Green Product SP8076E S a mHop Microelectronics C orp. Ver 1.3 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 3.8 @ VGS=10V 33V Suface Mount Package. 27A 4.9 @ VGS=6V ESD Protected. P in 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM Drain Current-Continuous -Pulsed TA=25°C a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Limit Units 33 V ±20 27 V A 81 A 1.67 W -55 to 150 °C 75 °C/W Oct,22,2013 1 www.samhop.com.tw SP8076E Ver 1.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS VGS=0V , ID=10mA 33 VGS=-20V , ID=10mA 18 V BVDSS BVDSX Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=33V , VGS=0V 10 uA IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ±10 uA 1.8 2.3 V VGS=10V , ID=13.5A 3.8 4.6 m ohm VGS=6V , ID=13.5A 4.9 6.2 m ohm VDS=10V,VGS=0V f=1.0MHz 2000 600 550 pF pF pF VDD=15V ID=13.5A VGS=10V RGEN= 4.7 ohm 42 ns ns 73 56 ns VDS=24V,ID=13.5A,VGS=10V 41 nC 10.8 nC 10.2 nC ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) VDS=VGS , ID=0.3mA Drain-Source On-State Resistance 1.3 V b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Qg Fall Time Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge b VDS=24V,ID=13.5A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=27A 76 0.84 ns 1.3 V Notes _ 2%. _ 300us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. Oct,22,2013 2 www.samhop.com.tw SP8076E Ver 1.3 ID - VDS Drain Current ID (A) 3.6 10 3.3 12 3.2 8 3.1 4 2.9 3 V GS =2.7V 0 0 0.8 0.6 0.4 0.2 4.2 4.5 5.0 3.4 3.5 4.0 16 ID - VDS 50 4.5 10 Drain Current ID (A) 20 Drain-Source Voltage VDS 40 3.7 30 3.6 3.5 20 3.4 3.3 10 3.1 3.0 V GS =2.8V 0 0 (V) 1.6 1.2 0.8 0.4 Drain-Source Voltage VDS ID - VGS 2.0 (V) VDS - VGS 0.5 (V) 24 18 Drain-Source Voltage VDS Drain Current ID (A) 3.9 3.8 1.0 30 Tj=100 C 12 -55 C 6 25 C 0 0 2 1 4 3 0.4 0.3 0.2 ID=27A 0.1 13.5A 6.8A 0 0 5 Gate-Source Voltage VGS (V) RDS(ON) - ID 8 10 RDS(ON) - Ta VGS=6V VGS=10V 10 RDS(on) (m Ω) Drain-source ON resistance 12 10 1 0.1 6 4 2 Gate-Source Voltage VGS (V) 100 Drain-source on-resistance RDS(ON) (mΩ) 4.0 8 ID = 6.8, 13.5, 27A 6 VGS=6V 4 ID = 6.8, 13.5, 27A 2 VGS=10V 0 1 10 -80 100 Drain Current ID (A) -40 0 40 80 120 160 Ambient temperature Ta (°C ) Oct,22,2013 3 www.samhop.com.tw SP8076E Ver 1.3 IDR Capacitance VDS 4.5 6 10 1 1 0 -0.2 -0.4 VGS=0V -0.6 -0.8 Ciss Coss 1000 Crss 100 0.1 -1.0 1 Drain-source voltage VDS (V) Drain-source voltage VDS (V) Dynamic input/output characteristics Ta 50 2.5 Drain-source voltage VDS (V) Gate threshold voltage Vth (V) Vth 2.0 1.5 1.0 0.5 VDS=VGS ID=0.3mA -40 40 0 80 120 160 Ambient temperature Ta (°C ) PD 15 ID=27A 12 40 30 12 VDD=24V 9 6 20 6 VDD=24V 12 10 0 0 -80 Drain power dissipation PD (W) 100 10 3 6 0 6 12 18 24 30 36 42 48 Gate-source voltage VGS (V) 10 0.1 VDS 10000 Capacitance C (pF) Drain reverse current IDR (A) 100 0 Total gate charge Qg (nC) Ta 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 Ambient temperature Ta (°C ) Oct,22,2013 4 www.samhop.com.tw SP8076E Ver 1.3 rth - tw Transient thermal impedance rth (°C/W) 1000 Mounted on FR-4 board 100 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area Drain current ID (A) 100 R (O DS N) Lim it t=1 t=1 10 t=1 t=1 1 0.1 0.1 0m 00 us ms s s DC VGS=10V Single Pulse TA=25 C 1 10 Drain-source voltage VDS (V) Oct,22,2013 5 www.samhop.com.tw SP8076E Ver 1.3 PACKAGE OUTLINE DIMENSIONS TSON 3.3 x 3.3 A E2 C H D2 M D D1 D3 L1 L PIN 1 b e 0 E1 E SYMBOLS A b C D D1 D2 D3 E E1 E2 e H L L1 M MIN. 0.70 0.25 0.10 3.25 3.00 1.78 3.20 3.00 2.39 0.30 0.30 MILLIMETERS NOM. 0.75 0.30 0.15 3.35 3.10 1.88 0.13 3.30 3.15 2.49 0.65 BSC 0.39 0.40 0.13 0 10 o MAX. 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 2.59 0.50 0.50 0.15 12o Oct,22,2013 6 www.samhop.com.tw SP8076E Ver 1.3 TSON 3.3 x 3.3 Tape and Reel Data TSON 3.3 x 3.3 Tape P2 P1 D1 B E1 E2 E A A T B D P H1 H K SECTION A-A SECTION B-B FEEDING DIRECTION unit:mm PACKAGE TSON 3.3 x 3.3 D D1 E E1 E2 H H1 K P P1 P2 T ӿ1.50 (MIN) ӿ1.50 +0.10 - 0.00 12.0 +0.30 - 0.10 1.75 ²0.10 5.50 ²0.05 3.70 ²0.10 3.70 ²0.10 1.10 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.05 0.3 ²0.05 TSON 3.3 x 3.3 Reel W1 B N A C D W2 UNIT:р TAPE SIZE 12 р REEL SIZE 13 " A B C 330 ²!1.0 + 0.5 1.5 - 0.2 + 0.5 ӿ13.0 - 0.2 D N W1 W2 20.2(ref.) + 0.0 178 - 2.0 + 2.0 12.4 - 0.0 18.4(ref.) Oct,22,2013 7 www.samhop.com.tw SP8076E Ver 1.3 TOP MARKING DEFINITION TSON 3.3 x 3.3 8076E XXXXXX Product No. Pin 1 SMC internal Code No. Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Oct,22,2013 8 www.samhop.com.tw