Green Product SP8611 S a mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 12.5 @ VGS=4.5V Suface Mount Package. 13.5 @ VGS=4.0V 20V 8A ESD Protected. 14.0 @ VGS=3.7V 15.0 @ VGS=3.1V 18.0 @ VGS=2.5V S mini 8 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 P IN 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed TA=25°C 8 Units V V A TA=70°C 6.4 A 48 A TA=25°C 1.32 W TA=70°C 0.84 W -55 to 150 °C 95 °C/W Limit 20 ±12 b ab PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Jan,09,2015 1 www.samhop.com.tw SP8611 Ver 2.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Conditions Min VGS=0V , ID=250uA 20 Typ Max Units 1 ±1 uA V VDS=16V , VGS=0V VGS= ±8V , VDS=0V uA VDS=VGS , ID=1mA 0.5 0.9 1.5 VGS=4.5V , ID=4A 8.5 10.5 12.5 V m ohm VGS=4.0V , ID=4A 9.0 11.0 13.5 m ohm VGS=3.7V , ID=4A 9.5 11.5 14.0 m ohm VGS=3.1V , ID=4A 10.0 12.0 15.0 m ohm VGS=2.5V , ID=2A 11.0 14.0 18.0 m ohm VDS=5V , ID=4A VDD=16V ID=4A VGS=4.5V RGEN=6 ohm S 23 110 ns 406 ns 1338 ns 917 ns VDS=16V,ID=8A,VGS=4.5V 11 nC VDS=16V,ID=8A, VGS=4.5V 2.2 nC 5.2 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=8A 0.86 1.2 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Drain current limited by maximum junction temperature. c.Mounted on FR4 Board of 1 inch2 , 2oz. Jan,09,2015 2 www.samhop.com.tw SP8611 Ver 2.0 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 3 PT - Total Power Dissipation - W dT - Percentage of rated Power - % 120 100 80 60 40 20 2.5 2 Mounted on FR-4 board of 1 inch2 , 2oz 1.5 1 0.5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 100 R 10 DS (O N) L im it 10us 100us 1ms 10ms 100ms 1 VGS=4.5V Single Pulse TA=25 C 0.1 0.03 0.1 1s DC 1 10 20 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 Mounted on FR-4 board of 1 inch2 , 1oz 100 10 1 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Jan,09,2015 3 www.samhop.com.tw SP8611 Ver 2.0 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 30 4.0 V 20 ID - Drain Current - A ID - Drain Current - A VGS = 4.5 V 3.7 V 3.1 V 2.5 V 10 10 25°C 125°C 1 75°C 0.1 TA = -25°C 0 0.01 0 0.2 0.4 0.6 0.8 0.5 0 1 VGS(off) - Gate to Source Cut-off Voltage - V 1.5 2 2.5 3 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 100 1.1 ID = 1.0mA TA = -25°C 1.0 10 0.9 25°C 1 0.8 125°C 75°C 0.7 0.1 0.6 0.5 -50 0 50 100 0.01 0.01 150 0.1 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 30 20 VGS = 2.5 V 3.1 V 3.7 V 4.0 V 4.5 V 10 0 0.1 1 10 1 10 100 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 1 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 ID = 4 A 30 20 10 0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V Jan,09,2015 4 www.samhop.com.tw SP8611 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 ID = 4A VGS = 2.5 V 3.1 V 3.7 V 4.0 V 4.5 V 25 20 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ Ver 2.0 15 10 5 0 0 -50 50 100 150 td(off) tf 1000 tr td(on) 100 VDD = 16.0 V VGS = 4.5 V RG = 6 Ω 10 0.1 1 Tch - Channel Temperature - °C 10 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT CHARACTERISTICS 4 IF - Diode Forward Current - A VGS - Gate to Drain Voltage - V 100 VDD = 4 V 3 10 V 16 V 2 1 10 1 0.1 ID = 8A 0 VGS = 0 V 0.01 0 3 6 9 12 0 15 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF(S-D) - Source to Drain Voltage - V QG - Gate Charge -nC Jan,09,2015 5 www.samhop.com.tw SP8611 Ver 2.0 PACKAGE OUTLINE DIMENSIONS S mini 8 L1 e b D L E1 E BOTTOM VIEW TOP VIEW 01 A c SIDE VIEW SYMBOLS A A1 b c D E E1 e L L1 01 MIN 0.700 0.000 0.240 0.080 2.800 2.700 2.200 0.200 0.000 0o MILLIMETERS NOM 0.800 0.300 0.152 2.900 2.800 2.300 0.650 BSC 0.375 10o A1 MAX 0.900 0.050 0.350 0.250 3.000 2.900 2.400 0.450 0.100 12o Jan,09,2015 6 www.samhop.com.tw SP8611 Ver 2.0 TOP MARKING DEFINITION S mini 8 SamHop Logo 8611 XXXXXX Product No. Pin 1 SMC internal Code No. Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jan,09,2015 7 www.samhop.com.tw