CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Package Type : 440193 / 44 0206 PN: CGHV351 50F / CGHV3 5150P Typical Performance 3.1 - 3.5 GHz (TC = 85˚C) Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz 3.5 GHz Units Output Power 180 180 180 170 150 dB Gain 13.5 13.5 13.5 13.3 12.7 dBc 50 49 50 49 48 % Drain Efficiency Note: Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, PIN = 39 dBm Features: • Rated Power = 150 W @ TCASE = 85°C • Operating Frequency = 2.9 - 3.5 GHz • Transient 100 µsec - 300 µsec @ 20% Duty Cycle • 13.5 dB Power Gain @ TCASE = 85°C 15 Rev 1.0 – May 20 • 50 % Typical Drain Efficiency @ TCASE = 85°C • Input Matched • <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Pulse Width PW 300 µs Duty Cycle DC 20 % Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 30 mA 25˚C Maximum Drain Current1 IDMAX 12 A 25˚C Soldering Temperature2 TS 245 ˚C τ 40 in-oz 3 Pulsed Thermal Resistance, Junction to Case RθJC 0.81 ˚C/W 300 µsec, 20%, 85˚C Pulsed Thermal Resistance, Junction to Case4 RθJC 0.86 ˚C/W 300 µsec, 20%, 85˚C TC -40, +150 ˚C 30 seconds Screw Torque Case Operating Temperature Note: 1 2 3 4 Current limit for long term, reliable operation Refer to the Application Note on soldering at http://www.cree.com/rf/document-library Measured for the CGHV35150P at PDISS = 150 W Measured for the CGHV35150F at PDISS = 150 W Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 (TC = 25˚C) Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 28.8 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 500 mA Saturated Drain Current2 IDS 21.6 25.9 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 28.8 mA RF Characteristics (TC = 85˚C, F0 = 3.1 - 3.5 GHz unless otherwise noted) 3 Output Power at 3.1 GHz POUT 130 170 – W VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm Output Power at 3.5 GHz POUT 100 135 – W VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm Gain at 3.1 GHz GP 12.0 13.3 – dB VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm Gain at 3.5 GHz GP 11.0 12.3 – dB VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm Drain Efficiency at 3.1 GHz DE 40 47 – % VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm Drain Efficiency at 3.5 GHz DE 40 44 – % VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm Amplitude Droop D – -0.3 – dB VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm VSWR – – 5:1 Y No damage at all phase angles, VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm Pulsed Output Mismatch Stress Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV35150-AMP. Pulse Width = 300 μS, Duty Cycle = 20%. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV35150 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance CGHV35150 Sparameters Figure 1. - CGHV35150 Typical Sparameters 50 V,mA, Idq =T500 mA VDD = 50 V,Vdd IDQ == 500 = 25°C CASE 20 15 Magnitude (dB) 10 5 0 -5 S21 S11 -10 -15 2.5 2.7 2.9 3.1 3.3 Frequency (GHz) 3.5 3.7 3.9 Figure 2. - CGHV35150 Typical RF Results VDD = 50 V,RF IDQMeasurements = 500 mA, Pvs = 39 dBm CGHV35150 IN Input Power Vdd = 50 V, Idq = 500 mA, Tplate = 85 deg C, Pulse Width = 300 us, Duty Cycle Tplate = 85°C, Pulse Width = 300 µs, Duty Cycle = 20 % Output Power (W), Gain (dB), and Drain Efficiency (%) = 20 % 200 Output Power 180 160 140 120 Output Power 100 Gain Drain Efficiency 80 Drain Efficiency 60 40 Gain 20 0 2.9 3.0 3.1 3.2 Input Power (dBm) 3.3 3.4 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV35150 Rev 1.0 3.5 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance VDD = CGHV35150 RF Measurements vs Inputvs Power Figure 3. - CGHV35150 Output Power Input Power Vdd = 50 V, Idq = 500 mA, Tplate = 85 deg C, Pulse Width = 300 us, Duty Cycle 50 V, IDQ = 500 mA, TPLATE = 85°C, Pulse Width = 300 µs, Duty Cycle = 20 % = 20% 55 Output Power (dBm) 50 3.1 GHz 45 3.3 GHz 3.5 GHz 40 35 30 25 5 10 15 20 25 30 35 40 45 Input Power (dBm) CGHV35150 RF Measurements vs Input Power Gain (dB) and Drain Efficiency (%) Figure CGHV35150 Gain Efficiency Power Vdd = 504. V, -Idq = 500 mA, Tplate = 85and degDrain C, Pulse Width = 300vs us,Input Duty Cycle = 20 % VDD = 50 V, IDQ = 500 mA, Tplate = 85°C, Pulse Width = 300 µs, Duty Cycle = 20 % 60 18 50 16 Drain Eff - 3.1 GHz 40 14 Drain Eff - 3.3 GHz Drain Eff - 3.5 GHz Output Power Gain - 3.1 GHz Gain - 3.3 GHz 30 12 Gain - 3.5 GHz 20 10 10 8 0 5 10 15 Electrostatic Discharge (ESD) Classifications Parameter Symbol 20 25 30 35 Efficiency InputDrain Power (dBm) Gain 40 45 6 Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV35150 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV35150 Power Dissipation De-rating Curve CGHV35150FTransient Transient Power Power Dissipation Curve Figure 5. - CGHV35150 DissipationDe-Rating De-Rating Curve 140 120 Power Dissipation (W) 100 80 60 Note 1 Flange 40 Pill 20 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). CGHV35150-AMP Application Circuit Bill of Materials Designator Description Qty R1 RES, 511 OHM, +/- 1%, 1/16W, 0603 1 R2 RES, 5.1 OHM, +/- 1%, 1/16W, 0603 1 CAP, 10pF, +/- 1%, 250V, 0805 3 C1,C7,C8 C2 CAP, 6.8pF, +/- 0.25 pF,250V, 0603 1 C3 CAP, 10.0pF, +/-5%,250V, 0603 1 C4,C9 CAP, 470PF, 5%, 100V, 0603, X 2 C5,C10 CAP, 33000PF, 0805,100V, X7R 1 C6 CAP 10uF 16V TANTALUM 1 C11 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C12 CAP, 33 UF, 20%, G CASE 1 C13 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 CONN, SMA, PANEL MOUNT JACK, FL 2 HEADER RT>PLZ .1CEN LK 9POS 1 J1,J2 J3 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, RO4350, 20 MIL THK, CGHV35150 1 CGHV35150 1 Q1 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV35150 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV35150-AMP Application Circuit Outline CGHV35150-AMP Application Circuit Schematic Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV35150 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV35150F (Package Type — 440193) Product Dimensions CGHV35150P (Package Type — 440206) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV35150 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV35150F/P Flanged or Pill Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 3.5 GHz 150 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV35150 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV35150F GaN HEMT Each CGHV35150P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV35150-TB CGHV35150F-AMP Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV35150 Rev 1.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV35150 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf