CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440210. PN: CGHV354 00F Package Type : 440215 Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier Parameter 2.9 GHz 3.2 GHz 3.5 GHz Units Output Power 375 400 360 W Gain 9.8 10 9.6 dB Drain Efficiency 66 59 57 % Note: Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 46 dBm. 15 Rev 2.0 - May 20 Features • 2.9 - 3.5 GHz Operation • 400 W Typical Output Power • 10.5 dB Power Gain • 60% Typical Drain Efficiency • 50 Ohm Internally Matched • <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Pulse Width PW 500 µs Duty Cycle DC 10 % Drain-Source Voltage VDSS 125 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 ˚C Conditions Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 80 mA 25˚C Maximum Drain Current1 IDMAX 24 A 25˚C TS 245 ˚C τ 40 in-oz Pulsed Thermal Resistance, Junction to Case RθJC 0.22 ˚C/W 100 μsec, 10%, 85˚C , PDISS = 418 W Pulsed Thermal Resistance, Junction to Case RθJC 0.30 ˚C/W 500 μsec, 10%, 85˚C, PDISS = 418 W TC -40, +85 ˚C Soldering Temperature 2 Screw Torque Case Operating Temperature Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 83.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 45 V, ID = 0.5 A Saturated Drain Current IDS 62.7 75.5 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 83.6 mA DC Characteristics1 (TC = 25˚C) 2 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV35400F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics Continued... Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics (TC = 85˚C, F0 = 2.9 - 3.5 GHz unless otherwise noted) 3 Output Power at 2.9 GHz POUT1 340 375 – W VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Output Power at 3.2 GHz POUT2 340 400 – W VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Output Power at 3.5 GHz POUT3 300 360 – W VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Gain at 2.9 GHz GP1 9.3 9.8 – dB VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Gain at 3.2 GHz GP2 9.3 10.0 – dB VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Gain at 3.5 GHz GP3 8.7 9.6 – dB VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Drain Efficiency at 2.9 GHz DE1 58 66 – % VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Drain Efficiency at 3.2 GHz DE2 53 59 – % VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Drain Efficiency at 3.5 GHz DE3 48 57 – % VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Small Signal Gain S21 10.5 12 – dB VDD = 45 V, IDQ = 500 mA, PIN = -10 dBm Input Return Loss S11 – -8 -3.0 dB VDD = 45 V, IDQ = 500 mA, PIN = -10 dBm Output Return Loss S22 – -8 -4.0 dB VDD = 45 V, IDQ = 500 mA, PIN = -10 dBm D – -0.3 – dB VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm VSWR – 5:1 – Y Amplitude Droop Output Stress Match No damage at all phase angles, VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Pulsed Notes: 3 Measured in CGHV35400F-AMP. Pulse Width = 500 μS, Duty Cycle = 10%. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV35400F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - CGHV35400F Typical Sparameters CGHV35400F Sparameters VDDVdd = 45 V, V, IDQIdq = 0.5 A mA = 45 = 500 15 10 Magnitude (dB) 5 0 -5 S(2,1) -10 S(1,1) S(2,2) -15 2500 2700 2900 3100 3300 3500 3700 3900 Frequency (GHz) Figure 2.CGHV35400F - CGHV35400F and Drain Eff vs Frequency at T 85 deg = 85˚C PoutPand C OUT Drain Eff vs Frequency at Tcase = CASE Vdd = 45 V, Idq = 0.5 A, Pin = 46 dBm, Pulse Width = 500 usec, Duty Cycle 10 VDD = 45 V, IDQ = 0.5 A, PIN = 46 dBm, Pulse Width = 500µs, Duty Cycle = 10= % 100 450 90 400 80 350 70 300 60 250 Drain Efficiency Output Power % 500 50 Output Power Drain Efficiency 200 2.7 2.8 2.9 3.0 3.1 3.2 3.3 Frequency (GHz) 3.4 3.5 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV35400F Rev 2.0 3.6 3.7 40 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance CGHV35400F Output Power vs Input Power Figure 3. - CGHV35400F Output Power vs Input Power Vdd = 45 V, Idq = 500 mA, Pulse Width = 500 us, Duty Cycle = 10 %, Tcase = 85 VDD = 45 V, IDQ = 500 mA, Pulse WidthC = 500 µs, Duty Cycle = 10 %, Tcase = 85 °C 60 55 Output Power (dBm) 50 45 40 35 30 2.9 GHz 3.2 GHz 25 20 3.5 GHz 5 10 15 20 25 30 Input Power (dBm) 35 40 45 50 Figure 4. - CGHV35400F Drain Efficiency & Gain vs Input Power DrainWidth Efficiency & Gain vs Input Power VDD = 45 V, IDQ CGHV35400F = 500 mA, Pulse = 500 µs, Duty Cycle = 10 %, Tcase = 85 °C 70 16 60 14 50 12 40 Drain Efficiency - 2.9 GHz 30 Gain - 2.9 GHz 10 Drain Efficiency - 3.2 GHz Drain Efficiency - 3.5 GHz 8 Gain - 3.2 GHz Gain - 3.5 GHz 20 6 10 4 0 5 10 15 20 25 30 Input Power (dBm) 35 40 45 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 Gain (dB) Drain Efficiency (%) Vdd = 45 V, Idq = 500 mA, Pulse Width = 500 us, Duty Cycle = 10 %, Tcase = 85 C CGHV35400F Rev 2.0 50 2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV35400F-AMP Application Circuit Bill of Materials Designator Description Qty R1 RES, 511, OHM, +/- 1%, 1/16W, 0603 R2 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 1 1 C1 CAP, 6.8pF, +/-0.25%, 250V, 0603 1 C2, C7, C8 CAP, 10.0pF, +/-1%, 250V, 0805 3 C3 CAP, 10.0pF, +/-5%, 250V, 0603 1 CAP, 470pF, 5%, 100V, 0603, X 2 C4, C9 C5 CAP, 33000 pF, 0805, 100V, X7R 1 C6 CAP, 10uF 16V TANTALUM 1 C10 CAP, 1.0uF, 100V, 10%, X7R, 1210 1 C11 CAP, 33uF, 20%, G CASE 1 C12 CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC 1 CONN, SMA, PANEL MOUNT JACK, FL 2 HEADER, RT>PLZ, 0.1CEN LK 9POS 1 J4 CONNECTOR; SMB, Straight, JACK, SMD 1 W1 CABLE, 18 AWG, 4.2 1 PCB, RO4350, 2.5 X 4.0 X 0.030 1 CGHV35400F 1 J1,J2 J3 Q1 CGHV35400F Power Dissipation De-rating Curve Figure 5. - CGHV35400F Transient Power Dissipation De-Rating Curve CGHV35400F Transient Power Dissipation De-Rating Curve 500 Power Dissipation (W) 400 300 Note 1 200 100 0 0 25 50 Maximum Case Temperature 75 100 125 150 (°C) 175 200 225 250 Maximum Case Temperature ( C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV35400F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV35400F-AMP Application Circuit Outline CGHV35400F-AMP Application Circuit Schematic Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV35400F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV35400F (Package Type — 440210) Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV35400F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV35400F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 3.5 GHz 400 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV35400F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV35400F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV35400F-TB CGHV35400F-AMP Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV35400F Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV35400F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf