Green Product SP8608 S a mHop Microelectronics C orp. Ver 2.4 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 9.5 @ VGS=4.5V Suface Mount Package. 9.8 @ VGS=4.0V 20V 12A ESD Protected. 10.5 @ VGS=3.8V 12.5 @ VGS=3.1V 15.0 @ VGS=2.5V S mini 8 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 P IN 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM PD TJ, TSTG -Pulsed c TA=25°C TA=70°C a c Maximum Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Limit 20 ±12 Units V V 12 A 9.6 A 72 A 1.32 W 0.84 W -55 to 150 °C 95 °C/W Dec,09,2014 1 www.samhop.com.tw SP8608 Ver 2.4 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VGS=0V , ID=250uA VDS=16V , VGS=0V Min Typ Max Units 1 V uA ±1 uA 1.0 8.0 1.5 9.5 8.5 9.0 9.8 10.5 V m ohm m ohm 10.5 12.0 12.5 15.0 20 VGS= ±8V , VDS=0V VDS=VGS , ID=1mA VGS=4.5V , ID=3A VGS=4.0V , ID=3A 0.5 VGS=3.8V , ID=3A VGS=3.1V , ID=3A 7.5 8.0 9.5 VGS=2.5V , ID=3A VDS=5V , ID=6A 6.5 7.0 m ohm m ohm 28 m ohm S 772 253 229 pF pF pF 23 ns 84 ns 123 ns b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg VDS=10V,VGS=0V f=1.0MHz b VDD=16V ID=6A VGS=4.5V RGEN= 6 ohm Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=16V,ID=12A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VGS=0V,IS=12A VSD 48 ns 13.1 nC 1.8 nC 6.8 nC 0.86 1.2 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz copper. Dec,09,2014 2 www.samhop.com.tw SP8608 Ver 2.4 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 3 PT - Total Power Dissipation - W dT - Percentage of rated Power - % 120 100 80 60 40 20 2.5 2 Mounted on FR-4 board of 1 inch2 , 2oz 1.5 1 0.5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID - Drain Current - A mit ) Li RDS (ON 10us 100us 10 1ms 1 10ms 1s 0.1 VGS=4.5V Single Pulse TA=25 C DC 0.01 1 0.1 10 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 Mounted on FR-4 board of 1 inch2 , 1oz 100 10 1 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Dec,09,2014 3 www.samhop.com.tw SP8608 Ver 2.4 FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 40 4.0 V VGS = 4.5 V 3.8 V ID - Drain Current - A ID - Drain Current - A 32 3.1 V 24 2.5 V 16 10 25°C 125°C 1 75°C 0.1 8 TA = -25°C 0 0.01 0 0.2 0.4 0.6 0.8 0.5 0 1 VGS(off) - Gate to Source Cut-off Voltage - V 1.5 2 2.5 3 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 100 1.2 ID = 1.0mA 1.1 TA = -25°C 10 1.0 25°C 75°C 1 0.9 125°C 0.8 0.1 0.7 0.6 -50 0 50 100 0.01 0.01 150 0.1 20 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 30 VGS = 2.5 V 3.1 V 3.8 V 4.0 V 4.5 V 10 0 0.1 1 10 1 10 100 ID - Drain Current - A Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ 1 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 ID = 3 A 30 20 10 0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V Dec,09,2014 4 www.samhop.com.tw SP8608 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF ID = 3A 25 VGS = 2.5 V 3.1 V 3.8 V 4.0 V 4.5 V 20 15 10 5 0 0 -50 50 100 Ciss 1000 Crss Coss 100 10 0.1 150 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS VDD = 16.0 V VGS = 4.5 V RG = 6 Ω VGS - Gate to Drain Voltage - V td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ Ver 2.4 td(off) tr 100 tf td(on) 10 4 1 10 10 V 16 V 2 1 ID = 12 A 0 1 0.1 VDD = 4 V 3 0 3 6 9 12 15 QG - Gate Charge -nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 100 10 1 0.1 VGS = 0 V 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Dec,09,2014 5 www.samhop.com.tw SP8608 Ver 2.4 PACKAGE OUTLINE DIMENSIONS S mini 8 L1 e b D L E1 E BOTTOM VIEW TOP VIEW 01 A c SIDE VIEW SYMBOLS A A1 b c D E E1 e L L1 01 MIN 0.700 0.000 0.240 0.080 2.800 2.700 2.200 0.200 0.000 0o MILLIMETERS NOM 0.800 0.300 0.152 2.900 2.800 2.300 0.650 BSC 0.375 10o A1 MAX 0.900 0.050 0.350 0.250 3.000 2.900 2.400 0.450 0.100 12o Dec,09,2014 6 www.samhop.com.tw SP8608 Ver 2.4 TOP MARKING DEFINITION S mini 8 SamHop Logo 8608 XXXXXX Product No. Pin 1 SMC internal Code No. Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Dec,09,2014 7 www.samhop.com.tw