Cree CPM2-1200-0025B Silicon Carbide Power MOSFET

VDS
1200 V
ID @ 25˚C 90 A
CPM2-1200-0025B
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
RDS(on)
25 mΩ
N-Channel Enhancement Mode
Features
•
•
•
•
•
•
•
Chip Outline
New C2M SiC MOSFET technlogy
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
•
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequencyy
Applications
•
•
•
•
•
•
Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC converters
Battery Chargers
Motor Drive
Pulsed Power Applications
Part Number
Die Size (mm)
CPM2-1200-0025B
4.04 x 6.44
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VDSmax
Drain - Source Voltage
1200
V
VGS = 0 V, ID = 100 μA
VGSmax
Gate - Source Voltage
-10/+25
V
Absolute maximum values
VGSop
Gate - Source Voltage
-5/+20
V
Recommended operational values
ID
Continuous Drain Current
ID(pulse)
Pulsed Drain Current
TJ , Tstg
Operating Junction and Storage Temperature
TL
TProc
90
60
A
VGS =20 V, TC = 25˚C
VGS =20 V, TC = 100˚C
250
A
-55 to
+150
˚C
Solder Temperature
260
˚C
1.6mm (0.063”) from case for 10s
Maximum Processing Temperature
325
˚C
10 min. maximum
Note (1): Assumes a RθJC < 0.27 K/W
1
Value
CPM2-1200-0025B Rev. B
Pulse width tP limited by Tjmax
Note
Note 1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
Min.
Typ.
Max. Unit
1200
VGS = 0 V, ID = 100 μA
3.0
V
VDS = 10 V, ID = 12.5mA
1.8
2.0
V
VDS = 10 V, ID = 12.5mA,TJ = 150 °C
100
μA
VDS = 1200 V, VGS = 0 V
600
nA
VGS = 20 V, VDS = 0 V
2
25
Drain-Source On-State Resistance
34
mΩ
43
23.6
Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Eoss
Coss Stored Energy
121
μJ
EAS
Avalanche Energy, Single Pluse
3.5
J
EON
Turn-On Switching Energy
1.4
EOFF
Turn Off Switching Energy
0.3
td(on)
Turn-On Delay Time
14
Rise Time
32
Turn-Off Delay Time
29
Fall Time
28
Internal Gate Resistance
1.1
Qgs
Gate to Source Charge
46
Qgd
Gate to Drain Charge
50
Qg
Total Gate Charge
td(off)
tf
RG(int)
Note
2.4
gfs
tr
Test Conditions
V
S
21.7
2788
VGS = 20 V, ID = 50 A
VGS = 20 V, ID = 50 A, TJ = 150 °C
VDS= 20 V, IDS= 50 A
VDS= 20 V, IDS= 50 A, TJ = 150 °C
VGS = 0 V
220
pF
15
VDS = 1000 V
Fig. 11
Fig.
4,5,6
Fig. 7
Fig.
17,18
f = 1 MHz
161
VAC = 25 mV
Fig 16
ID = 50A, VDD = 50V
mJ
VDS = 800 V, VGS = -5/20 V,
ID = 50A, RG(ext) = 2.5Ω,L= 412 μH
ns
VDD = 800 V, VGS = -5/20 V
ID = 50 A,
RG(ext) = 2.5 Ω, RL = 16 Ω
Timing relative to VDS
Per IEC60747-8-4 pg 83
Ω
f = 1 MHz, VAC = 25 mV, ESR of CISS
nC
VDS = 800 V, VGS = -5/20 V
ID = 50 A
Per IEC60747-8-4 pg 83
Fig. 12
Reverse Diode Characteristics
Symbol
VSD
Parameter
Diode Forward Voltage
IS
Continuous Diode Forward Current
trr
Reverse Recovery Time
Qrr
Irrm
Typ.
Max.
Unit
Test Conditions
3.3
V
VGS = - 5 V, ISD = 25 A
3.1
V
VGS = - 5 V, ISD = 25 A, TJ = 150 °C
90
45
ns
Reverse Recovery Charge
406
nC
Peak Reverse Recovery Current
13.5
A
Note 2
VGS = - 5 V, ISD = 50 A ,TJ = 25 °C
VR = 800 V
dif/dt = 1000 A/µs
Note 2
Note (2): When using SiC Body Diode the maximum recommended VGS = -5V
2
Thermal Resistance from Junction to Ambient
CPM2-1200-0025B Rev. B
40
Fig. 8, 9,
10
TC= 25 °C
Note (3): For inductive and resistive switching data and waveforms please refer to datasheet for packaged device.
Thermal Characteristics
Part number C2M0025120D.
RθJC
Note
Typical Performance
150
150
VGS = 20 V
Conditions:
TJ = -55 °C
tp < 200 µs
120
VGS = 18 V
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
120
VGS = 14 V
90
VGS = 12 V
60
VGS = 10 V
30
2.5
5.0
7.5
VGS = 18 V
VGS = 16 V
VGS = 12 V
VGS = 10 V
60
30
0
10.0
0.0
2.5
Drain-Source Voltage, VDS (V)
7.5
10.0
Figure 2. Output Characteristics TJ = 25 °C
1.8
Conditions:
TJ = 150 °C
tp < 200 µs
VGS = 16 V
On Resistance, RDS On (P.U.)
