SAMHOP STA6620

S T A6620
S amHop Microelectronics C orp.
Nov. 24 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
S uper high dense cell design for low R DS (ON ).
R DS (ON) ( m Ω ) Max
ID
R ugged and reliable.
25 @ V G S = 10V
40V
7A
S urface Mount P ackage.
E S D P rotected.
42 @ V G S = 4.5V
P DIP -8
1
D1
D1
D2
D2
8
7
6
5
1
2
3
S1
G1 S 2
4
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
40
V
Gate-S ource Voltage
V GS
20
V
7
5.9
A
A
IDM
30
A
IS
1.7
A
P arameter
25 C
a
Drain C urrent-C ontinuous @ Ta
ID
70 C
-P ulsed
b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Ta= 25 C
PD
Ta=70 C
Operating Junction and S torage
Temperature R ange
3
2
W
T J , T S TG
-55 to 150
C
R JA
41.5
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T A6620
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 32V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
10
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
2
3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS =10V, ID = 7A
19
25
m ohm
V GS =4.5V, ID= 5A
28
42
m ohm
OFF CHAR ACTE R IS TICS
40
V
ON CHAR ACTE R IS TICS b
V DS = 5V, V GS = 10V
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
1
15
A
13
S
710
PF
110
PF
68
PF
16.5
ns
14
ns
40
ns
6.5
ns
V DS =20V, ID =7A,V GS =10V
13.3
nC
V DS =20V, ID =7A,V GS =4.5V
6.7
nC
2
nC
nC
V DS = 5V, ID = 7A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =25V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 20V
ID = 1 A
V GS = 10V
R GE N = 3.3 ohm
V DS =20V, ID = 7 A
V GS =4.5V
2
3.7
S T A6620
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
C
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
V GS = 0V, Is =1.7A
VSD
0.8
1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
20
V G S =10V
V G S =5V
16
V G S =4V
V G S =4.5V
12
I D , Drain C urrent (A)
ID , Drain C urrent(A)
16
8
4
V G S =3.5V
0.5
1.5
1.0
2.0
2.5
3.0
8
-55 C
4
V DS , Drain-to-S ource Voltage (V )
2
3
4
5
6
F igure 2. Trans fer C haracteris tics
60
R DS (ON) , On-R es is tance
Normalized
1.75
50
R DS (on) (m Ω)
1
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
40
V G S =4.5V
30
20
V G S =10V
10
1
25 C
T j=125 C
0
0.0
0
0
12
1
4
8
12
16
1.60
1.45
1.15
V G S =4.5V
I D =5A
1.00
0.85
20
V G S =10V
I D =7A
1.30
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
1.20
I D =250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25
100 125 150
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
60
20.0
I D =7A
Is , S ource-drain current (A)
50
R DS (on) (m Ω)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T A6620
125 C
40
75 C
30
25 C
20
10
0
25 C
125 C
10.0
5.0
75 C
1.0
0
2
4
6
8
10
0
V G S , G ate-S ource Voltage (V )
0.3
0.6
0.9
1.2
1.5
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T A6620
V G S , G ate to S ource V oltage (V )
1200
C , C apacitance (pF )
1000
6
800
C is s
600
400
C os s
200
C rs s
0
0
10
V DS =20V
I D =7A
8
6
4
2
0
5
10
15
20
25
0
30
2
6
8
10
12
14 16
Qg, T otal G ate C harge (nC )
V DS , Drain-to S ource Voltage (V )
F igure 10. G ate C harge
F igure 9. C apacitance
50
250
100
60
I D , Drain C urrent (A)
Tr
S witching T ime (ns )
4
TD(off)
TD(on)
Tf
10
V D S =20V ,ID=7A
1
30
10
RD
it
10
0m
ms
s
1s
1
DC
V G S =10V
S ingle P ulse
T A =25 C
0.1
0.03
60 100 300 600
6 10
(
L im
10
V G S =10V
1
S
)
ON
0.1
R g, G ate R es is tance ( Ω)
1
10 40
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
F igure 11.s witching characteris tics
Thermal Resistance
Normalized Transient
9
1
0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
STA6620
PACKAGE OUTLINE DIMENSIONS
PDIP 8
SYMBOL
A
A1
A2
b
c
b2
b3
L
e
D
D1
E
E1
eA
eB
MIN
.145
.020
.125
.015
.009
.045
.030
.125
.090
.373
.030
.300
.245
.280
.310
INCHES
NOM
.172
.130
.018
.012
.060
.039
.132
.100
.386
.045
.310
.250
.325
MAX
.200
.135
.021
.014
.070
.045
.140
.110
.400
.060
.320
.255
.365
6
MIN
3.68
0.51
3.18
0.38
0.23
1.14
0.76
3.18
2.29
9.47
0.76
7.62
6.22
7.11
7.87
MILLIMETERS
NOM
MAX
4.37
5.08
3.30
3.43
0.46
0.53
0.30
0.36
1.52
1.78
0.99
1.14
3.35
3.56
2.54
2.79
9.80
10.16
1.14
1.52
7.87
8.13
6.35
6.48
8.26
9.27