SDU9435A

S DU9435A
S amHop Microelectronics C orp.
May,2004 ver1.1
P -C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
R DS (ON) ( m W )
ID
S uper high dense cell design for low R DS (ON ).
Max
R ugged and reliable.
50 @ V G S = -10V
-30V
TO-252 P ackage.
-19A
90 @ V G S = -4.5V
D
D
G
S
G
S DU S E R IE S
TO-252AA(D-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T C =25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
-30
V
Gate-S ource Voltage
V GS
20
V
ID
-19
A
IDM
-47
A
Drain-S ource Diode Forward C urrent
IS
1.9
A
Maximum P ower Dissipation @ Tc=25 C
Derate above 25 C
PD
50
W
T J , T S TG
-55 to 150
C
P arameter
Drain C urrent-C ontinuous
-P ulsed
@ TJ=125 C
a
Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1
S DU9435A
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
5
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -24V, V GS = 0V
-1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
-1.5
-3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS = -10V, ID =-5.3A
40
50 m-ohm
V GS = -4.5V, ID = -4.2A
67
90 m-ohm
On-S tate Drain Current
ID(ON)
gFS
-30
V
ON CHAR ACTE R IS TICS b
Forward Transconductance
DYNAMIC CHAR ACTE R IS TICS
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
R ise Time
Turn-Off Delay Time
A
-20
9
S
860
PF
470
PF
180
PF
9
ns
10
ns
37
ns
23
ns
V DS =-15V,ID = -5.3A,V GS =-10V
15
nC
V DS =-15V,ID = -5.3A,V GS =-4.5V
8.6
nC
V DS =-15V, ID = -5.3A
V GS =-10V
3
nC
4
nC
V DS = -15V, ID = - 5.3A
c
Input Capacitance
Turn-On Delay Time
V DS = -5V, V GS = -10V
-1
V DS =-15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
V D = -15V
ID = -1A
V GE N = - 10V
R GE N = 6 -ohm
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
2
S DU9435A
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
5
V GS = 0V, Is =-5.3A
VSD
-0.84 -1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
20
25
6V
-V G S =10,9,8,7V
16
-I D , Drain C urrent (A)
-I D , Drain C urrent (A)
20
5V
15
10
4V
5
0
-55 C
25 C
3V
12
8
4
0
0
0.5
1.0
1.5
2.0
2.5
T j=125 C
3.0
0
F igure 1. Output C haracteris tics
R DS (ON) , On-R es is tance(Ohms )
(Normalized)
C , C apacitance (pF )
2500
2000
1500
C is s
C os s
C rs s
0
0
5
10
15
20
25
1.5
2
2.5
3
F igure 2. Trans fer C haracteris tics
3000
500
1
-V G S , G ate-to-S ource Voltage (V )
-V DS , Drain-to-S ource Voltage (V )
1000
0.5
30
1.8
1.6
V G S =-10V
I D =-5.3A
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j, J unction T emperature ( C )
-V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.09
V DS =V G S
I D =-250uA
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75
100 125 150
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
V G S =0V
12
-Is , S ource-drain current (A)
gF S , T rans conductance (S )
1.15
T j, J unction T emperature ( C )
15
9
6
3
V DS =-15V
5
10
15
10.0
1.0
0
0
20
0.4
-I DS , Drain-S ource C urrent (A)
0.6
50
-I D , Drain C urrent (A)
V DS =-15V
I D =-5.3A
6
4
2
2
4
6
8
10
12
14
R
10
Qg, T otal G ate C harge (nC )
(O
N)
L im
1.1
1.3
it
10
10
0.1
0m
ms
s
DC
1
V G S =-10V
S ingle P ulse
T A =25 C
0.1
16
DS
1s
0.03
0
0
0.9
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
8
0.7
-V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
-V G S , G ate to S ource V oltage (V )
5
V th, Normalized
G ate-S ource T hres hold V oltage
S DU9435A
1
10
30 50
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S DU9435A
-V DD
ton
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
10%
10%
6
G
90%
S
V IN
50%
10%
50%
INVE R TE D
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t2
R θJ A (t)=r (t) * R θJ A
R θJ A =S ee Datas heet
T J M-T A = P DM* R θJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
10
S DU9435A
5
95
7
84
L2
9
6.00
35
05
85
0.94
4
3
0
9
36
2.29
9.70
1.425
0.650
0.600
BSC
1
1.625
0.850
REF.
0.090
82
56
6
0.024
6
9
7
30
3
3
41
3
3
5
1
4
BSC
398
0.064
33
REF.
S DU9435A
TO-252 Tape and Reel Data
TO-252 Carrier Tape
UNIT:㎜
PACKAGE
TO-252
(16 ㎜)
A0
B0
K0
6.80
±0.1
10.3
±0.1
2.50
±0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ψ2
ψ1.5
+ 0.1
- 0
16.0
0.3±
1.75
0.1±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
TO-252 Reel
S
UNIT:㎜
TAPE SIZE
16 ㎜
REEL SIZE
ψ 330
M
ψ330
± 0.5
N
W
ψ97
± 1.0
17.0
+ 1.5
- 0
T
H
K
S
2.2
ψ13.0
+ 0.5
- 0.2
10.6
2.0
±0.5
7
G
R
V