CGHV35400F - Cree, Inc

CGHV35400F
400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440210.
PN: CGHV354
00F
Package Type
: 440215
Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier
Parameter
2.9 GHz
3.2 GHz
3.5 GHz
Units
Output Power
375
400
360
W
Gain
9.8
10
9.6
dB
Drain Efficiency
66
59
57
%
Note:
Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 46 dBm.
15
Rev 2.0 - May 20
Features
•
2.9 - 3.5 GHz Operation
•
400 W Typical Output Power
•
10.5 dB Power Gain
•
60% Typical Drain Efficiency
•
50 Ohm Internally Matched
•
<0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Pulse Width
PW
500
µs
Duty Cycle
DC
10
%
Drain-Source Voltage
VDSS
125
Volts
25˚C
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
Storage Temperature
TSTG
-65, +150
˚C
Conditions
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
80
mA
25˚C
Maximum Drain Current1
IDMAX
24
A
25˚C
TS
245
˚C
τ
40
in-oz
Pulsed Thermal Resistance, Junction to Case
RθJC
0.22
˚C/W
100 μsec, 10%, 85˚C , PDISS = 418 W
Pulsed Thermal Resistance, Junction to Case
RθJC
0.30
˚C/W
500 μsec, 10%, 85˚C, PDISS = 418 W
TC
-40, +85
˚C
Soldering Temperature
2
Screw Torque
Case Operating Temperature
Notes:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library
Electrical Characteristics
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 83.6 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 45 V, ID = 0.5 A
Saturated Drain Current
IDS
62.7
75.5
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
150
–
–
VDC
VGS = -8 V, ID = 83.6 mA
DC Characteristics1 (TC = 25˚C)
2
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Electrical Characteristics Continued...
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics (TC = 85˚C, F0 = 2.9 - 3.5 GHz unless otherwise noted)
3
Output Power at 2.9 GHz
POUT1
340
375
–
W
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Output Power at 3.2 GHz
POUT2
340
400
–
W
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Output Power at 3.5 GHz
POUT3
300
360
–
W
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Gain at 2.9 GHz
GP1
9.3
9.8
–
dB
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Gain at 3.2 GHz
GP2
9.3
10.0
–
dB
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Gain at 3.5 GHz
GP3
8.7
9.6
–
dB
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Drain Efficiency at 2.9 GHz
DE1
58
66
–
%
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Drain Efficiency at 3.2 GHz
DE2
53
59
–
%
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Drain Efficiency at 3.5 GHz
DE3
48
57
–
%
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Small Signal Gain
S21
10.5
12
–
dB
VDD = 45 V, IDQ = 500 mA, PIN = -10 dBm
Input Return Loss
S11
–
-8
-3.0
dB
VDD = 45 V, IDQ = 500 mA, PIN = -10 dBm
Output Return Loss
S22
–
-8
-4.0
dB
VDD = 45 V, IDQ = 500 mA, PIN = -10 dBm
D
–
-0.3
–
dB
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
VSWR
–
5:1
–
Y
Amplitude Droop
Output Stress Match
No damage at all phase angles,
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm Pulsed
Notes:
3
Measured in CGHV35400F-AMP. Pulse Width = 500 μS, Duty Cycle = 10%.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 1. - CGHV35400F Typical Sparameters
CGHV35400F Sparameters
VDDVdd
= 45
V, V,
IDQIdq
= 0.5
A mA
= 45
= 500
15
10
Magnitude (dB)
5
0
-5
S(2,1)
-10
S(1,1)
S(2,2)
-15
2500
2700
2900
3100
3300
3500
3700
3900
Frequency (GHz)
Figure 2.CGHV35400F
- CGHV35400F
and Drain Eff vs Frequency at T 85 deg
= 85˚C
PoutPand
C
OUT Drain Eff vs Frequency at Tcase = CASE
Vdd
=
45
V,
Idq
=
0.5
A,
Pin
=
46
dBm,
Pulse
Width
=
500
usec,
Duty
Cycle
10
VDD = 45 V, IDQ = 0.5 A, PIN = 46 dBm, Pulse Width = 500µs, Duty Cycle
= 10= %
100
450
90
400
80
350
70
300
60
250
Drain Efficiency
Output Power
%
500
50
Output Power
Drain Efficiency
200
2.7
2.8
2.9
3.0
3.1
3.2
3.3
Frequency (GHz)
3.4
3.5
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGHV35400F Rev 2.0
3.6
3.7
40
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
CGHV35400F
Output Power
vs Input
Power
Figure
3. - CGHV35400F
Output
Power
vs Input Power
Vdd = 45 V, Idq = 500 mA, Pulse Width = 500 us, Duty Cycle = 10 %, Tcase = 85
VDD = 45 V, IDQ = 500 mA, Pulse WidthC = 500 µs, Duty Cycle = 10 %, Tcase = 85 °C
60
55
Output Power (dBm)
50
45
40
35
30
2.9 GHz
3.2 GHz
25
20
3.5 GHz
5
10
15
20
25
30
Input Power (dBm)
35
40
45
50
Figure 4. - CGHV35400F Drain Efficiency & Gain vs Input Power
DrainWidth
Efficiency
& Gain
vs Input
Power
VDD = 45 V, IDQ CGHV35400F
= 500 mA, Pulse
= 500
µs, Duty
Cycle
= 10 %, Tcase = 85 °C
70
16
60
14
50
12
40
Drain Efficiency - 2.9 GHz
30
Gain - 2.9 GHz
10
Drain Efficiency - 3.2 GHz
Drain Efficiency - 3.5 GHz
8
Gain - 3.2 GHz
Gain - 3.5 GHz
20
6
10
4
0
5
10
15
20
25
30
Input Power (dBm)
35
40
45
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
Gain (dB)
Drain Efficiency (%)
Vdd = 45 V, Idq = 500 mA, Pulse Width = 500 us, Duty Cycle = 10 %, Tcase = 85
C
CGHV35400F Rev 2.0
50
2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV35400F-AMP Application Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 511, OHM, +/- 1%, 1/16W, 0603
R2
RES, 5.1, OHM, +/- 1%, 1/16W, 0603
1
1
C1
CAP, 6.8pF, +/-0.25%, 250V, 0603
1
C2, C7, C8
CAP, 10.0pF, +/-1%, 250V, 0805
3
C3
CAP, 10.0pF, +/-5%, 250V, 0603
1
CAP, 470pF, 5%, 100V, 0603, X
2
C4, C9
C5
CAP, 33000 pF, 0805, 100V, X7R
1
C6
CAP, 10uF 16V TANTALUM
1
C10
CAP, 1.0uF, 100V, 10%, X7R, 1210
1
C11
CAP, 33uF, 20%, G CASE
1
C12
CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC
1
CONN, SMA, PANEL MOUNT JACK, FL
2
HEADER, RT>PLZ, 0.1CEN LK 9POS
1
J4
CONNECTOR; SMB, Straight, JACK, SMD
1
W1
CABLE, 18 AWG, 4.2
1
PCB, RO4350, 2.5 X 4.0 X 0.030
1
CGHV35400F
1
J1,J2
J3
Q1
CGHV35400F Power Dissipation De-rating Curve
Figure 5. - CGHV35400F Transient Power Dissipation De-Rating Curve
CGHV35400F Transient Power Dissipation De-Rating Curve
500
Power Dissipation (W)
400
300
Note 1
200
100
0
0
25
50
Maximum
Case
Temperature
75
100
125
150 (°C)
175
200
225
250
Maximum Case Temperature ( C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV35400F-AMP Application Circuit Outline
CGHV35400F-AMP Application Circuit Schematic
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV35400F (Package Type ­— 440210)
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV35400F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Upper Frequency
1
Power Output
Package
Value
Units
3.5
GHz
400
W
Flange
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV35400F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGHV35400F-TB
CGHV35400F-AMP
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGHV35400F Rev 2.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf