STS3411A

STS3411A
Green
Product
S a mHop Microelectronics C orp.
Ver 1.0
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-30V
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
52 @ VGS=-10V
Suface Mount Package.
65 @ VGS=-4.5V
ESD Protected.
-3.6A
D
S OT -23
G
D
S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
-3.6
A
-2.9
A
IDM
-Pulsed
TA=25°C
TA=70°C
ac
c
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
-21
A
TA=25°C
1.25
W
TA=70°C
0.8
W
-55 to 150
°C
100
°C/W
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Jan,13,2014
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STS3411A
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
Min
VGS=0V , ID=-250uA
-30
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Typ
Max
Units
-1
V
uA
±10
uA
-1.1
-1.5
43
52
8.6
52
65
V
m ohm
m ohm
S
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=-250uA
VGS=-10V , ID=-1.8A
VGS=-4.5V , ID=-1.6A
VDS=-10V , ID=-1.8A
-0.5
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
tr
tD(OFF)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
655
119
94
pF
pF
pF
VDD=-15V
ID=-1A
VGS=-10V
RGEN= 6 ohm
9.2
13.5
ns
VDS=-15V,ID=-1.8A,VGS=-10V
VDS=-15V,ID=-1.8A,
VGS=-10V
13.7
6.1
0.9
4.3
VGS=0V,IS=-1A
-0.79
VDS=-15V,VGS=0V
f=1.0MHz
b
VDS=-15V,ID=-1.8A,VGS=-4.5V
ns
ns
73
27
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
-1.2
V
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
Jan,13,2014
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STS3411A
Ver 1.0
25
30
VGS = -10V
-I D, Drain Current(A)
-ID, Drain Current(A)
VGS = -4V
VGS = -6V
24
VGS = -3.5V
VGS = -4.5V
18
VGS = -3V
12
VGS = -2.5V
6
20
15
10
Tj=125 C
5
25 C
0
1.5
1.0
0.5
2.0
2.5
0
3.0
1.4
2.1
2.8
4.2
3.5
-V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
1.5
100
1.4
80
VGS = -4.5V
60
40
VGS = -10V
20
6
1
12
18
24
VGS = -10V
ID = -1.8A
1.3
1.2
VGS = -4.5V
ID = -1.6A
1.1
1.0
0
30
0
25
50
75
100
125
150
T j ( °C )
-I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
Vth, Normalized
Gate-Source Threshold Voltage
0.7
-VDS, Drain-to-Source Voltage(V)
RDS(on), On-Resistance
Normalized
RDS(on)(m Ω)
0
1
-55 C
0
VDS = VGS
ID = -250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
1.15
ID = -250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,13,2014
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STS3411A
Ver 1.0
20.0
180
-Is, Source-drain current(A)
ID = -1.8A
150
RDS(on)(m Ω)
120
90
125 C
60
75 C
30
25 C
10.0
5.0
25 C
125 C
75 C
1.0
0
2
0
6
4
10
8
0.3
0.9
1.2
1.5
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
10
750
-V GS, Gate to Source Voltage(V)
900
Ciss
600
450
300
Coss
150
Crss
0
5
10
15
20
25
30
V DS = -15V
I D = -1.8A
8
6
4
2
0
0
0
4
2
6
8
12
10
14
-VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
-ID, Drain Current(A)
10
Switching Time(ns)
0.6
-VSD, Body Diode Forward Voltage(V)
-VGS, Gate-to-Source Voltage(V)
C, Capacitance(pF)
0
TD(off)
Tf
Tr
10
TD(on)
VDS = -15V,ID = -1A
VGS = -10V
1
R
DS
(
)
ON
L im
it
10
10
1m
10
1 0 ms
0m
s
10
DC s
1
0u
16
us
s
s
VGS = -10V
Single Pulse
TA = 25 C
0.1
0.03
1
10
100
0.1
Rg, Gate Resistance(Ω)
1
10
30
-V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jan,13,2014
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STS3411A
Ver 1.0
Therma l R esis tance
Norm aliz ed Transien t
10
1
0.5
P DM
0.2
0. 1
0.02
0.01
0.01
0.0000 1
t1
0.1
0.05
t2
1.
2.
3.
4.
Single Pulse
0.000 1
0.001
0.01
0. 1
1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
10
100
1000
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
Jan,13,2014
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STS3411A
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
SOT 23
D
E1
1
2
e
b
DETAIL "A"
A1
e1
L
DETAIL "A"
A
E
3
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
L1
L1
MILLIMETERS
INCHES
MIN
MAX
2.700
3.100
2.200
3.000
1.200
1.700
0.850
1.150
1.800
2.100
0.300
0.510
0.080
0.200
0.000
0.150
0.887
1.300
0.450 REF.
0.600 REF.
MIN
MAX
0.106
0.122
0.118
0.087
0.047
0.067
0.033
0.045
0.071
0.083
0.020
0.019
0.008
0.003
0.000
0.006
0.035
0.051
0.018 REF.
0.024 REF.
O
O
10
0
0
O
10
O
Jan,13,2014
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STS3411A
Ver 1.0
SOT23 Tape and Reel Data
SOT23-3L Carrier Tape
TR
FEED DIRECTION
UNIT:р
PACKAGE
SOT23-3L
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
1.75
²0.10
3.50
²0.05
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.22
²0.04
1.22
²0.10
О1.00
+0.05
О1.50
+0.10
8.00
+0.30
-0.10
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
О178
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
О13.5
!!²0.5
10.5
2.00
²0.5
О10.0
5.00
18.00
2.77
²0.10
3.15
²0.10
SOT23-3L Reel
UNIT:р
TAPE SIZE
8р
Jan,13,2014
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