S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 3A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -2A R DS (ON) ( m Ω ) 50 @ V G S = 10V 90 @ V G S = -10V 65 @ V G S = 4.5V 135 @ V G S = -4.5V D1 S OT 26 Top View G1 S2 G2 1 2 3 6 D1 5 4 S1 D2 G2 G1 D2 Max S1 N-ch S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter N-C hannel P-C hannel Unit Drain-S ource Voltage V DS 30 -30 V Gate-S ource Voltage V GS 20 20 V 3 -2 A 2.7 1.8 A IDM 12 -8 A IS 1.25 -1.25 A 25 C a Drain C urrent-C ontinuous @ Ta ID 70 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C PD Ta=70 C Operating Junction and S torage Temperature R ange 1.25 W 0.8 T J , T S TG -55 to 150 C R JA 100 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T S 3621 N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V Gate-Body Leakage IGS S V GS = 20V, V DS = 0V Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) Min Typ C Max Unit OFF CHAR ACTE R IS TICS 30 V 1 uA 100 nA 1.7 3 V V GS = 10V, ID = 3A 40 50 m-ohm V GS = 4.5V, ID = 2A 52 65 m-ohm ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance V DS = 5V, V GS = 4.5V V DS = 5V, ID =3A 1 10 A 9 S 330 PF 70 PF 45 PF 9 ns 9 ns 15 ns 10 ns V DS =15V, ID =3A,V GS =10V 6 nC V DS =15V, ID =3A,V GS =4.5V 3 nC 1 nC 1.5 nC DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 15V, ID = 1A, V GS = 10V, R GE N = 6 ohm V DS =15V, ID = 3A V GS =10V 2 S T S 3621 P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA Drain-S ource On-S tate R esistance R DS (ON) -30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance DYNAMIC CHAR ACTE R IS TICS C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time V V GS = -10V, ID = -2A 75 90 m-ohm V GS = -4.5V, ID =-1A 120 135 m-ohm 8 A 5.5 S 360 PF 84 PF 52 PF 6 ns 9.5 ns 48 ns 25 ns V DS =-15V,ID=-2A,V GS =-10V 7 nC V DS =-15V,ID=-2A,V GS =-4.5V 3.4 nC V DS =-15V, ID = -2A V GS =-10V 0.9 nC 2.2 nC V DS = -5V, ID = - 3A c Input Capacitance Turn-On Delay Time -3 V DS = -5V, V GS = -10V ID(ON) gFS On-S tate Drain Current -1.8 -1 V DS =-15V, V GS = 0V f =1.0MH Z c tD(ON) V DD = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 ohm tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 3 S T S 3621 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =1.25A VGS = 0V, Is =-1.25A VSD 0.81 -0.8 N-Ch P-Ch 1. 2 -1.2 Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-Channel 20 25 C V G S =4.5V 16 I D , Drain C urrent (A) 16 ID , Drain C urrent(A) 20 V G S =5V V G S =10V V G S =4V 12 V G S =3.5V 8 4 V G S =3V 0 -55 C 12 8 4 0 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 1.8 2.7 3.6 4.5 5.4 F igure 2. Trans fer C haracteris tics 90 R DS (ON) , On-R es is tance Normalized 1.5 75 R DS (on) (m Ω) 0.9 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =4.5V 60 45 V G S =10V 30 15 1 T j=125 C 1 4 8 12 16 1.4 1.2 1.1 V G S =4.5V I D =2A 1.0 0.9 -25 20 V G S =10V I D =3A 1.3 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 4 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 120 20.0 I D =3A Is , S ource-drain current (A) 100 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T S 3621 80 75 C 125 C 60 40 25 C 20 0 25 C 10.0 5.0 75 C 125 C 1.0 0 2 4 6 8 10 0 V G S , G ate-S ource Voltage (V ) 0.4 0.8 1.2 1.6 2.0 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T S 3621 V G S , G ate to S ource V oltage (V ) 600 C , C apacitance (pF ) 500 6 400 C is s 300 200 C os s 100 C rs s V DS =15V I D =3A 8 6 4 2 0 0 0 10 5 10 15 20 25 30 0 1 V DS , Drain-to S ource Voltage (V ) 4 5 6 7 8 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 50 100 V DS =15V ,I D=1A V G S =10V I D , Drain C urrent (A) S witching T ime (ns ) 3 2 Tr 20 10 Tf 1 10 RD 6 10 60 100 300 600 ( L im it 10 10 11 1s 0m ms s DC 0.1 0.03 1 S ) ON V G S =10V S ingle P ulse T c=25 C 0.1 1 R g, G ate R es is tance ( Ω) 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 10 1 0.5 0.2 0.1 P DM 0.1 t1 t2 0.05 0.02 Single Pulse 0.01 0.01 0.00001 1. 2. 3. 4. 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T S 3621 P-Channel 10 15 V G S =-5V V G S =-10V 25 C 12 I D , Drain C urrent (A) ID , Drain C urrent(A) V G S =-4.5V 8 V G S =-4V 6 V G S =-3.5V 4 2 0 V G S =-3V 9 T j=125 C 3 0 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 1.8 2.7 3.6 4.5 5.4 F igure 2. Trans fer C haracteris tics 210 R DS (ON) , On-R es is tance Normalized 1.5 175 R DS (on) (m Ω) 0.9 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 140 V G S =-4.5V 105 70 V G S =-10V 35 1 -55 C 6 1 2 4 6 8 10 1.4 V G S =-10V I D =-2A 1.3 1.2 1.1 V G S =-4.5V I D =-1A 1.0 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 7 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 240 20.0 I D =-2A Is , S ource-drain current (A) 200 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T S 3621 160 75 C 125 C 120 25 C 80 40 0 10.0 5.0 75 C 1.0 0 2 4 6 8 10 0 V G S , G ate-S ource Voltage (V ) 25 C 125 C 0.4 0.8 1.2 1.6 2.0 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T S 3621 V G S , G ate to S ource V oltage (V ) 600 C , C apacitance (pF ) 500 6 400 C is s 300 200 C os s 100 C rs s V DS =-15V I D =-2A 8 6 4 2 0 0 0 10 5 10 15 20 25 30 0 1 V DS , Drain-to S ource Voltage (V ) 3 4 5 6 7 8 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 120 20 -I D , Drain C urrent (A) S witching T ime (ns ) 2 T D(off) 60 Tr Tf T D(on) 10 V DS =-15V ,ID=-1A 1 10 RD 0.1 0.03 6 10 60 100 300 600 ( L im it 10 10 1 V G S =-10V 1 S ) ON DC 1s 0m ms s V G S =-10V S ingle P ulse T c=25 C 0.1 R g, G ate R es is tance ( Ω) 1 10 30 50 -V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 10 1 0.5 0.2 0.1 P DM 0.1 t1 t2 0.05 0.02 Single Pulse 0.01 0.01 0.00001 1. 2. 3. 4. 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 9 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T S 3621 PA C K A G E O U T L I N E D I M E N S I O N S SOT26 10 S T S 3621 SOT 26 Tape and Reel Data SOT 26 Carrier Tape +0.10 О1.50 0.00 3.50 + 0.05 4.00 + 0.10 1.75 + 0.10 2.00 + 0.05 8.0 + 0.30 A B B A 5 M ax 0.25 + 0.05 +0.10 О1.00 0.00 R0 4.00 + 0.10 3.3 + 0.1 .3 R0 .3 5 Bo 3.2 + 0.1 R0 . 3 SECTION B-B Ko 1.5 + 0.1 SECTION A-A SOT 26 Reel О60 + 0.5 О178.0 + 0.5 1.50 10.6 2.2 + 0.5 9.0 О13.5 + 0.5 SCALE 2:1 SOT 26 11 R0 .3 +1.5 -0 M ax