Green Product STF8211 S a mHop Microelectronics C orp. Ver 1.5 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 13.5 @ VGS=4.0V Suface Mount Package. 8A 20V 20.0 @ VGS=2.5V ESD Protected. G2 Bottom Drain Contact (D1/D2) S2 S2 D1/D2 G1 S1 T DF N 2X 3 S1 G1 3 4 G2 S1 2 5 S2 S1 6 S2 1 (Bottom view) P IN 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed c TA=25°C TA=70°C ac PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C TA=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Limit 20 ±12 Units V V 8 A 6.4 A 48 A 1.56 W 1.00 W -55 to 150 °C 80 °C/W Jul,18,2014 1 www.samhop.com.tw STF8211 Ver 1.5 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS CISS Input Capacitance COSS CRSS tD(OFF) Reverse Transfer Capacitance Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS=0V , ID=250uA 20 Typ Max Units V VDS=16V , VGS=0V 1 uA VGS= ±8V , VDS=0V ±1 uA VDS=VGS , ID=250uA VGS=4.0V , ID=2.0A 0.5 0.7 1.5 8.0 10.5 13.5 V m ohm VGS=3.7V , ID=2.0A 8.5 11.0 14.5 m ohm VGS=3.1V , ID=2.0A 9.5 12.5 16.5 m ohm VGS=2.5V , ID=2.0A 10.5 15.0 20.0 m ohm VDS=5V , ID=4A VDS=10V,VGS=0V Output Capacitance Rise Time Min 35 S b SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Conditions f=1.0MHz 705 pF 235 218 pF 25 89 ns pF b VDD=10V ID=1A VGS=4.0V RGEN=6 ohm ns 110 ns 102 ns VDS=10V,ID=4A,VGS=4.0V 13.4 nC VDS=10V,ID=4A,VGS=2.5V 10.2 nC 2 nC 6 nC VDS=10V,ID=4A, VGS=4V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=1A 0.76 1.2 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz. Jul,18,2014 2 www.samhop.com.tw STF8211 Ver 1.5 60 15 VGS=3V 48 ID, Drain Current(A) ID, Drain Current(A) VGS=4V VGS=2V VGS=2.5V 36 24 VGS=1.5V 12 Tj=125 C -55 C 6 25 C 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 0.4 0.8 1.2 1.6 2.4 2.0 V DS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 30 2.0 25 1.8 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 9 3 0 20 VGS=2.5V 15 10 VGS=4.0V 5 1 12 1 24 36 48 1.6 V G S =4.0V ID= 2 A 1.4 1.2 V G S =2.5V I D =2A 1.0 0 60 0 25 50 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 12 VDS=VGS ID=250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,18,2014 3 www.samhop.com.tw STF8211 Ver 1.5 20.0 30 Is, Source-drain current(A) ID=2A 25 RDS(on)(m Ω) 20 125 C 15 10 75 C 25 C 5 0 1.5 1.0 0.5 2.5 2.0 3.0 3.5 0 0.25 0.50 0.75 1.00 1.25 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) 1000 Ciss 800 600 Crss 400 25 C 75 C 4.0 1200 C, Capacitance(pF) 5.0 1.0 0 125 C 10.0 Coss 200 10 VDS=10V ID=4A 8 6 4 2 0 0 0 2 4 6 8 10 12 0 3 6 9 12 15 18 21 24 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 100 Tf TD(off ) Tr I D, Drain Current(A) Switching Time(ns) 100 TD(on) 10 VDS=10V,ID=1A VGS=4.0V 10 L im it 10 100 us us 1m s m 10 s 0m s 1 0.03 0.1 100 R N) 10 0.1 1 1 10 (O DS DC VGS=4.0V Single Pulse TA=25 C 1 10 20 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,18,2014 4 www.samhop.com.tw STF8211 Ver 1.5 Normalized Transient Thermal Resistance 10 1 0.5 0.2 P DM 0.1 0.1 t1 t2 0.05 1. 2. 3. 4. 0.02 0.01 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Jul,18,2014 5 www.samhop.com.tw STF8211 Ver 1.5 PACKAGE OUTLINE DIMENSIONS TDFN L E 6 D TDFN ( 2 x 3 ) - 6L e 1 H PIN #1 DOT BY MARKING F C BOTTOM VIEW TOP VIEW PIN #1 ID CHAMFER 0.300mm A B A1 SYMBOLS A A1 D E H L e B C F SIDE VIEW MILLIMETERS MIN MAX 0.800 0.700 0.000 0.050 2.950 3.050 1.950 2.050 0.350 0.450 1.550 1.450 1.650 1.750 0.195 0.211 0.200 0.300 0.500 BSC INCHES MIN MAX 0.028 0.031 0.000 0.002 0.120 0.116 0.081 0.077 0.018 0.014 0.061 0.057 0.069 0.065 0.008 0.0076 0.008 0.012 0.020 BSC Jul,18,2014 6 www.samhop.com.tw STF8211 Ver 1.5 TOP MARKING DEFINITION TDFN 2x3-6L Pin 1 8211 Product No. XXXXXX SMC Internal Code No.(A,B...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) Jul,18,2014 7 www.samhop.com.tw