STM4639T

Green
Product
STM4639T
S a mHop Microelectronics C orp.
Ver 1.1
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
-30V
-10A
R DS(ON) (m Ω) Max
Rugged and reliable.
12.5 @ VGS=-10V
Suface Mount Package.
16.5 @ VGS=-4.5V
ESD Protected.
S O-8
1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
ID
Drain Current-Continuous
IDM
E AS
Gate-Source Voltage
-Pulsed
TA=25°C
TA=70°C
a
b
Single Pulse Avalanche Energy
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
Limit
-30
±24
-10
-8
Units
V
V
A
-56
A
A
156
mJ
TA=25°C
2.5
W
TA=70°C
1.6
W
-55 to 150
°C
50
°C/W
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Dec,24,2013
1
www.samhop.com.tw
STM4639T
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Conditions
Min
VGS=0V , ID=-10mA
-30
-1
±10
VGS= ±24V , VDS=0V
VGS=-10V , ID=-5A
VGS=-4.5V , ID=-5A
Max
-1.0
Units
V
VDS=-24V , VGS=0V
VDS=VGS , ID=-0.5mA
Drain-Source On-State Resistance
Typ
-1.7
-3.0
10
13
12.5
16.5
uA
uA
V
m ohm
m ohm
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
768
352
pF
pF
pF
46
60
210
57
ns
ns
ns
ns
VDS=-24V,ID=-10A,VGS=-10V
62
nC
VDS=-24V,ID=-10A,
VGS=-10V
7.6
16
nC
nC
VDS=-10V,VGS=0V
f=1.0MHz
3375
c
VDD=-15V
ID=-5A
VGS=-10V
RGEN= 4.7 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=-10A
-1.2
-1.8
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
Dec,24,2013
2
www.samhop.com.tw
STM4639T
Ver 1.1
ID - VDS
ID - VDS
20
50
-10
-10
16
-3.1
-3.2
-3.5
-4.0
-3.0
12
-2.9
8
-2.8
-2.7
4
-3.7
40
-4.0
-3.3
30
-3.2
20
-3.0
-3.1
-2.9
-2.8
10
V GS =-2.7V
0
0
0.8
0.6
0.4
0.2
Drain-Source Voltage -VDS
1.0
0
(V)
ID - VGS
(V)
Drain-Source Voltage -VDS
9
Tj=100 C
-55 C
3
25 C
0
0
1.6
0.8
(V)
3.2
2.4
0.5
0.4
0.3
0.2
ID=10A
0.1
2.5A
5A
0
0
4.0
Gate-Source Voltage -VGS (V)
6
4
2
8
10
Gate-Source Voltage -VGS (V)
RDS(ON) - ID
RDS(ON) - Ta
100
10
VGS=-10V
25
RDS(on) (m Ω)
Drain-source ON resistance
30
VGS=-4.5V
1
0.1
2.0
VDS - VGS
12
6
1.6
1.2
0.8
0.4
Drain-Source Voltage -VDS
15
Drain Current -ID (A)
-3.5
-3.4
V GS =-2.6V
0
Drain-source on-resistance
RDS(ON) (mΩ)
-3.6
-4.5
Drain Current -ID (A)
Drain Current -ID (A)
-4.5
20
ID = -2.5,-5,-10A
15
VGS=-4.5V
10
ID = -2.5,-5,-10A
VGS=-10V
5
0
1
10
-80
100
Drain Current -ID (A)
-40
0
40
80
120
160
Ambient temperature Ta (°C )
Dec,24,2013
3
www.samhop.com.tw
STM4639T
Ver 1.1
IDR
Capacitance
VDS
-4.5
-10
-3
VGS=0V
-1
1
0
0.4
0.8
1.2
1.6
Ciss
Coss
1000
Crss
100
2.0
Drain-source voltage -VDS (V)
Gate threshold voltage -Vth (V)
Dynamic input/output characteristics
Ta
2.5
2.0
1.5
1.0
0.5
VDS=VGS
ID=-0.5mA
-40
40
0
80
120
160
Ambient temperature Ta (°C )
PD
50
15
ID=-10A
12
40
30
VDD=-24V
9
-6
-12
20
6
VDD=-24V
-12
10
0
0
-80
100
10
Drain-source voltage -VDS (V)
Drain-source voltage -VDS (V)
Vth
1
0.1
3
-6
0
8
16
24
32
40
48
56
64
Gate-source voltage -VGS (V)
10
0.1
Drain power dissipation PD (W)
VDS
10000
Capacitance C (pF)
Drain reverse current -IDR (A)
100
0
Total gate charge Qg (nC)
Ta
3.0
2.4
1.8
1.2
0.6
0
0
40
80
120
160
Ambient temperature Ta (°C )
Dec,24,2013
4
www.samhop.com.tw
STM4639T
Ver 1.1
rth - tw
Transient thermal impedance
rth (°C/W)
1000
100
Mounted on FR-4 board
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (S)
Safe operating area
Drain current -ID (A)
100
R
10
(O
DS
N)
L im
it
t=1
t=1
t=1
t=1
s
00
t=1
0m
00
us
ms
s
ms
DC
1
VGS=-10V
Single Pulse
TA=25 C
0.1
0.03
0.1
1
10
30
Drain-source voltage -VDS (V)
Dec,24,2013
5
www.samhop.com.tw
STM4639T
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
SO-8
D
E
A2 A
1
e
A1
b
H
h X 45
O
C
L
SYMBOLS
A
A1
A2
b
C
D
E
e
H
L
h
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
1.75
1.35
0.25
0.10
1.63
1.25
0.51
0.31
0.17
0.25
4.80
5.00
3.70
4.00
1.27 REF.
5.80
6.20
1.27
0.40
0±
8±
0.25
0.50
0.053
0.069
0.010
0.004
0.064
0.049
0.020
0.012
0.010
0.007
0.197
0.189
0.146
0.157
0.050 BSC
0.228
0.244
0.016
0.050
8±
0±
0.020
0.010
Dec,24,2013
6
www.samhop.com.tw
STM4639T
Ver 1.1
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1
D1
P2
B0
E
E2
E1
A
A0
A
P0
D0
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:р
PACKAGE
A0
SOP 8N
150п
6.50
²0.15
B0
K0
D0
2.10
²0.10
ӿ1.5
(MIN)
REEL SIZE
M
N
ӿ330
330
² 1
62
²1.5
5.25
²0.10
D1
E
ӿ1.55
²0.10
12.0
+0.3
- 0.1
W
W1
12.4
+ 0.2
16.8
- 0.4
E2
P0
1.75
²0.10
5.5
²0.10
8.0
²0.10
H
K
S
E1
P2
T
4.0
²0.10
2.0
²0.10
0.30
²0.013
G
R
P1
SO-8 Reel
UNIT:р
TAPE SIZE
12 р
ӿ12.75
+ 0.15
V
2.0
²0.15
Dec,24,2013
7
www.samhop.com.tw
STM4639T
Ver 1.1
TOP MARKING DEFINITION
SO-8
Product No.
STM4639
SamHop Logo
XXXXXT
PIN 1
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B.....)
Wafer Lot No.
SMC internal code No. (A,B,C...Z)
Dec,24,2013
8
www.samhop.com.tw