Cree MOSFET Evaluation Kit User`s Manual KIT8020

KIT8020-CRD-8FF1217P-1
CREE MOSFET Evaluation Kit
User’s Manual
REV A
CREE Power Applications
10/31/2014
This document is prepared as a user reference guide to install and operate CREE evaluation hardware.
Safety Note: Cree designed evaluation hardware is meant to be an evaluation tool in a lab setting for Cree components and
to be handled and operated by highly qualified technicians or engineers. The hardware is not designed to meet any particular
safety standards and the tool is not a production qualified assembly. Subject to change without notice.
www.cree.com
1
1. Introduction
This Evaluation (EVL) Board (model number CRD-8FF1217P-1/2) is to demonstrate the high performance of CREE
1200V SiC MOSFET and SiC Schottky diodes (SBD) with standard TO-247 package. It can be easily configured for several
topologies from the basic phase-leg configuration. This EVL board can be used for the following purposes:
• Evaluate the SiC MOSFET performance during switching events and steady state operation.
• Easily configure different topologies with SiC MOSFET and SiC diodes
• Functional testing with SiC MOSFET, for example, double pulse test to measure switching losses (Eon and Eoff ).
• PCB layout example for driving SiC MOSFET and SiC diode.
• Gate drive reference design for a TO-247 SiC MOSFET.
This user manual will include information on the EVL board architecture, hardware configuration, Cree SiC power devices
and an example application when using this board.
Please note that JM1 as shown in Figure 1 is open circuit. It is
necessary to short this with a wire or insert a shunt as shown in
section 6.2 to complete the circuit before operation.
2. Board Overview
The EVL board’s general block diagram is shown in Figure 1. There is a phase-leg which can include two SiC MOSFETs
(Q1 and Q2) with half bridge phase-leg configuration and two anti-parallel SiC Schottky diodes (D1 and D3) with Q1
and Q2. The gate drive block with electrical isolation is designed on the board to drive SiC MOSFET Q1 and Q2. There are
four power trace connectors (CON1, CON2, CON3 and CON5) and one 10 pin signal/supply voltage connector (CON4)
on board.
Figure 1: General block diagram of Cree Discrete SiC EVL board
There are two versions of this EVL board. The first version with model number CRD-8FF1217P-1 includes two 2.5A gate
driver integrating opto-coupler from Avago ACPL-W346 and two 2W isolation DC/DC converters from Mornsun G1212S2W for both high side and low side individually. The 2W DC/DC converter with +12V Vcc input generates +24V Vcc_out
output voltage with 6KVDC isolation that is supplying voltage to W346 on a push-pull gate drive of the secondary side
as shown in Figure 2. In this circuit a 5V zener in parallel with 1uF capacitor is used to generate -5V Vgs voltage for the
SiC MOSFET, where turn-off and turn-on Vgs voltage is equal to 24V-5V=19V. Note that a SiC MOSFET can be turned off
with zero voltage, and the -5V turn-off voltage helps with faster turn-off and lower turn-off losses. It also improves dv/
dt inducted self turn-on and noise immunity during transient periods with more headroom from Vgs turn-on threshold
voltage. The first version can implement any PWM signal to drive the SiC phase leg block, if the board is operating in
synchronous mode with a high side MOSFET and a low side MOSFET, the input signals must have additional dead time
to avoid shoot through.
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KIT8020-CRD-8FF1217P-1_UM Rev A
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Vcc
DC/DC
Vcc_out
CON1
ACPL-W346
HS_I/P
Vg_HS
Vs_LS
VCC, Input PWM Signal,
Enable
CON4
Vcc
DC/DC
Vcc_out
5V
SiC
Phase-leg
block
CON3
ACPL-W346
LS_I/P
Vg_LS
Vs_LS
5V
CRD8FF1217P-1
CON2
CON5
Figure 2. CRD-8FF1217P-1 Block diagram with ACPL-W346
The second version with model number CRD-8FF1217P-2 includes a single isolated high side and low side driver from
Silicon Labs Si8233 to drive both high side and low side MOSFETs together as shown in Figure 3. The Vcc with 5V input
to Si8233 is a supply voltage for logic on the primary side, and +22V_Vcc with +22V input is supply voltage for a pushpull driver on secondary side. The driver IC has two independent sink/sources with 5KVrms withstand voltage. The +22V
voltage is to directly supply VDD to low side drive for Vg_LS, while for high side supply voltage, a bootstrap drive circuit
is used to supply Vcc on the high side. Figure 4 shows the bootstrap drive circuit. When Q1 is turned on and SW is pulled
down to the ground, the bootstrap capacitor, C7, charges through the bootstrap diode D5 from the VDD (+22V_Vcc)
power supply as shown by the red dashed line. This is provided by VDDA when SW is pulled to a higher voltage by high
side switch Q2, the VDDA supply floats and the bootstrap diode reverses bias and blocks the rail voltage and supply high
side drive shown as blue dashed line. The bootstrap diode D5 must withstand high blocking voltage with low reverse
recovery current to minimize noise. In this board, a Cree 1200V SiC Schottky diode C4D02120E is used. Also, a 5V zener
with 1uF is in series with a Vg trace on both the high side and low side, which can generate -5V Vgs voltage for SiC MOSFET
turn-off. The bootstrap circuit has the advantage of being simple and low cost, but has some limitations. Duty-cycle and
on-time is limited by the need to refresh the charge in the bootstrap capacitor, which limits the topology application
for this second version of the EVL board when duty cycle is variable. However, it can work well on most topologies
with fixed duty cycle, such as phase shift full-bridge or LLC resonant converter. The Si8233 has an integrated dead time
function with a resistor to ground used to set. So, the input signals do not need additional dead time on this version.
