STF8233

Green
Product
STF8233
S a mHop Microelectronics C orp.
Ver 2.1
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
7.2 @ VGS=4.5V
11A
20V
7.5 @ VGS=4.0V
Suface Mount Package.
8.2 @ VGS=3.7V
ESD Protected.
9.0 @ VGS=3.1V
10.2 @ VGS=2.5V
G2
Bottom Drain Contact (D1/D2)
S2
S2
G1 3
4 G2
S1 2
5
S2
S1
6
S2
D1/D2
G1
S1
T DF N 2X3
S1
1
(Bottom view)
P IN 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
11
Units
V
V
A
8.8
A
70
A
TA=25°C
1.56
W
TA=70°C
1.00
W
-55 to 150
°C
80
°C/W
Limit
20
±12
TA=25°C
TA=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Oct,22,2013
1
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STF8233
Ver 2.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
20
Typ
Max
1
±10
VDS=18V , VGS=0V
VGS= ±12V , VDS=0V
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=5.5A
0.5
VGS=4.0V , ID=5.5A
Units
V
uA
uA
0.85
1.5
4.5
6.0
7.2
V
m ohm
4.8
6.2
7.5
m ohm
VGS=3.7V , ID=5.5A
5.0
6.5
8.2
m ohm
VGS=3.1V , ID=5.5A
5.3
7.0
9.0
m ohm
VGS=2.5V , ID=5.5A
VDS=5V , ID=5.5A
6.0
8.2
10.2
m ohm
38
S
1310
264
235
pF
pF
pF
31
87
ns
69
ns
37
ns
15
nC
3
nC
7
nC
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=10V,VGS=0V
f=1.0MHz
c
VDD=16V
ID=5.5A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
VDS=16V,ID=11A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=11A
0.87
ns
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 1%.
_ 10us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Oct,22,2013
2
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STF8233
Ver 2.1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
Mounted on FR-4 board of
1 inch2 , 2oz
2
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
it
Lim
N)
O
(
RDS
10us
10
100us
1
1ms
10ms
100ms
0.1
VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1
DC
1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
Mounted on FR-4 board of
1 inch2 , 2oz
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Oct,22,2013
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STF8233
Ver 2.1
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
60
VGS = 4.5 V
4.0 V
3.7 V
40
ID - Drain Current - A
ID - Drain Current - A
50
3.1 V
2.5 V
30
20
10
125°C
25°C
0.1
75°C
10
0
0.01
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
ID = 1.0mA
0.9
0.8
0.7
0.6
-50
0
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
20
VGS = 2.5 V
3.1 V
4.0 V
3.7 V
5
4.5 V
0
0.1
1
10
2.5
3
TA = -25°C
10
25°C
75°C
125°C
1
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
25
10
2
100
Tch - Channel Temperature - °C
15
1.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.0
1
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
TA = -25°C
1
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 5.5 A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Oct,22,2013
4
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STF8233
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
ID = 5.5 A
20
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
15
10
5
0
-50
0
50
100
Ciss
1000
Crss
Coss
100
10
0.1
150
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
100
td(off)
tf
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 2.1
tr
td(on)
10
VDD = 16.0 V
VGS = 4.5 V
RG = 6 Ω
1
0.1
4
2
1
ID = 11 A
0
1
10
ID - Drain Current - A
VDD = 4 V
10 V
16 V
3
0
3
6
9
12
15
QG - Gate Charge -nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.3
0.6
0.9
1.2
1.5
1.8
VF(S-D) - Source to Drain Voltage - V
Oct,22,2013
5
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STF8233
Ver 2.1
PACKAGE OUTLINE DIMENSIONS
TDFN
L
E
6
D
TDFN
( 2 x 3 ) - 6L
e
1
H
PIN #1 DOT
BY MARKING
F
C
BOTTOM VIEW
TOP VIEW
PIN #1 ID
CHAMFER 0.300mm
A
B
A1
SYMBOLS
A
A1
D
E
H
L
e
B
C
F
SIDE VIEW
MILLIMETERS
MIN
MAX
0.800
0.700
0.000
0.050
2.950
3.050
1.950
2.050
0.350
0.450
1.550
1.450
1.650
1.750
0.195
0.211
0.200
0.300
0.500 BSC
INCHES
MIN
MAX
0.028
0.031
0.000
0.002
0.120
0.116
0.081
0.077
0.018
0.014
0.061
0.057
0.069
0.065
0.008
0.0076
0.008
0.012
0.020 BSC
Oct,22,2013
6
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STF8233
Ver 2.1
TOP MARKING DEFINITION
TDFN 2x3-6L
Pin 1
8233
Product No.
XXXXXX
SMC Internal Code No.(A,B...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
Oct,22,2013
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