CGH27015, 15W, 2400-2900MHz, GaN HEMT by Cree

CGH27015
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed
specifically for high efficiency, high gain and wide bandwidth capabilities, which makes
the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier
applications. The unmatched transistor is available in both screw-down, flange and
solder-down, pill packages.
Package Type
: 440166 and
440196
PN: CGH2701
5F and CGH27
015P
Typical Performance 2.3-2.7 GHz (TC = 25˚C)
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Units
Small Signal Gain
16.9
16.0
15.1
14.6
14.3
dB
EVM at PAVE = 33 dBm
1.69
1.51
1.50
1.66
1.93
%
Drain Efficiency at PAVE = 33 dBm
27.1
27.8
28.4
28.0
28.0
dB
Note:
Measured in the CGH27015F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
VHF - 3.0 GHz Operation
•
15 W Peak Power Capability
•
14.5 dB Small Signal Gain
•
2 W PAVE < 2.0 % EVM
•
28 % Efficiency at 2 W Average Power
•
Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
•
Designed for WiMAX Mobile Access 802.16e OFDMA Applications
15
Rev 4.0 – May 20
•
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDSS
84
Volts
Units
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
4.0
mA
25˚C
Maximum Drain Current
IDMAX
1.5
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
60
in-oz
RθJC
8.0
˚C/W
TC
-40, +150
˚C
1
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature3
85˚C
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH27015F at PDISS = 14W.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 100 mA
Saturated Drain Current
IDS
2.9
3.5
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 3.6 mA
DC Characteristics1
RF Characteristics
2,3
(TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Small Signal Gain
GSS
13
15
–
dB
VDD = 28 V, IDQ = 100 mA
η
20
28
–
%
VDD = 28 V, IDQ = 100 mA,
PAVE = 33 dBm
Error Vector Magnitude
EVM
–
2.0
–
%
VDD = 28 V, IDQ = 100 mA,
PAVE = 33 dBm
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 100 mA,
PAVE = 33 dBm OFDM PAVE
Input Capacitance
CGS
–
4.5
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
1.3
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.2
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency4
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Measured in the CGH27015F-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = POUT / PDC.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Typical Performance Data
Performance of CGH27015 in Broadband Amplifier Circuit
VDD = 28 V, IDQ = 100 mA
22
6
20
4
S21
2
16
0
14
-2
12
-4
S11
10
-6
8
S11 (dB)
S21 (dB)
18
-8
S21
6
-10
S11
4
-12
2
-14
0
-16
1.5 1.6 1.7 1.8 1.9
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
Frequency (GHz)
3
3.1 3.2 3.3 3.4 3.5
Typical EVM and Efficiency at 24dB and 33 dB vs Frequency of
CGH27015 in Broadband Amplifier Circuit
4.0
30%
3.2
24%
2.8
21%
2.4
EVM (%)
27%
Drain
Efficiency
18%
EVM @ 24dB
2.0
15%
1.6
12%
EVM @ 33dB
1.2
9%
EVM @ 24 dB
0.8
Efficiency
3.6
6%
EVM @ 33 dB
0.4
3%
Efficiency
0.0
0%
2.3
2.4
2.5
Frequency (GHz)
2.6
2.7
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst,
Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Typical Performance Data
Typical EVM and Efficiency of CGH27015 in Broadband Amplifier Circuit at 2.5 GHz
F=2.5 GHz, 802.16-2004 OFDM, P/A=9.8 dB
4.8
36%
4.4
33%
30%
EVM
3.6
Efficiency
3.2
EVM (%)
27%
Drain
Efficiency
24%
2.8
21%
2.4
18%
2.0
15%
1.6
12%
1.2
Drain Efficiency
4.0
9%
EVM
0.8
6%
0.4
3%
0.0
0%
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Average Output Power (dBm)
Note:
Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst,
Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH27015 Rev 4.0
K Factor
MAG (dB)
Simulated Maximum Available Gain and K Factor of the CGH27015F
VDD = 28 V, IDQ = 100 mA
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH27015
VDD = 28 V, IDQ = 100 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
2300
17.8 - j1.5
16.8 - j1.7
2400
20.3 - j4.0
16.9 - j0.8
2500
20.6 - j7.9
17.2 + j0.2
2600
18.2 - j11.3
17.7 + j1.3
2700
14.6 - j12.6
19.1 + j2.4
Note 1. VDD = 28V, IDQ = 200mA in the 440166 package.
Note 2. Impedances are extracted from the CGH27015-AMP demonstration amplifier
and are not source and load pull data derived from the transistor.
CGH27015 Power Dissipation De-rating Curve
CGH40010F CW Power Dissipation De-rating Curve
16
14
Power Dissipation (W)
12
10
8
Note 1
6
4
2
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
CGH27015-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
R1,R2
Description
Qty
RES,1/16W,0603,1%,0 OHMS
2
R4
RES,1/16W,0603,1%,100 OHMS
1
R3
RES,1/16W,0603,1%,22.6 OHMS
1
C6
CAP, 470PF, 5%,100V, 0603
1
C17
CAP, 33 UF, 20%, G CASE
1
C16
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
1
C8
CAP 10UF 16V TANTALUM
C14
CAP, 100.0pF, +/-5%, 0603
1
C4
CAP, 15pF, +/-5%, 0603
1
C1
CAP, 1.8pF, +/-0.1pF, 0603
1
C2, C10, C11
CAP, 2.0pF, +/-0.1pF, 0603
3
C5,C13
CAP, 39pF, +/-5%, 0603
2
C7,C15
CAP,33000PF, 0805,100V, X7R
2
J3,J4
CONN SMA STR PANEL JACK RECP
1
J2
HEADER RT>PLZ.1CEN LK 2 POS
1
J1
HEADER RT>PLZ .1CEN LK 5POS
1
-
PCB, RO4350B, Er = 3.48, h = 20 mil
1
-
CGH27015F or CGH27015P
1
CGH27015-AMP Demonstration Amplifier Circuit
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
CGH27015-AMP Demonstration Amplifier Circuit Schematic
CGH27015-AMP Demonstration Amplifier Circuit Outline
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Typical Package S-Parameters for CGH27015
(Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.909
-124.41
17.41
107.81
0.026
21.06
0.335
-93.73
600 MHz
0.902
-134.04
15.04
101.48
0.027
15.39
0.322
-101.61
700 MHz
0.898
-141.62
13.18
96.16
0.028
10.74
0.315
-107.78
800 MHz
0.894
-147.78
11.71
91.54
0.028
6.79
0.312
-112.73
900 MHz
0.892
-152.91
10.51
87.43
0.028
3.35
0.312
-116.77
1.0 GHz
0.890
-157.30
9.53
83.68
0.028
0.28
0.314
-120.15
1.1 GHz
0.889
-161.12
8.71
80.20
0.028
-2.51
0.318
-123.04
1.2 GHz
0.889
-164.51
8.01
76.95
0.028
-5.07
0.322
-125.57
1.3 GHz
0.888
-167.56
7.41
73.86
0.028
-7.45
0.328
-127.82
1.4 GHz
0.888
-170.34
6.89
70.91
0.028
-9.69
0.335
-129.87
1.5 GHz
0.888
-172.91
6.44
68.07
0.028
-11.81
0.342
-131.77
1.6 GHz
0.888
-175.30
6.04
65.32
0.028
-13.82
0.349
-133.56
1.7 GHz
0.888
-177.55
5.69
62.65
0.027
-15.74
0.357
-135.25
1.8 GHz
0.888
-179.68
5.37
60.05
0.027
-17.58
0.364
-136.89
1.9 GHz
0.888
178.29
5.09
57.50
0.027
-19.34
0.373
-138.48
2.0 GHz
0.888
176.34
4.83
55.01
0.027
-21.04
0.381
-140.03
2.1 GHz
0.889
174.45
4.60
52.56
0.026
-22.69
0.389
-141.55
2.2 GHz
0.889
172.63
4.39
50.14
0.026
-24.27
0.397
-143.06
2.3 GHz
0.889
170.84
4.20
47.76
0.026
-25.80
0.405
-144.56
2.4 GHz
0.889
169.10
4.02
45.41
0.025
-27.28
0.413
-146.04
2.5 GHz
0.890
167.39
3.86
43.09
0.025
-28.70
0.421
-147.52
2.6 GHz
0.890
165.71
3.71
40.79
0.025
-30.08
0.429
-149.00
2.7 GHz
0.891
164.04
3.57
38.51
0.024
-31.41
0.437
-150.48
2.8 GHz
0.891
162.39
3.44
36.26
0.024
-32.69
0.445
-151.95
2.9 GHz
0.891
160.76
3.32
34.01
0.024
-33.92
0.452
-153.43
3.0 GHz
0.892
159.13
3.21
31.79
0.023
-35.10
0.459
-154.92
3.2 GHz
0.892
155.89
3.00
27.38
0.023
-37.31
0.473
-157.90
3.4 GHz
0.893
152.65
2.83
23.00
0.022
-39.32
0.486
-160.90
3.6 GHz
0.893
149.39
2.67
18.66
0.021
-41.09
0.499
-163.93
3.8 GHz
0.894
146.09
2.54
14.34
0.020
-42.63
0.510
-166.99
4.0 GHz
0.894
142.74
2.41
10.02
0.020
-43.90
0.521
-170.10
4.2 GHz
0.895
139.33
2.31
5.70
0.019
-44.88
0.530
-173.24
4.4 GHz
0.895
135.84
2.21
1.37
0.018
-45.53
0.539
-176.45
4.6 GHz
0.895
132.26
2.12
-2.98
0.018
-45.84
0.547
-179.71
4.8 GHz
0.895
128.59
2.04
-7.36
0.017
-45.78
0.554
176.97
5.0 GHz
0.895
124.80
1.97
-11.79
0.016
-45.32
0.561
173.56
5.2 GHz
0.895
120.90
1.91
-16.27
0.016
-44.47
0.566
170.07
5.4 GHz
0.895
116.87
1.85
-20.81
0.016
-43.25
0.571
166.48
5.6 GHz
0.895
112.70
1.80
-25.41
0.015
-41.72
0.575
162.78
5.8 GHz
0.895
108.38
1.75
-30.10
0.015
-39.97
0.579
158.96
6.0 GHz
0.895
103.92
1.70
-34.88
0.016
-38.13
0.581
155.00
To download the s-parameters in s2p format, go to the CGH27015 Product Page and click on the documentation tab.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Product Dimensions CGH27015F (Package Type ­— 440166)
Product Dimensions CGH27015P (Package Type —
­ 440196)
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Product Ordering Information
Order Number
Description
Unit of Measure
CGH27015F
GaN HEMT
Each
CGH27015P
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH27015F-TB
CGH27015F-AMP
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH27015 Rev 4.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless