Green Product STF8810 S a mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 16.0 @ VGS=4.5V 8.0A 20V 17.0 @ VGS=4.0V Suface Mount Package. 18.0 @ VGS=3.7V ESD Protected. 21.0 @ VGS=3.1V 27.5 @ VGS=2.5V G2 Bottom Drain Contact S2 S2 D1/D2 G1 S1 T D F N 2X 3 S1 G1 3 4 G2 S1 2 5 S2 S1 1 6 S2 (Bottom view) P IN 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed 8.0 Units V V A 6.4 A 48 A TA=25°C 1.56 W TA=70°C 1.00 W -55 to 150 °C 80 °C/W Limit 20 ±12 c TA=25°C TA=70°C ac PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Jul,18,2014 1 www.samhop.com.tw STF8810 Ver 1.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance Conditions Min VGS=0V , ID=250uA 20 Typ 1 ±1 VDS=16V , VGS=0V VGS= ±8V , VDS=0V VDS=VGS , ID=1.0mA VGS=4.5V , ID=2.0A Max 0.5 1.5 Units V uA uA 10.0 0.9 13.0 16.0 V m ohm VGS=4.0V , ID=2.0A 10.5 13.5 17.0 m ohm VGS=3.7V , ID=2.0A 11.0 14.0 VGS=3.1V , ID=2.0A 12.5 16.0 18.0 m ohm 21.0 m ohm VGS=2.5V , ID=2.0A VDS=10V , ID=4.0A 16.5 20.5 16 27.5 m ohm S b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Qg Fall Time Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=10V,VGS=0V f=1.0MHz 307 144 69 pF pF pF 68 293 ns ns 697 ns 567 ns b VDD=16V ID=4.0A VGS=4.0V RGEN=6 ohm Total Gate Charge VDS=16V,ID=8.0A, VGS=4.0V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=8.0A 9 nC 1.8 nC 5.4 nC 0.88 1.2 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz. Jul,18,2014 2 www.samhop.com.tw STF8810 Ver 1.3 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 3 PT - Total Power Dissipation - W dT - Percentage of rated Power - % 120 100 80 60 40 20 2.5 Mounted on FR-4 board of 1 inch2 , 2oz 2 1.5 1 0.5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 10 R Lim 10us 100us 1 1ms 10ms 100ms 0.1 VGS=4.5V Single Pulse TA=25 C 0.01 0.1 DC 1 10 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A it N) (O DS Mounted on FR-4 board of 1 inch2 , 2oz 100 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Jul,18,2014 3 www.samhop.com.tw STF8810 Ver 1.3 FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 100 4.0 V ID - Drain Current - A ID - Drain Current - A VGS = 4.5 V 20 3.7 V 3.1 V 10 2.5 V 10 25°C 75°C 0.1 0.01 0 0 0.2 0.4 0.6 0.8 0.5 0 1 ЮyfsЮ- Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 1.4 ID = 1.0mA 1.2 1 0.8 0.6 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ 50 VGS = 2.5 V 3.1 V 3.7 V 4.0 V 20 10 4.5 V 0 0.1 1 10 2.5 3 TA = -25°C 10 25°C 75°C 1 125°C 0.1 0.01 0.1 0.01 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 2 100 Tch - Channel Temperature - °C 40 1.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0.4 -50 1 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ TA = -25°C 125°C 1 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 ID = 2.0 A 30 20 10 0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V Jul,18,2014 4 www.samhop.com.tw STF8810 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 25 1000 VGS = 2.5 V 3.1 V Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ Ver 1.3 3.7 V 4.0 V 20 15 10 4.5 V 5 ID = 2.0 A 0 0 -50 50 100 Ciss Coss 100 Crss 10 0.1 150 1 10 100 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C DYNAMIC INPUT CHARACTERISTICS SWITCHING CHARACTERISTICS VDD = 16.0 V VGS = 4.0 V RG = 6 Ω td(off) 1000 VGS - Gate to Drain Voltage - V td(on), tr, td(off), tf - Switching Time - ns 4 tf tr 100 td(on) VDD = 4.0 V 3 10 V 2 16 V 1 ID = 8.0 A 10 0 1 0.1 10 0 3 6 9 12 QG - Gate Charge -nC Tch - Channel Temperature - °C SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 100 10 1 0.1 VGS = 0 V 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V Jul,18,2014 5 www.samhop.com.tw STF8810 Ver 1.3 PACKAGE OUTLINE DIMENSIONS TDFN L E 6 D TDFN ( 2 x 3 ) - 6L e 1 H PIN #1 DOT BY MARKING F C BOTTOM VIEW TOP VIEW PIN #1 ID CHAMFER 0.300mm A B A1 SYMBOLS A A1 D E H L e B C F SIDE VIEW MILLIMETERS MIN MAX 0.800 0.700 0.000 0.050 2.950 3.050 1.950 2.050 0.350 0.450 1.550 1.450 1.650 1.750 0.195 0.211 0.200 0.300 0.500 BSC INCHES MIN MAX 0.028 0.031 0.000 0.002 0.120 0.116 0.081 0.077 0.018 0.014 0.061 0.057 0.069 0.065 0.008 0.0076 0.008 0.012 0.020 BSC Jul,18,2014 6 www.samhop.com.tw STF8810 Ver 1.3 TOP MARKING DEFINITION TDFN 2x3-6L Pin 1 8810 Product No. XXXXXX SMC Internal Code No.(A,B...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) Jul,18,2014 7 www.samhop.com.tw