+22V_Vcc
HS_I/P
VCC, Input PWM Signal,
Enable
SiC
Phase-leg
block
5V
Vg_HS
Vs_LS
CON4
Vcc
5V
Disable
CON3
Vg_LS
Vs_LS
LS_I/P
CRD8FF1217P-2
Figure 3. CRD-8FF1217P-2 Block diagram with Si8233
3
CON1
KIT8020-CRD-8FF1217P-1_UM Rev A
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CON2
CON5
Vin
D5
VDD
VDDA
VOA
GNDA
C7
Q2
Si8233
VOB
GNDB
SW
Q1
Figure 4. Simplified bootstrap drive circuit on CRD-8FF1217P-2 version
The EVL board size is 124mmx120mmx40mm (not including heatsink). Different types of heatsinks can
be assembled depending on your cooling requirements. Figure 5A shows the board attached with a
120mmx120mmx45mm heatsink on the bottom of PCB board as an example. SiC devices are horizontal with
the PCB board, however, users can choose any type of heatsink that works with the standard TO-247 package.
Figure 5b gives another example for a vertical heatsink attachment with PCB board and SiC power devices.
Figure 5a. Cree EVL board assembly (-1 is shown on left). See Appendix for assembly parts information.
Figure 5b. Cree EVL board picture with a vertical heatsink for TO-247 package
3. Configurations
The EVL board can be adaptable to implement difference topologies when using the different configurations of SiC
MOSFETs and SiC diodes. It is possible to test several topologies with this board: synchronous Buck, non-synchronous Buck
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KIT8020-CRD-8FF1217P-1_UM Rev A
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(or high-side Buck), synchronous Boost, non-synchronous Boost, half phase-leg bridge converter, H bridge converter (2x
EVL boards) and bi-directional buck-boost converters.Table 1 summarizes the possible topologies that can be implemented
using this EVL board. For the phase-leg configuration, it can either use discrete anti-parallel SiC SBD or body diode of SiC
MOSFET, thus the body diode of SiC MOSFET can be evaluated without anti-parallel diode with option one in the below table.
With double EVL boards, H-bridge converter and bi-directional DC/DC converter can be configured. For H-bridge with
different control architecture, the phase shift full bridge, resonant LLC ZVS converter and single phase DC/ AC converter
can all be achieved. For bi-directional DC/DC converter, it can achieve either Buck from port 1 to port 2 or Boost from
port2 to port 1. Furthermore, with three EVL boards, it can even be set up as a three-phase DC/AC inverter for some
motor drive or inverter applications.
Table. 1 The EVL board topology configuration
Option One:
Syn. Buck converter
or Phase-leg bridge
topology without antiparallel diodes
•
CON1
•
•
Q2
CON3
L
Cout
Cin
HVDC
RL
Q1
CON2
CON5
Option Two:
Phase-leg bridge
topology with antiparallel SiC SBD
•
CON1
Q2
•
•
D3
CON3
Q1
•
•
•
CON1
Q2
CON3
•
•
•
L
Cout
D1
Cin
RL
•
•
CON1
Q2
•
•
•
CON3 L
Cin
Q1
CON2
CON5
KIT8020-CRD-8FF1217P-1_UM Rev A
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Step down voltage
Connect inductor L with
CON3 as output
CON1: INPUT
CON3: OUTPUT
CON2, CON5: GND
HVDC
CON2
CON5
Option Four:
Syn. Boost converter
Phase-leg, switching with
external anti-parallel
diode
SiC SBD used
CON1, CON3: Input/
output depends on which
topology apply to board
CON2, CON5: GND
D1
CON2
CON5
Option Three:
Non-syn Buck converter
5
•
•
•
Step down voltage or
phase leg topology w/o
anti-parallel diodes
SiC Body diode used
Connect inductor L with
CON3 as output
CON1: INPUT
CON3: OUTPUT
CON2, CON5: GND
Cout
HVDC
RL
Step up voltage
Connect inductor L with
CON3 as input
CON1: OUTPUT
CON3: INPUT
CON2, CON5: GND
Option Five:
Non-syn Boost converter
•
•
CON1
•
•
•
D3
CON3 L
Cin
Q1
Cout
RL
HVDC
CON2
CON5
Option Six:
Diode bridge
Step up voltage
Connect inductor L with
CON3 as input
CON1: OUTPUT
CON3: INPUT
CON2, CcON5: GND
CON1
•
•
•
•
Bridge diode with SiC SBD
CON1: OUTPUT (Positive)
CON3: INPUT
CON2, CON5: OUTPUT
(Negative)
•
Full bridge converter with
Phase shift or resonant
single phase DC/AC
inverter
D3
CON3
D1
CON2
CON5
Option Seven:
H bridge topology
configuration using two
EVL boards
EVL1
CON1
•
Q2
Cin
L
CON3
Cout
HVDC
RL
Q1
CON2
CON5
EVL2
CON1
Q2
CON3
Q1
CON2
CON5
Option Eight:
Bi-directional DC/DC
converter
Port1
EVL1
Q2
•
CON1
CON1
CON3
CON3
Q1
KIT8020-CRD-8FF1217P-1_UM Rev A
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•
C2
Q1
CON2
CON5
Port2
Q2
L
C1
6
EVL2
CON2
CON5
Port 1 is input and port
2 is output with Buck
converter, Q2 of EVL2 is
constantly turn-on, and
Q1 of EVL2 is constantly
turn-off
Port 1 is output and port
2 is input with Boost
converter, Q2 of EVL1 is
constantly turn-on and
Q1 of EVL2 is constantly
turn-off
4. Hardware Description
The above figures give top view of the EVL board, the top right is CRD-8FF1217P-1 and the top left is CRD-8FF1217P-2.
