CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440201 PN: CGH3124 0F Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz 3.1 GHz Units Output Power 243 249 249 245 243 W Gain 11.9 11.9 11.9 11.9 11.9 dB 60 61 60 59 52 % Power Added Efficiency Note: Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm. Features 2.7 - 3.1 GHz Operation • 12 dB Power Gain • 60 % Power Added Efficiency • < 0.2 dB Pulsed Amplitude Droop 15 Rev 2.0 – May 20 • Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Pulse Width Duty Cycle Drain-Source Voltage PW 1 ms DC 50 % VDSS 120 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Power Dissipation PDISS 345 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Conditions Maximum Forward Gate Current IGMAX 60 mA 25˚C Maximum Drain Current1 IDMAX 24 A 25˚C Soldering Temperature2 TS 245 ˚C τ 40 in-oz RθJC 0.5 ˚C/W 85˚C TC -40, +150 ˚C 30 seconds Screw Torque Pulsed Thermal Resistance, Junction to Case3 Case Operating Temperature 3 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH31240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 57.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 1.0 A Saturated Drain Current2 IDS 46.4 56.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 57.6 mA DC Characteristics Conditions 1 RF Characteristics3 (TC = 25˚C, F0 = 2.7, 2.9, 3.1 GHz unless otherwise noted) Output Power POUT 200 250 – W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Added Efficiency1 at 2.7 GHz PAE 49 54 – % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Added Efficiency2 at 2.9 GHz PAE 52 58 – % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Added Efficiency3 at 3.1 GHz PAE 42 49 – % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Gain GP 11 12 – dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Small Signal Gain S21 14 16 – dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm Input Return Loss S11 – –12 –8.0 dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm Output Return Loss S22 – –6.0 –4.5 dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm D – 0.15 – dB VDD = 28 V, IDQ = 1.0 A Pulsed Amplitude Droop Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH31240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%. Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1.- Gain and Return Losses vs Frequency of the CGH31240F Measured in CGH31240F-AMP Amplifier Circuit. VDS = 28 Sparameters V, IDS = 1 A CGH31240 20 Gain (dB) 15 10 Magnitude (dB) 5 0 ORL (dB) -5 -10 IRL (dB) -15 -20 S21 -25 S22 -30 2000 S11 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 Frequency (MHz) 260 16 250 15 240 14 230 13 220 12 210 Pout (W) Gain (dB) Output Power (W) Figure 2.- Typical Pulsed Output Power and Power Gain vs Frequency of the CGH31240F Measured in CGH31240F-AMP Amplifier Circuit. CGH31240 RF Performance vs Frequency VDS = 28 V, IDS = 1=A, = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20% Pin 42PdBm Pulse = 300 us @ 20 % duty cycle IN 11 Power Gain (dB) 200 2600 2700 2800 2900 3000 3100 10 3200 Frequency (MHz) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3.