S T U/D420S S amHop Microelectronics C orp. J uly 05 , 2006 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID ( mW) R DS (ON) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable. 24 @ V G S = 10V 40V TO-252 and TO-251 P ackage. 24A 30 @ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V ID 24 A IDM 75 A Drain-S ource Diode Forward C urrent IS 8 A Maximum P ower Dissipation @ Tc=25 C PD 50 W Operating and S torage Temperature R ange T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W P arameter Drain C urrent-C ontinuous b -P ulsed a @ T C =25 C THE R MAL C HAR AC TE R IS TIC S 1 S T U/D420S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.9 3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID = 10A 17 24 m ohm V GS =4.5V, ID= 8A 23.5 30 m ohm On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 40 V ON CHAR ACTE R IS TICS a Forward Transconductance DYNAMIC CHAR ACTE R IS TICS C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time 30 A 16 S 750 PF 110 PF 65 PF 3 ohm 13 ns 10 ns 37 ns 12 ns V DS =20V, ID =10A,V GS =10V 15 nC V DS =20V, ID =10A,V GS =4.5V 7 nC 2.5 nC nC V DS = 10V, ID = 10A b Input Capacitance Turn-On Delay Time V DS = 10V, V GS = 10V 1 V DS =15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z b tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 15V ID = 1 A V GS = 10V R GE N = 3 ohm V DS =20V, ID = 10A V GS =10V 2 4 S T U/D420S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.84 V GS = 0V, Is = 8A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 30 15 V G S =4.5 T j=125 C 12 V G S =4V V G S =10V 20 I D , Drain C urrent (A) ID , Drain C urrent(A) 25 V G S =8V 15 V G S =3.5V 10 V G S =3V 5 0 0 0.5 1.5 1 2 2.5 9 25 C 6 3 0 3 -55 C 0 V DS , Drain-to-S ource Voltage (V ) 2.1 2.8 3.5 4.2 F igure 2. Trans fer C haracteris tics 1.75 30 R DS (ON) , On-R es is tance Normalized 36 R DS (on) (m W) 1.4 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =4.5V 24 18 V G S =10V 12 6 0 0.7 0 6 12 18 24 1.60 1.30 1.15 V G S =4.5V I D =8A 1.0 0.8 -25 30 V G S =10V I D =10A 1.45 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.2 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 54 20.0 I D =10A Is , S ource-drain current (A) 45 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D420S 36 125 C 27 18 25 C 75 C 9 0 125 C 10.0 25 C 75 C 1.0 0 2 4 6 8 10 0.2 V G S , G ate- S ource Voltage (V ) 0.4 0.6 0.8 1.0 1.2 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D420S C is s C , C apacitance (pF ) 750 600 450 300 150 C os s C rs s 0 0 10 V DS =20V I D =10A 8 6 4 2 0 5 10 15 20 25 0 30 3 V DS , Drain-to S ource Voltage (V ) 9 6 12 15 18 21 24 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 100 220 100 60 I D , Drain C urrent (A) 80 S witching T ime (ns ) 6 V G S , G ate to S ource V oltage (V ) 900 T D(on) T D(off) Tr Tf 10 V DS =15V ,ID=1A 1 V G S =10V 1 6 10 R R g, G ate R es is tance ( W) (O N) L im it 1m DC 10 1 0.5 0.1 60 100 300 600 DS 10 1 0 ms 0m 1s s s V G S =10V S ingle P ulse T c=25 C 1 10 30 60 V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 5 F igure 12. Maximum S afe O perating Area S T U/D420S V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 10 S T U/D420S 7 S T U/D420S 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 8 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D420S TO-252 Tape and Reel Data TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 B0 K0 6.80 ±0.1 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M ψ330 ± 0.5 N W ψ97 ± 1.0 17.0 + 1.5 - 0 T H K S 2.2 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 9 G R V