The picture highlights key test points and connectors on the boards.
4.1 Test points
To make testing more effective and easy, the BNC connectors are added on the board to measure both Vgs and Vds
waveforms for the SiC MOSFET Q1 and Q2. A current test point with two unpopulated through-hole contacts is available
to measure the drain current through the low side switch. A jumper (JM1) can be inserted to the test point and measure
current using current probe. In addition, coaxial shunts (http://www.tandmresearch.com/) are recommended for
accurate current measurements with less delay time; this can minimize the stray inductance on the switching loops and
achieve accurate switching loss measurement. Also, some test points are added between gate resistors for measuring
the voltage across the gate resistors. Thus it can estimate the gate current Ig to the SiC MOSFET.
4.2 Connectors
For the connectors, CON1, CON2, CON3 and CON5 are power trace connectors, and their definitions are depending
on the different topology as described in Table 1. CON4 is for the signal/logic inputs and supply voltage for ICs. The
definition of CON4 for each pin is shown in Table 2.
Table. 2 Pin definitions for connector CON4
CRD-8FF1217P-1
CRD-8FF1217P-2
N/A
+22V_VCC: +22Vdc
Pin2
Pin3
Pin4
Pin5
Pin6
Pin7
Pin8
N/A
N/A
N/A
VCC: +12Vdc
VCC_RTN: GND for +12Vdc
Input_HS: signal input for Q2
Input_HS_RTN: signal ground for Q2
Pin9
Pin10
Input_LS: signal input for Q1
Input_LS_RTN: signal ground for Q1
+22V_VCC_RTN:GND for +22V
NA
NA
5V_VCC: +5Vdc
VCC_RTN: GND for +5Vdc
Input_HS: signal input for Q2
Disable:
5V = disable (output pull low),
0V = Enable (output = input state)
Input_LS: signal input for Q1
VCC_RTN: GND for +5V
Connector CON4 Pin
Pin1
4.3 Board design
A SiC device is a fast switching device, and it is important to maximize SiC’s high performance and minimize ringing with
fast switching. The EVL board introduces some design approaches to minimize the ringing on the board:
• The gate drive and logic signal are put on top of the PCB board, while the main power trace and switching
devices are put on the bottom layer. There is no crossover or overlap between gate signal and switching power
trace, which can minimize high dv/dt and di/dt noise influence from the switching node to gate signal.
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KIT8020-CRD-8FF1217P-1_UM Rev A
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• Four de-coupling film capacitors with valued 10nF, 10nF, 0.1uF and 5uFare placed close to the SiC devices; it can
reduce high frequency switching loop and bypass noise within switching loop.
• The layout of gate drive circuitry is designed with symmetric trace distance, which can introduce balance
impendence on the gate drive. Also, the gate drive is placed as close as possible to the SiC MOSFETs.
• The power trace layout is optimized to reduce the switching loops.
5. SiC Devices
SiC devices including SiC MOSFET and SiC Schottky diodes are recognized as next generation wide bandgap devices.
It can provide fast switching with less loss compared to conventional Si devices. Cree (www.cree.com/power) is the
world’s leading manufacturer of silicon-carbide Schottky diodes and MOSFETs for efficient power conversion. The
standard TO-247 package 1200V SiC MOSFETs and SiC SBDs are available to order or apply for free samples at Cree
website in order to evaluate SiC power devices with this EVL board. The different on-state resistor Rds(on) MOSFETs
are available from Cree with standard drain to source on-state resistor 25mohm, 40mohm, 80mohm, 160mohm and
280mohm.
6. Example Application and Measurements
6.1 Board Setup
In order to demonstrate the EVL with SiC devices, a synchronous phase-leg Buck converter configuration is used as
an example to evaluate the performance of the SiC EVL board. This is option one configuration on table 1. The table
below gives the electrical parameters. Please note the switching frequency is at 40KHZ in this case due to the design
limitation of the available inductor, but it does not mean the switching frequency is limited to 40KHZ. Because of low
switching losses of SiC MOSFET, the switching frequency can increase to higher without sacrificing much switching
losses when using SiC MOSFET. The purpose of 40KHZ setting is competing with 1200V Si IGBT for inverter application
with this phase-leg configuration, which frequency is normally ranged from 15KHZ to 20KHZ.
In the testing, two 25mohm SiC MOSFETs are assembled on the PCB board with heatsink for both high side Q2 and
low side Q1. The figure gives the test setup with EVL boards. The signal generators are used to generate high side and
low side PWM signals with Input_HS and Input_LS. Note that the dead time period must be applied to the input signal
between Input_HS and Input_LS for CRD-8FF1217P-1. For CRD-8FF1217P-2, the dead time function is integrated into
the drive ICs; at this example, a 450ns dead time is set and there is no need for additional dead time between Input_
HS and Input_LS in CRD-8FF1217P-2.
For CRD-8FF1217P-2, the disable pin 4.8 of CON4 should connect to ground of input +5V DC supply to enable gate
signal to outputs. This disable pin can control the on/off of the board after the input is power up.
