SDP08N60 SDF08N60

SDP08N60
SDF08N60
S a mHop Microelectronics C orp.
Ver 2.1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Typ
600V
8A
0.89 @ VGS=10V
Rugged and reliable.
TO-220 and TO-220F Package.
D
SDF SERIES
TO-220F
SDP SERIES
TO-220
ORDERING INFORMATION
Ordering Code
Package
SDP08N60HZ
G
G D S
G D S
Marking Code
SDP08N60
TO-220
S
RoHS Status
Halogen Free
Delivery Mode
Tube
SDP08N60PZ
TO-220
08N60
Tube
Pb Free
SDF08N60HZ
TO-220F
SDF08N60
Tube
Halogen Free
SDF08N60PZ
TO-220F
08N60
Tube
Pb Free
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
SDP08N60 SDF08N60
600
±30
±30
TC=25°C
TC=100°C
a
a
E AS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
8
5.7
5.7
A
23
23
A
mJ
400
TC=100°C
150
50
W
75
25
W
-55 to 175
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1
62.5
Details are subject to change without notice.
A
8
c
TC=25°C
Units
V
V
3
62.5
°C
°C/W
°C/W
Dec,24,2013
1
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SDP08N60
SDF08N60
Ver 2.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
VDS=480V , VGS=0V
600
Typ
1
±100
VGS= ±30V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=4A
Max
3
Units
V
uA
nA
VDS=20V , ID=4A
5.3
V
ohm
S
VDS=25V,VGS=0V
f=1.0MHz
1080
106
10
pF
pF
pF
39
ns
18.4
ns
40
ns
15
ns
13.4
nC
2.9
nC
5.5
nC
2
0.89
4
1.11
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
b
VDD=300V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=3A
0.79
1.4
V
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Dec,24,2013
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SDP08N60
SDF08N60
Ver 2.1
15
6.0
ID, Drain Current(A)
I D, Drain Current(A)
VG S = 10V
12
VG S = 7V
9
6
VG S = 6V
3
4.8
3.6
2.4
T j=125 C
-55 C
1.2
VG S = 5V
0
0
5
10
15
20
25
25 C
0
30
0
VDS, Drain-to-Source Voltage(V)
3.0
3.0
2.5
2.6
R DS(on), On-Resistance
Normalized
R DS(on)( Ω)
2.8
4.2
5.6
7.0
8.4
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
2.0
1.5
V G S =10V
1.0
0.5
V G S =10V
I D =4A
2.2
1.8
1.4
1.0
0
0
0.1
3
6
12
9
0
15
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
50
75
100
125
150
T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.4
25
Tj, Junction Temperature(° C )
I D, Drain Current(A)
Vth, Normalized
Gate-Source Threshold Voltage
1.4
V GS, Gate-to-Source Voltage(V)
75 100 125 150
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
3
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SDP08N60
SDF08N60
Ver 2.1
20.0
3.0
Is, Source-drain current(A)
I D = 4A
R DS(on)(Ω)
2.5
2.0
125 C
1.5
75 C
1.0
25 C
0.5
0
2
0
4
6
5.0
125 C
75 C
25 C
1.0
10
8
10.0
0
V GS, Gate-to-Source Voltage(V)
0.75
1.25
1.00
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
2400
2000
C, Capacitance(pF)
0.50
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1600
C is s
1200
800
C os s
400
C rs s
0
10
20
30
40
50
V DS =300V
I D = 1A
8
6
4
2
0
0
0
VDS, Drain-to-Source Voltage(V)
8
6
12
10
14
16
100
R
(
DS
)
ON
L im
10
it
10
1m
0u
I D , Drain C urrent (A)
10
s
s
m
DC s
1
0.01
0.1
4
Figure 10. Gate Charge
100
0.1
2
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
I D , Drain C urrent (A)
0.25
VGS=10V
Single Pulse
TC=25 C
1
10
100
10
R
L im
0.1
it
10
10
DC
1
0.01
0.1
1000
(
DS
)
ON
1m
ms
10
0u
us
s
s
VGS=10V
Single Pulse
TC=25 C
1
10
100
1000
V DS , Drain-S ource V oltage (V )
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for SDF08N60
Figure 11a. Maximum Safe Operating
Area for SDP08N60
Dec,24,2013
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SDP08N60
SDF08N60
Ver 2.1
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
0.0 1
tp
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 12a.
F igure 12b.
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
0.1
1
10
Square Wave Pulse Duration (msec)
Figure 13a. Normalized Thermal Transient Impedance Curve for SDP08N60
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.05
P DM
0.1
0.02
t1
t2
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
S quare Wave P uls e Duration (ms ec)
Figure 13b. Normalized Thermal Transient Impedance Curve for SDF08N60
Dec,24,2013
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SDP08N60
SDF08N60
Ver 2.1
Dec,24,2013
6
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SDP08N60
SDF08N60
Ver 2.1
TO-220F
A1
E
Q1
žP
A3
Q
D1
D
L2
L1
b1x3
L
bx3
c
e
SYMBOL
A
A1
A2
A3
b
b1
c
D
D1
E
E1
e
L
L1
L2
Q
Q1
žP
E1
A
A2
MILLIMETERS
MAX
MIN
4.90
4.50
2.35
2.75
2.15
2.92
0.50
0.65
0.90
0.70
1.55
1.15
0.70
0.45
16.30
15.30
6.67
6.77
9.90
10.32
9.20
9.40
2.54 REF.
9.45
10.05
2.79
3.60
15.60
16.00
3.40
3.20
7.10
6.90
3.55
2.90
Dec,24,2013
7
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SDP08N60
SDF08N60
Ver 2.1
TO-220 Tube
Dec,24,2013
8
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SDP08N60
SDF08N60
Ver 2.1
F Tube
Dec,24,2013
9
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SDP08N60
SDF08N60
Ver 2.1
TOP MARKING DEFINITION
TO-220 (Halogen Free)
SamHop Logo
SDP08N60
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot Number
TO-220 (Pb Free)
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
08N60
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
10
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SDP08N60
SDF08N60
Ver 2.1
TOP MARKING DEFINITION
TO-220F (Halogen Free)
SamHop Logo
SDF08N60
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
TO-220F (Pb Free)
Wafer Lot Number
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
08N60
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
11
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