STF8204

Green
Product
STF8204
S a mHop Microelectronics C orp.
Ver 2.1
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
9.0 @ VGS=4.5V
Suface Mount Package.
9.5 @ VGS=4.0V
9.5A
20V
ESD Protected.
10.0 @ VGS=3.7V
11.2 @ VGS=3.1V
13.5 @ VGS=2.5V
G2
Bottom Drain Contact (D1/D2)
S2
S2
D1/D2
G1
S1
T D F N 2X 3
S1
G1 3
4 G2
S1 2
5
S2
S1
6
S2
1
(Bottom view)
P IN 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
c
Limit
20
±12
9.5
Units
V
V
A
7.6
A
60
A
TA=25°C
1.56
W
TA=70°C
1.00
W
-55 to 150
°C
80
°C/W
TA=25°C
TA=70°C
a c
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Jul,18,2014
1
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STF8204
Ver 2.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VGS=0V , ID=250uA
VDS=18V , VGS=0V
Min
Typ
Max
20
1
±1
VGS= ±8V , VDS=0V
0.5
Units
V
uA
uA
0.85
1.5
6.3
7.8
9.0
V
m ohm
VGS=4.0V , ID=2.4A
6.5
8.0
9.5
m ohm
VGS=3.7V , ID=2.4A
6.7
8.2
10.0
m ohm
VGS=3.1V , ID=2.4A
7.0
9.0
11.2
m ohm
10.5
13.5
m ohm
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=2.4A
VGS=2.5V , ID=2.4A
VDS=5V , ID=4.75A
8.0
28
S
980
213
189
pF
pF
pF
24
66
ns
ns
116
ns
46
ns
10.7
nC
2.1
nC
5.4
nC
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=10V,VGS=0V
f=1.0MHz
b
VDD=16V
ID=4.75A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
VDS=16V,ID=9.5A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=9.5A
0.84
1.2
V
Notes
_ 1%.
_ 10us, Duty Cycle <
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Jul,18,2014
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STF8204
Ver 2.1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
Mounted on FR-4 board of
1 inch2 , 2oz
2
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
t
imi
)L
R
10
DS
(ON
10us
100us
1
1ms
10ms
100ms
0.1
VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1
DC
1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
Mounted on FR-4 board of
1 inch2 , 2oz
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Jul,18,2014
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STF8204
Ver 2.1
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
60
4.0 V
VGS = 4.5 V
ID - Drain Current - A
ID - Drain Current - A
48
3.7 V
3.1 V
36
2.5 V
24
12
10
TA = -25°C
1
75°C
0.01
0
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
ID = 1.0mA
0.9
0.8
0.7
0.6
0
-50
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
20
VGS = 2.5 V
3.1 V
3.7 V
10
4.5 V
5
0
0.1
1
10
2.5
3
TA = -25°C
10
25°C
75°C
1
125°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
25
4.0 V
2
100
Tch - Channel Temperature - °C
15
1.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.0
1
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
25°C
125°C
0.1
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
ID = 2.4 A
15
10
5
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Jul,18,2014
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STF8204
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
ID = 2.4 A
VGS = 2.5 V
16
Ciss, Coss, Crss - Capacitance - pF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
3.1 V
3.7 V
4.0 V
12
8
4.5 V
4
0
0
-50
50
100
Ciss
1000
Coss
Crss
100
10
0.1
150
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
4
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 2.1
td(off)
100
tr
tf
td(on)
10
VDD = 16 V
VGS = 4.5V
RG = 6 Ω
VDD = 4 V
10 V
16 V
3
2
1
ID = 9.5 A
1
0
1
0.1
10
0
3
6
9
12
15
QG - Gate Charge -nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.3
0.6
0.9
1.2
1.5
1.8
VF(S-D) - Source to Drain Voltage - V
Jul,18,2014
5
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STF8204
Ver 2.1
PACKAGE OUTLINE DIMENSIONS
TDFN
L
E
6
D
TDFN
( 2 x 3 ) - 6L
e
1
H
PIN #1 DOT
BY MARKING
F
C
BOTTOM VIEW
TOP VIEW
PIN #1 ID
CHAMFER 0.300mm
A
B
A1
SYMBOLS
A
A1
D
E
H
L
e
B
C
F
SIDE VIEW
MILLIMETERS
MIN
MAX
0.800
0.700
0.000
0.050
2.950
3.050
1.950
2.050
0.350
0.450
1.550
1.450
1.650
1.750
0.195
0.211
0.200
0.300
0.500 BSC
INCHES
MIN
MAX
0.028
0.031
0.000
0.002
0.120
0.116
0.081
0.077
0.018
0.014
0.061
0.057
0.069
0.065
0.008
0.0076
0.008
0.012
0.020 BSC
Jul,18,2014
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STF8204
Ver 2.1
TDFN 2x3-6L Tape and Reel Data
TDFN 2x3-6L Tape
P1
A
P
P2
D1
E1
B
B
E
T
E2
A
D
9o MAX.
(ALL)
H1
H
K
SECTION A-A
FEEDING DIRECTION
SECTION B-B
UNIT : mm
PACKAGE
D
D1
E
E1
E2
H
H1
K
P
P1
P2
T
TDFN 2x3-6L
ӿ1.00
ʾʳ0.25
- 0.00
ӿ1.50
ʾʳ0.10
- 0.00
8.00
ʾʳ0.30
- 0.10
1.75
²0.10
3.50
²0.05
2.31
²0.10
3.29
²0.10
1.10
²0.10
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.254
²0.02
S mini 8 Reel
W
Z
M
L
N
V
ARBOR HOLE
UNIT : mm
TAPE SIZE
8р
REEL SIZE
M
N
W
V
Z
L
7 INCH
1.5 (min)
1.28 ~ 13.5
8.4 ~ 9.9
54.5 ~ 55.5
14.4 (max)
178.5 ~ 179.5
Jul,18,2014
7
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STF8204
Ver 2.1
PACKAGE OUTLINE DIMENSIONS
TDFN 2x3-6L
Pin 1
8204
Product No.
XXXXXX
SMC Internal Code No.(A,B...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
Jul,18,2014
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