Items
Input Voltage
Output Voltage
Output RMS Current
Output Power
Peak MOS current
Switching Frequency
Duty Cycle
Dead time
Inductor
Output Capacitors
8
Table. 3 Electrical parameters
Parameters
600Vdc
300Vdc
30A
9KW
40A
40KHZ
50%
~450ns
400uH
300uF
KIT8020-CRD-8FF1217P-1_UM Rev A
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Cree Discrete SiC EVL Board
CON1
CON4
+12V
DC supply
VCC
VCC_RTN
Input_HS
Input_HS_RTN
PWM signal
generator
Input_LS
Input_LS_RTN
4.5
4.6
400uH
Q2
CON3
4.7
4.8
CON2
4.9
4.10
Gate drive
300uF
Cin
600V
DC source
Cin
600V
DC source
RL
Q1
CRD8FF1217P-1
CON5
+22V
DC supply
Cree Discrete SiC EVL Board
+22V_VCC_IN
+5V
DC supply
+22V_VCC_RTN
VCC
VCC_RTN
Input_HS
PWM signal
generator
Disable
Input_LS
VCC_RTN
CON4
4.1
CON1
4.2
4.5
CON3
4.7
4.8
CON2
4.9
4.10
400uH
Q2
4.6
Gate drive
300uF
RL
Q1
CRD8FF1217P-2
CON5
Figure 7. Test setup for the EVL boards with CRD-8FF1217P-1 and CRD-8FF1217P-2
Figure 8. Bench test setup of the EVL boards
6.2 Measurements
To maximize the accuracy of the measurements when using the EVL board, some suggestions are listed below:
• Use a highly accurate 0.0131ohm shunt (recommend SDN series shunt resistors from T&M Research), to measure
the low side current waveform as shown below in Figure 9. This can help to shorten the current sense loop.
Figure 9. Low side current measurement
• A BNC probe is connected to measure low-side Vgs waveform, a x100 HV probe is used to measure low side Vds
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KIT8020-CRD-8FF1217P-1_UM Rev A
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•
•
•
•
•
•
waveform, and a differential probe is used to measure high-side Vgs waveform. All probes must be placed as
close as possible to reduce incorrect ringing due to probe placement.
Place the power inductor as close as possible to connect at CON3 to reduce the switching node loop area, and a
1uF 1200V film capacitors is connected between the output of inductor and ground connector CON5.
A 12W AC fan is used to cool the heatsink and inductor when measuring waveforms and taking thermal
measurements.
A RC snubber is added on the drain to source to damp high dv/dt ringing on the switching node and slow the
high dv/dt.
A capacitance (1nF) is added between gate to source terminal to shunt the miller current from drain to gate. This
external capacitor will introduce low impedance path for Cdv/dt from miller capacitance effect and reduce the
ringing on the gate pins.
Use of a ferrite bead (FB) on the gate pin of TO-247 MOSFETs will introduce high impedance on the gate path for
MHz high frequency and reduce the Vgs ringing.
Reduce the stray capacitance of inductor with single layer structure.
D
12ohm
1N5819HW
5ohm
FB
G
5ohm
1nF
TO-247
220pF
S
D
12ohm
1N5819HW
FB
5ohm
5ohm
G
1nF
220pF
TO-247
S
Figure 10. Gate drive and RC snubber configuration
6.3Test data
The switching waveforms are shown in the below figures. In the operation of the synchronous Buck converter, the lowside body diode conducts before low-side MOSFET is turned on, thus this low-side MOSFET operates in Zero Voltage
Switching (ZVS) mode and high-side MOSFET operates in hard-switching mode. However, high dv/dt during fast
transient of high-side MOSFET will affect the operational behavior of the low-side MOSFET, and the charge stored in
miller capacitance will be transferred via its gate loop, inducing some spurious gate voltage in this topology. The above
methods mentioned in section 6.2 will help to damp this noise and reduce the ringing on the gate and drain to source.
Note that the incorrect test method itself may also introduce some noises from oscilloscope measurement, but it is
sometimes not a true representation of the actual transient events on the switching devices.
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KIT8020-CRD-8FF1217P-1_UM Rev A
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Figure 11. Vgs, Id and Vds waveforms at 9KW loading
(Ch1: low-side Vds yellow 200v/div); (Ch2: low-side Id blue
100mv/0.0131ohm/div);
(Ch3: low-side Vgs pink 10v/div); (Ch4: high-side Vgs green 10v/div)
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KIT8020-CRD-8FF1217P-1_UM Rev A
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Figure 12. Vgs, Inductor current IL and Vds waveforms at 9KW loading
(Ch1: low-side Vds yellow 200v/div); (Ch2: inductor current IL 10A/div);
(Ch3: low-side Vgs pink 10v/div); (Ch4: high-side Vgs green 10v/div)
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KIT8020-CRD-8FF1217P-1_UM Rev A
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The EVL board’s maximum efficiency in this configuration is around 98.9% at 4KW half load using the Yokogawa WT3000
to measure it. It includes losses from the inductor, switching devices, and capacitors. Considering the high switching
frequency (40kHz) and high duty cycle (50%), the efficiency is high compared to conventional Si IGBT solutions.
Figure 13. Efficiency data for this EVL board
Figure 14 shows the thermal performance for this EVL board at full load 9KW after 30 minutes of continuous operation. The
test condition is at room temperature with open frame and 12W fan cooling the heatsink and inductor. It demonstrates
high performance of SiC MOSFET with low temperature, low losses and high switching frequency.
Figure 14. Thermal photo for this EVL board
7. Reference
1.
2.
3.
4.
5.
