Green Product SDU/D02N60 S a mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Max 600V 2A 4.7 @ VGS=10V Rugged and reliable. Suface Mount Package. D G D G S SDU SERIES TO-252(D-PAK) G D S SDD SERIES TO-251S(I-PAK) ORDERING INFORMATION Ordering Code Package S SDD SERIES TO-251L(I-PAK) RoHS Status Halogen Free SDU02N60HZ TO-252 Marking Code SDU02N60 SDD02N60HS TO-251S SDD02N60 Tube Halogen Free SDD02N60HL TO-251L SDD02N60 Tube Halogen Free Delivery Mode Reel ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed a d TC=25°C TC=100°C b PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TC=25°C TC=100°C Limit 600 ±30 Units V V 2 A 1.3 A 5.8 A 42 W 17 W -55 to 150 °C 3 °C/W 50 °C/W THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Dec,24,2013 1 www.samhop.com.tw SDU/D02N60 Ver 2.2 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance VGS(th) RDS(ON) gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time Min VGS=0V , ID=250uA 600 VGS= ±30V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=20V , ID=1A 2 Max Units 1 ±100 uA V VDS=480V , VGS=0V VDS=25V,VGS=0V f=1.0MHz 3 3.6 4 4.7 nA 1.6 V ohm S 300 37 pF pF 9 pF 17.5 ns 17 ns c VDD=300V ID=1A VGS=10V RGEN=6 ohm tf Qg Total Gate Charge VDS=300V,ID=1A,VGS=10V Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=300V,ID=1A, VGS=10V Fall Time Typ c Input Capacitance Output Capacitance tD(ON) Conditions 21 ns 8 ns 7 nC 1.5 nC 2.9 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A 0.79 1.4 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Drain current limited by maximum junction temperature. Dec,24,2013 2 www.samhop.com.tw SDU/D02N60 Ver 2.2 1.80 4 ID, Drain Current(A) ID, Drain Current(A) 5 VGS = 10V VGS = 6V 3 2 VGS = 5V 1 0 0 15 10 5 25 20 1.44 1.08 Tj=125 C 25 C 0.36 0 30 6.0 7.2 Figure 2. Transfer Characteristics 3.0 7.5 2.6 RDS(ON), On-Resistance Normalized 9.0 6.0 R DS(on)( Ω) 4.8 3.6 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 4.5 V G S =10V V G S =10V I D = 1A 2.2 1.8 1.4 1.0 1.5 0 0 0.1 0.7 1.4 2.1 2.8 0 3.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 50 Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 25 Tj( C) ID, Drain Current (A) Vth, Normalized Gate-Source Threshold Voltage 2.4 1.2 0 VDS, Drain-to-Source Voltage (V) 3.0 -55 C 0.72 75 100 125 150 Tj, Junction Temperature ( C) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Dec,24,2013 3 www.samhop.com.tw SDU/D02N60 Ver 2.2 20.0 9.0 I D =1A Is, Source-drain current (A) 7.5 125 C RDS(on)( Ω) 6.0 75 C 4.5 3.0 25 C 1.5 0 0 2 4 6 8 125 C 5.0 25 C 75 C 1.0 10 0 0.3 0.6 0.9 1.2 1.5 V GS, Gate-Sorce Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage (V) 600 500 C, Capacitance (pF) 10.0 400 Ciss 300 200 Coss Crss 100 0 10 20 30 40 6 4 2 0 0 50 V DS = 300V I D =1A 8 0 1 2 4 3 5 6 7 VDS, Drain-to Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 8 300 10 it VDS=300V,ID=1A VGS=10V N) (O S RD ID, Drain Current (A) Tf 1 s 10 Tr 0u L im 10 TD(off ) TD(on) s 1 m ms 10 DC Switching Time(ns) 100 0.1 VGS=10V Single Pulse TC=25 C 0.01 1 1 10 100 0.1 Rg, Gate Resistance(Ω) 1 10 100 1000 V DS, Drain-Source Voltage (V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Dec,24,2013 4 www.samhop.com.tw SDU/D02N60 Ver 2.2 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Dec,24,2013 5 www.samhop.com.tw SDU/D02N60 Ver 2.2 TO-252 E E1 b3 L3 D1 D H 3 2 1 L4 b b2 e A SYMBOLS c2 A A1 b b2 b3 c c2 D D1 e E E1 H L L1 L2 L3 L4 DETAIL "A" c L2 L L1 A1 MILLIMETERS MIN MAX 2.380 2.200 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.380 5.210 2.286 BSC 6.400 6.731 4.318 4.900 9.400 10.400 1.400 1.770 2.743 REF 0.508 BSC 1.270 0.890 0.640 1.010 10 ° 0° DETAIL "A" Dec,24,2013 6 www.samhop.com.tw SDU/D02N60 Ver 2.2 PACKAGE OUTLINE DIMENSIONS TO-251S A E b3 c2 D1 E1 D H 1 2 3 b2 L4 L5 L b e b4 SYMBOL c MILLIMETERS MIN MAX E 6.350 6.731 L 3.700 4.400 L4 0.698 REF L5 0.972 1.226 D 5.970 9.670 6.223 11.450 0.630 0.850 0.760 4.950 1.140 0.450 0.550 H b b2 b3 b4 e A c c2 D1 E1 5.460 2.286 BSC 2.390 2.180 0.400 0.610 0.400 0.610 5.100 4.318 Dec,24,2013 7 www.samhop.com.tw SDU/D02N60 Ver 2.2 PACKAGE OUTLINE DIMENSIONS TO-251L A E A1 A2 C B D b3 L1 b2 b4 L e SYMBOL A A1 A2 B L1 L D C C1 E1 E b1 b2 b3 b4 e C1 b1 MIN 6.40 5.30 4.30 1.35 7.40 5.40 0.55 0.49 1.72 2.20 0.60 0.70 E1 MILLIMETERS NOM 6.50 5.40 4.40 1.50 1.55 REF 7.70 5.55 0.60 0.54 1.77 2.30 MAX 6.60 5.50 4.50 1.65 8.00 5.70 0.65 0.59 1.82 2.40 0.75 0.85 0.80 0.90 2.30 Dec,24,2013 8 www.samhop.com.tw SDU/D02N60 Ver 2.2 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Dec,24,2013 9 www.samhop.com.tw SDU/D02N60 Ver 2.2 TOP MARKING DEFINITION TO-252 SamHop Logo SDU02N60 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Dec,24,2013 10 www.samhop.com.tw SDU/D02N60 Ver 2.2 TOP MARKING DEFINITION TO-251S SDD02N60 XXXXXX SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) TO-251L SamHop Logo SDD02N60 XXXXXX Product No. Production Year (2009 = 9, 2010 = A.....) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B.....) Wafer Lot No. SMC internal code No. (A,B,C...Z) Dec,24,2013 11 www.samhop.com.tw