CGH35015, 15W, 3300-3900MHz, GaN HEMT by Cree

CGH35015
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed
specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities, which makes the
CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The
transistor is available in both screw-down, flange and solder-down, pill packages.
Package Type
: 440166 and
440196
PN: CGH3501
5F and CGH35
015P
Typical Performance Over 3.3-3.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
3.8 GHz
Units
Small Signal Gain
13.6
12.8
12.3
12.2
12.3
12.8
dB
EVM at PAVE = 24 dBm
2.71
2.31
2.1
2.12
2.54
3.04
dBm
EVM at PAVE = 33 dBm
2.63
2.29
1.93
1.70
1.70
2.14
dBm
Drain Efficiency at PAVE = 33 dBm
24.0
25.5
26.1
25.6
23.8
2.38
%
Note:
Measured in the CGH35015F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
3.3 - 3.9 GHz Operation
•
15 W Peak Power Capability
•
12 dB Small Signal Gain
•
2.0 W PAVE at < 2.0 % EVM
•
26 % Efficiency at 2 W Average Power
•
WiMAX Fixed Access 802.16-2004 OFDM
•
WiMAX Mobile Access 802.16e OFDMA
15
Rev 4.0 – May 20
•
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Power Dissipation
PDISS
7
Watts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
4.0
mA
25˚C
Maximum Drain Current1
IDMAX
1.5
A
25˚C
Soldering Temperature
TS
245
˚C
Screw Torque
τ
60
in-oz
RθJC
8.0
˚C/W
TC
-40, +150
˚C
2
Thermal Resistance, Junction to Case3
Case Operating Temperature3
85˚C
Note:
Current limit for long term, reliable operation.
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH35015F at PDISS = 7 W.
1
2
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 60 mA
Saturated Drain Current
IDS
2.9
3.5
–
A
VDS = 6.0 V, VGS = 2.0 V
V(BR)DSS
120
–
–
VDC
VGS = -8 V, ID = 3.6 mA
DC Characteristics1
Drain-Source Breakdown Voltage
RF Characteristics
2,3
(TC = 25˚C, F0 = 3.5 GHz unless otherwise noted)
Small Signal Gain
GSS
10.5
12
–
dB
VDD = 28 V, IDQ = 100 mA
η
22
26
–
%
VDD = 28 V, IDQ = 100 mA, PAVE = 2.0 W
Back-Off Error Vector Magnitude
EVM1
–
2.5
–
%
VDD = 28 V, IDQ = 100 mA,
PAVE = 18 dBm
Error Vector Magnitude
EVM2
–
2.5
–
%
VDD = 28 V, IDQ = 100 mA, PAVE = 2.0 W
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 100 mA,
PAVE = 2.0 W
Input Capacitance
CGS
–
4.5
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
1.3
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.2
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency4
Dynamic Characteristics
Notes:
Measured on wafer prior to packaging.
Measured in the CGH35015F-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = POUT / PDC.
1
2
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Figure 1.- Small Signal S-Parameters vs Frequency measured in the CGH35015F-AMP
VDD = 28 V, IDQ = 100 mA
16
6
3
12
0
10
-3
8
-6
6
-9
S11 (dB)
S21 (dB)
S21
14
-12
4
S11
S21
2
-15
S11
0
-18
2.5 2.6 2.7 2.8 2.9
3
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9
4
4.1 4.2 4.3 4.4
Frequency (GHz)
Figure 2.- Typical EVM and Efficiency versus Frequency measured in the CGH35015F-AMP
VDD = 28 V, IDQ = 100
mA,
OFDM, PAR=9.8 dB
EVM
and 802.16-2004
Efficiency vs. Freq.
6.0
30%
5.0
25%
Drain
Efficiency
3.0
15%
EVM @
24 dBm
2.0
Efficiency
20%
EVM (%)
4.0
10%
EVM @
33 dBm
EVM @ 24dBm
1.0
5%
EVM @ 33dBm
Eff. @ 33dBm
0.0
0%
3.3
3.4
3.4
3.5
3.5
3.6
3.6
3.7
3.7
3.8
3.8
Frequency (GHz)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst,
Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Figure 3.- Drain Efficiency and Gain vs Output Power measured in the CGH35015F-AMP
VDD = 28 V, IDQ = 100 mA, 802.16-2004 OFDM, PAR = 9.8 dB
16
32%
14
28%
24%
10
20%
8
16%
Efficiency
6
12%
4
8%
Gain
2
Drain Efficiency
Gain (dB)
Gain
12
4%
Drain Efficiency
0
0%
16
18
20
22
24
26
28
30
32
34
Output Power (dBm)
Figure 4.- Typical EVM and Efficiency versus Power Output measured in the CGH35015F-AMP
VDD = 28 V, IDQ = 100 mA, 802.16-2004 OFDM, PAR=9.8 dB
30%
5.0
4.5
27%
EVM
4.0
24%
Efficiency
21%
3.5
Efficiency
18%
2.5
15%
2.0
12%
1.5
9%
EVM
1.0
Efficiency
EVM (%)
3.0
6%
0.5
3%
0.0
0%
16
18
20
22
24
26
Output Power (dBm)
28
30
32
34
Note:
Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst,
Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
K Factor
MAG (dB)
Figure 5.- Simulated Maximum Available Gain and K Factor of the CGH35015
= 28 V, IDQ = 100atmA
GMAX and KVof
Idq of 100mA
DD CGH35015F
Typical Noise Performance
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH35015 Rev 4.0
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Figure 6.- Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH35015
VDD = 28 V, IDQ = 100 mA
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
3300
13.0 - j5.6
13.2 - j2.8
3400
17.2 - j6.0
13.2 - j2.8
3500
20.8 - j9.9
13.1 - j2.9
3600
20.1 - j15.8
13.1 - j3.3
3700
15.7 - j19.0
12.3 - j3.8
Note 1. VDD = 28V, IDQ = 115 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH35015F-AMP demonstration amplifier
and are not source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH35015F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
C1,C2
CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S
2
C10,C11
CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S
2
C4,C12
CAP, 10.0pF, +/-5%, 0603, ATC 600S
1
C5,C13
CAP, 39 PF±5%, 0603, ATC 600S
2
C14
CAP, 100 PF±5%, 0603, ATC 600S
1
C6
CAP, 470 PF ±10%,100 V, 0603
1
C7,C15
CAP, 33000PF, 100V, 0805, X7R
2
C8
CAP, 10UF, 16V, SMT, TANTALUM (240096)
1
C16
CAP, 1.0UF ±10%, 100V, 1210, X7R
1
C17
CAP, 33UF, 100V, ELECT, FK, SMD
1
R3
RES, 1/16W, 0603, 22 Ohms ≤5%
1
R4
RES, 1/16W, 0603, 100 Ohms ≤5%
1
J1
5-PIN, MOLEX, MALE, CONNECTOR
1
J2
2-PIN, MOLEX, MALE, CONNECTOR
1
SMA, FEMALE, CONNECTOR
2
-
PCB, RO4350B, Er = 3.48, h = 20 mil
1
-
CGH35015F or CGH35015P
1
J3,J4
CGH35015F-AMP Demonstration Amplifier Circuit
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH35015-AMP Demonstration Amplifier Circuit Schematic
CGH35015-AMP Demonstration Amplifier Circuit Outline
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH35015
(Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.909
-124.41
