Green Product SP8009 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 6.0 @ VGS=10V 30V Suface Mount Package. 24A 7.2 @ VGS=6V P in 1 TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM Drain Current-Continuous -Pulsed TA=25°C a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Limit Units 30 V ±20 24 V A 72 A 1.67 W -55 to 150 °C 75 °C/W Jul,18,2013 1 www.samhop.com.tw SP8009 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS VGS=0V , ID=10mA 30 VGS=-20V , ID=10mA 10 BVDSS BVDSX Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=30V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±16V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) V 10 uA ±100 nA 1.5 3 V VGS=10V , ID=12A 6 7.2 m ohm VGS=6V , ID=12A 7.2 11 m ohm VDS=10V,VGS=0V f=1.0MHz 1670 382 333 pF pF pF 29 ns ns VDS=VGS , ID=0.2mA Drain-Source On-State Resistance V 1 b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Qg Fall Time Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge b VDD=15V ID=12A VGS=10V RGEN= 4.7 ohm 35 68 17 ns VDS=24V,ID=12A,VGS=10V 31 nC VDS=24V,ID=12A, VGS=10V 2.5 nC 10 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=24A 0.86 ns 1.3 V Notes _ 2%. _ 300us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. Jul,18,2013 2 www.samhop.com.tw SP8009 Ver 1.1 ID - VDS 4.5 Drain Current ID (A) ID - VDS 50 3.6 3.4 10 3.7 10 3.3 3.2 16 4.0 3.1 Drain Current ID (A) 20 3.0 12 2.9 8 2.8 2.7 2.6 4 40 3.6 5.0 3.4 3.5 3.3 30 3.2 3.1 20 3.0 2.9 10 2.7 V GS =2.5V V GS =2.5V 0 0 0 0.4 0.2 0.8 0.6 Drain-Source Voltage VDS 0 1.0 (V) Drain-Source Voltage VDS ID - VGS (V) VDS - VGS (V) 24 Drain-Source Voltage VDS Drain Current ID (A) 2.0 0.5 30 18 Tj=100 C -55 C 12 25 C 6 0 0 2 1 4 3 0.4 0.3 0.2 ID=24A 12A 0.1 6A 0 0 5 Gate-Source Voltage VGS (V) RDS(ON) - ID 10 RDS(ON) - Ta 10 VGS=10V 1 10 10 RDS(on) (m Ω) Drain-source ON resistance 12 VGS=6V 1 0.1 8 6 4 2 Gate-Source Voltage VGS (V) 100 Drain-source on-resistance RDS(ON) (mΩ) 1.6 1.2 0.8 0.4 8 VGS=6V Drain Current ID (A) ID = 6, 12, 24A 6 4 VGS=10V 2 0 -80 100 ID = 6, 12, 24A -40 0 40 80 120 160 Ambient temperature Ta (°C ) Jul,18,2013 3 www.samhop.com.tw SP8009 Ver 1.1 IDR Capacitance VDS 4.5 6 10 1 1 0 -0.2 -0.4 VGS=0V -0.6 -0.8 -1.0 Ciss 1000 Coss Crss 100 0.1 -1.2 1 Drain-source voltage VDS (V) Drain-source voltage VDS (V) Dynamic input/output characteristics Ta 50 2.5 Drain-source voltage VDS (V) Gate threshold voltage Vth (V) Vth 2.0 1.5 1.0 0.5 VDS=VGS ID=0.2mA -40 40 0 80 120 160 Ambient temperature Ta (°C ) PD 15 ID=24A 12 40 30 6 12 VDD=24V 9 6 20 VDD=24V 12 10 0 0 -80 Drain power dissipation PD (W) 100 10 3 6 0 4 8 12 16 20 24 28 32 Gate-source voltage VGS (V) 10 0.1 VDS 10000 Capacitance C (pF) Drain reverse current IDR (A) 100 0 Total gate charge Qg (nC) Ta 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 Ambient temperature Ta (°C ) Jul.18,2013 4 www.samhop.com.tw SP8009 Ver 1.1 rth - tw Transient thermal impedance rth (°C/W) 1000 Mounted on FR-4 board 100 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area Drain current ID (A) 100 RD ON S( )L imi t t=1 t=1 10 t=1 t=1 0.1 us ms s s DC 1 0.1 0m 00 VGS=10V Single Pulse TA=25 C 1 10 Drain-source voltage VDS (V) Jul,18,2013 5 www.samhop.com.tw SP8009 Ver 1.1 PACKAGE OUTLINE DIMENSIONS TSON 3.3 x 3.3 A E2 C H D2 M D D1 D3 L1 L PIN 1 b e 0 E1 E SYMBOLS A b C D D1 D2 D3 E E1 E2 e H L L1 M MILLIMETERS MIN. NOM. 0.75 0.70 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.88 1.78 0.13 3.20 3.30 3.00 3.15 2.39 2.49 0.65 BSC 0.39 0.30 0.30 0.40 0.13 10o 0 MAX. 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 2.59 0.50 0.50 0.15 12o Jul,18,2013 6 www.samhop.com.tw