S T A6620 S amHop Microelectronics C orp. Nov. 24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS (ON ). R DS (ON) ( m Ω ) Max ID R ugged and reliable. 25 @ V G S = 10V 40V 7A S urface Mount P ackage. E S D P rotected. 42 @ V G S = 4.5V P DIP -8 1 D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V 7 5.9 A A IDM 30 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ Ta ID 70 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C PD Ta=70 C Operating Junction and S torage Temperature R ange 3 2 W T J , T S TG -55 to 150 C R JA 41.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T A6620 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 2 3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID = 7A 19 25 m ohm V GS =4.5V, ID= 5A 28 42 m ohm OFF CHAR ACTE R IS TICS 40 V ON CHAR ACTE R IS TICS b V DS = 5V, V GS = 10V ID(ON) gFS On-S tate Drain Current Forward Transconductance 1 15 A 13 S 710 PF 110 PF 68 PF 16.5 ns 14 ns 40 ns 6.5 ns V DS =20V, ID =7A,V GS =10V 13.3 nC V DS =20V, ID =7A,V GS =4.5V 6.7 nC 2 nC nC V DS = 5V, ID = 7A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =25V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm V DS =20V, ID = 7 A V GS =4.5V 2 3.7 S T A6620 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =1.7A VSD 0.8 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 20 V G S =10V V G S =5V 16 V G S =4V V G S =4.5V 12 I D , Drain C urrent (A) ID , Drain C urrent(A) 16 8 4 V G S =3.5V 0.5 1.5 1.0 2.0 2.5 3.0 8 -55 C 4 V DS , Drain-to-S ource Voltage (V ) 2 3 4 5 6 F igure 2. Trans fer C haracteris tics 60 R DS (ON) , On-R es is tance Normalized 1.75 50 R DS (on) (m Ω) 1 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 40 V G S =4.5V 30 20 V G S =10V 10 1 25 C T j=125 C 0 0.0 0 0 12 1 4 8 12 16 1.60 1.45 1.15 V G S =4.5V I D =5A 1.00 0.85 20 V G S =10V I D =7A 1.30 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 60 20.0 I D =7A Is , S ource-drain current (A) 50 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T A6620 125 C 40 75 C 30 25 C 20 10 0 25 C 125 C 10.0 5.0 75 C 1.0 0 2 4 6 8 10 0 V G S , G ate-S ource Voltage (V ) 0.3 0.6 0.9 1.2 1.5 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T A6620 V G S , G ate to S ource V oltage (V ) 1200 C , C apacitance (pF ) 1000 6 800 C is s 600 400 C os s 200 C rs s 0 0 10 V DS =20V I D =7A 8 6 4 2 0 5 10 15 20 25 0 30 2 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) V DS , Drain-to S ource Voltage (V ) F igure 10. G ate C harge F igure 9. C apacitance 50 250 100 60 I D , Drain C urrent (A) Tr S witching T ime (ns ) 4 TD(off) TD(on) Tf 10 V D S =20V ,ID=7A 1 30 10 RD it 10 0m ms s 1s 1 DC V G S =10V S ingle P ulse T A =25 C 0.1 0.03 60 100 300 600 6 10 ( L im 10 V G S =10V 1 S ) ON 0.1 R g, G ate R es is tance ( Ω) 1 10 40 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 STA6620 PACKAGE OUTLINE DIMENSIONS PDIP 8 SYMBOL A A1 A2 b c b2 b3 L e D D1 E E1 eA eB MIN .145 .020 .125 .015 .009 .045 .030 .125 .090 .373 .030 .300 .245 .280 .310 INCHES NOM .172 .130 .018 .012 .060 .039 .132 .100 .386 .045 .310 .250 .325 MAX .200 .135 .021 .014 .070 .045 .140 .110 .400 .060 .320 .255 .365 6 MIN 3.68 0.51 3.18 0.38 0.23 1.14 0.76 3.18 2.29 9.47 0.76 7.62 6.22 7.11 7.87 MILLIMETERS NOM MAX 4.37 5.08 3.30 3.43 0.46 0.53 0.30 0.36 1.52 1.78 0.99 1.14 3.35 3.56 2.54 2.79 9.80 10.16 1.14 1.52 7.87 8.13 6.35 6.48 8.26 9.27