17.41
107.81
0.026
21.06
0.335
-93.73
600 MHz
0.902
-134.04
15.04
101.48
0.027
15.39
0.322
-101.61
700 MHz
0.898
-141.62
13.18
96.16
0.028
10.74
0.315
-107.78
800 MHz
0.894
-147.78
11.71
91.54
0.028
6.79
0.312
-112.73
900 MHz
0.892
-152.91
10.51
87.43
0.028
3.35
0.312
-116.77
1.0 GHz
0.890
-157.30
9.53
83.68
0.028
0.28
0.314
-120.15
1.1 GHz
0.889
-161.12
8.71
80.20
0.028
-2.51
0.318
-123.04
1.2 GHz
0.889
-164.51
8.01
76.95
0.028
-5.07
0.322
-125.57
1.3 GHz
0.888
-167.56
7.41
73.86
0.028
-7.45
0.328
-127.82
1.4 GHz
0.888
-170.34
6.89
70.91
0.028
-9.69
0.335
-129.87
1.5 GHz
0.888
-172.91
6.44
68.07
0.028
-11.81
0.342
-131.77
1.6 GHz
0.888
-175.30
6.04
65.32
0.028
-13.82
0.349
-133.56
1.7 GHz
0.888
-177.55
5.69
62.65
0.027
-15.74
0.357
-135.25
1.8 GHz
0.888
-179.68
5.37
60.05
0.027
-17.58
0.364
-136.89
1.9 GHz
0.888
178.29
5.09
57.50
0.027
-19.34
0.373
-138.48
2.0 GHz
0.888
176.34
4.83
55.01
0.027
-21.04
0.381
-140.03
2.1 GHz
0.889
174.45
4.60
52.56
0.026
-22.69
0.389
-141.55
2.2 GHz
0.889
172.63
4.39
50.14
0.026
-24.27
0.397
-143.06
2.3 GHz
0.889
170.84
4.20
47.76
0.026
-25.80
0.405
-144.56
2.4 GHz
0.889
169.10
4.02
45.41
0.025
-27.28
0.413
-146.04
2.5 GHz
0.890
167.39
3.86
43.09
0.025
-28.70
0.421
-147.52
2.6 GHz
0.890
165.71
3.71
40.79
0.025
-30.08
0.429
-149.00
2.7 GHz
0.891
164.04
3.57
38.51
0.024
-31.41
0.437
-150.48
2.8 GHz
0.891
162.39
3.44
36.26
0.024
-32.69
0.445
-151.95
2.9 GHz
0.891
160.76
3.32
34.01
0.024
-33.92
0.452
-153.43
3.0 GHz
0.892
159.13
3.21
31.79
0.023
-35.10
0.459
-154.92
3.2 GHz
0.892
155.89
3.00
27.38
0.023
-37.31
0.473
-157.90
3.4 GHz
0.893
152.65
2.83
23.00
0.022
-39.32
0.486
-160.90
3.6 GHz
0.893
149.39
2.67
18.66
0.021
-41.09
0.499
-163.93
3.8 GHz
0.894
146.09
2.54
14.34
0.020
-42.63
0.510
-166.99
4.0 GHz
0.894
142.74
2.41
10.02
0.020
-43.90
0.521
-170.10
4.2 GHz
0.895
139.33
2.31
5.70
0.019
-44.88
0.530
-173.24
4.4 GHz
0.895
135.84
2.21
1.37
0.018
-45.53
0.539
-176.45
4.6 GHz
0.895
132.26
2.12
-2.98
0.018
-45.84
0.547
-179.71
4.8 GHz
0.895
128.59
2.04
-7.36
0.017
-45.78
0.554
176.97
5.0 GHz
0.895
124.80
1.97
-11.79
0.016
-45.32
0.561
173.56
5.2 GHz
0.895
120.90
1.91
-16.27
0.016
-44.47
0.566
170.07
5.4 GHz
0.895
116.87
1.85
-20.81
0.016
-43.25
0.571
166.48
5.6 GHz
0.895
112.70
1.80
-25.41
0.015
-41.72
0.575
162.78
5.8 GHz
0.895
108.38
1.75
-30.10
0.015
-39.97
0.579
158.96
6.0 GHz
0.895
103.92
1.70
-34.88
0.016
-38.13
0.581
155.00
To download the s-parameters in s2p format, go to the CGH35015 Product Page and click on the documentation tab.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH35015F (Package Type ­— 440166)
Product Dimensions CGH35015P (Package Type —
­ 440196)
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH35015F
GaN HEMT
Each
CGH35015P
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH35015-TB
CGH35015F-AMP
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH35015 Rev 4.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf