S T U405DH S amHop Microelectronics C orp. Nov,20 2007 ver1.0 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 11A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V - 9A R DS (ON) ( m Ω ) Max 45 @ V G S = -10V 33 @ V G S = 10V 45 @ V G S = 4.5V 65 @ V G S = -4.5V D2 D1 D1/D2 S1 G2 G1 G1 S2 G2 S1 TO-252-4L S2 N-ch P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter N-C hannel P-C hannel Unit Drain-S ource Voltage V DS 40 -40 V Gate-S ource Voltage V GS 20 20 V 11 -9 9 -7 A A IDM 45 -36 A IS 7 -6 A 25 C Drain C urrent-C ontinuous @ Tc -P ulsed ID 70 C a Drain-S ource Diode Forward C urrent Tc= 25 C 11 Maximum P ower Dissipation PD Tc= 70 C 7.7 Operating Junction and S torage Temperature R ange W T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 13.6 C /W Thermal R esistance, Junction-to-Ambient R JA 120 C /W THE R MAL C HAR AC TE R IS TIC S 1 S T U405DH N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) OFF CHAR ACTE R IS TICS 40 V uA ON CHAR ACTE R IS TICS a Forward Transconductance 3 V V GS =10V, ID = 8A 24 33 m ohm V GS =4.5V, ID= 6A 30 45 m ohm V DS = 5V, V GS = 4.5V ID(ON) gFS On-S tate Drain Current 1.5 1 20 A 13.8 S 580 PF 82 PF 50 PF 11 ns 10.2 ns 17.3 ns 20 ns V DS =28V, ID =8A,V GS =10V 11.3 nC V DS =28V, ID =8A,V GS =4.5V 5.8 nC 1.2 nC nC V DS = 10V, ID= 8A DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance SWITCHING CHAR ACTER ISTICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =25V, V GS = 0V f =1.0MH Z CRSS b tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm V DS =28V, ID = 8 A V GS =10V 2 2.9 S T U405DH P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -32V, V GS = 0V -1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA Drain-S ource On-S tate R esistance R DS (ON) -40 V uA ON CHAR ACTE R IS TICS a Forward Transconductance -3 V V GS =-10V, ID= -6A 35 45 m ohm V GS =-4.5V, ID= -4A 52 65 m ohm V DS = -5V, V GS = -10V ID(ON) gFS On-S tate Drain Current -1.7 V DS = -10V, ID = -6A -1 -20 A 12 S 980 PF 135 PF 90 PF 12 ns 17 82 ns 35 20.7 ns nC nC nC nC DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS b Turn-On Delay Time tD(ON) R ise Time Turn-Off Delay Time tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Gate-Drain Charge V DS =-25V, V GS = 0V f =1.0MH Z Q gs Q gd V DD = -20V ID = -1A V GS = -10V R GE N = 3.3 ohm V DS =-28V, ID =-6A,V GS =-10V V DS =-28V, ID =-6A,V GS =-4.5V V DS =-28V, ID = -6 A V GS =-10V 3 11 1.5 6.2 ns S T U405DH ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =7A VGS = 0V, Is =-6A VSD N-Ch P-Ch 1.2 -1.2 0.98 -0.9 V Notes a.Pulse Test:Pulse Width㙌300s,Duty Cycle 㙌2%. b.Guaranteed by design,not subject to production testing. N-Channel 40 20 V G S =10V V G S =4.5V V G S =4V 16 I D , Drain C urrent (A) ID , Drain C urrent(A) 32 V G S =3.5V 24 16 V G S =3V 8 V G S =2.5V 0 T j =125 C 12 -55 C 8 25 C 4 0 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 72 R DS (ON) , On-R es is tance Normalized 1.5 60 R DS (on) (m Ω) 1.6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 48 V G S =4.5V 36 V G S =10V 24 12 0 0.8 1 8 16 24 32 1.3 1.2 V G S =10V I D =8A 1.1 1.0 0.0 40 V G S =4.5V I D =6A 1.4 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 4 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage 1.2 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 84 20.0 I D =8A Is , S ource-drain current (A) 70 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U405DH 56 125 C 42 28 25 C 75 C 14 0 0 2 4 6 8 10.0 5.0 125 C 25 C 1.0 0 10 V G S , G ate- S ource Voltage (V ) 75 C 0.4 0.8 1.2 1.6 2.0 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T U405DH V G S , G ate to S ource V oltage (V ) 1200 800 C is s 600 400 C os s 200 C rs s 0 V DS =28V I D =6A 8 6 4 2 0 0 5 10 15 20 25 30 0 2 6 4 V DS , Drain-to S ource Voltage (V ) 8 10 12 14 16 Qg, T otal G ate C harge (nC ) F igure 11. G ate C harge F igure 10. C apacitance 100 200 100 60 T D(off) I D , Drain C urrent (A) S witching T ime (ns ) 80 Tr Tf T D(on) 10 V DS =20V ,ID=1A 1 V G S =10V 1 R DS ( ) ON L im it 1m 10 10 DC 1s 0m s ms s V G S =10V S ingle P ulse T c=25 C 1 0.5 0.1 60 100 300 600 6 10 10 1 R g, G ate R es is tance ( Ω) 10 30 V DS , Drain-S ource V oltage (V ) 2 1 D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 60 F igure 13. Maximum S afe O perating Area F igure 12.s witching characteris tics r(t),Normalized E ffective T ransient T hermal Impedance 6 C , C apacitance (pF ) 1000 10 10 -3 10 -2 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 14. Normalized T hermal T rans ient Impedance C urve 6 10 S T U405DH P-C hannel 25 20 V G S =-4V 25 C V G S =-4.5V 20 16 -I D , Drain C urrent (A) -I D , Drain C urrent(A) -55 C V G S =-8V 15 V G S =-10V V G S =-3V 10 5 0 12 8 T j=125 C 4 0 0 0.5 1 2 1.5 2.5 3 0 -V DS , Drain-to-S ource Voltage (V ) 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 120 R DS (ON) , On-R es is tance Normalized 1.5 100 R DS (on) (m Ω) 1.6 -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 80 V G S =-4.5V 60 40 V G S =-10V 20 0 0.8 1 5 10 15 20 1.3 1.2 V G S =-4.5V I D =-4A 1.1 1.0 0.0 25 V G S =-10V I D =-6A 1.4 0 25 50 75 100 125 150 T j( C ) -I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 7 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 120 20.0 I D =-6A -Is , S ource-drain current (A) 100 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U405DH 80 125 C 75 C 60 25 C 40 20 0 25 C 10.0 75 C 125 C 1.0 0 2 4 6 8 10 0.4 -V G S , G ate- S ource Voltage (V ) 0.6 0.8 1.0 1.2 1.4 -V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T U405DH -V G S , G ate to S ource V oltage (V ) 1200 C is s 800 600 400 C os s 200 C rs s V DS =-28V I D =-6A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 3 12 15 18 21 24 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 70 10 V DS =-20V ,ID=-1A 1 t im i )L T D(on) 50 10 1 0.03 60 100 300 600 6 10 10 DC V G S =-10V 1 10 (O N -I D , Drain C urrent (A) Tr Tf S T D(off) 100 60 RD 400 S witching T ime (ns ) 9 6 -V DS , Drain-to S ource Voltage (V ) 1s 0m ms s V G S =-10V S ingle P ulse T c=25 C 0.1 1 R g, G ate R es is tance ( Ω) 10 30 60 -V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics 2 r(t),Normalized E ffective T ransient T hermal Impedance 6 C , C apacitance (pF ) 1000 10 1 D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 9 10 S T U405DH P A C K A G E OUT L INE DIME NS IONS TO-252-4L A B H K C M J L D S G P REF . Millimeters MIN MAX A 6.40 6.80 B 5.2 5.50 C 6.80 10.20 D 2.20 3.00 1.27 REF. P S 0.50 0.80 G 0.40 0.60 H 2.20 2.40 J 0.45 0.60 K 0 0.15 L 0.90 1.50 M 5.40 5.80 10 S T U405DH TO-252-5L Tape and Reel Data TO-252-5L Carrier Tape ˉ ˇ TO-252-5L Reel UNIT:р 11