STM4886

Green
Product
STM4886
S a mHop Microelectronics C orp.
Ver 3.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Typ
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
3.5 @ VGS=10V
30V
Suface Mount Package.
18A
5.4 @ VGS=4.5V
S O-8
1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VDGR
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20 kΩ)
VGS
Gate-Source Voltage
ID
IDM
Drain Current-Continuous
-Pulsed
a
Limit
30
30
±20
Units
V
V
TA=25°C
18
A
TA=70°C
14.4
A
72
A
84
mJ
18
A
TA=25°C
2.5
W
TA=70°C
1.6
W
-55 to 150
°C
50
°C/W
b
d
EAS
Sigle Pulse Avalanche Energy
I AR
Avalanche Current
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
V
Mar,01,2011
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STM4886
Ver 3.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
BVDSX
ID=10mA , VGS=0V
ID=10mA , VGS=-20V
IDSS
Zero Gate Voltage Drain Current
VDS=24V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
VDS=VGS , ID=1mA
VGS=10V , ID=9A
VGS=4.5V , ID=9A
VDS=10V , ID=9A
Min
Typ
Max
30
10
1.3
Units
V
V
uA
1
±100
nA
1.7
3.5
2.5
4.5
V
m ohm
5.4
34
7.5
m ohm
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=10V,VGS=0V
f=1.0MHz
2410
578
485
pF
pF
pF
44
67
ns
ns
105
36
ns
ns
47
nC
7.6
11.5
nC
nC
c
VDD=15V
ID=9A
VGS=10V
RGEN=4.7 ohm
VDS=24V,ID=18A,VGS=10V
VDS=24V,ID=18A,
VGS=10V
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
Drain reverse current - Pulse
IDRP
Diode Forward Voltage
VSD
VGS=0V,IS=18A
0.86
72
1.2
A
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=100uH,VDD = 20V.
Mar,01,2011
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STM4886
Ver 3.0
10 4.5
ID - VDS
ID - VDS
50
3.3 3.2
Drain Current ID (A)
3.4
3.5
16
10
3
3.6
4
12
8
4
VGS=2.5V
3.5
4
3.1
Drain Current ID (A)
20
4.5
3.6
3.4
40
3.3
30
3.2
3.1
20
3
10
VGS=2.5V
0
0
0
0.8
0.4
1.2
2.0
1.6
Drain-Source Voltage VDS
0
(V)
0.8
0.4
1.6
1.2
Drain-Source Voltage VDS
ID - VGS
2.0
(V)
VDS - VGS
0.20
28
Drain-Source Voltage VDS
Drain Current ID (A)
(V)
35
Tj=100 C
21
-55 C
14
25 C
7
0
0
2
1
4
3
0.16
0.12
ID=18A
0.08
9A
0.04
4.5A
0
0
5
Gate-Source Voltage VGS (V)
ЮYfsЮ - ID
8
6
10
RDS(ON) - ID
100
Drain-source ON resistance
RDS(ON) (mΩ)
VDS=10V
Forward transfer admittance
!!!!!!ЮYfsЮ (S)
4
Gate-Source Voltage VGS (V)
100
-55 C
25 C
10
Tj=100 C
1
0.1
0.1
2
1
10
10
VGS=10V
1
0.1
0.1
100
Drain Current ID (A)
VGS=4.5V
1
10
100
Drain Current ID (A)
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STM4886
Ver 3.0
RDS(on)
Ta
IDR
Drain reverse current IDR (A)
12
ID=4.5,9,18A
9
VGS=4.5V
6
ID=4.5,9,18A
3
VGS=10V
0
4.5
100
10
10
-40
40
0
160
120
80
0
-0.3
Ambient temperature Ta (°C )
VGS=0V
Capacitance
-0.6
-0.9
-1.2
-1.5
Drain-source voltage VDS (V)
Vth
VDS
Ta
2.5
Gate threshold voltage Vth (V)
10000
Ciss
Coss
1000
Crss
100
1
0.1
1.5
1.0
0.5
0
100
10
VDS=VGS
ID=1mA
2.0
-80
-40
80
120
160
Ambient temperature Ta (°C )
Drain-source voltage VDS (V)
PD
40
0
Dynamic input/output characteristics
Ta
3.0
15
Drain-source voltage VDS (V)
50
2.4
1.8
1.2
0.6
0
ID=18A
40
12
30
9
VDD=24V
6
VDD=24V
6
20
12
12
10
3
6
0
0
0
40
80
120
0
160
Ambient temperature Ta (°C )
Gate-source voltage VGS (V)
Capacitance C (pF)
1
3
1
0.1
-80
Drain power dissipation PD (W)
VDS
1000
15
RDS(on) (m Ω)
Drain-source ON resistance
18
9
18
27
36
45
54
63
72
Total gate charge Qg (nC)
Mar,01,2011
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STM4886
Ver 3.0
rth - tw
Transient thermal impedance
rth (°C/W)
1000
100
Mounted on FR-4 board
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (S)
Safe operating area
100
Drain current ID (A)
R
) Li
(ON
mit
DS
t=1
10
t=1
t=1
DC
1
0.1
0.01
0.1
0m
t=1
0us
00u
s
ms
s
VGS=10V
Single Pulse
TA=25 C
1
10
30
Drain-source voltage VDS (V)
Mar,01,2011
5
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STM4886
Ver 3.0
PACKAGE OUTLINE DIMENSIONS
SO-8
D
E
A2 A
1
e
A1
b
H
h X 45
O
C
L
SYMBOLS
A
A1
A2
b
C
D
E
e
H
L
h
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
1.75
1.35
0.25
0.10
1.63
1.25
0.51
0.31
0.17
0.25
4.80
5.00
3.70
4.00
1.27 REF.
5.80
6.20
1.27
0.40
0±
8±
0.25
0.50
0.053
0.069
0.004
0.010
0.064
0.049
0.020
0.012
0.010
0.007
0.197
0.189
0.146
0.157
0.050 BSC
0.228
0.244
0.016
0.050
8±
0±
0.020
0.010
Mar,01,2011
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STM4886
Ver 3.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1
D1
P2
B0
E
E2
E1
A
A0
A
P0
D0
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:р
PACKAGE
A0
SOP 8N
150п
6.50
²0.15
B0
K0
D0
2.10
²0.10
ӿ1.5
(MIN)
REEL SIZE
M
N
ӿ330
330
² 1
62
²1.5
5.25
²0.10
D1
E
ӿ1.55
²0.10
12.0
+0.3
- 0.1
W
W1
12.4
+ 0.2
16.8
- 0.4
E2
P0
1.75
²0.10
5.5
²0.10
8.0
²0.10
H
K
S
E1
P2
T
4.0
²0.10
2.0
²0.10
0.30
²0.013
G
R
P1
SO-8 Reel
UNIT:р
TAPE SIZE
12 р
ӿ12.75
+ 0.15
V
2.0
²0.15
Mar,01,2011
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