SAMHOP STU600S

S T U/D600S
S amHop Microelectronics C orp.
Aug 25,2006
N-C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m W ) Max
R ugged and reliable.
55 @ V G S = 10V
60V
16A
TO-252 and TO-251 P ackage.
70 @ V G S = 4.5V
D
D
G
D
G
S
S TU S E R IE S
TO-252AA(D-P AK)
S
G
S TD S E R IE S
TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATINGS
(T A =25 C unles s otherwis e noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
60
V
Gate-S ource Voltage
V GS
20
V
P arameter
25 C
a
Drain C urrent-C ontinuous @ Ta
-P ulsed
70 C
b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
10.7
IDM
30
A
IS
15
A
Ta= 25 C
Ta=70 C
Operating Junction and S torage
Temperature R ange
16
A
A
ID
PD
50
35
W
T J , T S TG
-55 to 175
C
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
THE R MAL C HAR AC TE R IS TIC S
S T U/D600S
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 48V, V GS = 0V
1
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
On-S tate Drain Current
ID(ON)
gFS
OFF CHAR ACTE R IS TICS
60
V
uA
ON CHAR ACTE R IS TICS b
Forward Transconductance
1.8
3.0
V GS =10V, ID = 8A
45
55 m ohm
V GS =4.5V, ID= 4A
50
70
V DS = 5V, V GS = 10V
1.0
20
V
m ohm
A
16
S
670
PF
72
PF
45
PF
3.2
ohm
13
ns
10
ns
25
ns
9
ns
V DS =30V, ID =8A,V GS =10V
14.2
nC
V DS =30V, ID =8A,V GS =4.5V
7
nC
1.7
nC
3.8
nC
V DS = 10V, ID =8A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
Gate resistance
Rg
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =30V, V GS = 0V
f =1.0MH Z
V GS =0V, V DS = 0V, f=1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 30V
ID = 8 A
V GS = 10V
R GE N = 3.3 ohm
V DS =30V, ID = 8A
V GS =10V
2
S T U/D600S
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Diode Forward Voltage
V GS = 0V, Is = 10A
VSD
0.9
1.3
V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
30
20
V G S =4.5V
V G S =10V
16
V G S =8V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
24
V G S =3.5V
18
12
V G S =3V
6
0
0
25 C
12
8
4
T j=125 C
0
0.5
1
2
1.5
2.5
3
-55 C
0
V DS , Drain-to-S ource Voltage (V )
2.4
3.2
4.8
4.0
F igure 2. Trans fer C haracteris tics
120
2.0
R DS (ON) , On-R es is tance
Normalized
100
R DS (on) (m W)
1.6
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
80
V G S =4.5V
60
40
V G S =10V
20
1
0.8
1
6
12
18
24
1.8
1.4
1.2
V G S =10V
I D =8A
1.0
0.0
30
V G S =4.5V
I D =4A
1.6
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
1.3
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
144
20.0
I D =8A
Is , S ource-drain current (A)
120
R DS (on) (m W)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T U/D600S
96
125 C
72
48
75 C
25 C
24
0
0
2
4
6
8
25 C
75 C
1.0
0.2
10
V G S , G ate- S ource Voltage (V )
125 C
10.0
0.4
0.6
0.8
1.0
1.2
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T U/D600S
V G S , G ate to S ource V oltage (V )
1200
800
C is s
600
400
C os s
200
0
C rs s
0
V DS =30V
I D =8A
8
6
4
2
0
5
10
15
20
25
30
0
2
V DS , Drain-to S ource Voltage (V )
8
6
10
12
14 16
F igure 10. G ate C harge
220
60
100
60
T D(off)
I D , Drain C urrent (A)
S witching T ime (ns )
4
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
Tr
T D(on)
Tf
10
V DS =30V ,ID=8A
1
10
R
(O
N)
L im
it
10
DC
10m
0m
s
s
1s
V G S =10V
S ingle P ulse
T A =25 C
0.1
0.03
60 100 300 600
6 10
DS
1
V G S =10V
1
0.1
1
R g, G ate R es is tance ( W)
10
60
V DS , Drain-S ource V oltage (V )
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
0.01
10
-5
10
-4
80
F igure 12. Maximum S afe
O perating Area
F igure 11.s witching characteris tics
r(t),Normalized E ffective
T ransient T hermal Impedance
6
C , C apacitance (pF )
1000
10
10
-3
10
-2
10
-1
t2
R θJ A (t)=r (t) * R θJ A
R θJ A =S ee Datas heet
T J M-T A = P DM* R θJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
10
S T U/D600S
6
S T U/D600S
5
95
7
84
L2
9
6.00
35
05
85
0.94
4
3
0
9
36
2.29
9.70
1.425
0.650
0.600
BSC
1
1.625
0.850
REF.
0.090
82
56
6
0.024
7
9
7
30
3
3
41
3
3
5
1
4
BSC
398
0.064
33
REF.
S T U/D600S
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:㎜
PACKAGE
TO-252
(16 ㎜)
A0
6.80
±0.1
B0
K0
10.3
±0.1
2.50
±0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ψ2
ψ1.5
+ 0.1
- 0
16.0
0.3±
1.75
0.1±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
TO-252 Reel
S
UNIT:㎜
TAPE SIZE
16 ㎜
REEL SIZE
ψ 330
M
ψ330
± 0.5
N
W
ψ97
± 1.0
17.0
+ 1.5
- 0
T
H
K
S
2.2
ψ13.0
+ 0.5
- 0.2
10.6
2.0
±0.5
8
G
R
V