STS3411A Green Product S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 52 @ VGS=-10V Suface Mount Package. 65 @ VGS=-4.5V ESD Protected. -3.6A D S OT -23 G D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -3.6 A -2.9 A IDM -Pulsed TA=25°C TA=70°C ac c a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range -21 A TA=25°C 1.25 W TA=70°C 0.8 W -55 to 150 °C 100 °C/W THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Jan,13,2014 1 www.samhop.com.tw STS3411A Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min VGS=0V , ID=-250uA -30 OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Typ Max Units -1 V uA ±10 uA -1.1 -1.5 43 52 8.6 52 65 V m ohm m ohm S VDS=-24V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-1.8A VGS=-4.5V , ID=-1.6A VDS=-10V , ID=-1.8A -0.5 b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) tr tD(OFF) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge 655 119 94 pF pF pF VDD=-15V ID=-1A VGS=-10V RGEN= 6 ohm 9.2 13.5 ns VDS=-15V,ID=-1.8A,VGS=-10V VDS=-15V,ID=-1.8A, VGS=-10V 13.7 6.1 0.9 4.3 VGS=0V,IS=-1A -0.79 VDS=-15V,VGS=0V f=1.0MHz b VDS=-15V,ID=-1.8A,VGS=-4.5V ns ns 73 27 ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage -1.2 V Notes a.Surface Mounted on FR4 Board of 1 inch2 , 1oz. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. Jan,13,2014 2 www.samhop.com.tw STS3411A Ver 1.0 25 30 VGS = -10V -I D, Drain Current(A) -ID, Drain Current(A) VGS = -4V VGS = -6V 24 VGS = -3.5V VGS = -4.5V 18 VGS = -3V 12 VGS = -2.5V 6 20 15 10 Tj=125 C 5 25 C 0 1.5 1.0 0.5 2.0 2.5 0 3.0 1.4 2.1 2.8 4.2 3.5 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 1.5 100 1.4 80 VGS = -4.5V 60 40 VGS = -10V 20 6 1 12 18 24 VGS = -10V ID = -1.8A 1.3 1.2 VGS = -4.5V ID = -1.6A 1.1 1.0 0 30 0 25 50 75 100 125 150 T j ( °C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 0.7 -VDS, Drain-to-Source Voltage(V) RDS(on), On-Resistance Normalized RDS(on)(m Ω) 0 1 -55 C 0 VDS = VGS ID = -250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 ID = -250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jan,13,2014 3 www.samhop.com.tw STS3411A Ver 1.0 20.0 180 -Is, Source-drain current(A) ID = -1.8A 150 RDS(on)(m Ω) 120 90 125 C 60 75 C 30 25 C 10.0 5.0 25 C 125 C 75 C 1.0 0 2 0 6 4 10 8 0.3 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage 10 750 -V GS, Gate to Source Voltage(V) 900 Ciss 600 450 300 Coss 150 Crss 0 5 10 15 20 25 30 V DS = -15V I D = -1.8A 8 6 4 2 0 0 0 4 2 6 8 12 10 14 -VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 -ID, Drain Current(A) 10 Switching Time(ns) 0.6 -VSD, Body Diode Forward Voltage(V) -VGS, Gate-to-Source Voltage(V) C, Capacitance(pF) 0 TD(off) Tf Tr 10 TD(on) VDS = -15V,ID = -1A VGS = -10V 1 R DS ( ) ON L im it 10 10 1m 10 1 0 ms 0m s 10 DC s 1 0u 16 us s s VGS = -10V Single Pulse TA = 25 C 0.1 0.03 1 10 100 0.1 Rg, Gate Resistance(Ω) 1 10 30 -V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jan,13,2014 4 www.samhop.com.tw STS3411A Ver 1.0 Therma l R esis tance Norm aliz ed Transien t 10 1 0.5 P DM 0.2 0. 1 0.02 0.01 0.01 0.0000 1 t1 0.1 0.05 t2 1. 2. 3. 4. Single Pulse 0.000 1 0.001 0.01 0. 1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Figure 13. Normalized Thermal Transient Impedance Curve Jan,13,2014 5 www.samhop.com.tw STS3411A Ver 1.0 PACKAGE OUTLINE DIMENSIONS SOT 23 D E1 1 2 e b DETAIL "A" A1 e1 L DETAIL "A" A E 3 SYMBOLS D E E1 e e1 b C A A1 L L1 L1 MILLIMETERS INCHES MIN MAX 2.700 3.100 2.200 3.000 1.200 1.700 0.850 1.150 1.800 2.100 0.300 0.510 0.080 0.200 0.000 0.150 0.887 1.300 0.450 REF. 0.600 REF. MIN MAX 0.106 0.122 0.118 0.087 0.047 0.067 0.033 0.045 0.071 0.083 0.020 0.019 0.008 0.003 0.000 0.006 0.035 0.051 0.018 REF. 0.024 REF. O O 10 0 0 O 10 O Jan,13,2014 6 www.samhop.com.tw STS3411A Ver 1.0 SOT23 Tape and Reel Data SOT23-3L Carrier Tape TR FEED DIRECTION UNIT:р PACKAGE SOT23-3L A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 1.75 ²0.10 3.50 ²0.05 4.00 ²0.10 4.00 ²0.10 2.00 ²0.05 0.22 ²0.04 1.22 ²0.10 О1.00 +0.05 О1.50 +0.10 8.00 +0.30 -0.10 REEL SIZE M N W W1 H K S G R V О178 О178 ²1 О60 ²1 9.00 ²0.5 12.00 ²0.5 О13.5 !!²0.5 10.5 2.00 ²0.5 О10.0 5.00 18.00 2.77 ²0.10 3.15 ²0.10 SOT23-3L Reel UNIT:р TAPE SIZE 8р Jan,13,2014 7 www.samhop.com.tw