PRELIMINARY CMPA1D1E025F 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. The Ku Band 25W MMIC is targeted for commercial Ku Band applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic PN: CMPA1D 1E025F Package Type :440208 flanged package. Typical Performance Over 13.75-14.5 GHz (TC = 25˚C) Parameter 13.75 GHz 14.0 GHz Small Signal Gain 24 24.5 Linear Output Power 24 Power Gain Power Added Efficiency 14.25 GHz 14.5 GHz Units 24.5 24 dB 23 21 20 W 21 21 20 20 dB 22 20 18 18 % Note1: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA1D1E025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2. Features Applications • Satellite Communications Uplink • 24 dB Small Signal Gain • 40 W Typical Pulsed PSAT • Operation up to 40 V • 20 W linear power under OQPSK 2015 Rev 1.0 – June • Class A/B high gain, high efficiency 50 ohm MMIC Ku Band high power amplifier Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Symbol Rating Units Drain-source Voltage Parameter VDSS 84 VDC 25˚C Conditions Gate-source Voltage VGS -10, +2 VDC 25˚C Power Dissipation PDISS 94 W Storage Temperature TSTG -55, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 10 mA Soldering Temperature1 TS 245 ˚C Screw Torque τ 40 in-oz RθJC 1.5 ˚C/W PDISS = 94 W, 85˚C TC -40, +85 ˚C CW, PDISS = 94 W Thermal Resistance, Junction to Case Case Operating Temperature 25˚C Note: 1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp Electrical Characteristics (Frequency = 13.75 GHz to 14.5 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions VGS(TH) -3.8 -3.0 -2.3 V VDS = 10 V, ID = 18.2 mA VQ – -2.7 – V VDS = 40 V, ID = 240 mA Saturated Drain Current IDS 14.6 16.4 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 84 100 – V VGS = -8 V, ID = 18.2 mA Small Signal Gain S21 – 24 – dB VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm Input Return Loss S11 – -7 – dB VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm Output Return Loss S22 – -7 – dB VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm VSWR – – 5:1 Y No damage at all phase angles, VDD = 40 V, IDQ = 240 mA, POUT = 41 dBm OQPSK DC Characteristics1 Gate Threshold Gate Quiscent Voltage 2 RF Characteristics3 Output Mismatch Stress Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in the CMPA1D1E025F-AMP Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Electrical Characteristics Continued... (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Power Added Efficiency PAE1 – 18.6 – % Power Added Efficiency PAE2 – 16.4 – % Power Gain GP1 – 23.3 – dB Power Gain GP2 – 22.1 – dB OQPSK Linearity ACLR1 – -40 – dBc OQPSK Linearity ACLR2 – -38 – dBc Conditions RF Characteristics1,2,3,4 VDD = 40 V, IDQ = 240 mA, Frequency = 13.75 GHz VDD = 40 V, IDQ = 240 mA, Frequency = 14.5 GHz VDD = 40 V, IDQ = 240 mA, Frequency = 13.75 GHz VDD = 40 V, IDQ = 240 mA, Frequency = 14.5 GHz VDD = 40 V, IDQ = 240 mA, Frequency = 13.75 GHz VDD = 40 V, IDQ = 240 mA, Frequency = 14.5 GHz Notes: 1 Measured in the CMPA1D1E025F-AMP 2 Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2. 3 Measured at PAVE = 41 dBm. 4 Fixture loss de-embedded. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Figure 1. - Small Signal S-parameters Small Signal S-parameters CMPA1D1E025F in Test Fixture CMPA1D1E025F in Test Fixture VDD =VDD 40V, I = 240 mA, Tcase = 25°C = 40DQV, IDQ = 240 mA, Tcase = 25°C 25 S21 S11 20 S22 Gain, Return Loss (dB) 15 10 5 0 -5 -10 -15 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Figure 2. - Modulated Spectral Regrowth = -30dBc, MHz from Carrier Modulated @@ Spectral Regrowth = -30dBc, 1.6 MHz1.6 from Carrier Msps OQPSK Modulation Modulation 1.61.6 Msps OQPSK = 40 V, IDQ = 240 mA, Tcase = 25°C VDDVDD = 40 V, IDQ = 240 mA, Tcase = 25°C 44 30 VDDOutput = 40V,Power IDQ = 240 mA, Tcase = 25°C 43 28 Pout 42 26 41 24 PAE 40 22 Gain 39 20 38 18 PAE 37 16 36 14 35 12 34 13.0 13.2 13.4 13.6 13.8 14.0 14.2 14.4 14.6 14.8 15.0 Gain (dB), PAE (%) Output Power (dBm) Gain 10 15.2 Frequency (GHz) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Mask @Mask Average Power = 41dBm Figure Spectral 3. - Spectral @ Output Average Output Power = 41dBm 1.6 OQPSK Modulation 1.6Msps Msps OQPSK Modulation Vdd = 40 V, Idq = 240 mA, Tcase = 25°C VDD = 40 V, IDQ = 240 mA, Tcase = 25°C 0 Spectral Regrowth (dBc) -5 -10 13.75 GHz -15 14 GHz -20 14.25 GHz -25 14.5 GHz -30 -35 -40 -45 -50 -55 -60 -65 -70 -6 -5 -4 -3 -2 -1 0 1 Frequency Offset (MHz) 2 3 4 5 6 Modulated Power Sweep Figure 4. - CMPA1D1E025F 1.6 Msps OQPSK Modulated Modulation Power Sweep Vdd1.6 = 40Msps V, Idq OQPSK = 240 mA,Modulation Tcase = 25°C VDD = 40 V, IDQ = 240 mA, Tcase = 25°C 27.5 0 Gain -5 22.5 -10 Gain (dB), PAE (%) 20.0 17.5 15.0 Gain 13.75 GHz Gain 14 GHz Gain 14.25 GHz Gain 14.5 GHz PAE 13.75 GHz PAE 14 GHz PAE 14.25 GHz PAE 14.5 GHz SR 13.75 GHz SR 14 GHz SR 14.25 GHz SR 14.5 GHz -15 -20 PAE -25 12.5 -30 10.0 -35 SR 7.5 -40 5.0 -45 2.5 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Spectral Regrowth @ 1.6MHz Offset (dBc) 25.0 -50 Average Output Power (dBm) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Figure 5. - Modulated Power Sweep Power Sweep 1.6Modulated Msps OQPSK Modulation 1.6 Msps OQPSK Modulation VVDD = 40 V, I = 240 mA, Tcase = 25°C DD = 40 V, IDQ DQ = 240 mA, Tcase = 25°C 180 160 Part would exceed recommended maximum 225 degC channel temperature at 85 degC case temp, if operated in this region 140 Trise (degC) 120 100 Trise 13.75 GHz Trise 14 GHz 80 Trise 14.25 GHz 60 Trise 14.5 GHz 40 20 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Average Output Power (dBm) Modulated Power Sweep Power Sweep Figure 6. - CMPA1D1E025F Modulated MspsOQPSK OQPSK Modulation Modulation 1.61.6 Msps VDD = 40 V, IDQ = 240 mA, Tcase = 25°C VDD = 40 V, IDQ = 240 mA, Tcase = 25°C 3.4 3.2 13.75 GHz Drain Current (A) 3 2.8 14 GHz 2.6 14.25 GHz 2.4 14.5 GHz 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Average Output Power (dBm) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Figure 7. - CMPA1D1E025F Two Tone Power Sweep Two Tone Power Sweep IMD3 @ 1 MHz Carrier IMD3 @ 1 MHz Carrier Spacing Spacing VDDVDD = 40 V, V, IDQIDQ = 240 mA, Tcase = 40 = 240 mA, Tcase==25°C 25°C -15 13.75 GHz Third Order Intermodulation (dBc) -20 14 GHz 14.25 GHz -25 14.5 GHz -30 -35 -40 -45 -50 -55 24 26 28 30 32 34 36 38 40 42 44 Pout (dBm) Two Tone Power Sweep Figure 8. -Two Tone Power Sweep IMD @ 1 MHz Carrier Spacing, 14 GHz IMD 1 MHz Spacing, GHz VDD @ = 40 V, IDQCarrier = 240 mA, Tcase 14 = 25°C VDD = 40 V, IDQ = 240 mA, Tcase = 25°C -15 IMD3 -20 IMD5 -25 IMD7 IMD (dBc) -30 -35 -40 -45 -50 -55 24 26 28 30 32 34 36 38 40 42 44 Pout (dBm) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Two Tone Carrier Spacing Sweep 38dBm AverageSweep Ouput @ Power, 14 GHz Figure 9. - Two Tone @ Carrier Spacing 38dBm Average Ouput Power, 14 GHz Vdd = 40 V, Idq =1 Tcase = 25°C VDD = 40 V, IDQ = A, 1 A, Tcase = 25°C 0 -IMD3 +IMD3 -10 -IMD5 +IMD5 IMD (dBc) -20 -IMD7 +IMD7 -30 -40 -50 -60 -70 0.10 1.00 10.00 100.00 Carrier Spacing (MHz) CW vs. Frequency @ PIN = 23 dBm VDD = 40 V, IDQ = 240 mA, Tcase Figure 10. - CW vs. Frequency @ PIN == 25°C 23 dBm VDD = 40 V, IDQ = 240 mA, Tcase = 25°C 30 44 28 43 26 42 24 41 22 40 20 39 18 38 14 Gain PAE 36 35 13.0 16 Pout 37 13.2 13.4 13.6 13.8 14.0 14.2 14.4 14.6 14.8 15.0 Gain (dB), PAE (%) Output Power (dBm) 45 12 15.2 10 15.4 Frequency (GHz) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Figure 11. CW Power CW-Power SweepSweep CMPA1D1E025F in CMPA1D1E025F inTest Test Fixture Fixture = 40V, = 240 mA,Tcase Tcase==25°C 25°C VDDVDD = 40V, IDQIDQ = 240 mA, 27.5 25 22.5 Gain 13.75 GHz Gain 14 GHz Gain (dB), PAE (%) 20 Gain 14.25 GHz Gain 14.5 GHz 17.5 PAE 13.75 GHz PAE 14 GHz 15 PAE 14.25 GHz PAE 14.5 GHz 12.5 10 7.5 5 2.5 28 30 32 34 36 38 40 42 44 Pout (dBm) Pulsed vs. Frequency @ PIN = 23 dBm in Test Fixture Figure 12. CMPA1D1E025F - Pulsed vs. Frequency @ PIN = 23 dBm 100 uS pulse width, 10% duty cycle CMPA1D1E025F in Test Fixture Vdd = 40 V, Idq = 240 mA, Tcase = 25°C 47 34 46 32 45 30 44 28 43 26 42 24 41 22 40 Gain 18 PAE 38 37 13.00 20 Pout 39 13.20 13.40 13.60 13.80 14.00 14.20 14.40 14.60 14.80 15.00 Gain (dB), PAE (%) Output Power (dBm) 100 uS pulse width, 10% duty cycle VDD = 40 V, IDQ = 240 mA, Tcase = 25°C 16 15.20 14 15.40 Frequency (GHz) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Figure 13. - Pulsed Power Sweep Pulsed Power Sweep CMPA1D1E025F in Test Fixture CMPA1D1E025F Test Fixture 10% Duty, 100 uSinPulse Width 10% Duty, Pulse Width VDD = 40V, IDQ = 100 240 uS mA, Tcase = 25°C VDD = 40V, IDQ = 240 mA, Tcase = 25°C 30 27.5 25 Gain (dB), PAE (%) 22.5 PAE 13.75 GHz 20 PAE 14 GHz PAE 14.25 GHz 17.5 PAE 14.5 GHz 15 Gain 13.75 GHz 12.5 Gain 14.25 GHz Gain 14 GHz Gain 14.5 GHz 10 7.5 5 2.5 30 32 34 36 38 40 42 44 46 Pout (dBm) VDD = Figure 14. -AM-AM AM-AM Vdd Idq = 240Tcase mA, Tcase = 25°C 40 V,=I 40=V,240 mA, = 25°C DQ 26 25 24 S21 Magnitude (dB) 23 22 21 20 19 18 13.75 GHz 17 14 GHz 16 14.25 GHz 15 14.5 GHz 14 22 24 26 28 30 32 34 36 38 40 42 44 Output Power (dBm) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Figure 15. - AM-PM AM-PM VDDVdd = 40= V, = 240 mA, Tcase = =25°C 40IV, Idq = 240 mA, Tcase 25°C DQ 12 10 8 S21 Phase (Degrees) 6 4 2 0 -2 13.75 GHz 14 GHz -4 14.25 GHz 14.5 GHz -6 -8 22 24 26 28 30 32 34 36 38 40 42 225 250 44 Output Power (dBm) CMPA1D1E025F Power Dissipation De-rating Curve Power Dissipation De-rating Curve 100 Power Dissipation (W) 80 60 Note 1 40 20 0 0 25 50 75 100 125 150 175 200 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 11 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF CMPA1D1E025F-AMP Demonstration Amplifier Circuit Bill of Materials Designator C5 Description Qty CAP ELECT 100UF 80V AFK SMD 1 C1,C2 CAP, 33000PF, 0805,100V, X7R 2 C3,C4 CAP, 2.2UF, 100V, 10%, X7R, 1210 4 J1,J2 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST, 20MIL 2 J4 CONN, SMB, STRAIGHT JACK RECEPTACLE, SMT, 50 OHM, Au PLATED 1 J3 HEADER RT>PLZ .1CEN LK 9POS 1 W1 WIRE, BLACK, 22 AWG ~ 1.50” 1 W2 WIRE, BLACK, 22 AWG ~ 1.75” 1 W3 WIRE, BLACK, 22 AWG ~ 2.0” 1 PCB, TEST FIXTURE, TACONICS RF35P, 20 MILS, 440208 PKG 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CMPA1D1E025F 1 Q1 CMPA1D1E025F-AMP Demonstration Amplifier Circuit Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 12 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF CMPA1D1E025F-AMP Demonstration Amplifier Circuit Schematic CMPA1D1E025F-AMP Demonstration Amplifier Circuit Outline Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 13 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Product Dimensions CMPA1D1E025F (Package Type — 440208) Pin Number Qty 1 Gate Bias 2 NC 3 RF In 4 NC 5 Gate Bias 6 Drain Bias 7 Drain Bias 8 RF Out 9 Drain Bias 10 Drain Bias 11 Source Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 14 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Part Number System CMPA1D1E025F Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 13.75 GHz Upper Frequency1 14.5 GHz 25 W Flange - Power Output Package Table 1. Note : Alpha characters used in frequency code 1 indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 15 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Product Ordering Information Order Number Description Unit of Measure CMPA1D1E025F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CMPA1D1E025F-TB CMPA1D1E025F-AMP Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 16 CMPA1D1E025F Rev 1.0, Preliminary Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 17 CMPA1D1E025F Rev 1.0, Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF