SDU/D02N60

Green
Product
SDU/D02N60
S a mHop Microelectronics C orp.
Ver 2.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Max
600V
2A
4.7 @ VGS=10V
Rugged and reliable.
Suface Mount Package.
D
G
D
G
S
SDU SERIES
TO-252(D-PAK)
G
D
S
SDD SERIES
TO-251S(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
S
SDD SERIES
TO-251L(I-PAK)
RoHS Status
Halogen Free
SDU02N60HZ
TO-252
Marking Code
SDU02N60
SDD02N60HS
TO-251S
SDD02N60
Tube
Halogen Free
SDD02N60HL
TO-251L
SDD02N60
Tube
Halogen Free
Delivery Mode
Reel
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
a d
TC=25°C
TC=100°C
b
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TC=25°C
TC=100°C
Limit
600
±30
Units
V
V
2
A
1.3
A
5.8
A
42
W
17
W
-55 to 150
°C
3
°C/W
50
°C/W
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Dec,24,2013
1
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SDU/D02N60
Ver 2.2
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
Min
VGS=0V , ID=250uA
600
VGS= ±30V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=1A
VDS=20V , ID=1A
2
Max
Units
1
±100
uA
V
VDS=480V , VGS=0V
VDS=25V,VGS=0V
f=1.0MHz
3
3.6
4
4.7
nA
1.6
V
ohm
S
300
37
pF
pF
9
pF
17.5
ns
17
ns
c
VDD=300V
ID=1A
VGS=10V
RGEN=6 ohm
tf
Qg
Total Gate Charge
VDS=300V,ID=1A,VGS=10V
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=300V,ID=1A,
VGS=10V
Fall Time
Typ
c
Input Capacitance
Output Capacitance
tD(ON)
Conditions
21
ns
8
ns
7
nC
1.5
nC
2.9
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.79
1.4
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 300us, Duty Cycle <
_ 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
Dec,24,2013
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SDU/D02N60
Ver 2.2
1.80
4
ID, Drain Current(A)
ID, Drain Current(A)
5
VGS = 10V
VGS = 6V
3
2
VGS = 5V
1
0
0
15
10
5
25
20
1.44
1.08
Tj=125 C
25 C
0.36
0
30
6.0
7.2
Figure 2. Transfer Characteristics
3.0
7.5
2.6
RDS(ON), On-Resistance
Normalized
9.0
6.0
R DS(on)( Ω)
4.8
3.6
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
4.5
V G S =10V
V G S =10V
I D = 1A
2.2
1.8
1.4
1.0
1.5
0
0
0.1
0.7
1.4
2.1
2.8
0
3.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
100
125
150
Tj, Junction Temperature ( C)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
50
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
25
Tj( C)
ID, Drain Current (A)
Vth, Normalized
Gate-Source Threshold Voltage
2.4
1.2
0
VDS, Drain-to-Source Voltage (V)
3.0
-55 C
0.72
75 100 125 150
Tj, Junction Temperature ( C)
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
Dec,24,2013
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SDU/D02N60
Ver 2.2
20.0
9.0
I D =1A
Is, Source-drain current (A)
7.5
125 C
RDS(on)( Ω)
6.0
75 C
4.5
3.0
25 C
1.5
0
0
2
4
6
8
125 C
5.0
25 C
75 C
1.0
10
0
0.3
0.6
0.9
1.2
1.5
V GS, Gate-Sorce Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VGS, Gate to Source Voltage (V)
600
500
C, Capacitance (pF)
10.0
400
Ciss
300
200
Coss
Crss
100
0
10
20
30
40
6
4
2
0
0
50
V DS = 300V
I D =1A
8
0
1
2
4
3
5
6
7
VDS, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
8
300
10
it
VDS=300V,ID=1A
VGS=10V
N)
(O
S
RD
ID, Drain Current (A)
Tf
1
s
10
Tr
0u
L im
10
TD(off )
TD(on)
s
1 m ms
10 DC
Switching Time(ns)
100
0.1
VGS=10V
Single Pulse
TC=25 C
0.01
1
1
10
100
0.1
Rg, Gate Resistance(Ω)
1
10
100
1000
V DS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Figure 11. switching characteristics
Dec,24,2013
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SDU/D02N60
Ver 2.2
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Dec,24,2013
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SDU/D02N60
Ver 2.2
TO-252
E
E1
b3
L3
D1
D
H
3
2
1
L4
b
b2
e
A
SYMBOLS
c2
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
DETAIL "A"
c
L2
L
L1
A1
MILLIMETERS
MIN
MAX
2.380
2.200
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.380
5.210
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
1.270
0.890
0.640
1.010
10 °
0°
DETAIL "A"
Dec,24,2013
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SDU/D02N60
Ver 2.2
PACKAGE OUTLINE DIMENSIONS
TO-251S
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L4
L5
L
b
e
b4
SYMBOL
c
MILLIMETERS
MIN
MAX
E
6.350
6.731
L
3.700
4.400
L4
0.698 REF
L5
0.972
1.226
D
5.970
9.670
6.223
11.450
0.630
0.850
0.760
4.950
1.140
0.450
0.550
H
b
b2
b3
b4
e
A
c
c2
D1
E1
5.460
2.286 BSC
2.390
2.180
0.400
0.610
0.400
0.610
5.100
4.318
Dec,24,2013
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SDU/D02N60
Ver 2.2
PACKAGE OUTLINE DIMENSIONS
TO-251L
A
E
A1
A2
C
B
D
b3
L1
b2
b4
L
e
SYMBOL
A
A1
A2
B
L1
L
D
C
C1
E1
E
b1
b2
b3
b4
e
C1
b1
MIN
6.40
5.30
4.30
1.35
7.40
5.40
0.55
0.49
1.72
2.20
0.60
0.70
E1
MILLIMETERS
NOM
6.50
5.40
4.40
1.50
1.55 REF
7.70
5.55
0.60
0.54
1.77
2.30
MAX
6.60
5.50
4.50
1.65
8.00
5.70
0.65
0.59
1.82
2.40
0.75
0.85
0.80
0.90
2.30
Dec,24,2013
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SDU/D02N60
Ver 2.2
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Dec,24,2013
9
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SDU/D02N60
Ver 2.2
TOP MARKING DEFINITION
TO-252
SamHop Logo
SDU02N60
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Dec,24,2013
10
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SDU/D02N60
Ver 2.2
TOP MARKING DEFINITION
TO-251S
SDD02N60
XXXXXX
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
TO-251L
SamHop Logo
SDD02N60
XXXXXX
Product No.
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B.....)
Wafer Lot No.
SMC internal code No. (A,B,C...Z)
Dec,24,2013
11
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