SP8608

Green
Product
SP8608
S a mHop Microelectronics C orp.
Ver 2.4
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
9.5 @ VGS=4.5V
Suface Mount Package.
9.8 @ VGS=4.0V
20V
12A
ESD Protected.
10.5 @ VGS=3.8V
12.5 @ VGS=3.1V
15.0 @ VGS=2.5V
S mini 8
D2
5
4
G2
D2
6
3
S2
D1
7
2
G1
D1
8
1
S1
P IN 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
PD
TJ, TSTG
-Pulsed
c
TA=25°C
TA=70°C
a c
Maximum Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Limit
20
±12
Units
V
V
12
A
9.6
A
72
A
1.32
W
0.84
W
-55 to 150
°C
95
°C/W
Dec,09,2014
1
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SP8608
Ver 2.4
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VGS=0V , ID=250uA
VDS=16V , VGS=0V
Min
Typ
Max
Units
1
V
uA
±1
uA
1.0
8.0
1.5
9.5
8.5
9.0
9.8
10.5
V
m ohm
m ohm
10.5
12.0
12.5
15.0
20
VGS= ±8V , VDS=0V
VDS=VGS , ID=1mA
VGS=4.5V , ID=3A
VGS=4.0V , ID=3A
0.5
VGS=3.8V , ID=3A
VGS=3.1V , ID=3A
7.5
8.0
9.5
VGS=2.5V , ID=3A
VDS=5V , ID=6A
6.5
7.0
m ohm
m ohm
28
m ohm
S
772
253
229
pF
pF
pF
23
ns
84
ns
123
ns
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
VDS=10V,VGS=0V
f=1.0MHz
b
VDD=16V
ID=6A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=16V,ID=12A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VGS=0V,IS=12A
VSD
48
ns
13.1
nC
1.8
nC
6.8
nC
0.86
1.2
V
Notes
_ 1%.
_ 10us, Duty Cycle <
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz copper.
Dec,09,2014
2
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SP8608
Ver 2.4
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
2
Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID - Drain Current - A
mit
) Li
RDS
(ON
10us
100us
10
1ms
1
10ms
1s
0.1
VGS=4.5V
Single Pulse
TA=25 C
DC
0.01
1
0.1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - °C/W
1000
Mounted on FR-4 board of
1 inch2 , 1oz
100
10
1
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Dec,09,2014
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SP8608
Ver 2.4
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
40
4.0 V
VGS = 4.5 V
3.8 V
ID - Drain Current - A
ID - Drain Current - A
32
3.1 V
24
2.5 V
16
10
25°C
125°C
1
75°C
0.1
8
TA = -25°C
0
0.01
0
0.2
0.4
0.6
0.8
0.5
0
1
VGS(off) - Gate to Source Cut-off Voltage - V
1.5
2
2.5
3
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
1.2
ID = 1.0mA
1.1
TA = -25°C
10
1.0
25°C
75°C
1
0.9
125°C
0.8
0.1
0.7
0.6
-50
0
50
100
0.01
0.01
150
0.1
20
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
VGS = 2.5 V
3.1 V
3.8 V
4.0 V
4.5 V
10
0
0.1
1
10
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - °C
RDS(on) - Drain to Source On-state Resistance - mΩ
1
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 3 A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Dec,09,2014
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SP8608
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
ID = 3A
25
VGS = 2.5 V
3.1 V
3.8 V
4.0 V
4.5 V
20
15
10
5
0
0
-50
50
100
Ciss
1000
Crss
Coss
100
10
0.1
150
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
VDD = 16.0 V
VGS = 4.5 V
RG = 6 Ω
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 2.4
td(off)
tr
100
tf
td(on)
10
4
1
10
10 V
16 V
2
1
ID = 12 A
0
1
0.1
VDD = 4 V
3
0
3
6
9
12
15
QG - Gate Charge -nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
Dec,09,2014
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SP8608
Ver 2.4
PACKAGE OUTLINE DIMENSIONS
S mini 8
L1
e
b
D
L
E1
E
BOTTOM VIEW
TOP VIEW
01
A
c
SIDE VIEW
SYMBOLS
A
A1
b
c
D
E
E1
e
L
L1
01
MIN
0.700
0.000
0.240
0.080
2.800
2.700
2.200
0.200
0.000
0o
MILLIMETERS
NOM
0.800
0.300
0.152
2.900
2.800
2.300
0.650 BSC
0.375
10o
A1
MAX
0.900
0.050
0.350
0.250
3.000
2.900
2.400
0.450
0.100
12o
Dec,09,2014
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SP8608
Ver 2.4
TOP MARKING DEFINITION
S mini 8
SamHop Logo
8608
XXXXXX
Product No.
Pin 1
SMC internal Code No.
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Dec,09,2014
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