STU404D

STU404D
Green
Product
SamHop Microelectronics Corp.
Sep 14 2006 ver1.1
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
(N-Channel)
PRODUCT SUMMARY
RDS(ON) ( m Ω )
VDSS
ID
40V
16A
(P-Channel)
PRODUCT SUMMARY
Max
VDSS
ID
-40V
-12A
RDS(ON) ( m Ω )
30 @ VGS = 10V
Max
48 @ VGS = -10V
40 @ VGS = 4.5V
65 @ VGS = -4.5V
D2
D1
D1/D2
S1
G2
G1
G1
S2
G2
S1
TO-252-4L
S2
N-ch
P-ch
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol
Parameter
N-Channel P-Channel
Unit
Drain-Source Voltage
VDS
40
-40
V
Gate-Source Voltage
VGS
20
20
V
16
-12
13.8
-10
A
A
IDM
50
-50
A
IS
8
-6
A
25 C
Drain Current-Continuous @Tc
-Pulsed
ID
70 C
a
Drain-Source Diode Forward Current
Tc= 25 C
11
Maximum Power Dissipation
PD
Tc= 70 C
7.7
Operating Junction and Storage
Temperature Range
W
TJ, TSTG
-55 to 175
C
Thermal Resistance, Junction-to-Case
R JC
13.6
C /W
Thermal Resistance, Junction-to-Ambient
R JA
120
C /W
THERMAL CHARACTERISTICS
1
S T U404D
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 32V, V GS = 0V
1
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
OFF CHAR ACTE R IS TICS
40
V
uA
ON CHAR ACTE R IS TICS a
Forward Transconductance
3
V
V GS =10V, ID = 8A
22
30
m ohm
V GS =4.5V, ID= 6A
30
40
m ohm
V DS = 5V, V GS = 4.5V
ID(ON)
gFS
On-S tate Drain Current
1.8
V DS = 10V, ID= 8A
1
20
A
20
S
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
Gate resistance
Rg
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
885 1050
PF
105
PF
65
PF
0.32
ohm
16
ns
12
ns
28
ns
7
ns
V DS =28V, ID =8A,V GS =10V
17
nC
V DS =28V, ID =8A,V GS =4.5V
8.6
nC
2.2
nC
nC
V DS =25V, V GS = 0V
f =1.0MH Z
V GS =0V, V DS = 0V, f=1.0MH Z
b
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 20V
ID = 1 A
V GS = 10V
R GE N = 3.3 ohm
V DS =28V, ID = 8 A
V GS =10V
2
4.8
S T U404D
P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -32V, V GS = 0V
-1
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
Drain-S ource On-S tate R esistance
R DS (ON)
-40
V
uA
ON CHAR ACTE R IS TICS a
Forward Transconductance
-3
V
V GS =-10V, ID= -6A
40
48
m ohm
V GS =-4.5V, ID= -4A
50
65
m ohm
V DS = -5V, V GS = -10V
ID(ON)
gFS
On-S tate Drain Current
-1.6
-1
-20
A
12
S
980 1150
PF
135
PF
90
PF
2.2
ohm
12
ns
17
ns
82
ns
35
ns
V DS =-28V, ID =-6A,V GS =-10V
20.7
nC
V DS =-28V, ID =-6A,V GS =-4.5V
11
nC
1.5
nC
nC
V DS = -10V, ID = -6A
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
Gate resistance
Rg
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =-25V, V GS = 0V
f =1.0MH Z
V GS =0V, V DS = 0V, f=1.0MH Z
b
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = -20V
ID = -1A
V GS = -10V
R GE N = 3.3 ohm
V DS =-28V, ID = -6 A
V GS =-10V
3
6.2
S T U404D
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
C
Min Typ Max Unit
Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VGS = 0V, Is =8A
VGS = 0V, Is =-6A
VSD
N-Ch
P-Ch
1.2
-1.2
0.98
-0.9
V
Notes
a.Pulse Test:Pulse Widthś300ijs,Duty Cycle ś2%.
b.Guaranteed by design,not subject to production testing.
N-Channel
25
20
V G S =4V
16
V G S =4.5V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
20
V G S =8V
15
V G S =10V
10
5
0
V G S =3V
12
8
25 C
4
0
0
0.5
1
2
1.5
2.5
3
0
V DS , Drain-to-S ource Voltage (V )
1.6
2.4
3.2
4.0
4.8
F igure 2. Trans fer C haracteris tics
60
R DS (ON) , On-R es is tance
Normalized
1.5
50
R DS (on) (m Ω)
0.8
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
40
V G S =4.5V
30
20
V G S =10V
10
0
-55 C
T j=125 C
1
5
10
15
20
1.3
1.2
V G S =4.5V
I D =6A
1.1
1.0
0.0
25
V G S =10V
I D =8A
1.4
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
4
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.2
V DS =V G S
I D =250uA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
1.40
I D =250uA
1.30
1.20
1.10
1.00
0.90
0.80
-50 -25
100 125 150
0
50
75
100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
125 C
I D =8A
Is , S ource-drain current (A)
100
80
60
75 C
125 C
40
25 C
20
0
10.0
25 C
75 C
1.0
0
2
4
6
8
10
0.4
V G S , G ate- S ource Voltage (V )
T j(max)=175 C
T A =25 C
120
80
40
0
0.0001
0.001
0.01
0.1
0.8
1.0
1.2
1.4
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
200
160
0.6
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
P ower (W )
25
T j, J unction T emperature ( C )
120
R DS (on) (m Ω)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T U404D
1
F igure 9. S ingle P uls e P ower R ating
J unction-to-C as e
5
S T U404D
C is s
800
600
400
C os s
200
10
V DS =28V
I D =8A
8
6
4
2
C rs s
0
0
0
5
10
15
20
25
30
0
3
9
6
V DS , Drain-to S ource Voltage (V )
12
15
18
21 24
Qg, T otal G ate C harge (nC )
F igure 11. G ate C harge
F igure 10. C apacitance
100
200
Tr
100
60
I D , Drain C urrent (A)
S witching T ime (ns )
80
T D(off)
T D(on)
Tf
10
V DS =20V ,ID=1A
1
V G S =10V
1
R
DS
(
)
ON
L im
it
1m
10
1s
DC
10
0m
s
ms
s
V G S =10V
S ingle P ulse
T c=25 C
1
0.5
0.1
60 100 300 600
6 10
10
1
R g, G ate R es is tance ( Ω)
10
30
V DS , Drain-S ource V oltage (V )
2
1
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
0.01
10
-5
10
-4
60
F igure 13. Maximum S afe
O perating Area
F igure 12.s witching characteris tics
r(t),Normalized E ffective
T ransient T hermal Impedance
6
C , C apacitance (pF )
1000
V G S , G ate to S ource V oltage (V )
1200
10
-3
10
-2
10
-1
R įJ A (t)=r (t) * R įJ A
R įJ A =S ee Datas heet
T J M-T A = P DM* R įJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 14. Normalized T hermal T rans ient Impedance C urve
6
10
S T U404D
P-C hannel
25
20
V G S =-4V
25 C
V G S =-4.5V
20
16
-I D , Drain C urrent (A)
-I D , Drain C urrent(A)
-55 C
V G S =-8V
15
V G S =-10V
V G S =-3V
10
5
0
12
8
T j=125 C
4
0
0
0.5
1
2
1.5
2.5
3
0
-V DS , Drain-to-S ource Voltage (V )
2.4
3.2
4.0
4.8
F igure 2. Trans fer C haracteris tics
120
R DS (ON) , On-R es is tance
Normalized
1.5
100
R DS (on) (m Ω)
1.6
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
80
V G S =-4.5V
60
40
V G S =-10V
20
0
0.8
1
5
10
15
20
1.3
1.2
V G S =-4.5V
I D =-4A
1.1
1.0
0.0
25
V G S =-10V
I D =-6A
1.4
0
25
50
75
100
125
150
T j( C )
-I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
7
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
V DS =V G S
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
1.15
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125 150
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
120
20.0
I D =-6A
-Is , S ource-drain current (A)
R DS (on) (m Ω)
100
80
125 C
75 C
60
25 C
40
20
0
25 C
10.0
75 C
125 C
1.0
0
2
4
6
8
10
0.4
-V G S , G ate- S ource Voltage (V )
T j(max)=175 C
T A =25 C
120
80
40
0
0.0001
0.001
0.01
0.1
0.8
1.0
1.2
1.4
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
200
160
0.6
-V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
P ower (W )
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T U404D
1
F igure 9. S ingle P uls e P ower R ating
J unction-to-C as e
8
S T U404D
-V G S , G ate to S ource V oltage (V )
1200
C is s
800
600
400
C os s
200
C rs s
V DS =-28V
I D =-6A
8
6
4
2
0
0
0
5
10
15
20
25
30
0
3
12
15
18
21 24
Qg, T otal G ate C harge (nC )
F igure 10. C apacitance
F igure 11. G ate C harge
70
T D(on)
10
V DS =-20V ,ID=-1A
1
im i
t
50
)L
Tf
(O N
-I D , Drain C urrent (A)
Tr
100
60
10
1
0.03
60 100 300 600
6 10
ms
10
DC
V G S =-10V
1
10
S
T D(off)
RD
400
S witching T ime (ns )
9
6
-V DS , Drain-to S ource Voltage (V )
0
1 s ms
V G S =-10V
S ingle P ulse
T c=25 C
0.1
1
R g, G ate R es is tance ( Ω)
10
30
60
-V DS , Drain-S ource V oltage (V )
F igure 13. Maximum S afe
O perating Area
F igure 12.s witching characteris tics
2
r(t),Normalized E ffective
T ransient T hermal Impedance
6
C , C apacitance (pF )
1000
10
1
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
S ING LE P ULS E
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
R įJ A (t)=r (t) * R įJ A
R įJ A =S ee Datas heet
T J M-T A = P DM* R įJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 14. Normalized T hermal T rans ient Impedance C urve
9
10
S T U404D
P A C K A G E OUT L INE DIME NS IONS
TO-252-4L
A
B
H
K
C
M
J
L
D
S
G
P
REF .
Millimeters
MIN
MAX
A
6.40
6.80
B
5.2
5.50
C
6.80
10.20
D
2.20
3.00
1.27 REF.
P
S
0.50
0.80
G
0.40
0.60
H
2.20
2.40
J
0.45
0.60
K
0
0.15
L
0.90
1.50
M
5.40
5.80
10
S T U404D
TO-252-4L Tape and Reel Data
TO-252-4L Carrier Tape
ˉ
ˇ
TO-252-4L Reel
UNIT:р
11