SP8076E

Green
Product
SP8076E
S a mHop Microelectronics C orp.
Ver 1.3
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Typ
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
3.8 @ VGS=10V
33V
Suface Mount Package.
27A
4.9 @ VGS=6V
ESD Protected.
P in 1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
TSON 3.3 x 3.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
IDM
Drain Current-Continuous
-Pulsed
TA=25°C
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Limit
Units
33
V
±20
27
V
A
81
A
1.67
W
-55 to 150
°C
75
°C/W
Oct,22,2013
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SP8076E
Ver 1.3
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
VGS=0V , ID=10mA
33
VGS=-20V , ID=10mA
18
V
BVDSS
BVDSX
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=33V , VGS=0V
10
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
±10
uA
1.8
2.3
V
VGS=10V , ID=13.5A
3.8
4.6
m ohm
VGS=6V , ID=13.5A
4.9
6.2
m ohm
VDS=10V,VGS=0V
f=1.0MHz
2000
600
550
pF
pF
pF
VDD=15V
ID=13.5A
VGS=10V
RGEN= 4.7 ohm
42
ns
ns
73
56
ns
VDS=24V,ID=13.5A,VGS=10V
41
nC
10.8
nC
10.2
nC
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
VDS=VGS , ID=0.3mA
Drain-Source On-State Resistance
1.3
V
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
b
VDS=24V,ID=13.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=27A
76
0.84
ns
1.3
V
Notes
_ 2%.
_ 300us, Duty Cycle <
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
Oct,22,2013
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SP8076E
Ver 1.3
ID - VDS
Drain Current ID (A)
3.6
10
3.3
12
3.2
8
3.1
4
2.9
3
V GS =2.7V
0
0
0.8
0.6
0.4
0.2
4.2
4.5
5.0
3.4
3.5
4.0
16
ID - VDS
50
4.5
10
Drain Current ID (A)
20
Drain-Source Voltage VDS
40
3.7
30
3.6
3.5
20
3.4
3.3
10
3.1
3.0
V GS =2.8V
0
0
(V)
1.6
1.2
0.8
0.4
Drain-Source Voltage VDS
ID - VGS
2.0
(V)
VDS - VGS
0.5
(V)
24
18
Drain-Source Voltage VDS
Drain Current ID (A)
3.9
3.8
1.0
30
Tj=100 C
12
-55 C
6
25 C
0
0
2
1
4
3
0.4
0.3
0.2
ID=27A
0.1
13.5A
6.8A
0
0
5
Gate-Source Voltage VGS (V)
RDS(ON) - ID
8
10
RDS(ON) - Ta
VGS=6V
VGS=10V
10
RDS(on) (m Ω)
Drain-source ON resistance
12
10
1
0.1
6
4
2
Gate-Source Voltage VGS (V)
100
Drain-source on-resistance
RDS(ON) (mΩ)
4.0
8
ID = 6.8, 13.5, 27A
6
VGS=6V
4
ID = 6.8, 13.5, 27A
2
VGS=10V
0
1
10
-80
100
Drain Current ID (A)
-40
0
40
80
120
160
Ambient temperature Ta (°C )
Oct,22,2013
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SP8076E
Ver 1.3
IDR
Capacitance
VDS
4.5
6
10
1
1
0
-0.2
-0.4
VGS=0V
-0.6
-0.8
Ciss
Coss
1000
Crss
100
0.1
-1.0
1
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Dynamic input/output characteristics
Ta
50
2.5
Drain-source voltage VDS (V)
Gate threshold voltage Vth (V)
Vth
2.0
1.5
1.0
0.5
VDS=VGS
ID=0.3mA
-40
40
0
80
120
160
Ambient temperature Ta (°C )
PD
15
ID=27A
12
40
30
12
VDD=24V
9
6
20
6
VDD=24V
12
10
0
0
-80
Drain power dissipation PD (W)
100
10
3
6
0
6
12
18
24
30
36
42
48
Gate-source voltage VGS (V)
10
0.1
VDS
10000
Capacitance C (pF)
Drain reverse current IDR (A)
100
0
Total gate charge Qg (nC)
Ta
2.5
2.0
1.5
1.0
0.5
0
0
40
80
120
160
Ambient temperature Ta (°C )
Oct,22,2013
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SP8076E
Ver 1.3
rth - tw
Transient thermal impedance
rth (°C/W)
1000
Mounted on FR-4 board
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (S)
Safe operating area
Drain current ID (A)
100
R
(O
DS
N)
Lim
it
t=1
t=1
10
t=1
t=1
1
0.1
0.1
0m
00
us
ms
s
s
DC
VGS=10V
Single Pulse
TA=25 C
1
10
Drain-source voltage VDS (V)
Oct,22,2013
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SP8076E
Ver 1.3
PACKAGE OUTLINE DIMENSIONS
TSON 3.3 x 3.3
A
E2
C
H
D2
M
D
D1
D3
L1
L
PIN 1
b
e
0
E1
E
SYMBOLS
A
b
C
D
D1
D2
D3
E
E1
E2
e
H
L
L1
M
MIN.
0.70
0.25
0.10
3.25
3.00
1.78
3.20
3.00
2.39
0.30
0.30
MILLIMETERS
NOM.
0.75
0.30
0.15
3.35
3.10
1.88
0.13
3.30
3.15
2.49
0.65 BSC
0.39
0.40
0.13
0
10
o
MAX.
0.80
0.35
0.25
3.45
3.20
1.98
3.40
3.20
2.59
0.50
0.50
0.15
12o
Oct,22,2013
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SP8076E
Ver 1.3
TSON 3.3 x 3.3 Tape and Reel Data
TSON 3.3 x 3.3 Tape
P2
P1
D1
B
E1
E2
E
A
A
T
B
D
P
H1
H
K
SECTION A-A
SECTION B-B
FEEDING DIRECTION
unit:mm
PACKAGE
TSON 3.3 x 3.3
D
D1
E
E1
E2
H
H1
K
P
P1
P2
T
ӿ1.50
(MIN)
ӿ1.50
+0.10
- 0.00
12.0
+0.30
- 0.10
1.75
²0.10
5.50
²0.05
3.70
²0.10
3.70
²0.10
1.10
²0.10
8.0
²0.10
4.0
²0.10
2.0
²0.05
0.3
²0.05
TSON 3.3 x 3.3 Reel
W1
B
N
A
C
D
W2
UNIT:р
TAPE SIZE
12 р
REEL SIZE
13 "
A
B
C
330 ²!1.0
+ 0.5
1.5 - 0.2
+ 0.5
ӿ13.0 - 0.2
D
N
W1
W2
20.2(ref.)
+ 0.0
178 - 2.0
+ 2.0
12.4
- 0.0
18.4(ref.)
Oct,22,2013
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SP8076E
Ver 1.3
TOP MARKING DEFINITION
TSON 3.3 x 3.3
8076E
XXXXXX
Product No.
Pin 1
SMC internal Code No.
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Oct,22,2013
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