- CGH31240 Power vs Input Power CGH31240 OutputOutput Power vs Input Power VVdd = 28 V, I = 1 A, Pulse Width = 300 μS, Duty Cycle 20%% = 28 V, Idq = 1 A, PW = 300 us, Duty Cycle = =20 DS DS 60 55 2.7 GHz Output Power (dBm) 50 2.9 GHz 3.1 GHz 45 40 35 30 25 20 5 10 15 20 25 30 35 40 45 50 Input Power (dBm) 70 18 60 16 50 14 40 12 PAE - 2.7 GHz PAE - 2.9 GHz PAE - 3.1 GHz Gain - 2.7 GHz Gain - 2.9 GHz Gain - 3.1 GHz 30 10 20 8 10 6 0 Gain (dB) PAE (%) Figure 4.- PAE CGH31240 PAE Gain vsPower Input Power CGH31240 & Gain vs& Input and Fixture VVdd = 28 V, I = 1 A, Pulse Width = 300 μS, Duty Cycle = 20 % % = 28 DSV, Idq = 1A, PW = 300 us, Duty Cycle = 20 DS 4 5 10 15 20 25 30 35 40 45 50 Input Power (dBm) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance 55.0 100 54.5 90 54.0 80 53.5 70 53.0 60 52.5 50 52.0 PAE (%) Output Power (dBm) Figure 5.- Typical Pulsed Output Power and Power Added Efficiency vs Frequency of the CGH31240F Measured in CGH31240F-AMP Amplifier Circuit. CGH31240 RF Performance vs Frequency VDS = 28 V, IDS =Pin 1 A,= 42 PINdBm = 42- dBm, Width Duty Cycle = 20% Pulse Pulse = 300 us @ 20=%300 dutyμS, cycle 40 Pout (dBm) PAE (%) 51.5 2600 2700 2800 2900 3000 3100 30 3200 Frequency (MHz) Typical Pulse Droop Performance CGH31240F Pulsed Power Performance 54.3 54.2 300 us 5 % 300 us 10 % 300 us 20 % 300 us 25 % 1 ms 5 % 1 ms 10 % 1 ms 20 % 1 ms 25 % 5 ms 5 % 5 ms 10 % 5 ms 20 % 5 ms 25 % 54.1 Output Power (dBm) 54.0 53.9 Pulse Width Duty Cycle (%) Droop (dB) 10 us 5-25 0.05 53.8 53.7 53.6 50 us 5-25 0.05 100 us 5-25 0.10 300 us 5-25 0.15 1 ms 5-25 0.30 5 ms 5-25 0.60 53.5 53.4 53.3 -1 0 1 2 3 4 5 6 Time (ms) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH31240 Pulse Transient Rth 1.0 0.9 Theta JC (oC/W) 0.8 0.7 0.6 10 % Duty Cycle - Pdiss = 230 W 20 % Duty Cycle - Pdiss = 230 W 0.5 50 % Duty Cycle - Pdiss = 230 W 10 % Duty Cycle - Pdiss = 345 W 0.4 0.3 0.2 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Pulse Width (seconds) CGH31240 Transient Power Dissipation De-rating CurveDe-rating Curve CGH3x240F Pulsed Power Dissipation 400 Power Dissipation (W) 350 300 100 us, 10 % 300 us, 20 % 1 ms, 20% 250 1 ms, 50 % 200 150 Note 1 100 50 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH31240F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 511 OHM, +/- 1%, 1/16W, 0603 1 R2 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 1 CAP, 10.0pF, +/-5%, 250V, 0603, ATC600S 2 C1,C3 C2 C4,C11 C15 C5,C12 CAP, 6.8pF, +/- 0.25 pF, 250V, 0603, ATC600S 1 CAP, 470pF, +/-5%, 100V, 0603, X7R 2 CAP, 33uF, 20%, G CASE 1 CAP, 33000 pF, 0805, 100V, X7R 2 C13 CAP, 1.0uF, 100V, 10%, X7R, 1210 1 C6 CAP, 10uF, 16V, TANTALUM 1 CAP, 10pF, +/- 1%, 250V, 0805 2 C9,C10 C16 J1,J2 J3 CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC 1 CONN, SMA, PANEL MOUNT JACK, FL 2 HEADER, RT>PLZ, 0.1CEN LK 9POS 1 J4 CONNECTOR, SMB, STRAIGHT, JACK,SMD 1 W1 CABLE, 18 AWG, 4.2 1 L1 FERRITE, 22 OHM, 0805, BLM21PG220SN1 1 PCB, RO4350, 2.5 X 4.0 X 0.030 1 CGH31240F 1 Q1 CGH31240F-AMP Demonstration Amplifier