PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P Typical Performance Over 2.5 - 2.7 GHz Parameter (TC = 25˚C) of Demonstration Amplifier 2.5 GHz 2.6 GHz 2.7 GHz Units Gain @ 47 dBm 15.0 16.0 16.0 dB ACLR @ 47 dBm -36.5 -37.5 -37.0 dBc Drain Efficiency @ 47 dBm 29.0 28.5 29.0 % Note: Measured in the CGHV27200-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. Features • 2.5 - 2.7 GHz Operation • 16 dB Gain ober 2012 Rev 0.1 – Oct • -37 dBc ACLR at 50 W PAVE • 29 % Efficiency at 50 W PAVE • High Degree of DPD Correction Can be Applied Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Symbol Rating Units Drain-Source Voltage Parameter VDSS 125 Volts Units 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 32 mA 25˚C Maximum Drain Current1 IDMAX 12 A 25˚C Soldering Temperature TS 245 ˚C Screw Torque τ 80 in-oz Thermal Resistance, Junction to Case3 RθJC 1.22 ˚C/W 85˚C, PDISS = 96 W Thermal Resistance, Junction to Case RθJC 1.54 ˚C/W 85˚C, PDISS = 96 W TC -40, +150 ˚C 30 seconds 2 4 Case Operating Temperature5 Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV27200P 4 Measured for the CGHV27200F 5 See also, the Power Dissipation De-rating Curve on Page 6 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 32 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 1.0 A Saturated Drain Current2 IDS 24 28.8 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 125 – – VDC VGS = -8 V, ID = 32 mA DC Characteristics1 RF Characteristics (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted) 5 Saturated Output Power3,4 PSAT – 300 – W VDD = 50 V, IDQ = 1.0 A Pulsed Drain Efficiency3 η – 62 – % VDD = 50 V, IDQ = 1.0 A, POUT = PSAT Gain6 G – 15.25 – dB VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm ACLR – -37 – dBc VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm η – 30.5 – % VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 1.0 A, POUT = 200 W Pulsed CGS – 97 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 13.4 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.94 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz WCDMA Linearity 6 Drain Efficiency6 Output Mismatch Stress3 Dynamic Characteristics Input Capacitance7 7 Notes: Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 100 µS, Duty Cycle = 10% 4 PSAT is defined as IG = 3 mA peak. 5 Measured in CGHV27200-TB. 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. 7 Includes package and internal matching components. 1 Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV27200 Rev 0.1 PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - Small Signal Gain and Return Losses vs Frequency for the CGHV27200 measured in CGHV27200-TB CGHV27200F SparametersAmplifier Circuit VDD = 50 V,= 50 IDQV,= Vdd Idq1.0 = 1.0AA 25 20 15 Magnitude (dB) 10 5 0 -5 -10 S21 -15 S11 S22 -20 2.4 2.5 2.6 2.7 Frequency (GHz) 2.8 2.9 Figure 2. - Typical Pulsed Measurements vs Input Power of the CGHV27200 measured in CGHV27200-TB Amplifier Circuit. CGHV27200 Pulsed Measurements vs Input Power = 50 V, IDQ = 1.0 Freq Pulse = us, 100 Duty Vdd =A, 50 V, Idq = = 1 A,2.6 FreqGHz, = 2.6 GHz, Pulse Width Width = 100 Dutyµs, Cycle = 10 %Cycle = 10 % 350 70 Drain Efficiency 300 60 Output Power (W) 250 50 Output Power Output Power Gain Drain Eff 200 40 150 30 Gain 100 20 50 10 0 5 10 15 20 25 Input Power (dBm) 30 35 Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV27200 Rev 0.1 PRELIMINARY 40 45 Gain (dB) & Drain Efficiency (%) VDS 2.3 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3. - Typical Linearity vs Output Power for the CGHV27200 measured in CGHV27200-TB Amplifier Circuit VDD = 50 V, IDQ = 1.0 CGHV27200 A, Freq Linearity = 2.6vsGHz, WCDMA 7.5 dB PAR Output1c Power Vdd = 50 V, Idq = 1 A, Freq = 2.6 GHz, 1c WCDMA 7.5 dB PAR 35 10 0 Gain Drain Efficiency 25 -10 ACLR Drain Efficiency Gain 20 15 -20 -30 ACLR 10 -40 5 -50 0 25 30 35 40 45 Average Output Power (dBm) 50 Adjacent Channel Power (dBc) Gain (dB) & Drain Efficiency (%) 30 -60 Figure 4. - Typical Linearity at PAVE = 47 dBm over Frequency of the CGHV27200 measured in CGHV27200-TB Amplifier Circuit. at Pave = 47 dBm