TP5 5R1 R1206 C10 TP4 Vd_HS D4 1N5819HW R7 5R1 4 6 SOD-123 TP8 V_Ig_HS2 VCC CHOKE CM Input_HS V_Ig_HS1 5 G1212S-2W R5 TP7 ZD7 -VEE_mid_HS 5R1 R0603 Input_LS 1k R0603 1M R1206 1M R1206 GND 6 R14 VCC 1uF -VEE_mid_HS ACPL-W346 130 R0603 C21 C0603 G1212S-2W R11 1uF R21 R22 1k R1206 R23 1M R1206 2 COM 2 6 R12 C16 HVDC R20 R19 1M R1206 1 2.2uF C0603 +22V_VCC_HS C0603 7 R18 1M R1206 2 C15 C14 0.1uF C0603 VCC_RTN +Vout R17 1M R1206 1 U4 +Vin 5uF 3 1 5R1 R0603 C20 0.1uF SiC MOSFET R15 C19 10nF SiC MOSFET 5R1 R0603 VCC C18 10nF 3 R16 C17 CON1 September 21, 2014 Sheet 1 of 1v0 1 Component list of CRD-8FF1217P-1 Part Ref. BD1 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 Value Part number Brand Bead 1nF 1uF 0.1uF 1nF 1uF 1uF 2.2uF 0.1uF 33pF 0.1uF 4.7uF 4.7uF 33pF 0.1uF 2.2uF 1uF 10nF 74270011 Wurth B32653A1103K 19 C18 10nF B32653A1103K 20 C19 0.1uF B32654A1104K 21 22 23 24 C20 C21 C22 C23 5uF 1uF 1uF 220pF B32774D1505K 25 26 27 28 C24 CON1 CON2 CON3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 220pF HVDC GND MID-PT Gate 29 CON4 Driver input 30 CON5 GND 31 D1 32 D2 33 D3 34 D4 35 JM1 36 L1 37 Q1 38 39 40 41 42 43 44 45 46 47 48 49 50 51 Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 15 Id CM CHOKE SiC MOSFET SiC MOSFET 5R1 5R1 10k 130 240 5R1 5R1 10k 1k 130 240 1k 5R1 Description Type PCB 7808 7808 7808 ferrite bead Ceramic, C0G, 10% Ceramic, X7R, 10% Ceramic, X7R, 10% Ceramic, C0G, 10% Ceramic, C0G, 10% Ceramic, X7R, 10% Ceramic, X7R, 10% Ceramic, X7R, 10% Ceramic, C0G, 10% Ceramic, X7R, 10% Ceramic, X7R, 10% Ceramic, X7R, 10% Ceramic, C0G, 10% Ceramic, X7R, 10% Ceramic, X7R, 10% Ceramic, X7R, 10% CAP FILM 10nF 1.6KVDC EPCOS RADIAL, PP CAP FILM 10nF 1.6KVDC EPCOS RADIAL, PP CAP FILM 0.1UF 1.6KVDC EPCOS RADIAL, PP CAP FILM 5UF 1.3KVDC EPCOS RADIAL, PP Ceramic, X7R, 10% Ceramic, X7R, 10% CAP CER 220PF 2KV 5% NP0 Kemet 1210 CAP CER 220PF 2KV 5% NP0 Kemet 1210 Skystone female, M5, 30A, 6P Skystone female, M5, 30A, 6P Skystone female, M5, 30A, 6P 22-27-2101 Molex 10pin, 2.54mm, male 7808 C4D20120D 1N5819HW-7-F C4D20120D 1N5819HW-7-F Skystone CREE Diodes CREE Diodes TDK female, M5, 30A, 6P 1200V, 20A DIODE SCHOTTKY 40V 1A SOD123 1200V, 20A DIODE SCHOTTKY 40V 1A SOD123 dim. 1.75mm jumper wire x2 for Id connect to GND CM choke CREE 25-mΩ, 1200-V, SiC MOSFET THR TO-247 CREE 25-mΩ, 1200-V, SiC MOSFET Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% TO-247 R1206 R1206 R1206 R0603 R0603 R1206 R1206 R1206 R1206 R0603 R0603 R1206 R0603 ACM4520-1422P-T000 C2M0025120D C2M0025120D KIT8020-CRD-8FF1217P-1_UM Rev A User Manual THR SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD THR C1206 C1206 C0603 C1206 C0603 C1206 C0603 C0603 C0603 C0603 C1206 C1206 C0603 C0603 C0603 C0603 THR THR THR SMD C0603 SMD C0603 SMD C1210 SMD C1210 THR SMD THR SMD TO-247 SOD-123 TO-247 SOD-123 SMD THR SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD 52 53 54 55 56 57 58 59 60 61 62 R14 R15 R16 R17 R18 R19 R20 R21 R22 R23 R24 5R1 5R1 5R1 1M 1M 1M 1M 1M 1M 1k 1k 63 R25 10R S4-10RF1 Riedon 64 R26 10R S4-10RF1 Riedon 65 66 67 68 69 70 71 72 73 74 75 76 Vg_LS V_Ig_LS1 V_Ig_LS2 Vd_HS Vg_HS Vd_LS V_Ig_HS1 V_Ig_HS2 GND HV_VCC 546-4027 5020 5020 546-4027 546-4027 546-4027 5020 5020 5020 5020 ACPL-W346-060E ACPL-W346-060E RS keystone keystone RS RS RS keystone keystone keystone keystone Avago Avago G1212S-2W Mornsun THR G1212S-2W Mornsun THR TP1 TP2 TP3 TP4 TP5 TP6 TP7 TP8 TP9 TP10 U1 U2 77 U3 78 U4 79 80 81 82 83 84 85 86 16 ZD1 ZD2 ZD3 ZD4 ZD5 ZD6 ZD7 ZD8 G1212S2W G1212S2W 24V 5.1V 5.1V 24V 5.1V 5.1V 25V 25V KIT8020-CRD-8FF1217P-1_UM Rev A User Manual Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% Res, 1% RES 10 OHM 2W 1% WW SMD RES 10 OHM 2W 1% WW SMD BNC socket, female round, 1pin, test point round, 1pin, test point BNC socket, female BNC socket, female BNC socket, female round, 1pin, test point round, 1pin, test point round, 1pin, test point round, 1pin, test point 24V, 350mW, 1% 5.1V, 350mW, 1% 5.1V, 350mW, 1% 24V, 350mW, 1% 5.1V, 350mW, 1% 5.1V, 350mW, 1% 25V, 350mW, 2% 25V, 350mW, 2% SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD R0603 R0603 R0603 R1206 R1206 R1206 R1206 R1206 R1206 R0603 R0603 SMD R4524 SMD R4524 MECH MECH MECH MECH SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SOD-123 SOD-123 SOD-123 SOD-123 SOD-123 SOD-123 SOD-123 SOD-123 Schematic of CRD-8FF1217P-2 +22V_VCC C1206 -VEE_LS C5 R0603 33pF Gate signal: DC 5V Max. R20 R0603 R22 VCC_RTN 2 C11 C10 3 C1206 C0603 4 4.7uF 1k R0603 0.1uF SOD-123 5 ZD8 5V1 7 * DISABLE 8 C14 0.1uF C0603 R15 R14 R0603 R0603 10k 47k L1 Gate Driver input VDDI1 GNDA GNDI NC3 DT VDDB NC VOB VDDI2 GNDB 13 11 R16 10 9 1M R1206 TP4 Vd_HS TP5 Vg_HS R29 R7 5R1 R1206 R1206 ZD4 5V1 SOD-123 24V SOD-123 ZD5 Q2 BD1 R8 10k R1206 C4 BEAD TO-247 10R R4524 2W D3 C4D20120D C23 220pF C1210 2kV C1206 5R1 R1206 R1206 ZD3 TP3 TP2 V_Ig_LS1 5V1 SOD-123 MID-PT TP6 Vd_LS R17 5R1 SOD-123 V_Ig_LS2 D2 Q1 TP1 Vg_LS 1N5819HW R1 R2 5R1 5R1 R1206 R1206 ZD1 24V SOD-123 ZD2 TO-247 -VEE_LS R3 10k R1206 5V1 SOD-123 R30 10R R4524 2W D1 C4D20120D C24 Input_LS TO-247 220pF C1210 2kV C1 TP9 1nF JM1 C1206 GND Id 1 1 -VEE_LS GND CON2 GND CON5 GND PCB Ver.: A VCC_RTN DISABLE CON3 1 -VEE_HS_mid C2 1uF 5V_VCC Input_HS TO-247 1nF C1206 +22V_VCC C0603 1M R1206 R27 D4 5R1 ZD6 +22V_VCC 12 C1206 0.1uF 1M R1206 1M R1206 1N5819HW R6 14 C12 C13 1M R1206 R26 5V1 SOD-123 SOIC16W +22V_VCC_RTN 1M R1206 -VEE_HS_mid 1uF C1206 C1206 4 3 TP8 V_Ig_HS2 15 Si8233 Circuit in this area, the grounding is isolated. 17 VOA 16 1uF CHOKE CM 1 2 3 4 5 6 7 8 9 10 VDDA VIB 2.2uF VCC_RTN 2 CON4 VIA DISABLE NC2 6 VCC_RTN 1 C7 U1 5R1 R0603 C6 D5 DPAK 1 SOD-123 TP7 C4D02120E 5R1 R0603 R19 5uF V_Ig_HS1 47k C0603 0.1uF R25 -VEE_HS_mid R1206 R4 33pF 10nF R24 R28 R13 VCC_RTN R0603 5V_VCC +22V_VCC R0603 C3 10nF R23 GND 5R1 330 C18 5R1 R1206 47k C0603 R5 * Input_LS R18 R9 C17 R1206 R1206 330 HV_VCC R0603 C16 NC 0R R10 1k C15 R11 R12 * Input_HS TP10 2 C0603 +22V_VCC_RTN HVDC R21 25V SOD-123 1 C1206 ZD7 2u2 3 C9 2 C8 0.1uF 1 2u2 3 C0603 C20 SiC MOSFET 0.1uF SiC MOSFET C19 CON1 1 +22V_VCC * Note: Si8233 Input / ouput: Input_HS (CON4.7): HS PWM signal (5V max.) Input_LS (CON4.8): LS PWM signal (5V max.) DISABLE (CON4.9): 5V = disable, 0V = enable KIT8020-CRD-8FF1217P-1_UM Rev A User Manual Title BOM Ver.: A Main board - Si lab Size Document Number Rev A4 SiC MOSFET EVL Board (CRD 8FF1217P-2) Date: Sunday, September 21, 2014 Sheet 1 of 1v0 1 Component list of CRD-8FF1217P-2 1 Part Ref. BD1 Bead Ferrite bead THR 2 C1 1nF Ceramic, C0G, 10% SMD C1206 3 C2 1uF Ceramic, X7R, 10% SMD C1206 4 C3 33pF Ceramic, C0G, 10% SMD C0603 5 C4 1nF Ceramic, C0G, 10% SMD C1206 6 C5 33pF Ceramic, C0G, 10% SMD C0603 7 C6 1uF Ceramic, X7R, 10% SMD C1206 8 C7 2.2uF Ceramic, X7R, 10% SMD C1206 9 C8 0.1uF Ceramic, X7R, 10% SMD C0603 10 C9 2.2uF Ceramic, X7R, 10% SMD C1206 11 C10 0.1uF Ceramic, X7R, 10% SMD C0603 12 C11 4.7uF Ceramic, X7R, 10% SMD C1206 13 C12 1uF Ceramic, X7R, 10% SMD C1206 14 C13 0.1uF Ceramic, X7R, 10% SMD C0603 15 C14 0.1uF Ceramic, X7R, 10% SMD C0603 16 C15 10nF B32653A1103K EPCOS CAP FILM 10nF 1.6KVDC RADIAL, PP THR 17 C16 10nF B32653A1103K EPCOS CAP FILM 10nF 1.6KVDC RADIAL, PP THR 18 C17 0.1uF B32654A1104K EPCOS CAP FILM 0.1UF 1.6KVDC RADIAL, PP THR 19 C18 5uF B32774D1505K EPCOS CAP FILM 5UF 1.3KVDC RADIAL, PP THR 20 C19 0.1uF Ceramic, X7R, 10% SMD C0603 21 C20 2.2uF Ceramic, X7R, 10% SMD C1206 22 C23 220pF C1210C221JGGACTU Kemet CAP CER 220PF 2KV 5% NP0 1210 SMD C1210 23 C24 220pF C1210C221JGGACTU Kemet CAP CER 220PF 2KV 5% NP0 1210 SMD C1210 24 CON1 HVDC 7808 Skystone female, M5, 30A, 6P MECH 25 CON2 GND 7808 Skystone female, M5, 30A, 6P MECH 26 CON3 7808 Skystone female, M5, 30A, 6P MECH 27 CON4 MID-PT Gate input 22-27-2101 Molex 10pin, 2.54mm, male MECH 28 CON5 GND 7808 Skystone female, M5, 30A, 6P MECH 29 D1 C4D20120D C4D20120D CREE 1200V, 20A THR TO-247 30 D2 1N5819HW 1N5819HW-7-F Diodes DIODE SCHOTTKY 40V 1A SOD123 SMD SOD-123 31 D3 C4D20120D C4D20120D CREE 1200V, 20A THR TO-247 32 D4 1N5819HW 1N5819HW-7-F Diodes DIODE SCHOTTKY 40V 1A SOD123 SMD SOD-123 33 D5 C4D02120E C4D02120E CREE DPAK 34 JM1 Id 35 L1 CM CHOKE ACM4520-142-2P-T000 TDK 1200V, 2A SMD dim. 1.75mm jumper wire x2 for Id connect MECH to GND CM choke SMD 36 Q1 SiC MOSFET C2M0025120D CREE 25-mΩ, 1200-V, SiC MOSFET THR TO-247 37 Q2 SiC MOSFET C2M0025120D CREE 25-mΩ, 1200-V, SiC MOSFET THR TO-247 38 R1 5R1 Res, 1% SMD 39 R2 5R1 Res, 1% SMD R1206 40 R3 10k Res, 1% SMD R1206 41 R4 47k Res, 1% SMD R0603 42 R5 330 Res, 1% SMD R0603 43 R6 5R1 