BC516 - Semtech

BC516
PNP Silicon Darlington Transistor
Collector
Base
Emitter
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
40
V
Collector Emitter Voltage
-VCEO
30
V
Emitter Base Voltage
-VEBO
10
V
Collector Current (DC)
-IC
500
mA
Peak Collector Current
-ICM
800
mA
Total Power Dissipation
Ptot
500
mW
Tj
150
O
Tstg
- 55 to + 150
O
Junction Temperature
Storage Temperature Range
C
C
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 20 mA
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 10 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 0.1 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 0.1 mA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 10 mA
Transition Frequency
at -VCE = 5 V, -IC = 10 mA
Symbol
Min.
Max.
Unit
hFE
30000
-
-
-ICBO
-
100
nA
-IEBO
-
100
nA
-V(BR)CBO
40
-
V
-V(BR)CEO
30
-
V
-V(BR)EBO
10
-
V
-VCE(sat)
-
1
V
-VBE(sat)
-
1.5
V
-VBE(on)
-
1.4
V
fT
125
-
MHz
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 07/01/2008