SP8601 Green Product S a mHop Microelectronics C orp. Ver 2.5 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 17.5 @ VGS=4.5V 20V 7.2A 18.5 @ VGS=4.0V Suface Mount Package. 20.0 @ VGS=3.7V ESD Protected. 24.5 @ VGS=3.1V 27.0 @ VGS=2.5V D1 D1 D2 D2 S1 G1 S2 G2 S mini 8 P IN 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed c Limit 20 ±12 7.2 Units V V A 5.8 A 43 A TA=25°C 1.47 W TA=70°C 0.94 W -55 to 150 °C 85 °C/W TA=25°C TA=70°C a c PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Jul,18,2014 1 www.samhop.com.tw SP8601 Ver 2.5 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance Conditions Min VGS=0V , ID=250uA VDS=16V , VGS=0V 20 Typ Max 1 ±1 VGS= ±8V , VDS=0V 0.5 Units V uA uA 0.95 1.5 12.0 14.5 17.5 V m ohm VGS=4.0V , ID=1.8A 12.5 15.0 18.5 m ohm VGS=3.7V , ID=1.8A 13.5 16.0 20.0 m ohm VGS=3.1V , ID=1.8A 14.5 18.5 24.5 m ohm 22.0 27.0 m ohm VDS=VGS , ID=1.0mA VGS=4.5V , ID=1.8A VGS=2.5V , ID=1.8A VDS=5V , ID=3.6A 18.0 18 S 320 106 92 pF pF pF 13.5 30 ns ns 19 ns 13.5 ns b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Qg Fall Time Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=10V,VGS=0V f=1.0MHz b VDD=16V ID=3.6A VGS=4.0V RGEN= 6 ohm Total Gate Charge VDS=16V,ID=7.2A, VGS=4.0V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=7.2A 7.2 nC 1.4 nC 4 nC 0.89 1.2 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz. Jul,18,2014 2 www.samhop.com.tw SP8601 Ver 2.5 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 3 PT - Total Power Dissipation - W dT - Percentage of rated Power - % 120 100 80 60 40 20 2.5 Mounted on FR-4 board of 1 inch2 , 2oz 2 1.5 1 0.5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 10 R DS ) Li (ON mit 100us 1ms 1 10ms 100ms 0.1 10s DC VGS=4.5V Single Pulse TA=25 C 0.01 0.1 1 10 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 100 Mounted on FR-4 board of 1 inch2 , 2oz 100 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Jul,18,2014 3 www.samhop.com.tw SP8601 Ver 2.5 FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 20 VGS = 4.5 V 4.0 V ID - Drain Current - A ID - Drain Current - A 16 3.7 V 3.1 V 12 2.5 V 8 4 10 TA = -25°C 1 125°C 0.1 75°C 0.01 0 0 0.2 0.4 0.6 0.8 0.5 0 1 ЮyfsЮ- Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 1.1 ID = 1.0mA 1.0 0.9 0.8 0.7 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ VGS = 2.5 V 3.1 V 4.0 V 3.7 V 20 4.5 V 10 0 0.1 1 10 2.5 3 TA = -25°C 10 25°C 75°C 1 125°C 0.1 0.01 0.01 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 30 2 100 Tch - Channel Temperature - °C 40 1.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0.6 -50 1 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 25°C 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 ID = 1.8 A 30 20 10 0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V Jul,18,2014 4 www.samhop.com.tw SP8601 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 VGS = 2.5 V 3.1 V 3.7 V 4.0 V 4.5 V 40 30 1000 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ Ver 2.5 ID = 1.8 A 20 10 0 0 -50 50 100 Ciss 100 Coss Crss 10 0.1 150 10 100 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C DYNAMIC INPUT CHARACTERISTICS SWITCHING CHARACTERISTICS 4 100 VGS - Gate to Drain Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 tr td(off) td(on) 10 tf VDD = 16 V VGS = 4.0 V RG = 6 Ω 3 VDD = 4 V 10 V 16 V 2 1 ID = 7.2 A 1 0 0.1 1 10 0 2 4 6 8 10 QG - Gate Charge -nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 100 10 1 0.1 VGS = 0 V 0.01 0 0.3 0.6 0.9 1.2 1.5 1.8 VF(S-D) - Source to Drain Voltage - V Jul,18,2014 5 www.samhop.com.tw SP8601 Ver 2.5 PACKAGE OUTLINE DIMENSIONS S mini 8 L1 e b D L E1 E BOTTOM VIEW TOP VIEW 01 A c SIDE VIEW SYMBOLS A A1 b c D E E1 e L L1 01 MIN 0.700 0.000 0.240 0.080 2.800 2.700 2.200 0.200 0.000 0o MILLIMETERS NOM 0.800 0.300 0.152 2.900 2.800 2.300 0.650 BSC 0.375 10o A1 MAX 0.900 0.050 0.350 0.250 3.000 2.900 2.400 0.450 0.100 12o Jul,18,2014 6 www.samhop.com.tw SP8601 Ver 2.5 TOP MARKING DEFINITION S mini 8 SamHop Logo 8601 XXXXXX Product No. Pin 1 SMC internal Code No. Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jul,18,2014 7 www.samhop.com.tw