VGS = 18 V
VGS = 20 V
Conditions:
IDS = 50 A
VGS = 20 V
tp < 200 µs
1.6
VGS = 14 V
120
Drain-Source Current, IDS (A)
5.0
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 °C
150
VGS = 14 V
90
0
0.0
VGS = 20 V
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 16 V
VGS = 12 V
90
VGS = 10 V
60
30
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0.0
2.5
5.0
7.5
-50
10.0
-25
0
80
60
Conditions:
VGS = 20 V
tp < 200 µs
On Resistance, RDS On (mOhms)
On Resistance, RDS On (mOhms)
TJ = 150 °C
50
40
TJ = 25 °C
30
TJ = -55 °C
20
10
0
100
125
150
40
VGS = 14 V
30
VGS = 16 V
VGS = 18 V
VGS = 20 V
20
10
0
0
30
60
90
120
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
75
Conditions:
IDS = 50 A
tp < 200 µs
50
60
50
Figure 4. Normalized On-Resistance vs. Temperature
Figure 3. Output Characteristics TJ = 150 °C
70
25
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
CPM2-1200-0025B Rev. B
150
-50
-25
0
25
50
75
100
125
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
150
Typical Performance
100
-5
Conditions:
VDS = 20 V
tp < 200 µs
-4
-2
-1
VGS = 0 V
Drain-Source Current, IDS (A)
TJ = 150 °C
60
TJ = 25 °C
40
TJ = -55 °C
20
0
0
Condition:
TJ = -55 °C
tp < 200 µs
VGS = -5 V
80
Drain-Source Current, IDS (A)
-3
-20
-40
VGS = -2 V
-60
-80
0
0
2
4
6
8
10
12
14
-100
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (A)
Figure 7. Transfer Characteristic For
Various Junction Temperatures
-5
-4
-3
-2
Figure 8. Body Diode Characteristic at -55 ºC
-1
0
Condition:
TJ = 25 °C
tp < 200 µs
VGS = -5 V
-5
-4
-3
0
-60
-80
0
Condition:
TJ = 150 °C
tp < 200 µs
VGS = 0 V
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
-40
VGS = -2 V
-1
VGS = -5 V
-20
VGS = 0 V
-2
-20
-40
VGS = -2 V
-60
-80
-100
-100
Drain-Source Voltage, VDS (A)
Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
4.0
3.5
2.5
2.0
1.5
1.0
0.5
0.0
-25
0
25
50
75
100
125
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
CPM2-1200-0025B Rev. B
150
Conditions:
IDS = 50 A
IGS = 100 mA
VDS = 800 V
TJ = 25 °C
20
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
3.0
4
25
Conditons
VDS = 10 V
IDS = 12.5 mA
-50
0
15
10
5
0
-5
0
20
40
60
80
100
120
140
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristic
160
180
Typical Performance
-5
-4
-3
-2
-1
0
-5
-4
-3
-2
-1
0
0
VGS = 0 V
0
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 5 V
Drain-Source Current, IDS (A)
-20
-40
VGS = 10 V
-60
VGS = 15 V
-80
VGS = 0 V
VGS = 5 V
-20
Drain-Source Current, IDS (A)
Conditions:
TJ = -55 °C
tp < 200 µs
VGS = 10 V
VGS = 15 V
-40
-60
VGS = 20 V
-80
VGS = 20 V
-100
Drain-Source Voltage, VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-5
-4
-3
-2
-1
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
150
0
Conditions:
TJ = 150 °C
tp < 200 µs
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 20 V
-40
-60
Stored Energy, EOSS (µJ)
120
-20
VGS = 15 V
Drain-Source Current, IDS (A)
-100
Drain-Source Voltage, VDS (V)
90
60
30
-80
0
0
-100
Drain-Source Voltage, VDS (V)
200
400
Figure 15. 3rd Quadrant Characteristic at 150 ºC
1000
1200
10000
Ciss
Ciss
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
1000
100
Crss
10
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
1000
Capacitance (pF)
Coss
Capacitance (pF)
800
Figure 16. Output Capacitor Stored Energy
10000
Coss
100
Crss
10
1
0
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0-200 V)
5
600
Drain to Source Voltage, VDS (V)
CPM2-1200-0025B Rev. B
200
1
0
200
400
600
Drain-Source Voltage, VDS (V)
800
Figure 18. Capacitances vs. Drain-Source
Voltage (0-1000 V)
1000
Mechanical Parameters
Parameter
Typical Value
Unit
4.04 x 6.44
mm
1.0 x 4.54 (x3)
mm
0.50 x 0.80
mm
180 ± 40
µm
Top Side Source metallization (Al)
4
µm
Top Side Gate metallization (Al)
4
µm
0.8 / 0.6
µm
Die Dimensions (L x W)
Exposed Source Pad Metal Dimensions (LxW) Each
Gate Pad Dimensions (L x W)
Die Thickness
Bottom Drain metallization (Ni/Ag)
Chip Dimensions
6
CPM2-1200-0025B Rev. B
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems.
Related Links
•
•
•
C2M PSPICE Models: www.cree.com/power
SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power
Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
7
CPM2-1200-0025B Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power