Circuit Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH31240F-AMP Demonstration Amplifier Circuit Outline CGH31240F-AMP Demonstration Amplifier Circuit Schematic Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH31240F (Small Signal, VDS = 28 V, IDQ = 1000 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.970 170.7 1.73 35.7 0.003 -50.20 0.880 172.0 600 MHz 0.972 167.9 1.42 26.4 0.003 -58.75 0.891 169.5 700 MHz 0.973 165.2 1.21 17.6 0.003 -66.68 0.899 166.8 800 MHz 0.974 162.4 1.07 9.4 0.003 -74.07 0.906 163.9 900 MHz 0.975 159.5 0.96 1.6 0.003 -81.04 0.911 160.9 1.0 GHz 0.975 156.5 0.90 -6.0 0.003 -87.75 0.914 157.6 1.1 GHz 0.974 153.3 0.85 -13.4 0.004 -94.31 0.915 154.2 1.2 GHz 0.974 150.0 0.83 -20.8 0.004 -100.84 0.916 150.6 1.3 GHz 0.973 146.4 0.83 -28.3 0.004 -107.45 0.915 146.8 1.4 GHz 0.971 142.6 0.85 -35.9 0.004 -114.23 0.912 142.6 1.5 GHz 0.969 138.5 0.89 -43.9 0.005 -121.30 0.908 138.0 1.6 GHz 0.966 133.9 0.96 -52.3 0.006 -128.79 0.902 133.0 1.7 GHz 0.963 128.8 1.05 -61.3 0.007 -136.83 0.893 127.4 1.8 GHz 0.958 123.1 1.18 -71.0 0.008 -145.62 0.883 121.1 1.9 GHz 0.951 116.4 1.37 -81.8 0.009 -155.39 0.869 113.7 2.0 GHz 0.940 108.4 1.62 -93.8 0.012 -166.47 0.851 105.1 2.1 GHz 0.924 98.7 1.98 -107.7 0.015 -179.29 0.828 94.6 2.2 GHz 0.899 86.5 2.49 -123.9 0.019 165.52 0.796 81.7 2.3 GHz 0.857 70.5 3.19 -143.3 0.026 147.11 0.753 65.3 2.4 GHz 0.786 48.8 4.11 -167.0 0.034 124.49 0.692 44.1 2.5 GHz 0.677 19.2 5.14 164.4 0.044 97.04 0.607 17.1 2.6 GHz 0.544 -19.8 5.99 132.0 0.053 65.78 0.507 -14.9 2.7 GHz 0.448 -66.0 6.37 98.8 0.058 33.68 0.424 -47.8 2.8 GHz 0.422 -109.5 6.35 67.2 0.060 3.29 0.380 -76.4 2.9 GHz 0.427 -143.8 6.19 37.7 0.060 -25.00 0.369 -99.2 3.0 GHz 0.421 -171.5 6.08 9.2 0.060 -52.23 0.370 -117.6 3.2 GHz 0.243 120.6 6.20 -53.0 0.064 -111.80 0.279 -141.6 3.4 GHz 0.472 -78.8 4.79 -135.3 0.051 168.82 0.437 -99.1 3.6 GHz 0.821 -139.7 2.06 160.3 0.023 107.35 0.777 -131.3 3.8 GHz 0.897 -168.1 0.91 121.3 0.010 71.59 0.877 -153.9 4.0 GHz 0.919 173.9 0.46 92.8 0.005 46.59 0.915 -169.9 4.2 GHz 0.925 159.9 0.26 69.5 0.003 26.99 0.931 177.2 4.4 GHz 0.925 147.6 0.16 49.0 0.002 10.54 0.937 165.9 4.6 GHz 0.920 136.2 0.10 30.7 0.001 -3.53 0.937 155.2 4.8 GHz 0.913 124.8 0.07 13.6 0.001 -16.16 0.932 144.6 5.0 GHz 0.903 113.2 0.05 -2.9 0.001 -27.84 0.923 133.8 5.2 GHz 0.891 101.1 0.04 -19.3 0.001 -39.20 0.911 122.4 5.4 GHz 0.877 88.0 0.03 -35.8 0.000 -50.53 0.895 109.8 5.6 GHz 0.860 73.9 0.03 -52.2 0.000 -61.60 0.875 95.9 5.8 GHz 0.842 58.5 0.02 -68.3 0.000 -72.36 0.852 80.2 6.0 GHz 0.824 41.6 0.02 -83.9 0.000 -82.61 0.828 62.1 To download the s-parameters in s2p format, go to the CGH31240F Product Page and click on the documentation tab. Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH31240F (Package Type — 440201) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH31240F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH31240F-TB CGH31240F-AMP Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH31240F Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH31240F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf