Green Product STM4886 S a mHop Microelectronics C orp. Ver 3.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 3.5 @ VGS=10V 30V Suface Mount Package. 18A 5.4 @ VGS=4.5V S O-8 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VDGR Parameter Drain-Source Voltage Drain-Gate Voltage (RGS = 20 kΩ) VGS Gate-Source Voltage ID IDM Drain Current-Continuous -Pulsed a Limit 30 30 ±20 Units V V TA=25°C 18 A TA=70°C 14.4 A 72 A 84 mJ 18 A TA=25°C 2.5 W TA=70°C 1.6 W -55 to 150 °C 50 °C/W b d EAS Sigle Pulse Avalanche Energy I AR Avalanche Current PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. V Mar,01,2011 1 www.samhop.com.tw STM4886 Ver 3.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage BVDSX ID=10mA , VGS=0V ID=10mA , VGS=-20V IDSS Zero Gate Voltage Drain Current VDS=24V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=1mA VGS=10V , ID=9A VGS=4.5V , ID=9A VDS=10V , ID=9A Min Typ Max 30 10 1.3 Units V V uA 1 ±100 nA 1.7 3.5 2.5 4.5 V m ohm 5.4 34 7.5 m ohm S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge VDS=10V,VGS=0V f=1.0MHz 2410 578 485 pF pF pF 44 67 ns ns 105 36 ns ns 47 nC 7.6 11.5 nC nC c VDD=15V ID=9A VGS=10V RGEN=4.7 ohm VDS=24V,ID=18A,VGS=10V VDS=24V,ID=18A, VGS=10V SOURCE-DRAIN RATINGS AND CHARACTERISTICS Drain reverse current - Pulse IDRP Diode Forward Voltage VSD VGS=0V,IS=18A 0.86 72 1.2 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=100uH,VDD = 20V. Mar,01,2011 2 www.samhop.com.tw STM4886 Ver 3.0 10 4.5 ID - VDS ID - VDS 50 3.3 3.2 Drain Current ID (A) 3.4 3.5 16 10 3 3.6 4 12 8 4 VGS=2.5V 3.5 4 3.1 Drain Current ID (A) 20 4.5 3.6 3.4 40 3.3 30 3.2 3.1 20 3 10 VGS=2.5V 0 0 0 0.8 0.4 1.2 2.0 1.6 Drain-Source Voltage VDS 0 (V) 0.8 0.4 1.6 1.2 Drain-Source Voltage VDS ID - VGS 2.0 (V) VDS - VGS 0.20 28 Drain-Source Voltage VDS Drain Current ID (A) (V) 35 Tj=100 C 21 -55 C 14 25 C 7 0 0 2 1 4 3 0.16 0.12 ID=18A 0.08 9A 0.04 4.5A 0 0 5 Gate-Source Voltage VGS (V) ЮYfsЮ - ID 8 6 10 RDS(ON) - ID 100 Drain-source ON resistance RDS(ON) (mΩ) VDS=10V Forward transfer admittance !!!!!!ЮYfsЮ (S) 4 Gate-Source Voltage VGS (V) 100 -55 C 25 C 10 Tj=100 C 1 0.1 0.1 2 1 10 10 VGS=10V 1 0.1 0.1 100 Drain Current ID (A) VGS=4.5V 1 10 100 Drain Current ID (A) Mar,01,2011 3 www.samhop.com.tw STM4886 Ver 3.0 RDS(on) Ta IDR Drain reverse current IDR (A) 12 ID=4.5,9,18A 9 VGS=4.5V 6 ID=4.5,9,18A 3 VGS=10V 0 4.5 100 10 10 -40 40 0 160 120 80 0 -0.3 Ambient temperature Ta (°C ) VGS=0V Capacitance -0.6 -0.9 -1.2 -1.5 Drain-source voltage VDS (V) Vth VDS Ta 2.5 Gate threshold voltage Vth (V) 10000 Ciss Coss 1000 Crss 100 1 0.1 1.5 1.0 0.5 0 100 10 VDS=VGS ID=1mA 2.0 -80 -40 80 120 160 Ambient temperature Ta (°C ) Drain-source voltage VDS (V) PD 40 0 Dynamic input/output characteristics Ta 3.0 15 Drain-source voltage VDS (V) 50 2.4 1.8 1.2 0.6 0 ID=18A 40 12 30 9 VDD=24V 6 VDD=24V 6 20 12 12 10 3 6 0 0 0 40 80 120 0 160 Ambient temperature Ta (°C ) Gate-source voltage VGS (V) Capacitance C (pF) 1 3 1 0.1 -80 Drain power dissipation PD (W) VDS 1000 15 RDS(on) (m Ω) Drain-source ON resistance 18 9 18 27 36 45 54 63 72 Total gate charge Qg (nC) Mar,01,2011 4 www.samhop.com.tw STM4886 Ver 3.0 rth - tw Transient thermal impedance rth (°C/W) 1000 100 Mounted on FR-4 board 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area 100 Drain current ID (A) R ) Li (ON mit DS t=1 10 t=1 t=1 DC 1 0.1 0.01 0.1 0m t=1 0us 00u s ms s VGS=10V Single Pulse TA=25 C 1 10 30 Drain-source voltage VDS (V) Mar,01,2011 5 www.samhop.com.tw STM4886 Ver 3.0 PACKAGE OUTLINE DIMENSIONS SO-8 D E A2 A 1 e A1 b H h X 45 O C L SYMBOLS A A1 A2 b C D E e H L h MILLIMETERS MIN MAX INCHES MIN MAX 1.75 1.35 0.25 0.10 1.63 1.25 0.51 0.31 0.17 0.25 4.80 5.00 3.70 4.00 1.27 REF. 5.80 6.20 1.27 0.40 0± 8± 0.25 0.50 0.053 0.069 0.004 0.010 0.064 0.049 0.020 0.012 0.010 0.007 0.197 0.189 0.146 0.157 0.050 BSC 0.228 0.244 0.016 0.050 8± 0± 0.020 0.010 Mar,01,2011 6 www.samhop.com.tw STM4886 Ver 3.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 K0 D0 2.10 ²0.10 ӿ1.5 (MIN) REEL SIZE M N ӿ330 330 ² 1 62 ²1.5 5.25 ²0.10 D1 E ӿ1.55 ²0.10 12.0 +0.3 - 0.1 W W1 12.4 + 0.2 16.8 - 0.4 E2 P0 1.75 ²0.10 5.5 ²0.10 8.0 ²0.10 H K S E1 P2 T 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 G R P1 SO-8 Reel UNIT:р TAPE SIZE 12 р ӿ12.75 + 0.15 V 2.0 ²0.15 Mar,01,2011 7 www.samhop.com.tw