CGH35030F, 30W, 3300-3900MHz, GaN HEMT by Cree

CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH35030F ideal for 3.3-3.9GHz WiMAX and BWA amplifier
applications. The transistor is supplied in a ceramic/metal flange package.
Package Type
: 440166
PN: CGH3503
0F
Typical Performance Over 3.3-3.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
3.8 GHz
Units
Small Signal Gain
11.6
11.8
11.8
12.0
12.4
13.0
dB
EVM at PAVE = 23 dBm
2.42
2.26
2.09
2.11
2.13
2.38
%
EVM at PAVE = 36 dBm
1.97
1.74
1.68
1.79
2.01
2.37
%
Drain Efficiency @ 36 dBm
20.8
21.9
23.5
25.4
27.4
29.1
%
Input Return Loss
12.3
8.5
6.1
5.4
6.1
9.0
dB
Note:
Measured in the CGH35030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
15
Rev 4.0 – May 20
Features
•
3.3 - 3.9 GHz Operation
•
30 W Peak Power Capability
•
12 dB Small Signal Gain
•
4.0 W PAVE at < 2.0 % EVM
•
25 % Drain Efficiency at 4 W PAVE
•
WiMAX Fixed Access 802.16-2004 OFDM
•
WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/RF
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Units
Drain-Source Voltage
VDSS
84
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Power Dissipation
PDISS
14
Watts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
4.0
mA
25˚C
Maximum Drain Current
IDMAX
3.0
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
60
in-oz
RθJC
4.8
˚C/W
TC
-40, +150
˚C
1
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature
3
85˚C
Notes:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at www.cree.com/RF/Documnet-Library
3
Measured for the CGH35030F at PDISS = 14 W
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 120 mA
Saturated Drain Current
IDS
5.8
7.0
–
A
VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 7.2 mA
DC Characteristics1
RF Characteristics
2,3
(TC = 25˚C, F0 = 3.5 GHz unless otherwise noted)
GSS
10
11.5
–
dB
VDD = 28 V, IDQ = 120 mA,
PAVE = 23 dBm
η
20
25
–
%
VDD = 28 V, IDQ = 120 mA,
PAVE = 36 dBm
Back-Off Error Vector Magnitude
EVM1
–
2.5
–
%
VDD = 28 V, IDQ = 120 mA,
PAVE = 23 dBm
Error Vector Magnitude
EVM2
–
2.0
–
%
VDD = 28 V, IDQ = 120 mA,
PAVE = 36 dBm
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 120 mA
Input Capacitance
CGS
–
9.0
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
2.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.4
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Small Signal Gain
Drain Efficiency4
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Measured in the CGH35030F-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = POUT / PDC.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Figure 1.- Gain and Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH35030F-AMP1
S21_V3_120 mA
VDD = 28 V, IDQ = 120 mA
14
8
12
S21 (dB)
6
S21
4
11
2
10
0
9
-2
8
-4
7
-6
S11
6
-8
5
-10
4
-12
3
-14
2
S21
-16
1
S11
-18
0
S11 (dB)
13
-20
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
Frequency (GHz)
3.8
3.9
4
4.1
4.2
Figure 2.- Typical EVM and Efficiency at 23 dBm and 36 dBm vs Frequency measured
CGH35030
in Broadband Amplifier Circuit CGH35030F-AMP
6.0
36%
EVM @ 23 dBm
5.5
33%
EVM @ 36 dBm
5.0
30%
Efficiency @ 36 dBm
4.5
27%
Efficiency
24%
3.5
21%
3.0
18%
2.5
15%
2.0
Efficiency
EVM (%)
4.0
12%
EVM
1.5
9%
1.0
6%
0.5
3%
0.0
0%
3.3
3.4
3.5
3.6
Frequency (GHz)
3.7
3.8
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Figure 3.- Gain and Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH35030F-AMP
VDD = 28 V, IDQ = 120 mA
CGH35030F
15
30%
14
28%
13
26%
12
24%
22%
Gain
20%
Gain (dB)
9
18%
Efficiency
8
16%
7
14%
6
12%
5
10%
4
Gain
8%
3
Drain Efficiency
6%
2
4%
1
2%
0
Drain Efficiency
11
10
0%
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
Output Power (dBm)
Figure 4.- Typical EVM and Efficiency vs Frequency measured
CGH35030F
in Broadband
Amplifier Circuit CGH35030F-AMP
5.2
26%
4.8
24%
4.4
EVM
22%
4.0
Drain Efficiency
20%
18%
Efficiency
3.2
16%
2.8
14%
2.4
12%
2.0
10%
1.6
8%
EVM
1.2
Drain Efficiency
EVM (%)
3.6
6%
0.8
4%
0.4
2%
0.0
0%
20
21
22
23
24
25
26
27
28
29
30
31
Output Power (dBm)
32
33
34
35
36
37
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
K Factor
MAG (dB)
Figure 5.- Simulated Maximum Available Gain and K Factor of the CGH35030F
VDD = 28 V, IDQ = 120 mA
Typical Noise Performance
Figure 6.- Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH35030
VDD = 28 V, IDQ = 120 mA
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
3300
3.3 - j9.2
13.4 - j11.4
3400
3.9 - j8.6
12.2 - j10.4
3500
4.5 - j8.5
11.1 - j9.4
3600
4.7 - j8.8
10.2 - j8.2
3700
4.3 - j9.0
9.5 - j7.1
Note 1. VDD = 28V, IDQ = 120 mA in the 440166 package.
Note 2. Impedences are extracted from the CGH35030-AMP demonstration amplifier
and are not source and load pull date derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH35030F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
R1
Description
Qty
RES,1/16W,0603,1%,100 OHMS
1
R2
RES,1/16W,0603,1%,47 OHMS
1
C6
CAP, 470PF, 10%,100V, 0603
1
C17
CAP, 33 UF, 20%, G CASE
1
C16
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C8
CAP 10UF 16V TANTALUM
1
C13
CAP, 100.0pF, +/-5%, 0603
1
C1
CAP, 0.8pF, +/-0.05pF, 0603, ATC
1
C2,C9,C10
CAP, 0.7pF, +/-0.05pF, 0603, ATC
3
C4,C11
CAP, 10.0pF,+/-5%, 0603, ATC
2
C5,C12
CAP, 39pF, +/-5%, 0603, ATC
2
C7,C14
CAP,33000PF, 0805,100V, X7R
2
CONN SMA STR PANEL JACK RECP
1
J2
HEADER RT>PLZ.1CEN LK 2 POS
1
J1
J3,J4
HEADER RT>PLZ .1CEN LK 5POS
1
-
PCB, RO4350B, Er = 3.48, h = 20 mil
1
-
CGH35030F
1
CGH35030F-AMP Demonstration Amplifier Circuit
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH35030F-AMP Demonstration Amplifier Circuit Schematic
CGH35030F-AMP Demonstration Amplifier Circuit Outline
3-000538 REV2
CGH35030F-TB
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH35030
(Small Signal, VDS = 28 V, IDQ = 120 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.909
-152.96
11.93
92.31
0.023
6.73
0.393
-144.30
600 MHz
0.907
-158.23
10.00
87.72
0.023
3.05
0.401
-147.24
700 MHz
0.907
-162.20
8.59
83.77
0.023
0.01
0.410
-149.13
800 MHz
0.907
-165.34
7.51
80.24
0.023
-2.59
0.420
-150.43
900 MHz
0.907
-167.92
6.66
76.99
0.023
-4.90
0.431
-151.37
1.0 GHz
0.908
-170.10
5.98
73.96
0.023
-6.97
0.442
-152.11
1.1 GHz
0.908
-172.00
5.41
71.09
0.022
-8.87
0.454
-152.74
1.2 GHz
0.909
-173.67
4.94
68.35
0.022
-10.62
0.466
-153.31
1.3 GHz
0.910
-175.19
4.53
65.71
0.022
-12.23
0.478
-153.87
1.4 GHz
0.911
-176.58
4.18
63.16
0.022
-13.73
0.490
-154.44
1.5 GHz
0.912
-177.86
3.88
60.70
0.021
-15.13
0.503
-155.02
1.6 GHz
0.913
-179.07
3.61
58.30
0.021
-16.42
0.515
-155.64
1.7 GHz
0.914
179.79
3.38
55.96
0.020
-17.62
0.528
-156.28
1.8 GHz
0.915
178.71
3.17
53.68
0.020
-18.72
0.540
-156.96
1.9 GHz
0.916
177.66
2.98
51.45
0.020
-19.73
0.552
-157.67
2.0 GHz
0.917
176.65
2.81
49.27
0.019
-20.64
0.564
-158.41
2.1 GHz
0.918
175.67
2.66
47.14
0.019
-21.45
0.576
-159.17
2.2 GHz
0.919
174.72
2.52
45.05
0.018
-22.17
0.587
-159.97
2.3 GHz
0.921
173.78
2.39
43.00
0.018
-22.78
0.598
-160.79
2.4 GHz
0.922
172.86
2.27
40.99
0.017
-23.28
0.609
-161.62
2.5 GHz
0.923
171.95
2.16
39.02
0.017
-23.68
0.619
-162.48
2.6 GHz
0.924
171.05
2.06
37.08
0.016
-23.96
0.629
-163.36
2.7 GHz
0.925
170.16
1.97
35.18
0.016
-24.11
0.639
-164.24
2.8 GHz
0.926
169.28
1.89
33.31
0.015
-24.14
0.648
-165.15
2.9 GHz
0.927
168.41
1.81
31.47
0.015
-24.04
0.657
-166.06
3.0 GHz
0.927
167.53
1.74
29.66
0.015
-23.79
0.666
-166.98
3.2 GHz
0.929
165.79
1.61
26.12
0.014
-22.85
0.682
-168.84
3.4 GHz
0.931
164.05
1.49
22.69
0.013
-21.25
0.697
-170.73
3.6 GHz
0.932
162.30
1.39
19.35
0.012
-18.94
0.711
-172.64
3.8 GHz
0.933
160.54
1.30
16.10
0.012
-15.90
0.724
-174.56
4.0 GHz
0.934
158.76
1.23
12.92
0.011
-12.15
0.735
-176.49
4.2 GHz
0.935
156.96
1.16
9.80
0.011
-7.76
0.746
-178.43
4.4 GHz
0.936
155.14
1.10
6.75
0.011
-2.91
0.755
179.63
4.6 GHz
0.937
153.27
1.04
3.74
0.011
2.16
0.764
177.67
4.8 GHz
0.937
151.38
0.99
0.78
0.011
7.15
0.772
175.70
5.0 GHz
0.938
149.44
0.95
-2.15
0.012
11.82
0.779
173.71
5.2 GHz
0.938
147.46
0.91
-5.05
0.013
15.96
0.786
171.71
5.4 GHz
0.938
145.42
0.88
-7.92
0.014
19.45
0.791
169.69
5.6 GHz
0.938
143.34
0.85
-10.79
0.015
22.27
0.796
167.65
5.8 GHz
0.938
141.19
0.82
-13.65
0.016
24.42
0.801
165.58
6.0 GHz
0.937
138.98
0.79
-16.50
0.017
25.96
0.805
163.48
To download the s-parameters in s2p format, go to the CGH35030F Product Page and click on the documentation tab.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH35030F (Package Type ­— 440166)
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH35030F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH35030-TB
CGH35030F-AMP
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH35030F Rev 4.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf