STS8212

STS8212
Gre
r
Pro
S a mHop Microelectronics C orp.
Ver 1.0
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
14.5 @ VGS=4.5V
Suface Mount Package.
15 @ VGS=4.0V
20V
8A
ESD Protected.
15.5 @ VGS=3.7V
18 @ VGS=3.1V
22 @ VGS=2.5V
S1
D1/D2
S2
1
6
2
3
5
4
D2
D1
TSOT 26
Top View
G1
D1/D2
G2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
TA=25°C
TA=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
20
±12
Units
V
V
8
A
6.4
A
50
A
TA=25°C
1.25
W
TA=70°C
0.8
W
-55 to 150
°C
100
°C/W
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Mar,09,2012
1
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STS8212
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=16V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±12V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Typ
Max
20
1
±10
VDS=VGS , ID=1mA
0.5
1
VGS=4.5V , ID=4A
VGS=4.0V , ID=4A
VGS=3.7V , ID=4A
10.5
12.5
13
13.5
VGS=3.1V , ID=4A
VGS=2.5V , ID=4A
gFS
Min
11
12
13
14.5
15
18
Units
V
uA
uA
1.5
V
14.5 m ohm
15 m ohm
15.5 m ohm
18
22
m ohm
m ohm
VDS=5V , ID=4A
20
S
VDS=10V,VGS=0V
f=1.0MHz
481
164
150
pF
pF
pF
16
ns
50
ns
42
ns
31
ns
10
nC
2.1
nC
5.2
nC
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=16V
ID=4A
VGS=4.5V
RGEN= 6 ohm
VDS=16V,ID=8A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=4A
0.79
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 1%.
_ 10us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Mar,09,2012
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STS8212
Ver 1.0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
2
Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
mit
) Li
R
10
DS
(ON
10us
100us
1ms
1
10ms
1s
VGS=4.5V
Single Pulse
TA=25 C
0.1
0.01
0.1
DC
1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
Mounted on FR-4 board of
1 inch2 , 2oz
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Mar,09,2012
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STS8212
Ver 1.0
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
30
4.0 V
3.7 V
ID - Drain Current - A
ID - Drain Current - A
24
3.1 V
18
2.5 V
12
10
125°C
TA = -25°C
1
25°C
0.1
6
75°C
0
0.01
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
1.1
ID = 1.0mA
1.0
0.9
0.8
0.7
0.6
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
20
10
1
10
3
TA = -25°C
10
25°C
1
75°C
125°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
0
0.1
2.5
100
Tch - Channel Temperature - °C
30
2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
1.5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
0.5
-50
1
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 4A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Mar,09,2012
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STS8212
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
ID = 4A
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 1.0
50
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
40
30
20
10
0
0
-50
50
100
1000
Ciss
Coss
Crss
100
10
0.1
150
1
10
100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
VDD = 16.0 V
VGS = 4.5 V
RG = 6 Ω
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS
100
td(off)
tr
tf
td(on)
10
1
0.1
4
10 V
1
10
16 V
2
1
ID = 8 A
0
ID - Drain Current - A
VDD = 4.0 V
3
0
2
4
6
8
10
12
QG - Gate Charge -nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
Mar,09,2012
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STS8212
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
TSOT 26
D
6
5
4
1
2
3
E1
e
DETAIL "A"
A1
b
L
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
L1
L1
DETAIL "A"
A
E
e1
MILLIMETERS
INCHES
MIN
MAX
2.692
3.099
2.591
3.000
1.397
1.803
0.950 REF.
1.900 REF.
0.300
0.500
0.080
0.200
0.000
0.100
0.700
0.800
0.600
0.300
0.600 REF.
MIN
MAX
0.106
0.122
0.118
0.102
0.055
0.071
0.037 REF.
0.075 REF.
0.020
0.012
0.008
0.003
0.000
0.004
0.028
0.032
0.012
0.024
0.023 REF.
0
O
6
O
0
O
6
O
Mar,09,2012
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STS8212
Ver 1.0
TSOT 26 Tape and Reel Data
TSOT 26 Carrier Tape
+0.10
О1.50 0.00
3.50 + 0.05
4.00 + 0.10
1.75 + 0.10
2.00 + 0.05
8.0 + 0.30
A
B
B
A
R0
4.00 + 0.10
3.3 + 0.1
.3
5
.3
5 M
ax
0.25 + 0.05
+0.10
О1.00 0.00
Bo 3.2 + 0.1
R0
R0
.3
M
ax
R0
.3
SECTION B-B
Ko 1.5 + 0.1
SECTION A-A
TSOT 26 Reel
О60 + 0.5
О178.0 + 0.5
1.50
10.6
2.2 + 0.5
9.0
+1.5
-0
О13.5 + 0.5
SCALE 2:1
SOT 26
Mar,09,2012
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