STS3415

STS3415
Gr
Pr
S a mHop Microelectronics C orp.
Ver 2.0
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
46 @ VGS=-4.5V
Suface Mount Package.
47 @ VGS=-4.0V
-20V
-4.2A
ESD Protected.
49 @ VGS=-3.7V
54 @ VGS=-3.1V
61 @ VGS=-2.5V
D
S OT -23
G
D
S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
Limit
Units
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±10
V
ID
Drain Current-Continuous
-4.2
A
-3.4
A
-16
A
TA=25°C
1.25
W
TA=70°C
0.8
W
-55 to 150
°C
100
°C/W
IDM
-Pulsed
TA=25°C
TA=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
May,22,2012
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STS3415
Ver 2.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Conditions
Min
VGS=0V , ID=-250uA
-20
Typ
1
±10
VDS=-16V , VGS=0V
VGS= ±10V , VDS=0V
Drain-Source On-State Resistance
VDS=VGS , ID=-1mA
VGS=-4.5V , ID=-2.1A
VGS=-4.0V , ID=-2.1A
VGS=-3.7V , ID=-2.1A
Forward Transconductance
VGS=-3.1V , ID=-2.1A
VGS=-2.5V , ID=-2.1A
VDS=-5V , ID=-2.1A
Max
-0.5
28
29
-0.7
-1.5
35
36
46
30
32
37
40
45
11
35
47
49
54
61
Units
V
uA
uA
V
m ohm
m ohm
m ohm
m ohm
m ohm
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
VDS=-10V,VGS=0V
f=1.0MHz
Gate-Source Charge
Qgd
Gate-Drain Charge
pF
pF
pF
85
ns
225
ns
1310
ns
c
VDD=-16V
ID=-2.1A
VGS=-4.5V
RGEN= 6 ohm
Total Gate Charge
Qgs
613
159
141
VDS=-16V,ID=-4.2A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=-1.1A
605
ns
11.8
nC
0.85
nC
4.7
nC
-0.8
-1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 1%.
_ 10us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
May,22,2012
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STS3415
Ver 2.0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
2
Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10
R
N
(O
DS
t
imi
)L
10us
100us
1ms
1
10ms
1s
0.1
VGS=-4.5V
Single Pulse
TA=25 C
0.01
0.1
DC
1
10
-VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
-ID - Drain Current - A
100
Mounted on FR-4 board of
1 inch2 , 2oz
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
May,22,2012
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STS3415
Ver 2.0
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
20
4.0 V
16
-ID - Drain Current - A
-ID - Drain Current - A
VGS = 4.5 V
3.7 V
12
3.1 V
2.5 V
8
10
125°C
1
75°C
25°C
0.1
4
TA = -25°C
0
0.01
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
-VGS(off) - Gate to Source Cut-off Voltage - V
1.0
ID = -1.0mA
0.9
0.8
0.7
0.6
0.5
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = -2.5 V
-3.1 V
-3.7 V
-4.0 V
-4.5 V
40
20
1
10
3
TA = -25°C
10
25°C
75°C
1
125°C
0.1
0.01
0.01
0.1
1
10
100
-ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
0
0.1
2.5
100
Tch - Channel Temperature - °C
60
2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
1.5
-VGS - Gate to Source Voltage - V
-VDS - Drain to Source Voltage - V
0.4
-50
1
100
-ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
ID = -4.2A
60
40
20
0
0
2
4
6
8
10
12
-VGS - Gate to Source Voltage - V
May,22,2012
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STS3415
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
90
ID = -2.1A
VGS = -2.5 V
-3.1 V
-3.7 V
-4.0 V
-4.5 V
75
60
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 2.0
45
30
15
0
0
-50
50
100
1000
Ciss
Coss
Crss
100
10
0.1
150
-VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = -16.0 V
VGS = -4.5 V
RG = 6 Ω
1000
tf
tr
100
td(on)
4
10
VDD = -16.0 V
-10 V
3
-4 V
2
1
ID = -4.2 A
0
1
100
DYNAMIC INPUT CHARACTERISTICS
SWITCHING CHARACTERISTICS
10
0.1
10
-VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
td(off)
1
0
2
4
6
8
10
12
QG - Gate Charge -nC
-ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-IF - Diode Forward Current - A
100
VGS = 0 V
10
1
0.1
0.01
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
-VF(S-D) - Source to Drain Voltage - V
May,22,2012
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STS3415
Ver 2.0
PACKAGE OUTLINE DIMENSIONS
SOT 23
D
E1
1
2
e
b
DETAIL "A"
A1
e1
L
DETAIL "A"
A
E
3
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
L1
L1
MILLIMETERS
INCHES
MIN
MAX
2.700
3.100
2.200
3.000
1.200
1.700
0.850
1.150
1.800
2.100
0.300
0.510
0.080
0.200
0.000
0.150
0.887
1.300
0.450 REF.
0.600 REF.
MIN
MAX
0.106
0.122
0.118
0.087
0.047
0.067
0.033
0.045
0.071
0.083
0.020
0.019
0.008
0.003
0.000
0.006
0.035
0.051
0.018 REF.
0.024 REF.
O
O
10
0
0
O
10
O
May,22,2012
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STS3415
Ver 2.0
SOT23 Tape and Reel Data
SOT23-3L Carrier Tape
TR
FEED DIRECTION
UNIT:р
PACKAGE
A0
B0
K0
D0
SOT23-3L
3.15
²0.10
2.77
²0.10
1.22
²0.10
О1.00
+0.05
D1
О1.50
+0.10
E
E1
E2
P0
P1
P2
T
8.00
+0.30
-0.10
1.75
²0.10
3.50
²0.05
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.22
²0.04
SOT23-3L Reel
UNIT:р
TAPE SIZE
8р
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
О178
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
О13.5
!!²0.5
10.5
2.00
²0.5
О10.0
5.00
18.00
May,22,2012
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