Res, 1% SMD R1206 44 R7 5R1 Res, 1% SMD R1206 45 R8 10k Res, 1% SMD R1206 46 R9 47k Res, 1% SMD R0603 47 R10 330 Res, 1% SMD R0603 18 Value Part number 74270011 Driver Brand Wurth KIT8020-CRD-8FF1217P-1_UM Rev A User Manual Description Type PCB Footprint R1206 48 R11 NC SMD R1206 49 R12 0R Res, 1% SMD R1206 50 R13 5R1 Res, 1% SMD R1206 51 R14 47k Res, 1% SMD R0603 52 R15 10k Res, 1% SMD R0603 53 R16 5R1 Res, 1% SMD R1206 54 R17 5R1 Res, 1% SMD R1206 55 R18 5R1 Res, 1% SMD R1206 56 R19 5R1 Res, 1% SMD 57 R20 5R1 Res, 1% SMD R0603 58 R21 1k Res, 1% SMD R0603 59 R22 1k Res, 1% SMD R0603 60 R23 1M Res, 1% SMD R1206 61 R24 1M Res, 1% SMD R1206 62 R25 1M Res, 1% SMD R1206 63 R26 1M Res, 1% SMD R1206 64 R27 1M Res, 1% SMD R1206 65 R28 1M Res, 1% SMD R1206 66 R29 10R S4-10RF1 Riedon RES 10 OHM 2W 1% WW SMD SMD R4524 67 R30 10R S4-10RF1 Riedon RES 10 OHM 2W 1% WW SMD SMD R4524 68 TP1 Vd_HS 546-4027 RS BNC socket, female MECH 69 TP2 V_Ig_LS2 5020 keystone round, 1pin, test point MECH 70 TP3 V_Ig_LS1 5020 keystone round, 1pin, test point MECH 71 TP4 Vd_HS 546-4027 RS BNC socket, female MECH 72 TP5 Vg_HS 546-4027 RS BNC socket, female MECH 73 TP6 Vd_LS 546-4027 RS BNC socket, female MECH 74 TP7 V_Ig_HS1 5020 keystone round, 1pin, test point MECH 75 TP8 V_Ig_HS2 5020 keystone round, 1pin, test point MECH 76 TP9 GND 5020 keystone round, 1pin, test point MECH 77 TP10 HV_VCC 5020 keystone round, 1pin, test point MECH 78 U1 Si8233 Si8233BD-C-IS SiLabs SMD SOIC16W 79 ZD1 24V 24V, 350mW, 1% SMD SOD-123 80 ZD2 5.1V 5.1V, 350mW, 1% SMD SOD-123 81 ZD3 5.1V 5.1V, 350mW, 1% SMD SOD-123 82 ZD4 24V 24V, 350mW, 1% SMD SOD-123 83 ZD5 5.1V 5.1V, 350mW, 1% SMD SOD-123 84 ZD6 5.1V 5.1V, 350mW, 1% SMD SOD-123 85 ZD7 25V 25V, 350mW, 2% SMD SOD-123 86 ZD8 5.1V 5.1V, 350mW, 1% SMD SOD-123 Additional component list for the example testing in section 6 QTY 1 Part number 820303B04724G Brand Aavid 4 4 4 4 4 AOS 218 247 1 Fischer elektronik SDN-414-01 T&M Research 4 1 19 Description heat sink, 120mm x 123mm (Need drill hole for mounting) Nylon tube, M4, 15mm, for PCB board stand at 4 corner Screw, Phillips head, M3x21mm, for PCB board stand at 4 corner Comments Heat sink for whole PCB board M3 washer Screw, Phillips head, M3x10mm, for TOFor SiC device assembly 247 mounting Aluminum oxide insulator pad with screw hole, TO 247, 25 x 21 x 1.5 mm Insulating Shoulder Washers, M3, Nylon66, for TO-247 mounting Shunt resistor for current Id 0.01ohm current viewing resistor measurement KIT8020-CRD-8FF1217P-1_UM Rev A User Manual Heat sink hole drilling diagram for the example testing in Section 6 4.0mm. 120.0mm. 114.0mm. 6.0mm. Total 8 holes, all hole is ØM3, And the depth is 4mm 113.0mm. 75.2mm. 17.6mm. 5.0mm 64.0mm. 17.5mm. 27.3mm. 44.8mm. 75.1mm. 6.0mm. 0.0 orgin 20 27.3mm. KIT8020-CRD-8FF1217P-1_UM Rev A User Manual 114.0mm. 120.0mm.