13
C2M0025120D datasheet, Cree Inc
C4D20120D datasheet, Cree Inc
‘Performance Evaluations of Hard-Switching Interleaved DC/DC Boost Converter with New Generation Silicon Carbide MOSFETs’
Available in Cree website: http://www.cree.com/Power/Document-Library
‘Design Considerations for Designing with Cree SiC Modules Part 1. Understanding the Effects of Parasitic Inductance’ Available in
Cree website: http://www.cree.com/Power/Document-Library
‘Design Considerations for Designing with Cree SiC Modules Part 2. Understanding the Effects of Parasitic Inductance’ Available in
Cree website: http://www.cree.com/Power/Document-Library
KIT8020-CRD-8FF1217P-1_UM Rev A
User Manual
8. Appendix
Schematic of CRD-8FF1217P-1
TP10
1
HV_VCC
-Vin
-Vout
5
Input_HS
1
240
R0603
R10
Input_HS_RTN
C13
33pF
C0603
2
3
U2
Anode
Vcc
NC
Vout
Cathode Gnd
R13
1
5R1 R0603
U3
+Vin
C7
C8
2.2uF
C0603
0.1uF
C0603
VCC_RTN
+Vout
COM
2
-Vin
-Vout
CON4
1
2
3
4
5
6
7
8
9
10
Gate Driver input
1
240
R0603
R4
Input_LS_RTN
C9
33pF
C0603
2
3
2
L1
4
3
U1
Anode
NC
Vcc
Vout
Cathode Gnd
ACPL-W346
130
R0603
1
25V
SOD-123
R6
0.1uF
C0603
C6
ZD6
Input_HS_RTN
Input_LS
5V1
ZD5
5V1
SOD-123
C22
25V
SOD-123
5R1
R1206
4
SOD-123
D2
C2
1uF
C1206
VCC_RTN
R2
Circuit in
this area,
the ground
is
isolated.
5V1
ZD1
24V
SOD-123
5V1
SOD-123
R3
D1
C24
C1
10k
R1206
SOD-123
C4D20120D
TO-247
TP9
JM1
1nF
C1206
GND
Id
VS_LS
GND
1
CON5
CON2
GND
GND
PCB Ver.: A
BOM Ver.: A
Title
Size
Main board - Avago
Document Number
Rev
A4 SiC MOSFET EVL Board (CRD 8FF1217P-1)
Date:Sunday,
KIT8020-CRD-8FF1217P-1_UM Rev A
User Manual
CON3
220pF
C1210
VS_LS
5R1
R1206
R26
10R
R4524
1
ZD3
-VEE_LS
Input_LS_RTN
14
TO-247
Q1
TP1
Vg_LS
1N5819HW
ZD2
C12
4.7uF
C1206
TP3
V_Ig_LS2
R1
5
0.1uF
C0603
1nF
C1206
MID-PT
-VEE_LS
C3
C4
C4D20120D
220pF
C1210
TP6
Vd_LS
V_Ig_LS1
ZD8
R8
10k
R1206
D3
TO-247
1
TP2
1uF
BEAD
C23
VS_HS
1k
R0603
1uF
BD1
VS_HS
R25
10R
R4524
SOD-123
1k
R24
C5
C0603
6
24V
SOD-123
C1206
R9 R1206
+22V_VCC_LS
C0603
7
5
1uF
Vg_HS
R1206 ZD4
C11
4.7uF
C1206
TO-247
Q2
TP5
5R1
R1206
C10
TP4
Vd_HS
D4
1N5819HW
R7
5R1
4
6
SOD-123
TP8
V_Ig_HS2
VCC
CHOKE CM
Input_HS
V_Ig_HS1
5
G1212S-2W
R5
TP7
ZD7
-VEE_mid_HS
5R1 R0603
Input_LS
1k
R0603
1M
R1206
1M
R1206
GND
6
R14
VCC
1uF
-VEE_mid_HS
ACPL-W346
130
R0603
C21
C0603
G1212S-2W
R11
1uF
R21
R22
1k
R1206
R23
1M
R1206
2
COM
2
6
R12
C16
HVDC
R20
R19
1M
R1206
1
2.2uF
C0603
+22V_VCC_HS
C0603
7
R18
1M
R1206
2
C15
C14
0.1uF
C0603
VCC_RTN
+Vout
R17
1M
R1206
1
U4
+Vin
5uF
3
1
5R1 R0603
C20
0.1uF
SiC MOSFET
R15
C19
10nF
SiC MOSFET
5R1 R0603
VCC
C18
10nF
3
R16
C17
CON1
September 21, 2014
Sheet
1
of
1v0
1
Component list of CRD-8FF1217P-1
Part
Ref.
BD1
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C16
C17
Value
Part number
Brand
Bead
1nF
1uF
0.1uF
1nF
1uF
1uF
2.2uF
0.1uF
33pF
0.1uF
4.7uF
4.7uF
33pF
0.1uF
2.2uF
1uF
10nF
74270011
Wurth
B32653A1103K
19 C18
10nF
B32653A1103K
20 C19
0.1uF
B32654A1104K
21
22
23
24
C20
C21
C22
C23
5uF
1uF
1uF
220pF
B32774D1505K
25
26
27
28
C24
CON1
CON2
CON3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
220pF
HVDC
GND
MID-PT
Gate
29 CON4 Driver
input
30 CON5 GND
31 D1
32 D2
33 D3
34 D4
35 JM1
36 L1
37 Q1
38
39
40
41
42
43
44
45
46
47
48
49
50
51
Q2
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
R11
R12
R13
15
Id
CM
CHOKE
SiC
MOSFET
SiC
MOSFET
5R1
5R1
10k
130
240
5R1
5R1
10k
1k
130
240
1k
5R1
Description
Type PCB
7808
7808
7808
ferrite bead
Ceramic, C0G, 10%
Ceramic, X7R, 10%
Ceramic, X7R, 10%
Ceramic, C0G, 10%
Ceramic, C0G, 10%
Ceramic, X7R, 10%
Ceramic, X7R, 10%
Ceramic, X7R, 10%
Ceramic, C0G, 10%
Ceramic, X7R, 10%
Ceramic, X7R, 10%
Ceramic, X7R, 10%
Ceramic, C0G, 10%
Ceramic, X7R, 10%
Ceramic, X7R, 10%
Ceramic, X7R, 10%
CAP FILM 10nF 1.6KVDC
EPCOS
RADIAL, PP
CAP FILM 10nF 1.6KVDC
EPCOS
RADIAL, PP
CAP FILM 0.1UF 1.6KVDC
