SDP08N60 SDF08N60 S a mHop Microelectronics C orp. Ver 2.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 8A 0.89 @ VGS=10V Rugged and reliable. TO-220 and TO-220F Package. D SDF SERIES TO-220F SDP SERIES TO-220 ORDERING INFORMATION Ordering Code Package SDP08N60HZ G G D S G D S Marking Code SDP08N60 TO-220 S RoHS Status Halogen Free Delivery Mode Tube SDP08N60PZ TO-220 08N60 Tube Pb Free SDF08N60HZ TO-220F SDF08N60 Tube Halogen Free SDF08N60PZ TO-220F 08N60 Tube Pb Free ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed SDP08N60 SDF08N60 600 ±30 ±30 TC=25°C TC=100°C a a E AS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range 8 5.7 5.7 A 23 23 A mJ 400 TC=100°C 150 50 W 75 25 W -55 to 175 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1 62.5 Details are subject to change without notice. A 8 c TC=25°C Units V V 3 62.5 °C °C/W °C/W Dec,24,2013 1 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance Conditions Min VGS=0V , ID=250uA VDS=480V , VGS=0V 600 Typ 1 ±100 VGS= ±30V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=4A Max 3 Units V uA nA VDS=20V , ID=4A 5.3 V ohm S VDS=25V,VGS=0V f=1.0MHz 1080 106 10 pF pF pF 39 ns 18.4 ns 40 ns 15 ns 13.4 nC 2.9 nC 5.5 nC 2 0.89 4 1.11 b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge b VDD=300V ID=1A VGS=10V RGEN= 6 ohm VDS=300V,ID=1A,VGS=10V VDS=300V,ID=1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=3A 0.79 1.4 V Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12) Dec,24,2013 2 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 15 6.0 ID, Drain Current(A) I D, Drain Current(A) VG S = 10V 12 VG S = 7V 9 6 VG S = 6V 3 4.8 3.6 2.4 T j=125 C -55 C 1.2 VG S = 5V 0 0 5 10 15 20 25 25 C 0 30 0 VDS, Drain-to-Source Voltage(V) 3.0 3.0 2.5 2.6 R DS(on), On-Resistance Normalized R DS(on)( Ω) 2.8 4.2 5.6 7.0 8.4 Figure 2. Transfer Characteristics Figure 1. Output Characteristics 2.0 1.5 V G S =10V 1.0 0.5 V G S =10V I D =4A 2.2 1.8 1.4 1.0 0 0 0.1 3 6 12 9 0 15 BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j( C ) Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.4 25 Tj, Junction Temperature(° C ) I D, Drain Current(A) Vth, Normalized Gate-Source Threshold Voltage 1.4 V GS, Gate-to-Source Voltage(V) 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Dec,24,2013 3 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 20.0 3.0 Is, Source-drain current(A) I D = 4A R DS(on)(Ω) 2.5 2.0 125 C 1.5 75 C 1.0 25 C 0.5 0 2 0 4 6 5.0 125 C 75 C 25 C 1.0 10 8 10.0 0 V GS, Gate-to-Source Voltage(V) 0.75 1.25 1.00 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 2400 2000 C, Capacitance(pF) 0.50 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1600 C is s 1200 800 C os s 400 C rs s 0 10 20 30 40 50 V DS =300V I D = 1A 8 6 4 2 0 0 0 VDS, Drain-to-Source Voltage(V) 8 6 12 10 14 16 100 R ( DS ) ON L im 10 it 10 1m 0u I D , Drain C urrent (A) 10 s s m DC s 1 0.01 0.1 4 Figure 10. Gate Charge 100 0.1 2 Qg, Total Gate Charge(nC) Figure 9. Capacitance I D , Drain C urrent (A) 0.25 VGS=10V Single Pulse TC=25 C 1 10 100 10 R L im 0.1 it 10 10 DC 1 0.01 0.1 1000 ( DS ) ON 1m ms 10 0u us s s VGS=10V Single Pulse TC=25 C 1 10 100 1000 V DS , Drain-S ource V oltage (V ) V DS , Drain-S ource V oltage (V ) Figure 11b. Maximum Safe Operating Area for SDF08N60 Figure 11a. Maximum Safe Operating Area for SDP08N60 Dec,24,2013 4 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 12a. F igure 12b. r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration (msec) Figure 13a. Normalized Thermal Transient Impedance Curve for SDP08N60 r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.05 P DM 0.1 0.02 t1 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 S quare Wave P uls e Duration (ms ec) Figure 13b. Normalized Thermal Transient Impedance Curve for SDF08N60 Dec,24,2013 5 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 Dec,24,2013 6 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 TO-220F A1 E Q1 P A3 Q D1 D L2 L1 b1x3 L bx3 c e SYMBOL A A1 A2 A3 b b1 c D D1 E E1 e L L1 L2 Q Q1 P E1 A A2 MILLIMETERS MAX MIN 4.90 4.50 2.35 2.75 2.15 2.92 0.50 0.65 0.90 0.70 1.55 1.15 0.70 0.45 16.30 15.30 6.67 6.77 9.90 10.32 9.20 9.40 2.54 REF. 9.45 10.05 2.79 3.60 15.60 16.00 3.40 3.20 7.10 6.90 3.55 2.90 Dec,24,2013 7 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 TO-220 Tube Dec,24,2013 8 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 F Tube Dec,24,2013 9 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 TOP MARKING DEFINITION TO-220 (Halogen Free) SamHop Logo SDP08N60 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot Number TO-220 (Pb Free) Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 08N60 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 10 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 TOP MARKING DEFINITION TO-220F (Halogen Free) SamHop Logo SDF08N60 XXXXXX Product No. SMC internal code No. (A,B,C...Z) TO-220F (Pb Free) Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 08N60 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 11 www.samhop.com.tw