SP8611

Green
Product
SP8611
S a mHop Microelectronics C orp.
Ver 2.0
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
12.5 @ VGS=4.5V
Suface Mount Package.
13.5 @ VGS=4.0V
20V
8A
ESD Protected.
14.0 @ VGS=3.7V
15.0 @ VGS=3.1V
18.0 @ VGS=2.5V
S mini 8
D2
5
4
G2
D2
6
3
S2
D1
7
2
G1
D1
8
1
S1
P IN 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
TA=25°C
8
Units
V
V
A
TA=70°C
6.4
A
48
A
TA=25°C
1.32
W
TA=70°C
0.84
W
-55 to 150
°C
95
°C/W
Limit
20
±12
b
ab
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Jan,09,2015
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SP8611
Ver 2.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero
Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Conditions
Min
VGS=0V , ID=250uA
20
Typ
Max
Units
1
±1
uA
V
VDS=16V , VGS=0V
VGS= ±8V , VDS=0V
uA
VDS=VGS , ID=1mA
0.5
0.9
1.5
VGS=4.5V , ID=4A
8.5
10.5
12.5
V
m ohm
VGS=4.0V , ID=4A
9.0
11.0
13.5
m ohm
VGS=3.7V , ID=4A
9.5
11.5
14.0
m ohm
VGS=3.1V , ID=4A
10.0
12.0
15.0
m ohm
VGS=2.5V , ID=2A
11.0
14.0
18.0
m ohm
VDS=5V , ID=4A
VDD=16V
ID=4A
VGS=4.5V
RGEN=6 ohm
S
23
110
ns
406
ns
1338
ns
917
ns
VDS=16V,ID=8A,VGS=4.5V
11
nC
VDS=16V,ID=8A,
VGS=4.5V
2.2
nC
5.2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=8A
0.86
1.2
V
Notes
_ 1%.
_ 10us, Duty Cycle <
a.Pulse Test:Pulse Width <
b.Drain current limited by maximum junction temperature.
c.Mounted on FR4 Board of 1 inch2 , 2oz.
Jan,09,2015
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SP8611
Ver 2.0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
2
Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
100
R
10
DS
(O
N)
L im
it
10us
100us
1ms
10ms
100ms
1
VGS=4.5V
Single Pulse
TA=25 C
0.1
0.03
0.1
1s
DC
1
10
20
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - °C/W
1000
Mounted on FR-4 board of
1 inch2 , 1oz
100
10
1
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Jan,09,2015
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SP8611
Ver 2.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
30
4.0 V
20
ID - Drain Current - A
ID - Drain Current - A
VGS = 4.5 V
3.7 V
3.1 V
2.5 V
10
10
25°C
125°C
1
75°C
0.1
TA = -25°C
0
0.01
0
0.2
0.4
0.6
0.8
0.5
0
1
VGS(off) - Gate to Source Cut-off Voltage - V
1.5
2
2.5
3
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
1.1
ID = 1.0mA
TA = -25°C
1.0
10
0.9
25°C
1
0.8
125°C
75°C
0.7
0.1
0.6
0.5
-50
0
50
100
0.01
0.01
150
0.1
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
20
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
10
0
0.1
1
10
1
10
100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
1
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 4 A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Jan,09,2015
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SP8611
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
ID = 4A
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
25
20
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 2.0
15
10
5
0
0
-50
50
100
150
td(off)
tf
1000
tr
td(on)
100
VDD = 16.0 V
VGS = 4.5 V
RG = 6 Ω
10
0.1
1
Tch - Channel Temperature - °C
10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DYNAMIC INPUT CHARACTERISTICS
4
IF - Diode Forward Current - A
VGS - Gate to Drain Voltage - V
100
VDD = 4 V
3
10 V
16 V
2
1
10
1
0.1
ID = 8A
0
VGS = 0 V
0.01
0
3
6
9
12
0
15
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
QG - Gate Charge -nC
Jan,09,2015
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SP8611
Ver 2.0
PACKAGE OUTLINE DIMENSIONS
S mini 8
L1
e
b
D
L
E1
E
BOTTOM VIEW
TOP VIEW
01
A
c
SIDE VIEW
SYMBOLS
A
A1
b
c
D
E
E1
e
L
L1
01
MIN
0.700
0.000
0.240
0.080
2.800
2.700
2.200
0.200
0.000
0o
MILLIMETERS
NOM
0.800
0.300
0.152
2.900
2.800
2.300
0.650 BSC
0.375
10o
A1
MAX
0.900
0.050
0.350
0.250
3.000
2.900
2.400
0.450
0.100
12o
Jan,09,2015
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SP8611
Ver 2.0
TOP MARKING DEFINITION
S mini 8
SamHop Logo
8611
XXXXXX
Product No.
Pin 1
SMC internal Code No.
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Jan,09,2015
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