SP8076EL

Green
Product
SP8076EL
S a mHop Microelectronics C orp.
Ver 1.4
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Typ
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
4.0 @ VGS=10V
33V
27A
Suface Mount Package.
4.5 @ VGS=6V
ESD Protected.
5.5 @ VGS=4.5V
P in 1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
TSON 3.3 x 3.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
IDM
Drain Current-Continuous
-Pulsed
c
TA=25°C
ac
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Limit
Units
33
V
±20
27
V
A
81
A
1.67
W
-55 to 150
°C
75
°C/W
Sep,24,2014
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SP8076EL
Ver 1.4
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
VGS=0V , ID=10mA
33
VGS=-20V , ID=10mA
18
V
BVDSS
BVDSX
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=33V , VGS=0V
10
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
±10
uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
VDS=VGS , ID=0.3mA
Drain-Source On-State Resistance
1.0
V
1.5
2.0
V
VGS=10V , ID=13.5A
4.0
4.8
m ohm
VGS=6V , ID=13.5A
VGS=4.5V , ID=13.5A
4.5
5.6
m ohm
5.5
6.9
m ohm
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
1660
498
456
pF
pF
pF
VDD=15V
ID=13.5A
VGS=10V
RGEN= 4.7 ohm
35
ns
ns
61
46
ns
VDS=24V,ID=13.5A,VGS=10V
34
nC
6
nC
9.5
nC
VDS=10V,VGS=0V
f=1.0MHz
b
VDS=24V,ID=13.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=27A
63
0.84
ns
1.3
V
Notes
_ 1%.
_ 10us, Duty Cycle <
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Sep,24,2014
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SP8076EL
Ver 1.4
ID - VDS
ID - VDS
20
50
3.6
3.5
4.5
3.4
4.0
3.9
3.8
10
16
3.3
12
3.2
Drain Current ID (A)
Drain Current ID (A)
10 4.0
3.1
8
3
2.9
4
40
3.7
3.6
30
3.5
3.4
20
3.3
3.2
10
3.0
2.9
V GS =2.7V
V GS =2.7V
0
0
0
0.8
0.6
0.4
0.2
Drain-Source Voltage VDS
1.0
0
(V)
Drain-Source Voltage VDS
ID - VGS
(V)
VDS - VGS
(V)
40
30
Drain-Source Voltage VDS
Drain Current ID (A)
2.0
0.5
50
Tj=100 C
20
-55 C
10
25 C
0
0
2
1
4
3
0.4
0.3
0.2
ID=27A
0.1
13.5A
6.8A
0
0
5
Gate-Source Voltage VGS (V)
RDS(ON) - ID
8
10
RDS(ON) - Ta
VGS=6V
VGS=10V
1
10
10
RDS(on) (m Ω)
Drain-source ON resistance
12
10
1
0.1
6
4
2
Gate-Source Voltage VGS (V)
100
Drain-source on-resistance
RDS(ON) (mΩ)
1.6
1.2
0.8
0.4
8
ID = 6.8, 13.5, 27A
6
4
VGS=6V
2
VGS=10V
0
-80
100
Drain Current ID (A)
-40
ID = 6.8, 13.5, 27A
0
40
80
120
160
Ambient temperature Ta (°C )
Sep,24,2014
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SP8076EL
Ver 1.4
IDR
Capacitance
VDS
4.5
Capacitance C (pF)
6
10
1
VGS=0V
1
0
-0.2
-0.4
-0.6
-0.8
Ciss
Coss
1000
Crss
100
0.1
-1.0
1
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Dynamic input/output characteristics
Ta
2.0
1.5
1.0
0.5
VDS=VGS
ID=0.3mA
-40
40
0
80
120
160
Ambient temperature Ta (°C )
PD
ID=13.5A
12
40
30
12
VDD=24V
9
6
20
6
VDD=24V
12
10
0
0
-80
Drain power dissipation PD (W)
15
50
2.5
Drain-source voltage VDS (V)
Gate threshold voltage Vth (V)
Vth
100
10
3
6
0
5
10
15
20
25
30
35
40
Gate-source voltage VGS (V)
Drain reverse current IDR (A)
10
0.1
VDS
10000
100
0
Total gate charge Qg (nC)
Ta
2.5
2.0
1.5
1.0
0.5
0
0
40
80
120
160
Ambient temperature Ta (°C )
Sep,24,2014
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SP8076EL
Ver 1.4
rth - tw
Transient thermal impedance
rth (°C/W)
1000
100
Mounted on FR-4 board
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (S)
Safe operating area
Drain current ID (A)
100
R
(O
DS
N)
Lim
it
t=1
t=1
10
t=1
t=1
1
0.1
0.1
0m
00u
s
ms
s
s
DC
VGS=10V
Single Pulse
TA=25 C
1
10
Drain-source voltage VDS (V)
Sep,24,2014
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SP8076EL
Ver 1.4
PACKAGE OUTLINE DIMENSIONS
TSON 3.3 x 3.3
A
E2
C
H
D2
M
D
D1
D3
L1
L
PIN 1
b
e
0
E1
E
SYMBOLS
A
b
C
D
D1
D2
D3
E
E1
E2
e
H
L
L1
M
MIN.
0.70
0.25
0.10
3.25
3.00
1.78
3.20
3.00
2.39
0.30
0.30
MILLIMETERS
NOM.
0.75
0.30
0.15
3.35
3.10
1.88
0.13
3.30
3.15
2.49
0.65 BSC
0.39
0.40
0.13
10o
0
MAX.
0.80
0.35
0.25
3.45
3.20
1.98
3.40
3.20
2.59
0.50
0.50
0.15
12o
Sep,24,2014
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SP8076EL
Ver 1.4
TSON 3.3 x 3.3 Tape and Reel Data
TSON 3.3 x 3.3 Tape
P2
P1
D1
B
E1
E2
E
A
A
T
B
D
P
H1
H
K
SECTION A-A
SECTION B-B
FEEDING DIRECTION
unit:р
PACKAGE
S mini 8
D
D1
E
E1
E2
H
H1
K
P
P1
P2
T
ӿ1.50
(MIN)
ӿ1.50
+0.10
- 0.00
12.0
+0.30
- 0.10
1.75
²0.10
5.50
²0.05
3.70
²0.10
3.70
²0.10
1.10
²0.10
8.0
²0.10
4.0
²0.10
2.0
²0.05
0.3
²0.05
TSON 3.3 x 3.3 Reel
W1
B
N
A
C
D
W2
UNIT:р
TAPE SIZE
12 р
REEL SIZE
13 "
A
B
C
330 ²!1.0
+ 0.5
1.5 - 0.2
+ 0.5
ӿ13.0 - 0.2
D
20.2(ref.)
N
W1
W2
+ 0.0
178 - 2.0
+ 2.0
12.4
- 0.0
18.4(ref.)
Sep,24,2014
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SP8076EL
Ver 1.4
TOP MARKING DEFINITION
TSON 3.3 x 3.3
8076EL
XXXXXX
Product No.
Pin 1
SMC internal Code No.
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Sep,24,2014
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