Green Product STF8204 S a mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 9.0 @ VGS=4.5V Suface Mount Package. 9.5 @ VGS=4.0V 9.5A 20V ESD Protected. 10.0 @ VGS=3.7V 11.2 @ VGS=3.1V 13.5 @ VGS=2.5V G2 Bottom Drain Contact (D1/D2) S2 S2 D1/D2 G1 S1 T D F N 2X 3 S1 G1 3 4 G2 S1 2 5 S2 S1 6 S2 1 (Bottom view) P IN 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed c Limit 20 ±12 9.5 Units V V A 7.6 A 60 A TA=25°C 1.56 W TA=70°C 1.00 W -55 to 150 °C 80 °C/W TA=25°C TA=70°C a c PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Jul,18,2014 1 www.samhop.com.tw STF8204 Ver 2.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VGS=0V , ID=250uA VDS=18V , VGS=0V Min Typ Max 20 1 ±1 VGS= ±8V , VDS=0V 0.5 Units V uA uA 0.85 1.5 6.3 7.8 9.0 V m ohm VGS=4.0V , ID=2.4A 6.5 8.0 9.5 m ohm VGS=3.7V , ID=2.4A 6.7 8.2 10.0 m ohm VGS=3.1V , ID=2.4A 7.0 9.0 11.2 m ohm 10.5 13.5 m ohm VDS=VGS , ID=1.0mA VGS=4.5V , ID=2.4A VGS=2.5V , ID=2.4A VDS=5V , ID=4.75A 8.0 28 S 980 213 189 pF pF pF 24 66 ns ns 116 ns 46 ns 10.7 nC 2.1 nC 5.4 nC b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Qg Fall Time Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=10V,VGS=0V f=1.0MHz b VDD=16V ID=4.75A VGS=4.5V RGEN= 6 ohm Total Gate Charge VDS=16V,ID=9.5A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=9.5A 0.84 1.2 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz. Jul,18,2014 2 www.samhop.com.tw STF8204 Ver 2.1 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 3 PT - Total Power Dissipation - W dT - Percentage of rated Power - % 120 100 80 60 40 20 2.5 Mounted on FR-4 board of 1 inch2 , 2oz 2 1.5 1 0.5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA t imi )L R 10 DS (ON 10us 100us 1 1ms 10ms 100ms 0.1 VGS=4.5V Single Pulse TA=25 C 0.01 0.1 DC 1 10 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 100 Mounted on FR-4 board of 1 inch2 , 2oz 100 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Jul,18,2014 3 www.samhop.com.tw STF8204 Ver 2.1 FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 60 4.0 V VGS = 4.5 V ID - Drain Current - A ID - Drain Current - A 48 3.7 V 3.1 V 36 2.5 V 24 12 10 TA = -25°C 1 75°C 0.01 0 0 0.2 0.4 0.6 0.8 0.5 0 1 ЮyfsЮ- Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V ID = 1.0mA 0.9 0.8 0.7 0.6 0 -50 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ 20 VGS = 2.5 V 3.1 V 3.7 V 10 4.5 V 5 0 0.1 1 10 2.5 3 TA = -25°C 10 25°C 75°C 1 125°C 0.1 0.01 0.01 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 4.0 V 2 100 Tch - Channel Temperature - °C 15 1.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.0 1 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 25°C 125°C 0.1 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 ID = 2.4 A 15 10 5 0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V Jul,18,2014 4 www.samhop.com.tw STF8204 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ID = 2.4 A VGS = 2.5 V 16 Ciss, Coss, Crss - Capacitance - pF DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 3.1 V 3.7 V 4.0 V 12 8 4.5 V 4 0 0 -50 50 100 Ciss 1000 Coss Crss 100 10 0.1 150 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS 4 VGS - Gate to Drain Voltage - V td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ Ver 2.1 td(off) 100 tr tf td(on) 10 VDD = 16 V VGS = 4.5V RG = 6 Ω VDD = 4 V 10 V 16 V 3 2 1 ID = 9.5 A 1 0 1 0.1 10 0 3 6 9 12 15 QG - Gate Charge -nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 100 10 1 0.1 VGS = 0 V 0.01 0 0.3 0.6 0.9 1.2 1.5 1.8 VF(S-D) - Source to Drain Voltage - V Jul,18,2014 5 www.samhop.com.tw STF8204 Ver 2.1 PACKAGE OUTLINE DIMENSIONS TDFN L E 6 D TDFN ( 2 x 3 ) - 6L e 1 H PIN #1 DOT BY MARKING F C BOTTOM VIEW TOP VIEW PIN #1 ID CHAMFER 0.300mm A B A1 SYMBOLS A A1 D E H L e B C F SIDE VIEW MILLIMETERS MIN MAX 0.800 0.700 0.000 0.050 2.950 3.050 1.950 2.050 0.350 0.450 1.550 1.450 1.650 1.750 0.195 0.211 0.200 0.300 0.500 BSC INCHES MIN MAX 0.028 0.031 0.000 0.002 0.120 0.116 0.081 0.077 0.018 0.014 0.061 0.057 0.069 0.065 0.008 0.0076 0.008 0.012 0.020 BSC Jul,18,2014 6 www.samhop.com.tw STF8204 Ver 2.1 TDFN 2x3-6L Tape and Reel Data TDFN 2x3-6L Tape P1 A P P2 D1 E1 B B E T E2 A D 9o MAX. (ALL) H1 H K SECTION A-A FEEDING DIRECTION SECTION B-B UNIT : mm PACKAGE D D1 E E1 E2 H H1 K P P1 P2 T TDFN 2x3-6L ӿ1.00 ʾʳ0.25 - 0.00 ӿ1.50 ʾʳ0.10 - 0.00 8.00 ʾʳ0.30 - 0.10 1.75 ²0.10 3.50 ²0.05 2.31 ²0.10 3.29 ²0.10 1.10 ²0.10 4.00 ²0.10 4.00 ²0.10 2.00 ²0.05 0.254 ²0.02 S mini 8 Reel W Z M L N V ARBOR HOLE UNIT : mm TAPE SIZE 8р REEL SIZE M N W V Z L 7 INCH 1.5 (min) 1.28 ~ 13.5 8.4 ~ 9.9 54.5 ~ 55.5 14.4 (max) 178.5 ~ 179.5 Jul,18,2014 7 www.samhop.com.tw STF8204 Ver 2.1 PACKAGE OUTLINE DIMENSIONS TDFN 2x3-6L Pin 1 8204 Product No. XXXXXX SMC Internal Code No.(A,B...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) Jul,18,2014 8 www.samhop.com.tw