STF8211

Green
Product
STF8211
S a mHop Microelectronics C orp.
Ver 1.5
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
13.5 @ VGS=4.0V
Suface Mount Package.
8A
20V
20.0 @ VGS=2.5V
ESD Protected.
G2
Bottom Drain Contact (D1/D2)
S2
S2
D1/D2
G1
S1
T DF N 2X 3
S1
G1 3
4 G2
S1 2
5
S2
S1
6
S2
1
(Bottom view)
P IN 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
c
TA=25°C
TA=70°C
ac
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
TA=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Limit
20
±12
Units
V
V
8
A
6.4
A
48
A
1.56
W
1.00
W
-55 to 150
°C
80
°C/W
Jul,18,2014
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STF8211
Ver 1.5
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
Input Capacitance
COSS
CRSS
tD(OFF)
Reverse Transfer Capacitance
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS=0V , ID=250uA
20
Typ
Max
Units
V
VDS=16V , VGS=0V
1
uA
VGS= ±8V , VDS=0V
±1
uA
VDS=VGS , ID=250uA
VGS=4.0V , ID=2.0A
0.5
0.7
1.5
8.0
10.5
13.5
V
m ohm
VGS=3.7V , ID=2.0A
8.5
11.0
14.5
m ohm
VGS=3.1V , ID=2.0A
9.5
12.5
16.5
m ohm
VGS=2.5V , ID=2.0A
10.5
15.0
20.0
m ohm
VDS=5V , ID=4A
VDS=10V,VGS=0V
Output Capacitance
Rise Time
Min
35
S
b
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Conditions
f=1.0MHz
705
pF
235
218
pF
25
89
ns
pF
b
VDD=10V
ID=1A
VGS=4.0V
RGEN=6 ohm
ns
110
ns
102
ns
VDS=10V,ID=4A,VGS=4.0V
13.4
nC
VDS=10V,ID=4A,VGS=2.5V
10.2
nC
2
nC
6
nC
VDS=10V,ID=4A,
VGS=4V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=1A
0.76
1.2
V
Notes
_ 1%.
_ 10us, Duty Cycle <
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Jul,18,2014
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STF8211
Ver 1.5
60
15
VGS=3V
48
ID, Drain Current(A)
ID, Drain Current(A)
VGS=4V
VGS=2V
VGS=2.5V
36
24
VGS=1.5V
12
Tj=125 C
-55 C
6
25 C
0
0
2.0
1.5
1.0
0.5
2.5
0
3.0
0.4
0.8
1.2
1.6
2.4
2.0
V DS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
30
2.0
25
1.8
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
9
3
0
20
VGS=2.5V
15
10
VGS=4.0V
5
1
12
1
24
36
48
1.6
V G S =4.0V
ID= 2 A
1.4
1.2
V G S =2.5V
I D =2A
1.0
0
60
0
25
50
75
100
125
150
T j ( °C )
I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
Vth, Normalized
Gate-Source Threshold Voltage
12
VDS=VGS
ID=250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,18,2014
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STF8211
Ver 1.5
20.0
30
Is, Source-drain current(A)
ID=2A
25
RDS(on)(m Ω)
20
125 C
15
10
75 C
25 C
5
0
1.5
1.0
0.5
2.5
2.0
3.0
3.5
0
0.25
0.50
0.75
1.00
1.25
V GS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
1000
Ciss
800
600
Crss
400
25 C
75 C
4.0
1200
C, Capacitance(pF)
5.0
1.0
0
125 C
10.0
Coss
200
10
VDS=10V
ID=4A
8
6
4
2
0
0
0
2
4
6
8
10
12
0
3
6
9
12 15
18
21 24
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
300
100
Tf
TD(off )
Tr
I D, Drain Current(A)
Switching Time(ns)
100
TD(on)
10
VDS=10V,ID=1A
VGS=4.0V
10
L im
it
10
100
us
us
1m
s
m
10 s
0m
s
1
0.03
0.1
100
R
N)
10
0.1
1
1
10
(O
DS
DC
VGS=4.0V
Single Pulse
TA=25 C
1
10
20
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,18,2014
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STF8211
Ver 1.5
Normalized Transient
Thermal Resistance
10
1
0.5
0.2
P DM
0.1
0.1
t1
t2
0.05
1.
2.
3.
4.
0.02
0.01
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
Jul,18,2014
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STF8211
Ver 1.5
PACKAGE OUTLINE DIMENSIONS
TDFN
L
E
6
D
TDFN
( 2 x 3 ) - 6L
e
1
H
PIN #1 DOT
BY MARKING
F
C
BOTTOM VIEW
TOP VIEW
PIN #1 ID
CHAMFER 0.300mm
A
B
A1
SYMBOLS
A
A1
D
E
H
L
e
B
C
F
SIDE VIEW
MILLIMETERS
MIN
MAX
0.800
0.700
0.000
0.050
2.950
3.050
1.950
2.050
0.350
0.450
1.550
1.450
1.650
1.750
0.195
0.211
0.200
0.300
0.500 BSC
INCHES
MIN
MAX
0.028
0.031
0.000
0.002
0.120
0.116
0.081
0.077
0.018
0.014
0.061
0.057
0.069
0.065
0.008
0.0076
0.008
0.012
0.020 BSC
Jul,18,2014
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STF8211
Ver 1.5
TOP MARKING DEFINITION
TDFN 2x3-6L
Pin 1
8211
Product No.
XXXXXX
SMC Internal Code No.(A,B...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
Jul,18,2014
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