CREE CGHV27200

PRELIMINARY
CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a
ceramic/metal flange package.
Package Type
: 440162 an
d 440161
PN: CGHV27
200F and C
GHV27200P
Typical Performance Over 2.5 - 2.7 GHz
Parameter
(TC = 25˚C)
of Demonstration Amplifier
2.5 GHz
2.6 GHz
2.7 GHz
Units
Gain @ 47 dBm
15.0
16.0
16.0
dB
ACLR @ 47 dBm
-36.5
-37.5
-37.0
dBc
Drain Efficiency @ 47 dBm
29.0
28.5
29.0
%
Note:
Measured in the CGHV27200-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Features
• 2.5 - 2.7 GHz Operation
• 16 dB Gain
ober 2012
Rev 0.1 – Oct
• -37 dBc ACLR at 50 W PAVE
• 29 % Efficiency at 50 W PAVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Symbol
Rating
Units
Drain-Source Voltage
Parameter
VDSS
125
Volts
Units
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
32
mA
25˚C
Maximum Drain Current1
IDMAX
12
A
25˚C
Soldering Temperature
TS
245
˚C
Screw Torque
τ
80
in-oz
Thermal Resistance, Junction to Case3
RθJC
1.22
˚C/W
85˚C, PDISS = 96 W
Thermal Resistance, Junction to Case
RθJC
1.54
˚C/W
85˚C, PDISS = 96 W
TC
-40, +150
˚C
30 seconds
2
4
Case Operating Temperature5
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3
Measured for the CGHV27200P
4
Measured for the CGHV27200F
5
See also, the Power Dissipation De-rating Curve on Page 6
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 32 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 50 V, ID = 1.0 A
Saturated Drain Current2
IDS
24
28.8
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
125
–
–
VDC
VGS = -8 V, ID = 32 mA
DC Characteristics1
RF Characteristics (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
5
Saturated Output Power3,4
PSAT
–
300
–
W
VDD = 50 V, IDQ = 1.0 A
Pulsed Drain Efficiency3
η
–
62
–
%
VDD = 50 V, IDQ = 1.0 A, POUT = PSAT
Gain6
G
–
15.25
–
dB
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
ACLR
–
-37
–
dBc
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
η
–
30.5
–
%
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
VSWR
–
–
10 : 1
Y
No damage at all phase angles, VDD =
50 V, IDQ = 1.0 A, POUT = 200 W Pulsed
CGS
–
97
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
13.4
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.94
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
WCDMA Linearity
6
Drain Efficiency6
Output Mismatch Stress3
Dynamic Characteristics
Input Capacitance7
7
Notes:
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Pulse Width = 100 µS, Duty Cycle = 10%
4
PSAT is defined as IG = 3 mA peak.
5
Measured in CGHV27200-TB.
6
Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
7
Includes package and internal matching components.
1
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
2
CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 1. - Small Signal Gain and Return Losses vs Frequency for the
CGHV27200 measured in
CGHV27200-TB
CGHV27200F
SparametersAmplifier Circuit
VDD = 50
V,= 50
IDQV,=
Vdd
Idq1.0
= 1.0AA
25
20
15
Magnitude (dB)
10
5
0
-5
-10
S21
-15
S11
S22
-20
2.4
2.5
2.6
2.7
Frequency (GHz)
2.8
2.9
Figure 2. - Typical Pulsed Measurements vs Input Power
of the CGHV27200 measured in CGHV27200-TB Amplifier Circuit.
CGHV27200 Pulsed Measurements vs Input Power
= 50 V, IDQ = 1.0
Freq
Pulse
= us,
100
Duty
Vdd =A,
50 V,
Idq = =
1 A,2.6
FreqGHz,
= 2.6 GHz,
Pulse Width
Width = 100
Dutyµs,
Cycle
= 10 %Cycle = 10 %
350
70
Drain Efficiency
300
60
Output Power (W)
250
50
Output Power
Output Power
Gain
Drain Eff
200
40
150
30
Gain
100
20
50
10
0
5
10
15
20
25
Input Power (dBm)
30
35
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
3
CGHV27200 Rev 0.1 PRELIMINARY
40
45
Gain (dB) & Drain Efficiency (%)
VDS
2.3
0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 3. - Typical Linearity vs Output Power for the
CGHV27200 measured in CGHV27200-TB Amplifier Circuit
VDD = 50 V, IDQ = 1.0 CGHV27200
A, Freq Linearity
= 2.6vsGHz,
WCDMA 7.5 dB PAR
Output1c
Power
Vdd = 50 V, Idq = 1 A, Freq = 2.6 GHz, 1c WCDMA 7.5 dB PAR
35
10
0
Gain
Drain Efficiency
25
-10
ACLR
Drain Efficiency
Gain
20
15
-20
-30
ACLR
10
-40
5
-50
0
25
30
35
40
45
Average Output Power (dBm)
50
Adjacent Channel Power (dBc)
Gain (dB) & Drain Efficiency (%)
30
-60
Figure 4. - Typical Linearity at PAVE = 47 dBm over Frequency
of the CGHV27200 measured in CGHV27200-TB Amplifier Circuit.
at Pave
= 47 dBm over
Frequency
VDD = 50CGHV27200
V, IDQ =Linearity
1.0 A,
1c WCDMA
7.5
dB PAR
Vdd = 50 V, Idq = 1 A, 1c WCDMA 7.5 dB PAR
35
-32
Drain Efficiency
-33
25
-34
20
-35
Gain
15
-36
10
Output Power
ACP
5
Gain
-38
Drain Efficiency
0
2.35
Drain Efficiency
Gain
ACP
2.40
2.45
2.50
2.55
2.60
2.65
Frequency (GHz)
2.70
2.75
2.80
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
4
-37
Adjacent Channel Power (dBc)
Gain (dB) & Drain Efficiency (%)
30
CGHV27200 Rev 0.1 PRELIMINARY
-39
2.85
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 5. - Typical
Linearity
DPD
vs Output
CGHV27200
Linearity under
under DPD
vs Output
Power Power
VDD = 50 V, I
=
1.0
A,
Freq
=
2.6
GHz,
1c
WCDMA
Vdd
=
50
V,
Idq
=
1
A,
Freq
=
2.6
GHz,
1c
WCDMA
7.5 dB7.5
PARdB PAR
DQ
35
5
Gain - Uncorrected
Gain - Corrected
-5
Drain Efficiency - Uncorrected
Drain Efficiency - Corrected
25
-15
ACP - Uncorrected
ACP - Corrected
20
-25
15
-35
10
-45
5
-55
0
36
38
40
42
44
Average Output Power (dBm)
46
48
50
Adjacent Channel Power (dBc)
Gain (dB) & Drain Efficiency (%)
30
-65
Figure 6. - Spectral Mask at PAVE = 47 dBm with and without DPD
at Pave
47 dBm with
anddB
without
DPD
VDDCGHV27200
= 50 V,Spectral
IDQ = Mask
1.0 A,
1c =WCDMA
7.5
PAR
Vdd = 50 V, Idq = 1 A, Freq = 2.6 GHz, 1c WCDMA 7.5 dB PAR
0
-10
-20
-30
Uncorrected
-40
Corrected
-50
-60
-70
-80
2.585
2.590
2.595
2.600
2.605
2.610
2.615
Frequency (GHz)
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
5
CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 7. - Intermodulation
Distortion
Products
Output
CGHV27200 Intermodulation
Distortion
Products vsvs
Output
PowerPower
VDD = 50 V,Vdd
IDQ= 50
= V,
1.0
= 100
IdqA,
= 1Tone
A, ToneSpacing
Spacing = 100
kHz kHz
-20
Intermodulation Distortion (dBc)
-30
-40
-50
-IMD3
-60
+IMD3
-IMD5
+IMD5
-IMD7
-70
-80
+IMD7
25
30
35
40
45
50
Average Output Power (dBm)
Figure 8. - Power Dissipation Derating Curve
100
90
440161 Package
80
440162 Package
Power Dissipation (W)
70
60
50
Note 1
40
30
20
10
0
0
25
50
75
100
125
150
Maximum Case Temperature ( C)
175
200
225
250
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
6
CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
2500
7.12 - j10.19
2.23 - j0.03
2550
6.93 - j10.38
2.27 + j0.08
2600
6.61 - j10.59
2.32 + j0.18
2650
6.17 - j10.77
2.37 + j0.27
2700
5.61 - j10.87
2.41 + j0.33
Note1: VDD = 50 V, IDQ = 1.0 A. In the 440162 package.
Note2: Impedances are extracted from CGHV27200-TB demonstration
circuit and are not source and load pull data derived from transistor.
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
7
CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV27200-TB Demonstration Amplifier Circuit Schematic
CGHV27200-TB Demonstration Amplifier Circuit Outline
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
8
CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV27200-TB Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16 W, 0603, 1%, 150 OHMS
1
R2
RES, 1/16 W, 0603, 1%, 5.1 OHMS
1
C1
CAP, 6.2 pF, +/-0.25 pF, 0603, ATC600S
1
C2
CAP, 27 pF, +/-5%, 0603, ATC600S
1
CAP, 8.2 pF, +/-0.25 pF, 0603, ATC600S
3
CAP, 82.0 pF, +/-5%, 0603, ATC600S
2
C3,C9,C15
C4,C10
C5,C11
CAP, 470 pF, 5%, 100 V, 0603, X7R
2
CAP, 33000 pF, 0805, 100 V, X7R
3
C7
CAP, 10 UF, 16V, TANTALUM
1
C8
CAP, 27 pF, +/-5%, 250 V, 0603, ATC600S
1
CAP, 1.0 UF, 100 V, 10%, X7R, 1210
2
CAP, 100 UF, +/-20%, 160V, ELECTROLYTIC
2
C18
CAP, 33 UF, 20%, G CASE
1
J1,J2
CONN, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE, BLUNT POST
2
C6,C12,C16
C13,C17
C14
J3
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
1
PCB, RO4350, 0.020” THK, CGHV27200
1
2-56 SOC HD SCREW 1/4 SS
4
#2 SPLIT LOCKWASHER SS
4
CGHV27200
1
CGHV27200-TB Demonstration Amplifier Circuit
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
9
CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV27200F (Package Type —
­ 440162)
Product Dimensions CGHV27200P (Package Type —
­ 440161)
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
10
CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
11
CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf