PRELIMINARY CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: CGHV315 00F Package Type : 440217 Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.9 GHz 3.1 GHz Units Output Power 665 705 645 W Gain 13.2 13.5 13.1 dB 66 68 62 % Drain Efficiency Note: Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 45 dBm. 20 Rev 1.0 - August Y 15 - PRELIMINAR Features • 2.7 - 3.1 GHz Operation • 675 W Typical Output Power • 13.3 dB Power Gain • 66% Typical Drain Efficiency • 50 Ohm Internally Matched • <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Pulse Width PW 500 µs Duty Cycle DC 10 % Drain-Source Voltage VDSS 125 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 ˚C Conditions Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 80 mA 25˚C Maximum Drain Current1 IDMAX 24 A 25˚C TS 245 ˚C τ 40 in-oz Pulsed Thermal Resistance, Junction to Case RθJC 0.22 ˚C/W 100 μsec, 10%, 85˚C , PDISS = 376 W Pulsed Thermal Resistance, Junction to Case RθJC 0.30 ˚C/W 500 μsec, 10%, 85˚C, PDISS = 376 W TC -40, +85 ˚C Soldering Temperature 2 Screw Torque Case Operating Temperature Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 83.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 0.5 A Saturated Drain Current2 IDS 62.7 75.5 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 83.6 mA DC Characteristics (TC = 25˚C) 1 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV31500F Rev 1.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics Continued... Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics3 (TC = 25˚C, F0 = 2.7 - 3.1 GHz unless otherwise noted) Output Power at 2.7 GHz POUT1 – 665 – W VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Output Power at 2.9 GHz POUT2 – 705 – W VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Output Power at 3.1 GHz POUT3 – 645 – W VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Gain at 2.7 GHz GP1 – 13.2 – dB VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Gain at 2.9 GHz GP2 – 13.5 – dB VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Gain at 3.1 GHz GP3 – 13.1 – dB VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Drain Efficiency at 2.7 GHz DE1 – 66 – % VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Drain Efficiency at 2.9 GHz DE2 – 68 – % VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Drain Efficiency at 3.1 GHz DE3 – 62 – % VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Small Signal Gain S21 – 14.5 – dB VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm Input Return Loss S11 – -15 – dB VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm Output Return Loss S22 – -6 – dB VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm D – -0.3 – dB VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm VSWR – 5:1 – Y Amplitude Droop Output Stress Match No damage at all phase angles, VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Pulsed Notes: 3 Measured in CGHV31500F-AMP. Pulse Width = 500 μS, Duty Cycle = 10%. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV31500F Rev 1.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - CGHV31500F S-Parameters CGHV31400F Typical Sparameters VDD==50 50V,V,Idq IDQ==500 0.5mA A Vdd 20 15 Magnitude (dB) 10 5 0 -5 -10 S(2,1) -15 S(1,1) S(2,2) -20 2.3 2.5 2.7 2.9 Frequency (GHz) 3.1 3.3 3.5 Output Power, Gainand andDrain DrainEfficiency Efficiency vs vs.Frequency Frequency Figure CGHV31400F 2. - CGHV31500F Output Power Vdd = 50 V, Idq = 500 mA, Pin = 45 dBm, Pulse Width = 500 us, Duty 10 VDD = 50 V, IDQ = 0.5 A, PIN = 45 dBm, Pulse Width = 500μs, Duty Cycle = 10%, Cycle TCASE ==25°C %, Tcase = 25 ̊C 800 80 Output Power 70 Drain Efficiency Output Power (W) 600 60 500 50 400 40 Output Power Gain 300 30 Drain Efficiency 200 20 Gain 100 0 10 2.5 2.6 2.7 2.8 2.9 Frequency (GHz) 3.0 3.1 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 Gain (dB) & Drain Efficiency (%) 700 CGHV31500F Rev 1.0 - PRELIMINARY 3.2 3.3 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV31500F-AMP Application Circuit Bill of Materials Designator Description Qty R1 RES, 511, OHM, +/- 1%, 1/16W, 0603 R2 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 1 1 C1 CAP, 6.8pF, +/-0.25%, 250V, 0603 1 C2, C7, C8 CAP, 10.0pF, +/-1%, 250V, 0805 3 C3 CAP, 10.0pF, +/-5%, 250V, 0603 1 CAP, 470pF, 5%, 100V, 0603, X 2 C4, C9 C5 CAP, 33000 pF, 0805, 100V, X7R 1 C6 CAP, 10uF 16V TANTALUM 1 C10 CAP, 1.0uF, 100V, 10%, X7R, 1210 1 C11 CAP, 33uF, 20%, G CASE 1 C12 CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC 1 CONN, SMA, PANEL MOUNT JACK, FL 2 HEADER, RT>PLZ, 0.1CEN LK 9POS 1 J4 CONNECTOR; SMB, Straight, JACK, SMD 1 W1 CABLE, 18 AWG, 4.2 1 PCB, RO4350, 2.5 X 4.0 X 0.030 1 CGHV31500F 1 J1,J2 J3 Q1 CGHV31500F Power Dissipation De-rating Curve CGHV31500F Transient Power Dissipation De-Rating Curve 400 350 Power Dissipation (W) 300 Note 1 250 200 150 100 500 us 10 % 50 0 100 us 10 % Maximum Case Temperature (°C) 0 25 50 75 100 125 150 175 200 225 250 Note 1. Area exceeds Maximum Case Temperature (See Page Maximum Case Temperature (°C) 2). Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV31500F Rev 1.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV31500F-AMP Application Circuit Outline CGHV31500F-AMP Application Circuit Schematic Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV31500F Rev 1.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV31500F (Package Type — 440217) Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV31500F Rev 1.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV31500F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 3.1 GHz 500 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV31500F Rev 1.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV31500F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV31500F-TB CGHV31500F-AMP Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV31500F Rev 1.0 - PRELIMINARY Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV31500F Rev 1.0 - PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf