STM8309

STM8309
Green
Product
SamHop Microelectronics Corp.
Oct.13, 2006
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
(N-Channel)
PRODUCT SUMMARY
VDSS
ID
30V
7A
RDS(ON) ( m Ω )
(P-Channel)
PRODUCT SUMMARY
Max
VDSS
ID
-30V
-6A
RDS(ON) ( m Ω )
Max
35 @ VGS = -10V
23 @ VGS = 10V
30 @ VGS = 4.5V
52 @ VGS = -4.5V
D1
D1
D2
D2
8
7
6
5
SO-8
1
1
2
3
4
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol
Parameter
N-Channel P-Channel
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
20
20
V
ID
7
-6
A
IDM
28
-24
A
IS
1.7
-1.7
A
a
J=25 C
Drain Current-Continuous @T
b
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
a
a
PD
Operating Junction and Storage
Temperature Range
TJ, TSTG
2.0
-55 to 150
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R JA
1
62.5
C /W
S T M8309
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 24V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
10
uA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
1.9
3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS =10V, ID =7A
17
23 m ohm
V GS =4.5V, ID =5A
23
30 m ohm
OFF CHAR ACTE R IS TICS
30
V
ON CHAR ACTE R IS TICS b
V DS = 15V, V GS = 10V
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
1.0
20
A
14
S
680
PF
190
PF
115
PF
12
ns
17.5
ns
41
ns
15
ns
V DS =15V, ID =7A,V GS =10V
11
nC
V DS =15V, ID =7A,V GS =4.5V
5.5
nC
1.7
nC
3.3
nC
V DS = 10V, ID =7A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =15V, V GS = 0V
f =1.0MH Z
c
V DD = 15V,
ID = 7A,
R L=2.1 ohm,
V GS = 10V,
R GEN = 6 ohm
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DS =15V, ID = 7A,
V GS =10V
2
S T M8309
P-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted)
Parameter
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -24V, V GS = 0V
-1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
10
uA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
-1.9
-3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS =-10V, ID= -5A
29
35 m ohm
V GS = -4.5V, ID= -4A
44
52 m ohm
-30
V
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
V DS = -15V, V GS = -10V
-1
-20
A
8.5
S
870
PF
225
PF
125
PF
12
ns
18
ns
70
ns
40
ns
V DS =-15V,ID=-5A,V GS =-10V
15
nC
V DS =-15V,ID=-5A,V GS =-4.5V
7.5
nC
V DS =-15V, ID = - 5A,
V GS =-10V
1.7
nC
4.5
nC
V DS = -15V, ID = - 5A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =-15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V D = -15V,
R L=15 ohm,
ID = -1A,
V GE N = -10V,
R GEN =6 ohm
3
S T M8309
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
C
Min Typ Max Unit
Condition
Symbol
b
VGS = 0V, Is =1.7A
VGS = 0V, Is =-1.7A
VSD
N-Ch
P-Ch
1.2
-1.2
0.8
-0.8
5
Notes
a.Surface Mounted on FR4 Board,tІ10sec.
b.Pulse Test:Pulse WidthІ300Ӵs,Duty Cycle І 2%.
c.Guaranteed by design,not subject to production testing.
N-Channel
20
40
VGS=5V
VGS=10V
16
ID, Drain Current (A)
ID, Drain Current(A)
VGS=4V
VGS=4.5V
32
24
VGS=3.5V
16
VGS=3V
8
12
8
-55 C
4
0.5
1
1.5
2
2.5
0
3
0.7
VDS, Drain-to-Source Voltage (V)
2.1
2.8
3.5
4.2
Figure 2. Transfer Characteristics
60
R DS (ON) , On-R es is tance
Normalized
1.5
50
R DS (on) (m Ω)
1.4
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
40
30
V G S =4.5V
20
V G S =10V
10
1
25 C
Tj=125 C
0
0
0
1
8
16
24
32
1.4
V G S =10V
I D =7A
1.3
1.2
V G S =4.5V
I D =5A
1.1
1.0
0.9
-25
40
0
25
50
75
100
125 150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
4
V
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125 150
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
49
20.0
I D =7A
Is , S ource-drain current (A)
42
R DS (on) (m Ω)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T M8309
35
75 C
125 C
28
21
25 C
14
7
10.0
75 C
125 C
25 C
1.0
0
2
4
6
8
10
0.4
V G S , G ate-S ource Voltage (V )
0.6
0.8
1.0
1.2
1.4
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5
S T M8309
V G S , G ate to S ource V oltage (V )
900
750
450
300
Coss
150
Crss
V DS =15V
I D =7A
8
6
4
2
0
0
0
5
10
15
20
25
0
30
2
6
4
8
10
12
14 16
VDS, Drain-to Source Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 8. C apacitance
F igure 9. G ate C harge
40
250
Tr
100
60
T D(off)
I D , Drain C urrent (A)
S witching T ime (ns )
6
C, Capacitance (pF)
Ciss
600
10
Tf
T D(on)
10
V DS =15V ,ID=7A
1
10
RD
it
10m
s
ms
1s
DC
V G S =10V
S ingle P ulse
T A =25 C
0.1
0.1
60 100 300 600
im
11
0.03
6 10
)L
100
V G S =10V
1
ON
S(
1
10
30 50
R g, G ate R es is tance ( Ω)
F igure 11.s witching characteris tics
6
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
S T M8309
P-Channel
20
VGS=10V
VGS=5V
-I D , Drain C urrent (A)
125 C
VGS=4V
16
16
-I D , Drain C urrent (A)
20
VGS=4.5V
12
VGS=3.5V
8
VGS=3V
4
25 C
8
-55 C
4
0
0
0
0.5
1
1.5
2
2.5
0
3
0.9
1.8
2.7
3.6
4.5
5.4
-V DS , Drain-to-S ource Voltage (V )
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
1.5
R DS (ON) , On-R es is tance
Normalized
90
75
R DS (on) (m Ω)
12
60
V G S =-4.5V
45
30
V G S =-10V
V G S =-10V
I D =-5A
1.3
1.2
V G S =-4.5V
I D =-4A
1.1
1.0
15
1
1.4
1
4
8
12
16
0
20
25
50
75
100
125
150
T j( C )
T j, J unction T emperature ( C )
-I D , Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
7
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.2
V DS =V G S
I D =-250uA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
1.3
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
100
I D =-5A
-Is , S ource-drain current (A)
90
R DS (on) (m Ω)
5
V th, Normalized
G ate-S ource T hres hold V oltage
S T M8309
80
60
125 C
40
0
25 C
75 C
20
10.0
125 C
25 C
75 C
1.0
0
2
4
6
8
0
10
-V G S , G ate- S ource Voltage (V )
0.25
0.5
0.75
1.0
1.25
-V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
8
S T M8309
-V G S , G ate to S ource V oltage (V )
1200
1000
C, Capacitance (pF)
Ciss
6
800
600
400
Coss
200
Crss
5
10
15
20
25
6
4
2
30
2
0
4
6
8
10
12
14
VDS, Drain-to Source Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 8. C apacitance
F igure 9. G ate C harge
16
50
250
100
60
-I D , Drain C urrent (A)
Tr
S witching T ime (ns )
V DS =-15 V
I D =-5A
8
0
0
0
10
T D(off)
Tf
T D(on)
10
V D S = -15V,I D=-1A
1
10
RD
60 100 300 600
im
it
10m
11
s
ms
1s
DC
0.1
V G S =-10V
S ingle P ulse
T A =25 C
0.03
6 10
)L
100
V G S = -10 V
1
ON
S(
0.1
1
10
50
-V DS , B ody Diode F orward V oltage (V )
R g, G ate R es is tance ( Ω)
F igure 11.s witching characteris tics
9
F igure 10. Maximum S afe
O perating Area
S T M8309
V DD
ton
V IN
D
5
tf
90%
90%
V OUT
V OUT
VG S
RGE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 14. S witching Waveforms
F igure 13. S witching T es t C ircuit
N-C hannel
1
Thermal Resistance
Normalized Transient
9
0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
P-C hannel
Thermal Resistance
Normalized Transient
9
1
0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
10
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T M8309
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45±
e
B
0.05 TYP.
A1
0.008
TYP.
0.016 TYP.
H
MILLIME T E R S
INC HE S
S Y MB OLS
MIN
A
A1
D
E
H
L
1.35
0.10
4.80
3.81
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
11
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
STM8309
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:р
PACKAGE
SOP 8N
150п
A0
6.40
B0
5.20
K0
D0
D1
2.10
ӿ1.5
(MIN)
ӿ1.5
+0.1
- 0.0
W
E
E1
E2
P0
P1
P2
T
12.0
²0.3
1.75
5.5²0.05
8.0
4.0
2.0²0.05
0.3²0.05
W1
H
K
S
G
R
SO-8 Reel
UNIT:р
TAPE SIZE
REEL SIZE
M
N
12 р
ӿ330
330
² 1
62
²1.5
12.4+ 0.2 16.8- 0.4
12
ӿ12.75
+ 0.15
2.0²0.15
V