EPCOS
RADIAL, PP
CAP FILM 5UF 1.3KVDC
EPCOS
RADIAL, PP
Ceramic, X7R, 10%
Ceramic, X7R, 10%
CAP CER 220PF 2KV 5% NP0
Kemet
1210
CAP CER 220PF 2KV 5% NP0
Kemet
1210
Skystone female, M5, 30A, 6P
Skystone female, M5, 30A, 6P
Skystone female, M5, 30A, 6P
22-27-2101
Molex
10pin, 2.54mm, male
7808
C4D20120D
1N5819HW-7-F
C4D20120D
1N5819HW-7-F
Skystone
CREE
Diodes
CREE
Diodes
TDK
female, M5, 30A, 6P
1200V, 20A
DIODE SCHOTTKY 40V 1A
SOD123
1200V, 20A
DIODE SCHOTTKY 40V 1A
SOD123
dim. 1.75mm jumper wire x2
for Id connect to GND
CM choke
CREE
25-mΩ, 1200-V, SiC MOSFET THR
TO-247
CREE
25-mΩ, 1200-V, SiC MOSFET
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
TO-247
R1206
R1206
R1206
R0603
R0603
R1206
R1206
R1206
R1206
R0603
R0603
R1206
R0603
ACM4520-1422P-T000
C2M0025120D
C2M0025120D
KIT8020-CRD-8FF1217P-1_UM Rev A
User Manual
THR
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
THR
C1206
C1206
C0603
C1206
C0603
C1206
C0603
C0603
C0603
C0603
C1206
C1206
C0603
C0603
C0603
C0603
THR
THR
THR
SMD C0603
SMD C0603
SMD C1210
SMD C1210
THR
SMD
THR
SMD
TO-247
SOD-123
TO-247
SOD-123
SMD
THR
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
52
53
54
55
56
57
58
59
60
61
62
R14
R15
R16
R17
R18
R19
R20
R21
R22
R23
R24
5R1
5R1
5R1
1M
1M
1M
1M
1M
1M
1k
1k
63 R25
10R
S4-10RF1
Riedon
64 R26
10R
S4-10RF1
Riedon
65
66
67
68
69
70
71
72
73
74
75
76
Vg_LS
V_Ig_LS1
V_Ig_LS2
Vd_HS
Vg_HS
Vd_LS
V_Ig_HS1
V_Ig_HS2
GND
HV_VCC
546-4027
5020
5020
546-4027
546-4027
546-4027
5020
5020
5020
5020
ACPL-W346-060E
ACPL-W346-060E
RS
keystone
keystone
RS
RS
RS
keystone
keystone
keystone
keystone
Avago
Avago
G1212S-2W
Mornsun
THR
G1212S-2W
Mornsun
THR
TP1
TP2
TP3
TP4
TP5
TP6
TP7
TP8
TP9
TP10
U1
U2
77 U3
78 U4
79
80
81
82
83
84
85
86
16
ZD1
ZD2
ZD3
ZD4
ZD5
ZD6
ZD7
ZD8
G1212S2W
G1212S2W
24V
5.1V
5.1V
24V
5.1V
5.1V
25V
25V
KIT8020-CRD-8FF1217P-1_UM Rev A
User Manual
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
Res, 1%
RES 10 OHM 2W 1% WW
SMD
RES 10 OHM 2W 1% WW
SMD
BNC socket, female
round, 1pin, test point
round, 1pin, test point
BNC socket, female
BNC socket, female
BNC socket, female
round, 1pin, test point
round, 1pin, test point
round, 1pin, test point
round, 1pin, test point
24V, 350mW, 1%
5.1V, 350mW, 1%
5.1V, 350mW, 1%
24V, 350mW, 1%
5.1V, 350mW, 1%
5.1V, 350mW, 1%
25V, 350mW, 2%
25V, 350mW, 2%
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
R0603
R0603
R0603
R1206
R1206
R1206
R1206
R1206
R1206
R0603
R0603
SMD R4524
SMD R4524
MECH
MECH
MECH
MECH
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SMD
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
Schematic of CRD-8FF1217P-2
+22V_VCC
C1206
-VEE_LS
C5
R0603
33pF
Gate signal:
DC 5V Max.
R20
R0603
R22
VCC_RTN
2
C11
C10
3
C1206
C0603
4
4.7uF
1k
R0603
0.1uF
SOD-123
5
ZD8
5V1
7
* DISABLE
8
C14
0.1uF
C0603
R15
R14
R0603
R0603
10k
47k
L1
Gate Driver input
VDDI1
GNDA
GNDI
NC3
DT
VDDB
NC
VOB
VDDI2
GNDB
13
11
R16
10
9
1M
R1206
TP4
Vd_HS
TP5
Vg_HS
R29
R7
5R1
R1206
R1206
ZD4
5V1 SOD-123
24V
SOD-123
ZD5
Q2
BD1
R8
10k
R1206
C4
BEAD TO-247
10R
R4524
2W
D3
C4D20120D
C23
220pF
C1210
2kV
C1206
5R1
R1206
R1206
ZD3
TP3
TP2
V_Ig_LS1
5V1 SOD-123
MID-PT
TP6
Vd_LS
R17
5R1
SOD-123
V_Ig_LS2
D2
Q1
TP1
Vg_LS
1N5819HW
R1
R2
5R1
5R1
R1206
R1206
ZD1
24V
SOD-123
ZD2
TO-247
-VEE_LS
R3
10k
R1206
5V1
SOD-123
R30
10R
R4524
2W
D1
C4D20120D
C24
Input_LS
TO-247
220pF
C1210
2kV
C1
TP9
1nF
JM1
C1206
GND
Id
1
1
-VEE_LS
GND
CON2
GND
CON5
GND
PCB Ver.: A
VCC_RTN
DISABLE
CON3
1
-VEE_HS_mid
C2 1uF
5V_VCC
Input_HS
TO-247
1nF
C1206
+22V_VCC
C0603
1M
R1206
R27
D4
5R1
ZD6
+22V_VCC
12
C1206
0.1uF
1M
R1206
1M
R1206
1N5819HW
R6
14
C12
C13
1M
R1206
R26
5V1
SOD-123
SOIC16W
+22V_VCC_RTN
1M
R1206
-VEE_HS_mid
1uF
C1206
C1206
4
3
TP8
V_Ig_HS2
15
Si8233
Circuit in this area, the
grounding is isolated.
17
VOA
16
1uF
CHOKE CM
1
2
3
4
5
6
7
8
9
10
VDDA
VIB
2.2uF
VCC_RTN
2
CON4
VIA
DISABLE NC2
6
VCC_RTN
1
C7
U1
5R1 R0603
C6
D5
DPAK
1
SOD-123
TP7
C4D02120E
5R1 R0603
R19
5uF
V_Ig_HS1
47k
C0603
0.1uF
R25
-VEE_HS_mid
R1206
R4
33pF
10nF
R24
R28
R13
VCC_RTN
R0603
5V_VCC
+22V_VCC
R0603
C3
10nF
R23
GND
5R1
330
C18
5R1 R1206
47k
C0603
R5
* Input_LS
R18
R9
C17
R1206
R1206
330
HV_VCC
R0603
C16
NC
0R
R10
1k
C15
R11
R12
* Input_HS
TP10
2
C0603
+22V_VCC_RTN
HVDC
R21
25V
SOD-123
1
C1206
ZD7
2u2
3
C9
2
C8
0.1uF
1
2u2
3
C0603
C20
SiC MOSFET
0.1uF
SiC MOSFET
C19
CON1
1
+22V_VCC
* Note:
Si8233 Input / ouput:
Input_HS (CON4.7): HS PWM signal (5V max.)
Input_LS (CON4.8): LS PWM signal (5V max.)
DISABLE (CON4.9): 5V = disable, 0V = enable
KIT8020-CRD-8FF1217P-1_UM Rev A
User Manual
Title
BOM Ver.: A
Main board - Si lab
Size Document Number
Rev
A4 SiC MOSFET EVL Board (CRD 8FF1217P-2)
Date:
Sunday, September 21, 2014
Sheet
1
of
1v0
1
Component list of CRD-8FF1217P-2
1
Part
Ref.
BD1
Bead
Ferrite bead
THR
2
C1
1nF
Ceramic, C0G, 10%
SMD
C1206
3
C2
1uF
Ceramic, X7R, 10%
SMD
C1206
4
C3
33pF
Ceramic, C0G, 10%
SMD
C0603
5
C4
1nF
Ceramic, C0G, 10%
SMD
C1206
6
C5
33pF
Ceramic, C0G, 10%
SMD
C0603
7
C6
1uF
Ceramic, X7R, 10%
SMD
C1206
8
C7
2.2uF
Ceramic, X7R, 10%
SMD
C1206
9
C8
0.1uF
Ceramic, X7R, 10%
SMD
C0603
10
C9
2.2uF
Ceramic, X7R, 10%
SMD
C1206
11
C10
0.1uF
Ceramic, X7R, 10%
SMD
C0603
12
C11
4.7uF
Ceramic, X7R, 10%
SMD
C1206
13
C12
1uF
Ceramic, X7R, 10%
SMD
C1206
14
C13
0.1uF
Ceramic, X7R, 10%
SMD
C0603
15
C14
0.1uF
Ceramic, X7R, 10%
SMD
C0603
16
C15
10nF
B32653A1103K
EPCOS
CAP FILM 10nF 1.6KVDC RADIAL, PP
THR
17
C16
10nF
B32653A1103K
EPCOS
CAP FILM 10nF 1.6KVDC RADIAL, PP
THR
18
C17
0.1uF
B32654A1104K
EPCOS
CAP FILM 0.1UF 1.6KVDC RADIAL, PP
THR
19
C18
5uF
B32774D1505K
EPCOS
CAP FILM 5UF 1.3KVDC RADIAL, PP
THR
20
C19
0.1uF
Ceramic, X7R, 10%
SMD
C0603
21
C20
2.2uF
Ceramic, X7R, 10%
SMD
C1206
22
C23
220pF
C1210C221JGGACTU
Kemet
CAP CER 220PF 2KV 5% NP0 1210
SMD
C1210
23
C24
220pF
C1210C221JGGACTU
Kemet
CAP CER 220PF 2KV 5% NP0 1210
SMD
C1210
24
CON1
HVDC
7808
Skystone
female, M5, 30A, 6P
MECH
25
CON2
GND
7808
Skystone
female, M5, 30A, 6P
MECH
26
CON3
7808
Skystone
female, M5, 30A, 6P
MECH
27
CON4
MID-PT
Gate
input
22-27-2101
Molex
10pin, 2.54mm, male
MECH
28
CON5
GND
7808
Skystone
female, M5, 30A, 6P
MECH
29
D1
C4D20120D
C4D20120D
CREE
1200V, 20A
THR
TO-247
30
D2
1N5819HW
1N5819HW-7-F
Diodes
DIODE SCHOTTKY 40V 1A SOD123
SMD
SOD-123
31
D3
C4D20120D
C4D20120D
CREE
1200V, 20A
THR
TO-247
32
D4
1N5819HW
1N5819HW-7-F
Diodes
DIODE SCHOTTKY 40V 1A SOD123
SMD
SOD-123
33
D5
C4D02120E
C4D02120E
CREE
DPAK
34
JM1
Id
35
L1
CM CHOKE
ACM4520-142-2P-T000
TDK
1200V, 2A
SMD
dim. 1.75mm jumper wire x2 for Id connect
MECH
to GND
CM choke
SMD
36
Q1
SiC MOSFET
C2M0025120D
CREE
25-mΩ, 1200-V, SiC MOSFET
THR
TO-247
37
Q2
SiC MOSFET
C2M0025120D
CREE
25-mΩ, 1200-V, SiC MOSFET
THR
TO-247
38
R1
5R1
Res, 1%
SMD
39
R2
5R1
Res, 1%
SMD
R1206
40
R3
10k
Res, 1%
SMD
R1206
41
R4
47k
Res, 1%
SMD
R0603
42
R5
330
Res, 1%
SMD
R0603
43
R6
5R1
Res, 1%
SMD
R1206
44
R7
5R1
Res, 1%
SMD
R1206
45
R8
10k
Res, 1%
SMD
R1206
46
R9
47k
Res, 1%
SMD
R0603
47
R10
330
Res, 1%
SMD
R0603
18
Value
Part number
74270011
Driver
Brand
Wurth
KIT8020-CRD-8FF1217P-1_UM Rev A
User Manual
Description
Type
PCB
Footprint
R1206
48
R11
NC
SMD
R1206
49
R12
0R
Res, 1%
SMD
R1206
50
R13
5R1
Res, 1%
SMD
R1206
51
R14
47k
Res, 1%
SMD
R0603
52
R15
10k
Res, 1%
SMD
R0603
53
R16
5R1
Res, 1%
SMD
R1206
54
R17
5R1
Res, 1%
SMD
R1206
55
R18
5R1
Res, 1%
SMD
R1206
56
R19
5R1
Res, 1%
SMD
57
R20
5R1
Res, 1%
SMD
R0603
58
R21
1k
Res, 1%
SMD
R0603
59
R22
1k
Res, 1%
SMD
R0603
60
R23
1M
Res, 1%
SMD
R1206
61
R24
1M
Res, 1%
SMD
R1206
62
R25
1M
Res, 1%
SMD
R1206
63
R26
1M
Res, 1%
SMD
R1206
64
R27
1M
Res, 1%
SMD
R1206
65
R28
1M
Res, 1%
SMD
R1206
66
R29
10R
S4-10RF1
Riedon
RES 10 OHM 2W 1% WW SMD
SMD
R4524
67
R30
10R
S4-10RF1
Riedon
RES 10 OHM 2W 1% WW SMD
SMD
R4524
68
TP1
Vd_HS
546-4027
RS
BNC socket, female
MECH
69
TP2
V_Ig_LS2
5020
keystone
round, 1pin, test point
MECH
70
TP3
V_Ig_LS1
5020
keystone
round, 1pin, test point
MECH
71
TP4
Vd_HS
546-4027
RS
BNC socket, female
MECH
72
TP5
Vg_HS
546-4027
RS
BNC socket, female
MECH
73
TP6
Vd_LS
546-4027
RS
BNC socket, female
MECH
74
TP7
V_Ig_HS1
5020
keystone
round, 1pin, test point
MECH
75
TP8
V_Ig_HS2
5020
keystone
round, 1pin, test point
MECH
76
TP9
GND
5020
keystone
round, 1pin, test point
MECH
77
TP10
HV_VCC
5020
keystone
round, 1pin, test point
MECH
78
U1
Si8233
Si8233BD-C-IS
SiLabs
SMD
SOIC16W
79
ZD1
24V
24V, 350mW, 1%
SMD
SOD-123
80
ZD2
5.1V
5.1V, 350mW, 1%
SMD
SOD-123
81
ZD3
5.1V
5.1V, 350mW, 1%
SMD
SOD-123
82
ZD4
24V
24V, 350mW, 1%
SMD
SOD-123
83
ZD5
5.1V
5.1V, 350mW, 1%
SMD
SOD-123
84
ZD6
5.1V
5.1V, 350mW, 1%
SMD
SOD-123
85
ZD7
25V
25V, 350mW, 2%
SMD
SOD-123
86
ZD8
5.1V
5.1V, 350mW, 1%
SMD
SOD-123
Additional component list for the example testing in section 6
QTY
1
Part number
820303B04724G
Brand
Aavid
4
4
4
4
4
AOS 218 247 1
Fischer
elektronik
SDN-414-01
T&M
Research
4
1
19
Description
heat sink, 120mm x 123mm
(Need drill hole for mounting)
Nylon tube, M4, 15mm, for PCB board
stand at 4 corner
Screw, Phillips head, M3x21mm, for PCB
board stand at 4 corner
Comments
Heat sink for whole PCB board
M3 washer
Screw, Phillips head, M3x10mm, for TOFor SiC device assembly
247 mounting
Aluminum oxide insulator pad with screw
hole, TO 247, 25 x 21 x 1.5 mm
Insulating Shoulder Washers, M3, Nylon66,
for TO-247 mounting
Shunt resistor for current Id
0.01ohm current viewing resistor
measurement
KIT8020-CRD-8FF1217P-1_UM Rev A
User Manual
Heat sink hole drilling diagram for the example testing in Section 6
4.0mm.
120.0mm.
114.0mm.
6.0mm.
Total 8 holes, all
hole is ØM3, And
the depth is 4mm
113.0mm.
75.2mm.
17.6mm.
5.0mm
64.0mm.
17.5mm.
27.3mm.
44.8mm.
75.1mm.
6.0mm.
0.0 orgin
20
27.3mm.
KIT8020-CRD-8FF1217P-1_UM Rev A
User Manual
114.0mm.
120.0mm.