STM4532

S T M4532
Green
Product
S amHop Microelectronics C orp.
Mar.30, 2005 V er1.1
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
P R ODUC T S UMMAR Y (P -C hannel)
V DS S
ID
V DS S
ID
30V
5.5A
-30V
-4.5A
R DS (ON)
( m Ω ) Max
R DS (ON)
40@ V G S = 10V
( m Ω ) Max
55@ V G S = -10V
50@ V G S = 4.5V
85@ V G S = -4.5V
D1
D1
D2
D2
8
7
6
5
1
2
3
S1
G1 S 2
S O-8
1
4
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
P arameter
N-C hannel P-C hannel
Unit
Drain-S ource Voltage
V DS
30
-30
V
Gate-S ource Voltage
V GS
20
20
V
Drain C urrent-C ontinuous a @ T J =125 C
b
-P ulsed
ID
5.5
-4.5
A
IDM
23
-18
A
Drain-S ource Diode Forward C urrent a
IS
1.7
-1.7
A
Maximum P ower Dissipation a
PD
2.0
T J , T S TG
-55 to 150
Operating Junction and S torage
Temperature R ange
W
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
R ӰJA
1
62.5
C /W
S T M4532
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 24V, V GS = 0V
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
V GS (th)
V DS = V GS , ID = 250uA
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
30
V
1
uA
100
nA
1.8
V
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
R DS (ON)
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
0.8
V GS =10V, ID = 6A
28
40
m ohm
V GS =4.5V, ID = 5.2A
40
50
m ohm
V DS = 5V, V GS = 10V
15
A
V DS = 10V, ID = 6.0A
6
S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =8V, V GS = 0V
f =1.0MH Z
510
PF
155
PF
127
PF
15.6
ns
9.7
ns
26.3
ns
26.9
ns
9.3
nC
2.5
nC
3.2
nC
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 10V,
ID = 1A,
V GE N = 4.5V,
R L = 10 ohm
R GE N = 6 ohm
V DS =10V, ID = 6A,
V GS =4.5V
2
S T M4532
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -24V, V GS = 0V
-1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
-1.5
-2.5
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS =-10V, ID = -4.9A
45
55 m ohm
V GS =-4.5V, ID = -3.6A
75
85 m ohm
-30
V
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
-1
V DS = -5V, V GS = -10V
-12
A
V DS = -15V, ID = - 4.9A
4
S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
393
PF
116
PF
45
PF
13
ns
4.7
ns
47.1
ns
17
ns
V DS =-15V, ID=-4.9A,V GS =-10V
15.6
nC
V DS =-15V, ID=-4.9A,V GS =-4.5V
7.3
nC
2.4
nC
3.3
nC
V DS =-15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V D = -15V,
R L = 15 ohm
ID = -1A,
V GE N = -10V,
R GE N = 6 ohm
V DS =-15V, ID = - 4.9A,
V GS =-10V
3
S T M4532
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
C
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
0.77 1.2
-0.82 -1.2
V G S = 0V, Is =1.7A N-C h
V G S = 0V, Is =-1.7A P -C h
VSD
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-C hannel
25
10
V G S =10,9,8,7,6,5,4,3V
20
I D , Drain C urrent (A)
ID , Drain C urrent(A)
8
6
4
V G S =1.5V
2
15
10
25 C
T j=125 C
5
-55 C
0
0.0
0
0
2
4
6
8
12
10
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1.0
1.5
2.0
2.5
3.0
F igure 2. Trans fer C haracteris tics
1.8
R DS (ON) , On-R es is tance
Normalized
1200
1000
C , C apacitance (pF )
0.5
V G S , G ate-to-S ource Voltage (V )
800
600
C is s
400
200
V G S =10V
I D =6A
1.6
1.4
1.2
1.0
0.8
C os s
0
0
2
4
6
8
C rs s
10
0.6
-55
12
-25
0
25
50
75
100
125
V DS , Drain-to S ource Voltage (V )
T J , J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
4
V
S T M4532
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.6
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
-55 -25
0
25
50
75
100 125 150
1.15
5
1.10
I D =250uA
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
18
20
15
10
Is , S ource-drain current (A)
gF S , T rans conductance (S )
V th, Normalized
G ate-S ource T hres hold V oltage
N-C hannel
12
9
6
V DS =10V
3
1
T J =25 C
0
0
0
5
10
15
20
0.4
25
0.6
0.8
1.0
1.2
1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5
S T M4532
P -C hannel
20
25
-V G S =10,9,8,7,6,5,4,3V
15
10
-V G S =1.5V
5
T j=125 C
-I D , Drain C urrent (A)
-I D , Drain C urrent (A)
25 C
16
20
12
-55 C
8
4
0
0
0
2
4
6
8
10
0
12
F igure 1. Output C haracteris tics
C is s
400
300
200
C os s
100
C rs s
0
0
5
10
15
20
25
1.5
2
2.5
3
F igure 2. Trans fer C haracteris tics
R DS (ON) , On-R es is tance(Ohms )
(Normalized)
C , C apacitance (pF )
500
1
-V G S , G ate-to-S ource Voltage (V )
-V DS , Drain-to-S ource Voltage (V )
600
0.5
30
1.8
1.6
V G S =-10V
I D =-4.9A
1.4
1.2
1.0
0.8
0.6
-55
-25
0
25
50
75
100
125
T j, J unction T emperature ( C )
-V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
6
S T M4532
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.09
V DS =V G S
I D =-250uA
1.06
1.03
1.00
0.9
0.6
0.3
-50 -25
0
25
50
75
100 125 150
1.15
5
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-55 -25
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
10
20.0
8
10.0
T J =25 C
-Is , S ource-drain current (A)
gF S , T rans conductance (S )
V th, Normalized
G ate-S ource T hres hold V oltage
P -C hannel
6
4
2
V DS =-15V
1.0
0
0
5
10
15
20
0.0
-I DS , Drain-S ource C urrent (A)
0.5
1.0
1.5
2.0
2.5
-V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
7
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
S T M4532
50
I D , Drain C urrent (A)
5
V DS =10V
I D =6A
4
3
2
10
0
0.03
4
6
8
S
(
L im
it
10
11
0.1
2
RD
)
ON
10
1
0
0m
ms
s
1s
DC
V G S =10V
S ingle P ulse
T c=25 C
0.1
10 12 14 16
Q g, T otal G ate C harge (nC )
10 20 30 50
1
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe
O perating Area
P -C hannel
40
10
V DS =-15V
I D =-4.9A
8
-I D , Drain C urrent (A)
-V G S , G ate to S ource V oltage (V )
5
V G S , G ate to S ource V oltage (V )
N-C hannel
6
4
2
0
10
RD
2
4
6
8
10
12
Q g, T otal G ate C harge (nC )
im
it
10m
11
s
ms
1s
DC
0.1
V G S =-10V
S ingle P ulse
T A =25 C
0.1
14 16
)L
100
0.03
0
ON
S(
1
10
30 50
-V DS , B ody Diode F orward V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
8
S T M4532
V DD
ton
V IN
D
td(off)
V OUT
V OUT
10%
5
tf
90%
90%
VG S
R GE N
toff
tr
td(on)
RL
INVE R TE D
10%
G
90%
V IN
S
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
Duty C ycle=0.5
0.2
P DM
0.1
0.1
t1
0.05
t2
1.
2.
3.
4.
0.02
S ingle P uls e
0.01
10
-4
10
-3
10
-2
10
-1
R įJ A (t)=r (t) * R įJ A
R įJ A =S ee Datas heet
T J M-T A = P DM* R įJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
9
10
100
S T M4532
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45±
e
B
0.05 TYP.
A1
0.008
TYP.
0.016 TYP.
H
MILLIME T E R S
INC HE S
S Y MB OLS
MIN
A
A1
D
E
H
L
1.35
0.10
4.80
3.81
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
10
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
S T M4532
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:р
PACKAGE
SOP 8N
150п
A0
6.40
B0
5.20
D0
D1
E
E1
E2
P0
P1
P2
T
2.10
ӿ1.5
(MIN)
ӿ1.5
+ 0.1
- 0.0
12.0
²0.3
1.75
5.5
²0.05
8.0
4.0
2.0
²0.05
0.3
²0.05
K
S
G
R
V
K0
SO-8 Reel
UNIT:р
TAPE SIZE
REEL SIZE
M
N
W
W1
H
12 р
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
ӿ12.75
+ 0.15
11
2.0
²0.15