BCV47 - Semtech

BCV27 / BCV47
NPN Darlington Transistors
for preamplifier input applications
TO-236 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Symbol
BCV27
BCV47
BCV27
BCV47
Value
40
80
30
60
VCBO
VCEO
Emitter Base Voltage
Unit
V
V
VEBO
10
V
Collector Current
IC
500
mA
Peak Collector Current
ICM
800
mA
Base Current
IB
100
mA
Ptot
200
mW
Tj
150
O
Tstg
- 65 to + 150
O
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 1 mA
at VCE = 5 V, IC = 10 mA
at VCE = 5 V, IC = 100 mA
Collector Base Cutoff Current
at VCB = 30 V
at VCB = 60 V
Emitter Base Cutoff Current
at VEB = 10 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 0.1 mA
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 0.1 mA
Base Emitter On-state Voltage
at IC = 10 mA, VCE = 5 V
Transition Frequency
at VCE = 5 V, IC = 30 mA, f = 100 MHz
C
C
Symbol
Min.
Typ.
Max.
Unit
BCV27
BCV47
BCV27
BCV47
BCV27
BCV47
hFE
hFE
hFE
hFE
hFE
hFE
4000
2000
10000
4000
20000
10000
-
-
-
BCV27
BCV47
ICBO
-
-
100
100
nA
IEBO
-
-
100
nA
BCV27
V
BCV47 (BR)CBO
BCV27
V
BCV47 (BR)CEO
40
80
30
60
-
-
V
-
-
V
V(BR)EBO
10
-
-
V
VCE(sat)
-
-
1
V
VBE(sat)
-
-
1.5
V
VBE(on)
-
-
1.4
V
fT
-
220
-
MHz
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015
Rev:01
BCV27 / BCV47
Power Dissipation vs Ambient Temperature
Power Dissipation: Ptot (mW)
300
250
200
150
100
50
0
0
25
50
75
125
100
150
Ambient Temperature: Ta ( C)
O
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015
Rev:01