S T M4532 Green Product S amHop Microelectronics C orp. Mar.30, 2005 V er1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) P R ODUC T S UMMAR Y (P -C hannel) V DS S ID V DS S ID 30V 5.5A -30V -4.5A R DS (ON) ( m Ω ) Max R DS (ON) 40@ V G S = 10V ( m Ω ) Max 55@ V G S = -10V 50@ V G S = 4.5V 85@ V G S = -4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter N-C hannel P-C hannel Unit Drain-S ource Voltage V DS 30 -30 V Gate-S ource Voltage V GS 20 20 V Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed ID 5.5 -4.5 A IDM 23 -18 A Drain-S ource Diode Forward C urrent a IS 1.7 -1.7 A Maximum P ower Dissipation a PD 2.0 T J , T S TG -55 to 150 Operating Junction and S torage Temperature R ange W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R ӰJA 1 62.5 C /W S T M4532 N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V Gate-Body Leakage IGS S V GS = 20V, V DS = 0V V GS (th) V DS = V GS , ID = 250uA Min Typ C Max Unit OFF CHAR ACTE R IS TICS 30 V 1 uA 100 nA 1.8 V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance R DS (ON) ID(ON) gFS On-S tate Drain Current Forward Transconductance 0.8 V GS =10V, ID = 6A 28 40 m ohm V GS =4.5V, ID = 5.2A 40 50 m ohm V DS = 5V, V GS = 10V 15 A V DS = 10V, ID = 6.0A 6 S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =8V, V GS = 0V f =1.0MH Z 510 PF 155 PF 127 PF 15.6 ns 9.7 ns 26.3 ns 26.9 ns 9.3 nC 2.5 nC 3.2 nC c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GE N = 6 ohm V DS =10V, ID = 6A, V GS =4.5V 2 S T M4532 P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1.5 -2.5 V Drain-S ource On-S tate R esistance R DS (ON) V GS =-10V, ID = -4.9A 45 55 m ohm V GS =-4.5V, ID = -3.6A 75 85 m ohm -30 V ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance -1 V DS = -5V, V GS = -10V -12 A V DS = -15V, ID = - 4.9A 4 S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time 393 PF 116 PF 45 PF 13 ns 4.7 ns 47.1 ns 17 ns V DS =-15V, ID=-4.9A,V GS =-10V 15.6 nC V DS =-15V, ID=-4.9A,V GS =-4.5V 7.3 nC 2.4 nC 3.3 nC V DS =-15V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V D = -15V, R L = 15 ohm ID = -1A, V GE N = -10V, R GE N = 6 ohm V DS =-15V, ID = - 4.9A, V GS =-10V 3 S T M4532 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.77 1.2 -0.82 -1.2 V G S = 0V, Is =1.7A N-C h V G S = 0V, Is =-1.7A P -C h VSD Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-C hannel 25 10 V G S =10,9,8,7,6,5,4,3V 20 I D , Drain C urrent (A) ID , Drain C urrent(A) 8 6 4 V G S =1.5V 2 15 10 25 C T j=125 C 5 -55 C 0 0.0 0 0 2 4 6 8 12 10 V DS , Drain-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 1.0 1.5 2.0 2.5 3.0 F igure 2. Trans fer C haracteris tics 1.8 R DS (ON) , On-R es is tance Normalized 1200 1000 C , C apacitance (pF ) 0.5 V G S , G ate-to-S ource Voltage (V ) 800 600 C is s 400 200 V G S =10V I D =6A 1.6 1.4 1.2 1.0 0.8 C os s 0 0 2 4 6 8 C rs s 10 0.6 -55 12 -25 0 25 50 75 100 125 V DS , Drain-to S ource Voltage (V ) T J , J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 4 V S T M4532 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 -55 -25 0 25 50 75 100 125 150 1.15 5 1.10 I D =250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 18 20 15 10 Is , S ource-drain current (A) gF S , T rans conductance (S ) V th, Normalized G ate-S ource T hres hold V oltage N-C hannel 12 9 6 V DS =10V 3 1 T J =25 C 0 0 0 5 10 15 20 0.4 25 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M4532 P -C hannel 20 25 -V G S =10,9,8,7,6,5,4,3V 15 10 -V G S =1.5V 5 T j=125 C -I D , Drain C urrent (A) -I D , Drain C urrent (A) 25 C 16 20 12 -55 C 8 4 0 0 0 2 4 6 8 10 0 12 F igure 1. Output C haracteris tics C is s 400 300 200 C os s 100 C rs s 0 0 5 10 15 20 25 1.5 2 2.5 3 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance(Ohms ) (Normalized) C , C apacitance (pF ) 500 1 -V G S , G ate-to-S ource Voltage (V ) -V DS , Drain-to-S ource Voltage (V ) 600 0.5 30 1.8 1.6 V G S =-10V I D =-4.9A 1.4 1.2 1.0 0.8 0.6 -55 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) -V DS , Drain-to S ource Voltage (V ) F igure 4. On-R es is tance Variation with Temperature F igure 3. C apacitance 6 S T M4532 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.09 V DS =V G S I D =-250uA 1.06 1.03 1.00 0.9 0.6 0.3 -50 -25 0 25 50 75 100 125 150 1.15 5 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -55 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 10 20.0 8 10.0 T J =25 C -Is , S ource-drain current (A) gF S , T rans conductance (S ) V th, Normalized G ate-S ource T hres hold V oltage P -C hannel 6 4 2 V DS =-15V 1.0 0 0 5 10 15 20 0.0 -I DS , Drain-S ource C urrent (A) 0.5 1.0 1.5 2.0 2.5 -V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 7 F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent S T M4532 50 I D , Drain C urrent (A) 5 V DS =10V I D =6A 4 3 2 10 0 0.03 4 6 8 S ( L im it 10 11 0.1 2 RD ) ON 10 1 0 0m ms s 1s DC V G S =10V S ingle P ulse T c=25 C 0.1 10 12 14 16 Q g, T otal G ate C harge (nC ) 10 20 30 50 1 V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area P -C hannel 40 10 V DS =-15V I D =-4.9A 8 -I D , Drain C urrent (A) -V G S , G ate to S ource V oltage (V ) 5 V G S , G ate to S ource V oltage (V ) N-C hannel 6 4 2 0 10 RD 2 4 6 8 10 12 Q g, T otal G ate C harge (nC ) im it 10m 11 s ms 1s DC 0.1 V G S =-10V S ingle P ulse T A =25 C 0.1 14 16 )L 100 0.03 0 ON S( 1 10 30 50 -V DS , B ody Diode F orward V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 8 S T M4532 V DD ton V IN D td(off) V OUT V OUT 10% 5 tf 90% 90% VG S R GE N toff tr td(on) RL INVE R TE D 10% G 90% V IN S 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 Duty C ycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 t2 1. 2. 3. 4. 0.02 S ingle P uls e 0.01 10 -4 10 -3 10 -2 10 -1 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 9 10 100 S T M4532 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008 TYP. 0.016 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 10 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± S T M4532 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 6.40 B0 5.20 D0 D1 E E1 E2 P0 P1 P2 T 2.10 ӿ1.5 (MIN) ӿ1.5 + 0.1 - 0.0 12.0 ²0.3 1.75 5.5 ²0.05 8.0 4.0 2.0 ²0.05 0.3 ²0.05 K S G R V K0 SO-8 Reel UNIT:р TAPE SIZE REEL SIZE M N W W1 H 12 р ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 11 2.0 ²0.15