over Frequency VDD = 50CGHV27200 V, IDQ =Linearity 1.0 A, 1c WCDMA 7.5 dB PAR Vdd = 50 V, Idq = 1 A, 1c WCDMA 7.5 dB PAR 35 -32 Drain Efficiency -33 25 -34 20 -35 Gain 15 -36 10 Output Power ACP 5 Gain -38 Drain Efficiency 0 2.35 Drain Efficiency Gain ACP 2.40 2.45 2.50 2.55 2.60 2.65 Frequency (GHz) 2.70 2.75 2.80 Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 -37 Adjacent Channel Power (dBc) Gain (dB) & Drain Efficiency (%) 30 CGHV27200 Rev 0.1 PRELIMINARY -39 2.85 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 5. - Typical Linearity DPD vs Output CGHV27200 Linearity under under DPD vs Output Power Power VDD = 50 V, I = 1.0 A, Freq = 2.6 GHz, 1c WCDMA Vdd = 50 V, Idq = 1 A, Freq = 2.6 GHz, 1c WCDMA 7.5 dB7.5 PARdB PAR DQ 35 5 Gain - Uncorrected Gain - Corrected -5 Drain Efficiency - Uncorrected Drain Efficiency - Corrected 25 -15 ACP - Uncorrected ACP - Corrected 20 -25 15 -35 10 -45 5 -55 0 36 38 40 42 44 Average Output Power (dBm) 46 48 50 Adjacent Channel Power (dBc) Gain (dB) & Drain Efficiency (%) 30 -65 Figure 6. - Spectral Mask at PAVE = 47 dBm with and without DPD at Pave 47 dBm with anddB without DPD VDDCGHV27200 = 50 V,Spectral IDQ = Mask 1.0 A, 1c =WCDMA 7.5 PAR Vdd = 50 V, Idq = 1 A, Freq = 2.6 GHz, 1c WCDMA 7.5 dB PAR 0 -10 -20 -30 Uncorrected -40 Corrected -50 -60 -70 -80 2.585 2.590 2.595 2.600 2.605 2.610 2.615 Frequency (GHz) Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV27200 Rev 0.1 PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 7. - Intermodulation Distortion Products Output CGHV27200 Intermodulation Distortion Products vsvs Output PowerPower VDD = 50 V,Vdd IDQ= 50 = V, 1.0 = 100 IdqA, = 1Tone A, ToneSpacing Spacing = 100 kHz kHz -20 Intermodulation Distortion (dBc) -30 -40 -50 -IMD3 -60 +IMD3 -IMD5 +IMD5 -IMD7 -70 -80 +IMD7 25 30 35 40 45 50 Average Output Power (dBm) Figure 8. - Power Dissipation Derating Curve 100 90 440161 Package 80 440162 Package Power Dissipation (W) 70 60 50 Note 1 40 30 20 10 0 0 25 50 75 100 125 150 Maximum Case Temperature ( C) 175 200 225 250 Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV27200 Rev 0.1 PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2500 7.12 - j10.19 2.23 - j0.03 2550 6.93 - j10.38 2.27 + j0.08 2600 6.61 - j10.59 2.32 + j0.18 2650 6.17 - j10.77 2.37 + j0.27 2700 5.61 - j10.87 2.41 + j0.33 Note1: VDD = 50 V, IDQ = 1.0 A. In the 440162 package. Note2: Impedances are extracted from CGHV27200-TB demonstration circuit and are not source and load pull data derived from transistor. Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV27200 Rev 0.1 PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27200-TB Demonstration Amplifier Circuit Schematic CGHV27200-TB Demonstration Amplifier Circuit Outline Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV27200 Rev 0.1 PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27200-TB Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16 W, 0603, 1%, 150 OHMS 1 R2 RES, 1/16 W, 0603, 1%, 5.1 OHMS 1 C1 CAP, 6.2 pF, +/-0.25 pF, 0603, ATC600S 1 C2 CAP, 27 pF, +/-5%, 0603, ATC600S 1 CAP, 8.2 pF, +/-0.25 pF, 0603, ATC600S 3 CAP, 82.0 pF, +/-5%, 0603, ATC600S 2 C3,C9,C15 C4,C10 C5,C11 CAP, 470 pF, 5%, 100 V, 0603, X7R 2 CAP, 33000 pF, 0805, 100 V, X7R 3 C7 CAP, 10 UF, 16V, TANTALUM 1 C8 CAP, 27 pF, +/-5%, 250 V, 0603, ATC600S 1 CAP, 1.0 UF, 100 V, 10%, X7R, 1210 2 CAP, 100 UF, +/-20%, 160V, ELECTROLYTIC 2 C18 CAP, 33 UF, 20%, G CASE 1 J1,J2 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 C6,C12,C16 C13,C17 C14 J3 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 1 PCB, RO4350, 0.020” THK, CGHV27200 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CGHV27200 1 CGHV27200-TB Demonstration Amplifier Circuit Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV27200 Rev 0.1 PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV27200F (Package Type — 440162) Product Dimensions CGHV27200P (Package Type — 440161) Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV27200 Rev 0.1 PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV27200 Rev 0.1 PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf